• 한국재료학회지
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• 제11권9호
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• pp.740-744
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• 2001

The $Y_2SiO_5:Ce$ phosphors were synthesized by sol-gel technique in order to improve the performance of blue emitting phosphors for field emission display(FED). The resulted$Y_2SiO_5:Ce$ phosphors enhanced the emission intensity. In addition, calcination temperature of sol-gel technique(1300~140$0^{\circ}C$) was lower than that of the solid state reaction(>1$600^{\circ}C$). Under 365 nm and low voltage electron excitations. $Ce^{3+}$ -activated $Y_2SiO_5$phosphors showed blue emission band with a range of 400~ 430nm. Especially, 2mol% $Ce^{3+}$ doped $Y_2SiO_5:Ce$phosphors showed the maximum emission intensity. We have also controlled drying temperature of wet gel, pH, and $H_2O$/TEOS molar ratio for the optimum condition of TEOS hydrolysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.299.2-299.2
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• 2013

We investigated the potassium remaining on a crystalline silicon solar cell after potassium hydroxide (KOH) etching and its effect on the lifetime of the solar cell. KOH etching is generally used to remove the saw damage caused by cutting a Si ingot; it can also be used to etch the rear side of a textured crystalline silicon solar cell before atomic layer-deposited Al2O3 growth. However, the potassium remaining after KOH etching is known to be detrimental to the efficiency of Si solar cells. In this study, we etched a crystalline silicon solar cell in three ways in order to determine the effect of the potassium remnant on the efficiency of Si solar cells. After KOH etching, KOH and tetramethylammonium hydroxide (TMAH) were used to etch the rear side of a crystalline silicon solar cell. To passivate the rear side, an Al2O3 layer was deposited by atomic layer deposition (ALD). After ALD Al2O3 growth on the KOH-etched Si surface, we measured the lifetime of the solar cell by quasi steady-state photoconductance (QSSPC, Sinton WCT-120) to analyze how effectively the Al2O3 layer passivated the interface of the Al2O3 layer and the Si surface. Secondary ion mass spectroscopy (SIMS) was also used to measure how much potassium remained on the surface of the Si wafer and at the interface of the Al2O3 layer and the Si surface after KOH etching and wet cleaning.

• 한국재료학회지
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• 제26권2호
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• pp.95-99
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• 2016

In this study, 5 um sized $ZrSiO_4$ was ground to 1.9 um, 0.3 um, and 0.1 um sized powders by wet high energy milling process, and the sintering characteristics were observed. Pure $ZrSiO_4$ itself can-not be sintered to these levels of theoretical density, but it was possible to sinter $ZrSiO_4$ powder of nano-scale size of, -0.1 um to the theoretical density and to lower the sintering temperature for full density. Also, the decomposition of $ZrSiO_4$ with a size in the micron range resulted in the formation of monoclinic $ZrO_2$; however, in the nano sized range, the decomposition resulted in the tetragonal phase of $ZrO_2$. So, it was possible to improve the sintering characteristics of nano-sized $ZrSiO_4$ powders.

• 한국결정성장학회지
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• 제24권1호
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• pp.41-45
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• 2014

다양한 공정 조건으로 $SiN_x$와 $SiO_2$ 박막을 형성하고 이에 대한 패시베이션 특성에 대한 연구를 수행하였다. Plasma enhanced chemical vapor deposition(PECVD)을 이용하여 증착된 $SiN_x$ 박막의 경우, 증착 두께가 증가함에 따라 페시베이션 특성이 향상되는 것을 관찰하였다. 이는 PECVD 증착 공정 중 유입되는 수소 원자들이 실리콘 표면에 존재하는 Dangling bond와 결합하여 소수 캐리어의 재결합 현상을 효과적으로 감소시켰기 때문이다. 건식 산화법으로 형성된 $SiO_2$ 박막은 습식 산화법으로 형성된 것 보다 치밀한 계면 구조를 가짐으로 인하여 약 20배 이상 우수한 패시베이션 특성을 나타내었다. 건식 산화 공정 온도가 증가함에 따라 패시베이션 특성이 열화되는 현상이 발생하였고, Capacitance-voltage(C-V) 및 Conductance-voltage(G-V) 분석을 통하여 $SiO_2$/실리콘 계면에 존재하는 계면 결함 밀도 증가에 의해 나타나는 현상임을 알 수 있었다.

