• 한국재료학회지
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• 제14권2호
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• pp.141-145
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• 2004

Silicon nitride thin films were deposited by atomic layer deposition (ALD) technique in a batch-type reactor by alternating exposures of precursors. XJAKO200414714156408$_4$ or$ SiH_2$$Cl_2$ was used as the Si precursor, $NH_3$ was used as the N precursor, and the deposited films were characterized comparatively. The thickness of the film linearly increased with the number of deposition cycles, so that the thickness of the film can be precisely controlled by adjusting the number of cycles. As compared with the deposition using$ SiCl_4$, the deposition using $SiH_2$$Cl_2$ exhibited larger deposition rate at lower precursor exposures, and the deposited films using $SiH_2$$Cl_2$ had lower wet etch rate in a diluted HF solution. Silicon nitride films with the Si:N ratio of approximately 1:1 were obtained using either Si precursors at $500^{\circ}C$, however, the films deposited using $SiH_2$$Cl_2$ exhibited higher concentration of H as compared with those of the $SiC_4$ case. Silicon nitride thin films deposited by ALD showed similar physical properties, such as composition or integrity, with the silicon nitride films deposited by low-pressure chemical vapor deposition, lowering deposition temperature by more than $200^{\circ}C$.

• 자원리싸이클링
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• 제25권5호
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• pp.44-49
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• 2016

배연탈황기술은 화력발전소에 발생하는 $SO_2$ 가스를 제거하기 위한 효과적인 방법이며, 흡수제로 석회석을 사용하고 있다. 본 연구에서는 천연자원인 석회석의 사용량을 저감하고 산업 폐기물의 재활용을 위해, 제철소에서 발생하는 석회석 슬러지를 흡수제로 사용하고자 하였다. 흡수제 원료의 물리 화학적 특성분석을 실시하였으며, 전처리 설비를 구축하여 석회석 슬러지를 사용한 흡수제를 제조한 후 배연탈황 공정에 적용하였다. 제조 흡수제 적용 결과, $SO_2$ 농도 변화상에서의 경향성은 나타나지 않았으며, 흡수탑에서의 운전 제어를 통해 석회석 슬러지를 흡수제로 사용 가능할 것으로 사료되었다.

• 보존과학회지
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• 제32권2호
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• pp.249-259
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• 2016

단청안료에 대한 방염제의 영향을 연구하기 위하여 시판되는 방염제 2종을 도포한 단청 의사시편을 제작하고 방염제 도포에 따른 물리 화학적 변화를 증류수를 도포한 대조군과 비교하여 연구하였다. 그 결과 2종의 방염제는 인산이온을 함유한 인산염계 방염제로서 단청표면에서 흡습을 증가시켜 젖음 현상을 두드러지게 하는 것을 확인할 수 있었다. 또한 X선회절분석과 적외선분광분석을 통하여 확인한 결과 단청안료 중 호분(합분, $CaCO_3$)과 장단($Pb_3O_4$)이 이들 방염제에 함유된 인산염과 반응하여 제삼인산칼슘과 인산납계열의 화합물을 형성하면서 안료층의 용해와 백화현상 등이 발생되는 것을 알 수 있었다. 특히 기준량을 초과하여 방염제를 도포할 경우, 습-건 환경이 반복됨에 따라 문제현상이 심각한 수준으로 발전될 수 있음을 확인하였다. 본 연구의 결과는 향후 현장조사결과와 비교하여 방염제에 의한 단청변색 및 백화발생의 원인을 규명하는데 이용될 예정이다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.418-418
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• 2008

The electrochemical etching of silicon in HF-based solutions is known to form various types of porous structures. Porous structures are generally classified into three categories according to pore sizes: micropore (below 2 nm in size), mesopore (2 ~ 50 nm), and macropore (above 50 nm). Recently, the formation of macropores has attracted increasing interest because of their promising characteristics for an wide scope of applications such as microelectromechanical systems (MEMS), chemical sensors, biotechnology, photonic crystals, and photovoltaic application. One of the promising applications of macropores is in the field of MEMS. Anisotropic etching is essential step for fabrication of MEMS. Conventional wet etching has advantages such as low processing cost and high throughput, but it is unsuitable to fabricate high-aspect-ratio structures with vertical sidewalls due to its inherent etching characteristics along certain crystal orientations. Reactive ion dry etching is another technique of anisotropic etching. This has excellent ability to fabricate high-aspect-ratio structures with vertical sidewalls and high accuracy. However, its high processing cost is one of the bottlenecks for widely successful commercialization of MEMS. In contrast, by using electrochemical etching method together with pre-patterning by lithographic step, regular macropore arrays with very high-aspect-ratio up to 250 can be obtained. The formed macropores have very smooth surface and side, unlike deep reactive ion etching where surfaces are damaged and wavy. Especially, to make vertical microwire or nanowire arrays (aspect ratio = over 1:100) on silicon wafer with top-down photolithography, it is very difficult to fabricate them with conventional dry etching. The electrochemical etching is the most proper candidate to do it. The pillar structures are demonstrated for n-type silicon and the formation mechanism is well explained, while such a experimental results are few for p-type silicon. In this report, In order to understand the roles played by the kinds of etching solution and mask patterns in the formation of microwire arrays, we have undertaken a systematic study of the solvent effects in mixtures of HF, dimethyl sulfoxide (DMSO), iso-propanol, and mixtures of HF with water on the structure formation on monocrystalline p-type silicon with a resistivity with 10 ~ 20 $\Omega{\cdot}cm$. The different morphological results are presented according to mask patterns and etching solutions.

• Nuclear Engineering and Technology
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• 제52권12호
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• pp.2860-2866
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• 2020

Oxide dispersion-strengthened materials W-1wt%Pr₂O₃ and W-1wt%La₂O₃ were synthesized by wet chemical method and spark plasma sintering. The field emission scanning electron microscopy (FE-SEM) analysis, XRD and Vickers microhardness measurements were conducted to characterize the samples. The irradiations were carried out with a 5 keV helium ion beam to fluences up to 5.0 × 10²¹ ions/m² under 600 ℃ using the low-energy ion irradiation system. Transmission electron microscopy (TEM) study was performed to investigate the microstructural evolution in W-1wt%Pr₂O₃ and W-1wt%La₂O₃. At 1.0 × 10²⁰ He⁺/m², the average loops size of the W-1wt%Pr₂O₃ was 4.3 nm, much lower than W-1wt% La₂O₃ of 8.5 nm. However, helium bubbles were not observed throughout in both doped W materials. The effects of pre-irradiation with 1.0 × 10²¹ He⁺/m² on trapping of injected deuterium in doped W was studied by thermal desorption spectrometry (TDS) technique using quadrupole mass spectrometer. Compared with the samples without He⁺ pre-irradiation, deuterium (D) retention of doped W materials increased after He⁺ irradiation, whose retention was unsaturated at the damage level of 1.0 × 10²²D₂⁺/m². The present results implied that irradiation effect of He⁺ ions must be taken into account to evaluate the deuterium retention in fusion material applications.