• 제목/요약/키워드: Wet chemical technique

검색결과 85건 처리시간 0.035초

생물학적 처리에 의한 OCC 스크린 리젝트 내 미해리분의 재활용 (Biological Treatment of OCC Flake in Fine Screen Rejects for Recovery of Fibrous Materials)

  • 성용주;류정용;송봉근
    • 펄프종이기술
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    • 제37권1호
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    • pp.17-24
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    • 2005
  • The increase of using low grade ace, the unsorted mixed grade, as fibrous raw materials for the packaging paper results in the increment of fine screen reject owing to the strong tendency to reduce the slot width. Since the most of screen reject consists of undispersed fiber flake, the suitable treatment of the flake could increase the yield of ace recycling and decrease the amount of solid waste. In this work, the novel method combined the mild mechanical treatment by using Tumbling pulper with the biological treatment was developed and applied to the wet strength flake and the fine screen tail line reject originated from a packaging paper mill. The results showed the new method could provide much better efficiency for the disintegration of undispersed flake and for the recovery of fiber from the rejects. The application of the laboratory scaled-Pack pulper showed the possible separation technique for mill application by fractioning effectively the fiber from the treated solid waste.

Preparation of Y3Al5O12 Nanocrystals by a Glycol Route

  • Bartwal, Kunwar Singh;Kar, Sujan;Kaithwas, Nanda;Deshmukh, Monica;Dave, Mangla;Ryu, Ho-Jin
    • 한국세라믹학회지
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    • 제44권5호
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    • pp.151-154
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    • 2007
  • Yttrium aluminum garnet, $Y_3Al_5O_{12}$ (YAG) is an extensively used solid-state laser host material. YAG nanocrystals were synthesized using low-temperature glycol method, a modified sol-gel method performed at low temperature that consists of a mixture of salts that are mostly nitrates in an aqueous media. Single-phase nanocrystalline YAG was obtained at $850^{\circ}C$, which is a much lower temperature than with other techniques such as a wet-chemical technique. The structural characterization is done by powder X-ray diffraction, scanning electron microscopy and transmission electron microscopy. A crystallite size range of 20-50 nm was observed for the materials prepared at $850-950^{\circ}C$.

김치양념과 유기산을 이용한 소형 적색육어 조미숙성제품 개발 1. 꽁치 조미제품의 숙성 중 화학적 변화 (Development of Conditioning for Small Red Muscle Fish Using Kimchi Seasoning Ingredients and Organic acids 1. Chemical Changes during Conditioning in Conditioned Saury with Kimchi Seasoning and Organic acids)

  • 정인학;임영선
    • 한국수산과학회지
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    • 제34권4호
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    • pp.309-314
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    • 2001
  • 소형 적색육어의 소비기호에 부정적으로 작용하고 있는 잔뼈를 연화시켜 제거하고 비린내를 저감시키기 위하여 대표적인 소형 적색육어인 꽁치, Cololabis saira를 김치양념과 유기산 그리고 미강을 첨가하여 $5\pm0.5^{\circ}C$에서 60일 동안 숙성시키면서 15일 간격으로 숙성 중 화학적 변화를 검토하였다. 마른간이 물간에 비해 염침투도 및 탈수도가 높아 조미양념과의 평형이 15일 정도 빨랐으며, 그로 인해 숙성 중 pH가 높고, 휘발성염기질소함량과 TBA가가 낮아 조미숙성제품 제조시 염 첨가방법은 마른간이 적합하였다. 마른간에 미강을 첨가한 제품은 첨가하지 않은 제품에 비해 미강에 함유되어 있는 아미노산이 제품으로 이행되어 정미성분의 함량을 나타내는 아미노태질소가 높았고, 단백질 산패억제 및 미강의 carotenoid와 tocopherol 둥의 항산화물질에 의한 지질산화 억제효과도 있어 저이용 자원의 활용 증대측면에서 상업적 제품화가 기대된다.

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화학적 습식 에칭을 통한 AlN와 GaN의 결함 및 표면 특성 분석 (Investigation of defects and surface polarity in AlN and GaN using wet chemical etching technique)

