• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.592-592
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• 2012

태양전지에서 고효율 달성을 위해 태양광을 더 많이 활용하기 위해서는 태양전지 표면에서의 광 반사를 줄여야 하는데 가장 효과적인 방법은 실리콘 기판의 wet etching 공정을 통한 텍스쳐링이다. 태양전지에서 가장 많이 사용되는 파장대역은 가시광선 영역인데 555 nm 파장에서 실리콘 표면의 total reflectance는 30.1%로 매우 높고 diffuse reflectance는 0.1%로서 무시할만큼 적다. 하지만 wet etching을 한 후 total reflectance는 18%까지 감소하였고, diffuse reflectance는 16%까지 증가하였다. 결정면에 따른 식각선택성을 이용하는 이방성 etching으로 V groove 모양의 표면형상을 얻을 수 있었고, 후속 등방성 etching을 하여 U groove 표면형상을 얻을 수 있었다. 또한 wet etching의 문제점중의 하나는 반응중에 생성되는 수소기체가 실리콘 표면에 부착되어 etching이 불균일하게 진행되는 것인데 초음파를 사용하여 이 문제를 해결하였다. 그리고 Etchant의 성분용액중 하나인 IPA의 농도조절을 통해 표면에 형성되는 피라미드의 크기를 조절할 수 있었다. 본 연구에서는 실리콘 표면형상의 각각 서로 다른 크기와 모양에 따라 태양전지를 만들었을 때 빛의 활용 측면에서 어떤 변화가 있고 얼마만큼의 효율변화가 있는지에 대해서도 알아보았다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.4
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• pp.135-139
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• 2014

The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristics was applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etching method was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may be due to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a better efficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-ray diffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied by scanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were well independently separated in space and clearly showed their shape, was $410^{\circ}C$ and 25 min. The etch pits density obtained by molten KOH/NaOH wet chemical etching under optimum etching condition was around $2.45{\times}10^6cm^{-2}$, which is commercially an available materials.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2004.05a
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• pp.245-249
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• 2004

Transparent materials such as fused silica are important materials in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. However, these properties make it difficult to micromachine silica in micro-sized quantities. In this study, we fabricated a micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone, toluene, and pyrene-toluene solution were used as etchant. In the side of etch rate, toluene and pyrene-toluene solution were better than pyrene-acetone solution.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1408-1411
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• 2009

This paper describes organic acid-based wet chemical etching behaviors of amorphous Ga-doped zinc oxide (GZO) thin film sputter-deposited at low temperature (room temperature). Wet etch parameters such as etching time, temperature, and etchant concentration are investigated for formic and citric acid etchants, and their effects on the etch rate, etch residue and the feature of edge line are compared.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.1
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• pp.1-6
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• 2011

We have developed the process of forming one body S-type cantilever probe in the recessed trench for fine-pitched MEMS probe card. The probe (cantilever beam and pyramid tip) was formed using Deep RIE etching and wet etching. The pyramid tip was formed by the wet etching using KOH and TMAH. The process of forming the curved probe was also developed by the wet etching. Therefore, the fabricated probe is applicable for the probe card for DRAM, Flash memory and RF devices tests and probe tip for IC test socket.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.594-598
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• 2008

The metal catalyst particles which there is as impurities on a tip part of carbon nanotube (CNT) are not good to apply it to a nano-electronic device. It was very important the opening of CNT-tip to fix a target bio material and a material to accept in CNT in a biosensor, so we performed $HNO_3$ wet etching to remove the metal catalyst particle which there was on a tip part of CNT grown up in the study and observed the opened CNT-tip with etching time. We synthesized the CNTs using a HF-PECVD method and choses the CNT length of 700 nm for the application of nano-electronic device such as a biosensor etc.. We observed the opened CNT-tip with wet etching times of $HNO_3$ (10, 30, 60 min). From the results, we observed that the CNT-tip was opened with the increase of wet etching time lively. In case of CNTs etched during 60 min, we confirmed that there was not the ratio of Ni included in CNTsI as catalyst. Conclusively, in the case of CNT etched for 60 minutes, it is completely good for application of a biosensor and, in addition, the metal-free CNTs will contribute to the application of other nanoelectronic devices.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2221-2225
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• 2007

Hollow-type microneedle array can be used for painless, continuous and stable drug delivery through a human skin. The needles must be sharp and have sufficient length in order to penetrate the epidermis. An array of hollow-type silicon microneedles was fabricated by using deep reactive ion etching and HNA wet etching with two oxide masks. Isotropic etching was used to create tapered tips of the needles, and anisotropic etching of Bosch process was used to make the extended length and holes of microneedles. The microneedles were formed by three steps of isotropic, anisotropic, and isotropic etching in order. The holes were made by one anisotropic etching step. The fabricated microneedles have $170{\mu}m$ width, $40{\mu}m$ hole diameter and $230{\mu}m$ length.

• Transactions of Materials Processing
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• v.13 no.3
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• pp.268-272
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• 2004

Transparent materials such as fused silica are widely utilized in optical and optoelectronics field because of its outstanding properties, such as transparency in a wide wavelength range, strong damage resistance for laser irradiation, and high thermal and chemical stability. In this study, we made a few micro patterns on the surface of fused silica plate using laser induced wet etching. KrF excimer laser was used as a light source. There were no burrs and micro cracks on the etched surface of fused silica and the flatness of the etched surface was fairly good. We investigated the influence of etchant upon the etch rate and quality in laser induced wet etching. Pyrene-acetone solution and toluene were used as etchant. In the side of etch rate, toluene solution was better than pyrene-acetone solution. But we made in wider range of energy density using pyrene-acetone solution. But pyrene-acetone solution gave us wider window of energy density for successful micro patterning.

• Korean Journal of Metals and Materials
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• v.46 no.4
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• pp.217-222
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• 2008

Characteristics of etching and induced surface morphology variation by wet-etching of n-face n-type GaN were investigated using KOH solutions. It was observed that hexagonal pyramids were formed on the etched surface regardless of etching conditions. However, the size of the hexagonal pyramids was changed as the etching time and temperature increased, respectively. Initially, as the etching time and concentration of KOH solution increased, the hexagonal pyramid was observed to be dissociated into smaller pyramids. However, as the etching time increased further, the size of the hexagonal pyramids increased again, indicating that the etching of N-face n-type GaN by KOH solutions proceeded through the evolution of hexagonal pyramids, such as formation, dissociation and enlargement of pyramids. Furthermore, it was also observed that there is a correlation between the photoluminescence intensity of the etched surface and the value of root-mean-square roughness. The intensity of PL increased as the roughness value increased due to the enhancement of the extraction efficiency of the generated photons.