• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 2005년도 추계학술대회 논문집
• /
• pp.326-329
• /
• 2005

As a flexible method to fabricate sub-micrometer patterns, Focused Ion Beam (FIB) instrument and Self-Assembled Monolayer (SAM) resist are introduced in this work. FIB instrument is known to be a very precise processing machine that is able to fabricate micro-scale structures or patterns, and SAM is known as a good etch resistance resist material. If SAM is applied as a resist in FIB processing fur fabricating nano-scale patterns, there will be much benefit. For instance, low energy ion beam is only needed for machining SAM material selectively, since ultra thin SAM is very sensitive to $Ga^+$ ion beam irradiation. Also, minimized beam spot radius (sub-tens nanometer) can be applied to FIB processing. With the ultimate goal of optimizing nano-scale pattern fabrication process, interaction between SAM coated specimen and $Ga^+$ ion dose during FIB processing was observed. From the experimental results, adequate ion dose for machining SAM material was identified.

• 한국재료학회지
• /
• 제31권10호
• /
• pp.569-575
• /
• 2021

The reactivity evaluation of copper is performed using ethylenediamine, aminoethanol, and piperidine to apply organic chelators to copper etching. It is revealed that piperidine, which is a ring-type chelator, has the lowest reactivity on copper and copper oxide and ethylenediamine, which is a chain-type chelator, has the highest reactivity via inductively coupled plasma-mass spectroscopy (ICP-MS). Furthermore, it is confirmed that the stable complex of copper-ethylenediamine can be formed during the reaction between copper and ethylenediamine using nuclear magnetic resonance (NMR) and radio-thin layer chromatography. As a final evaluation, the copper reactivity is evaluated by wet etching using each solution. Scanning electron micrographs reveal that the degree of copper reaction in ethylenediamine is stronger than that in any other chelator. This result is in good agreement with the evaluation results obtained by ICP-MS and NMR. It is concluded that ethylenediamine is a prospective etch gas for the dry etching of the copper.

• 구강회복응용과학지
• /
• 제29권1호
• /
• pp.37-44
• /
• 2013

근관치료 후 적절한 치관부 밀폐를 위해 레진을 이용한 코어수복방법이 현재 많이 사용되고 있다. 하지만, 근관치료 과정에서 사용되는 NaOCl이나 EDTA같은 근관세척제는 레진 접착에 영향을 주는 것으로 알려져 있으며, 이에 관한 많은 연구들이 이루어져 왔다. 본 연구에서는 ethanol wet bonding을 치수강 상아질에 적용 시에 NaOCl과 EDTA가 결합강도에 미치는 영향에 대해 조사하였다. 30개의 인간 대구치로부터 총 60개의 시편을 얻었고, 이를 무작위로 4개의 군으로 분류했다. G1: 증류수로 세척후 증류수로 마무리 세척, G2: NaOCl로 세척 후 NaOCl로 마무리세척, G3: NaOCl로 세척 후 EDTA로 마무리세척, G4: NaOCl로 세척 후 EDTA로 마무리세척하고 접착과정에서 산부식과정 생략. 접착과정은 인산부식 후 에탄올의 농도를 50%, 70%, 80%, 95% 그리고 100%로 순차적으로 증가시켜가면서 상아질을 탈수시키고 에탄올에 적셔지도록 하였다. 프라이머는 HEMA가 포함되지 않은 상용화된 접착제인 ALL-BOND 3 RESIN과 에탄올을 반반씩 섞어 만들었다. 프라이머 적용 후 ALL-BOND 3 RESIN을 접착제로 사용하였다. 저점도 복합레진을 이용하여 6mm 두께로 적층충전한 후 빔 형태로 잘라 미세인장결합강도 실험을 하였다. NaOCl 처리한 그룹은 미세인장결합강도에 통계적으로 유의한 차이를 보여주지는 않았지만 낮은 평균값을 보여주었다(p=0.052). NaOCl 처리 후 1분간 EDTA로 처리한 그룹은 다른 그룹보다 유의하게 높은 결합강도를 보여주었다(p<0.05). EDTA 처리가 결합강도를 향상 시켰지만, 산부식 과정을 생략할 경우 유의하게 낮은 결합 강도를 보여주었으며, 이는 EDTA처리가 산부식 과정을 대신할 수는 없다는 것을 보여준다.