  • 홍윤표;박재화;박철우;김현미;오동근;최봉근;이성국;심광보
    • 한국결정성장학회지
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    • 제24권5호
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    • pp.196-201
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    • 2014
  • 화학적 습식 에칭을 통해 AlN와 GaN의 결함 및 표면 특성을 분석했다. 화학적 습식 에칭은 단결정의 결함을 선택적으로 에칭하기 때문에 결정의 품질을 평가하는 좋은 방법으로 주목 받고 있다. AlN와 GaN의 단결정은 NaOH/KOH 용융액을 이용하여 에칭을 했으며, 에칭 후 표면 특성을 알아보기 위해 주사전자현미경(SEM)과 원자힘 현미경(AFM)을 촬영했다. 에치 핏의 깊이를 측정하여 표면에 따른 에칭 속도를 계산했다. 그 결과 AlN와 GaN 표면에는 두 개의 다른 형태에 에치 핏이 형성 되었다. (0001)면의 metal-face(Al, Ga)는 육각 추를 뒤집어 놓은 형태를 갖는 반면 N-face는 육각형 형태의 소구 모양(hillock structure)을 하고 있었다. 에칭 속도는 N-face가 metal-face(Al, Ga)보다 각 각 약 109배(AlN)와 5배 정도 빨랐다. 에칭이 진행되는 동안 에치 핏은 일정한 크기로 증가하다 서로 이웃한 에치 핏들과 합쳐지는 것으로 보여졌다. 또한 AlN와 GaN의 에칭 공정을 화학적 메커니즘을 통해 알아 보았는데, 수산화 이온($OH^-$)과 질소의 dangling bond에 영향을 받아 metal-face(Al, Ga)와 N-face가 선택적으로 에칭되는 것으로 추론되었다.

박막 인덕터 어레이의 Q-Factor 특성에 관한 연구 (A Study on the Q-Factor Characteristics of Integrated Inductors Array)

  • 김인성;민복기;송재성
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 C
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    • pp.2105-2107
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    • 2004
  • In this study, Spiral inductors on the $SiO_2$/Si(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60 ${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the RF frequency were investigated to analyze performance of inductor arrays. Also, We recommend that the reasonable Q-factors, spec's turns and thickness of the coil for inductors cab be set to be ideal condition.

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Improving Accuracy of Soil Property Measurements by NIR Spectroscopy

  • Ryu, Kwan Shig;Cho, Rae Kwang;Park, Woo Churl;Kim, Bok Jin
    • Journal of Applied Biological Chemistry
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    • 제44권4호
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    • pp.177-179
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    • 2001
  • Traditional wet chemical methods for testing of soil properties require extensive time and labor, and cause the discharge of pollutants, making them undesirable for routine soil analyses. This research was conducted to improve the accuracy of soil properties in soil fertility assessments. A total of 140 finely ground soil samples were used to obtain accurate calibrations and validation for estimating soil moisture, OM, and T-N. Finely ground soil samples satisfied the improved accuracy for routine NIR measuring of the field soils. The results indicated that NIR spectroscopy could be used as a routine method for quantitatively determining OM, moisture, and T-N of field soil, although this technique requires many combinations of sample pretreatments and data manipulations to obtain optimal predictions.

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Characterization of SOI Wafers Fabricated by a Modified Direct Bonding Technology

  • Kim, E.D.;Kim, S.C.;Park, J.M.;Kim, N.K.;Kostina, L.S.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.47-51
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    • 2000
  • A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

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The Effect of Hydrogen Plasma on Surface Roughness and Activation in SOI Wafer Fabrication

  • Park, Woo-Beom;Kang, Ho-Cheol;Sung, Man-Young
    • Transactions on Electrical and Electronic Materials
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    • 제1권1호
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    • pp.6-11
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    • 2000
  • The hydrogen plasma treatment of silicon wafers in the reactive ion-etching mode was studied for the application to silicon-on-insulator wafers which were prepared using the wafer bonding technique. The chemical reactions of hydrogen plasma with surface were used for both surface activation and removal of surface contaminants. As a result of exposure of silicon wafers to the plasma, an active oxide layer was found on the surface. This layer was rendered hydrophilic. The surface roughness and morphology were examined as functions of the plasma exposing time and power. In addition, the surface became smoother with the shorter plasma exposing time and power. The value of initial surface energy estimated by the crack propagation method was 506 mJ/㎡, which was up to about three times higher as compared to the case of conventional direct using the wet RCA cleaning method.

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나선형 박막 인덕터의 주파수 특성 (Characteristics of spiral type thin film inductors for the frequency)

  • 박대진;민복기;김인성;송재성
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.890-893
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    • 2004
  • In this study, Spiral inductors on the $SiO_2/Si$(100) substrate were fabricated by the magnetron sputtering method. Cu thin film with the thickness of 2 ${\mu}m$ was deposited on the substrate. Also we fabricated square inductors through the wet chemical etching technique. The inductors are completely specified by the turn width and the spacing between spirals. Both the width and spacing between spirals were varied from 10 to 60${\mu}m$ and from 20 to 70 ${\mu}m$, respectively. Inductance and Q factor dependent on the frequency were investigated to analyze performance of spiral inductors.

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실리콘 저항형 압력센서의 온도 보상에 관한 연구 (A Study on Temperature Compensation of Silicon Piezoresistive Pressure Sensor)

  • 최시영;박상준;김우정;정광화;김국진
    • 대한전자공학회논문지
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    • 제27권4호
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    • pp.563-570
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    • 1990
  • A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

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