• 한국세라믹학회지
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• 제51권5호
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• pp.511-515
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• 2014

The thermodynamic instability of bubbles in wet-foam colloidal suspension is due to the substantial area of their gas/liquid interface. Several physical processes lead to gas diffusion from smaller to larger bubbles, resulting in a coarsening and Ostwald ripening of wet foam. This includes a narrowing of the bubble size distribution. The distribution and microstructure of porous ceramics, the adsorption free energy and Laplace pressure of $Al_2O_3$ particle-stabilized colloidal suspension, and $SiO_2$ content were investigated for tailoring the bubble size. Wet-foam stability of more than 80% is related to the degree of hydrophobicity with contact angles of $62-70^{\circ}$ achieved from the surfactant. The contact angle replaces part of the highly energetic interface and lowers the free energy of the system. This leads to an apparent increase in the surface tension (26-33 mN/m) of the colloidal suspension.

• 마이크로전자및패키징학회지
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• 제19권1호
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• pp.39-45
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• 2012

Cu-Cu 패턴의 직접접합 공정을 위하여 Buffered Oxide Etch(BOE) 및 Hydrofluoric acid(HF)의 습식 조건에 따른 Cu와 $SiO_2$의 식각 특성에 대한 평가를 수행하였다. 접촉식 3차원측정기(3D-Profiler)를 이용하여 Cu와 $SiO_2$의 단차 및 Chemical Mechanical Polishing(CMP)에 의한 Cu의 dishing된 정도를 분석 하였다. 실험 결과 BOE 및 HF 습식 식각 시간이 증가함에 따라 단차가 증가 하였고, BOE가 HF보다 더 식각 속도가 빠른 것을 확인하였다. BOE 및 HF 습식 식각 후 Cu의 dishing도 식각시간 증가에 따라 감소하였다. 식각 후 산화막 유무를 알아보기 위해 Cu표면을 X-선 광전자 분광법(X-ray Photoelectron Spectroscopy, XPS)를 이용하여 분석 한 결과 HF습식 식각 후 BOE습식 식각보다 Cu표면산화막이 상대적으로 더 얇아 진 것을 확인하였다.

• 한국전기전자재료학회논문지
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• 제24권9호
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• pp.687-692
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• 2011

Hafnium oxide ($HfO_2$) was very advantageous for substitute material of gate on existing transistor. $HfO_2$ has been widely studied due to high contact with polysilicon and thermal stability and also, it is easily etched by using HF solution. In this study, $HfO_2$ and thermal oxide films were etched by wet etch method using chemical etchant. Etch rate of $HfO_2$ and thermal oxide was linearly increased with increasing concentration of HF and temperature but etch rate of $HfO_2$ was higher than thermal oxide due to $H^+$, $F^-$, and $HF_2^-$ ions at below 0.5% concentration of HF. And also, etch selectivity was improved by adding Hydrazine as additive.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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• pp.47-51
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• 2000

A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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• pp.343-347
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• 2004

High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation

• 대한화학회지
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• 제45권6호
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• pp.546-548
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• 2001

클로로술폰산을 실리카겔과 반응시키면 실리카겔 표면에 황산이 공유결합으로 고정된 실리카황산을 얻게 된다. 무용매 조건하에서 마이크로웨이브를 쪼여주면서 실리카 황산과 젖은 $SiO_2$를 함께 사용하게 되면 아세탈을 화합물로 변화시키는 효과적인 탈아세탈 시약으로 사용할 수 있다.