• 대한치과보존학회:학술대회논문집
• /
• 대한치과보존학회 2001년도 추계학술대회(제116회) 및 13회 Workshop 제3회 한ㆍ일 치과보존학회 공동학술대회 초록집
• /
• pp.577-577
• /
• 2001

The lastest concepts in bonding are "total etch", in which both enamel and dentin are etched with an acid to remove the smear layers, and "wet dentin" in which the dentin is not blown dry but left moist before application of the bonding primer. Ideally, the application of a bonding agent to tooth structure should be insensitive to minor contamination from oral fluids. Clinically contaminations such as saliva, gingival fluid, blood and handpiece lubricant are often encountered by dentists during preparation of a restoration. The aim of this study was to evaluate the effect of contamination by hem-ostatic agents on shear bond strength of compomer restorations. One hundred and ten extracted human maxillary and mandibular molar teeth were collected. The teeth were cleaned from soft tissue remnant and debris and stored in physiologic solution until they were used. Small flat area on dentin of the buccal surface were wet ground serially with 400, 800 and 1200 abrasive paper on automatic polishing machine. The teeth were randomly divided into 11 groups. Each group was conditioned as follows: Group 1 : Dentin surface was not etched and not contaminated by hemostatic agents. Group2 : Dentin surface was not etched but was contaminated by Astringedent (Ultradent product Inc., Utah, U.S.A.). Group3 : Dentin surface was not etched but was contaminated by Bosmin (Jeil Phann, Korea.). Group4 : Dentin surface was not etched but was contaminated by Epri-dent (Epr Industries, NJ, U.S.A.). Group5: Dentin surface was etched and not contaminated by hemostatic agents. Group 6 : Dentin surface was etched and contaminated by Astringedent. Group7 : Dentin surface was etched and contaminated by Bosmin. Group8 : Dentin surface was etched and contaminated by Epri-dent. Group9 : Dentin surface was contaminated by Astringedent. The contaminated surface was rinsed by water and dried by compressed air. Group10 : Dentin surface was contaminated by Bosmin. The contaminated surface was rinsed by water aud dried by compresfed air. Group 11 : Dentin surface was contaminated by Epri-dent. The contaminated surface was rinsed by water and dried by compresfed air. After surface conditioning, F2000 was applicated on the conditoned dentin surface. The teeth were thermocycled in distilled water at $5^{\circ}C\;and\;55^{\circ}C$ for 1000 cycles. The samples were placed on the binder with the bonded compomer-dentin interface parallel to the lmife-edge shearing rod of the Universal testing machine(Zwick 020, Germany) running at a cross head speed of 1.0mmimin. There were no significant differences in shear bond strength between groups 1 and group 3 and 4, but group 2 showed significant decrease in shear bond strength compared with group 1. There were no significant differences in shear bond strength between group 5 and group 7 and 8, but group 6 showed significant decrease in shear bond strength compared with group 5. There were no significant differences in shear bond strength between group 5 and group 9, 10 and 11.

• 한국결정성장학회지
• /
• 제27권3호
• /
• pp.143-147
• /
• 2017

PVT법으로 성장된 AlN 단결정의 표면 특성 및 결정성을 신뢰성 있게 평가하기 위해 $KOH/H_2O_2$ 혼합액을 이용한 화학적 습식 에칭을 통하여 AlN 단결정의 결함을 분석하였고, 고온 어닐링 공정을 통해 단결정의 결정성 변화를 관찰하였다. $300^{\circ}C$ 이상의 고온에서 강 염기성의 etchant를 사용하는 기존 에칭 방법에서는 재료의 결정성에 따라 쉽게 over etching이 일어난다. Over etching이 일어날 경우 면적당 정확한 에치 핏의 개수를 알 수 없기 때문에 전위 밀도의 신뢰성이 매우 떨어진다. 따라서 이러한 단점을 보완하기 위해 KOH 수용액에 $H_2O_2$를 산화제로 사용하여 $100^{\circ}C$ 이하의 저온에서 에칭을 성공하였으며, 주사전자현미경(SEM, scanning electron microscope)을 통해 에치 핏을 관찰하여 최적 에칭 조건 및 전위 밀도를 확인할 수 있었다. 또한, 성장된 AlN 단결정에 고온 어닐링 공정을 적용한 후, DC-XRD(double crystal X-ray diffraction)를 이용하여 결정성을 평가한 결과, 고온 어닐링 공정 후 FWHM(full with at half maximum) 값이 급격히 감소되는 것을 확인하였으며 이에 대한 메커니즘을 분석하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.220-220
• /
• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.319-320
• /
• 2012

