• Title/Summary/Keyword: Wet etching

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Pattern Fabrication on Si (100) Surface by Using Both Nanoscratch and KOH Etching Technique (나노스크래치와 KOH 에칭 기술을 병용한 Si (100) 패턴제작)

  • 윤성원;이정우;강충길
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2003.05a
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    • pp.448-451
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    • 2003

  • This study describes a new maskless nano-fabrication technique of Si (100) using the combination of nanometer-scale mechanical forming by nano-indenter XP and KOH wet etching. First the surface of a Si (100) specimen was machined by using the nano-machining system, which utilizes the mechanism of the nano-indenter XP. Next, the specimen was etched by KOH solution. After the etching process, the convex structure or deeper hole is made because of masking or promotion effect of the affected layer generated by nano-machining. On the basis of this interesting fact, some sample structures were fabricated.

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High-Yield Etching-Free Transfer of Graphene: A Fracture Mechanics Approach

  • Yoon, Taeshik;Jo, Woo Sung;Kim, Taek-Soo
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.2
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    • pp.59-64
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    • 2014

  • Transfer is the critical issue of producing high-quality and scalable graphene electronic devices. However, conventional transfer processes require the removal of an underlying metal layer by wet etching process, which induces significant economic and environmental problems. We propose the etching-free mechanical releasing of graphene using polymer adhesives. A fracture mechanics approach was introduced to understand the releasing mechanism and ensure highyield process. It is shown that the thickness of adhesive and target substrate affect the transferability of graphene. Based on experimental and fracture mechanics simulation results, we further observed that compliant adhesives can reduce the adhesive stress during the transfer, which also enhances the success probability of graphene transfer.

  • https://doi.org/10.6117/kmeps.2014.21.2.059 인용 PDF KSCI