• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.37 no.1 s.109
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• pp.17-24
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• 2005

The increase of using low grade ace, the unsorted mixed grade, as fibrous raw materials for the packaging paper results in the increment of fine screen reject owing to the strong tendency to reduce the slot width. Since the most of screen reject consists of undispersed fiber flake, the suitable treatment of the flake could increase the yield of ace recycling and decrease the amount of solid waste. In this work, the novel method combined the mild mechanical treatment by using Tumbling pulper with the biological treatment was developed and applied to the wet strength flake and the fine screen tail line reject originated from a packaging paper mill. The results showed the new method could provide much better efficiency for the disintegration of undispersed flake and for the recovery of fiber from the rejects. The application of the laboratory scaled-Pack pulper showed the possible separation technique for mill application by fractioning effectively the fiber from the treated solid waste.

• Journal of the Korean Ceramic Society
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• v.44 no.5 s.300
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• pp.151-154
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• 2007

Yttrium aluminum garnet, $Y_3Al_5O_{12}$ (YAG) is an extensively used solid-state laser host material. YAG nanocrystals were synthesized using low-temperature glycol method, a modified sol-gel method performed at low temperature that consists of a mixture of salts that are mostly nitrates in an aqueous media. Single-phase nanocrystalline YAG was obtained at $850^{\circ}C$, which is a much lower temperature than with other techniques such as a wet-chemical technique. The structural characterization is done by powder X-ray diffraction, scanning electron microscopy and transmission electron microscopy. A crystallite size range of 20-50 nm was observed for the materials prepared at $850-950^{\circ}C$.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.34 no.4
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• pp.309-314
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• 2001

In order to promote the consumption of small red muscle fish, such as saury, sardine, herring, etc., a new conditioning technique to soften backbone and small bones was investigated by using kimchi seasoning ingredients and organic acids. In the conditioning process, various chemical changes were examined during 60 days at 15 days intervals, The decrease of moisture content and the increase of salt concentration in seasoned fish meat were good correlated respectively. In the dry salt conditioning, the moisture content was more rapidly decreased than wet salt conditioning. The pH of fish meat during conditioning were more slowly decreased in dry salting than in wet salting. The VBN contents were suppressed under 30 mg/100 g in dry salt conditioning during 60 days at $5^{\circ}C$. The addition of rice bran in dry salting was effective on retarding lipid oxidation because the TBA value was most effectively retarded.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.196-201
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• 2014

We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, the effectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy have been successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutectic alloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) and atomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function of etching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metal-face of AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend to merge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It was found that hydroxide ion ($OH^-$) and the dangling bond of nitrogen play an important role in the selective etching of the metal-face and N-face.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.2105-2107
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• 2004

In this study, Spiral inductors on the $SiO_2$/Si(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60 ${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays. Also, We recommend that the reasonable Q-factors, spec's turns and thickness of the coil for inductors cab be set to be ideal condition.

• Journal of Applied Biological Chemistry
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• v.44 no.4
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• pp.177-179
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• 2001

Traditional wet chemical methods for testing of soil properties require extensive time and labor, and cause the discharge of pollutants, making them undesirable for routine soil analyses. This research was conducted to improve the accuracy of soil properties in soil fertility assessments. A total of 140 finely ground soil samples were used to obtain accurate calibrations and validation for estimating soil moisture, OM, and T-N. Finely ground soil samples satisfied the improved accuracy for routine NIR measuring of the field soils. The results indicated that NIR spectroscopy could be used as a routine method for quantitatively determining OM, moisture, and T-N of field soil, although this technique requires many combinations of sample pretreatments and data manipulations to obtain optimal predictions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.47-51
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• 2000

A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

• Transactions on Electrical and Electronic Materials
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• v.1 no.1
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• pp.6-11
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• 2000

The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.890-893
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• 2004

In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the frequency were investigated to analyze performance of spiral inductors.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.563-570
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• 1990

A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).