Large aperture optical modulator called optical shutter is a key component to realize time-of-flight (TOF) based three dimensional (3D) imaging systems [1-2]. The transmission type electro-absorption modulator (EAM) is a prime candidate for 3D imaging systems due to its advantages such as small size, high modulation performance [3], and ease of forming two dimensional (2D) array over large area [4]. In order to use the EAM for 3D imaging systems, it is crucial to remove GaAs substrate over large area so as to obtain high uniformity modulation performance at 850 nm. In this study, we propose and experimentally demonstrate techniques for backside etching of GaAs substrate over a large area having high uniformity. Various methods such as lapping and polishing, dry etching for anisotropic etching, and wet etching ([20%] C6H8O7 : H2O2 = 5:1) for high selectivity backside etching [5] are employed. A high transmittance of 80% over the large aperture area ($5{\times}5mm^2$) can be obtained with good uniformity through optimized backside etching method. These results reveal that the proposed methods for backside etching can etch the substrate over a large area with high uniformity, and the EAM fabricated by using backside etching method is an excellent candidate as optical shutter for 3D imaging systems.

• ETRI Journal
• /
• 제24권4호
• /
• pp.290-298
• /
• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.48-48
• /
• 2011

We have developed a chemically-driven top-down approach using vapor phase HCl to form various GaN nanostructures and successfully demonstrated dislocation-free and strain-relaxed GaN nanostructures without etching damage formed by a selective dissociation method. Our approach overcomes many limitations encountered in previous approaches. There is no need to make a pattern, complicated process, and expensive equipment, but it produces a high-quality nanostructure over a large area at low cost. As far as we know, this is the first time that various types of high-quality GaN nanostructures, such as dot, cone, and rod, could be formed by a chemical method without the use of a mask or pattern, especially on the Ga-polar GaN. It is well known that the Ga-polar GaN is difficult to etch by the common chemical wet etching method because of the chemical stability of GaN. Our chemically driven GaN nanostructures show excellent structure and optical properties. The formed nanostructure had various facets depending on the etching conditions and showed a high crystal quality due to the removal of defects, such as dislocations. These structure properties derived excellent optical performance of the GaN nanostructure. The GaN nanostructure had increased internal and external quantum efficiency due to increased light extraction, reduced strain, and improved crystal quality. The chemically driven GaN nanostructure shows promise in applications such as efficient light-emitting diodes, field emitters, and sensors.

• Restorative Dentistry and Endodontics
• /
• 제28권3호
• /
• pp.203-208
• /
• 2003

The purpose of this study was to evaluate the effect of salivary contamination of teeth on bonding efficacy of self-priming and self-etching DBSs. The materials used were Single Bond(SB, self-priming system, 3M), Unifil Bond(UB, self-etching system, GC), and Scotchbond Multi-Purpose Plus(SM, 3M) as control. Forty five human molars randomly allocated to three groups as dentin bonding systems tested and embedded in epoxy resin. Then the specimens were wet-ground to expose flat buccal enamel surface or flat occlusal dentin surface and cut bucco-lingually to form two halves with slow speed diamond saw. One of them was used under non-contamination, other under contamination with saliva. The bonding procedure was according to the manufacturer's directions and resin composite(Z-100, 3M Dental Products, St. Paul, MN) was built-up on the bonded surface 5mm high. The specimens were ground carefully at the enamel-composite interface with fine finishing round diamond bur to create an hour-glass shape yielding bonded surface areas of $1.5{\pm}0.1\textrm{mm}^2$. The specimens were bonded to the modified microtensile testing apparatus with cyanoacrylate, attached to the universal testing machine and stressed in tension at a CHS of 1mm/min. The tensile force at failure was recorded and converted to a tensile stress(MPa). Mean values and standard deviations of the bond strength are listed in table. One-way ANOVA was used to determine significant difference at the 95% level. The bond strength of SBMP and SB were not affected by salivary contamination, but that of UB was significantly affected by salivary contamination. These results indicate that DBSs with total etch technique seems less likely affected by salivary contamination in bonding procedure.