Pattern Fabrication on Si (100) Surface by Using Both Nanoscratch and KOH Etching Technique

나노스크래치와 KOH 에칭 기술을 병용한 Si (100) 패턴제작

This study describes a new maskless nano-fabrication technique of Si (100) using the combination of nanometer-scale mechanical forming by nano-indenter XP and KOH wet etching. First the surface of a Si (100) specimen was machined by using the nano-machining system, which utilizes the mechanism of the nano-indenter XP. Next, the specimen was etched by KOH solution. After the etching process, the convex structure or deeper hole is made because of masking or promotion effect of the affected layer generated by nano-machining. On the basis of this interesting fact, some sample structures were fabricated.