• Applied Chemistry for Engineering
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• v.20 no.5
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• pp.557-560
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• 2009

In this study, a new wet etching method and the solution for thinning the glass with the thickness below $100{\mu}m$ were investigated. For the preparation of etching solution with low hydrofluoric acid, it was effective to use $NH_4F$ or $NH_4HF_2$ as a main ingredient with the addition of sulfuric acid or nitric acid. Influence of the composition of mixed acid solution and the temperature on the etching rate was investigated. The addition of anionic surfactant provides the function to prevent the adhesion of sludge generated by the etching reaction. A new wet etching pilot device equipped with streaming generation parts was used to test etching of commercial non-alkali glass and soda lime glass. The non-alkali glass with the thickness of 640 ${\mu}m$ and soda lime glass with the thickness of $500{\mu}m$ were etched to $45{\mu}m$ and $100{\mu}m$, respectively, by using the pilot device. After the etching by pilot device, the roughness degree of the glass surface was maintained at $0.01{\sim}0.02{\mu}m$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2004.10a
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• pp.709-713
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• 2004

Characteristics of laser-assisted wet etching of titanium in phosphoric acid were investigated to examine the feasibility of this method for fabrication of high aspect ratio microchannels. Laser power, number of scans, etchant concentration, position of beam waist and scanning speed were taken into consideration as the major process parameters exerting the temperature distribution and the cross sectional profile of etched channels. Experimental results indicated that laser power influences on both etch width and depth while number of scans and scanning speed mainly affect on the etch depth. At a low etchant concentration, the cross sectional profile of an etched channel becomes a U-shape but it gradually turns into a V-shape as the concentration increases. On the other hand, surface of the laser beam focus with respect to the sample surface is found to be a key factor determining the bubble dynamics and thus the process stability. It is demonstrated that metallic microchannels with different cross sectional profiles can be fabricated by properly controlling the process parameters. Microchannels of aspect ratio up to 8 with the width and depth ranges of 8∼32 m and 50∼300 m, respectively, were fabricated.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.9 s.186
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• pp.164-173
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• 2006

The cooling capacity of a micro-heat pipe is mainly governed by the magnitude of capillary pressure induced in the wick structure. For microchannel wicks, a higher capillary pressure is achievable for narrower and deeper channels. In this study, a metallic micro-heat pipe adopting high-aspect-ratio microchannel wicks is fabricated. Micromachining of high-aspect-ratio microchannels is done using the laser-induced wet etching technique in which a focused laser beam irradiates the workpiece placed in a liquid etchant along a desired channel pattern. Because of the direct writing characteristic of the laser-induced wet etching method, no mask is necessary and the fabrication procedure is relatively simple. Deep microchannels of an aspect ratio close to 10 can be readily fabricated with little heat damage of the workpiece. The laser-induced wet etching process for the fabrication of high-aspect-ratio microchannels in 0.5mm thick stainless steel foil is presented in detail. The shape and size variations of microchannels with respect to the process variables, such as laser power, scanning speed, number of scans, and etchant concentration are closely examined. Also, the fabrication of a flat micro-heat pipe based on the high-aspect-ratio microchannels is demonstrated.

• Korean Journal of Materials Research
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• v.29 no.3
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• pp.155-159
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• 2019

Surface plasmon resonance is the resonant oscillation of conduction electrons at the interface between negative and positive permittivity material stimulated by incident light. In particular, when light transmits through the metallic microhole structures, it shows an increased intensity of light. Thus, it is used to increase the efficiency of devices such as LEDs, solar cells, and sensors. There are various methods to make micro-hole structures. In this experiment, micro holes are formed using a wet chemical etching method, which is inexpensive and can be mass processed. The shape of the holes depends on crystal facets, temperature, the concentration of the etchant solution, and etching time. We select a GaAs(100) single crystal wafer in this experiment and satisfactory results are obtained under the ratio of etchant solution with $H_2SO_4:H_2O_2:H_2O=1:5:5$. The morphology of micro holes according to the temperature and time is observed using field emission - scanning electron microscopy (FE-SEM). The etching mechanism at the corners and sidewalls is explained through the configuration of atoms.

• Journal of the Optical Society of Korea
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• v.18 no.3
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• pp.283-287
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• 2014

Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.316-321
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• 2013

The electrical properties and surface morphology changes of a silicon wafer as a function of the HF concentration as the wafer is etched were studied. The HF concentrations were 28, 30, 32, 34, and 36 wt%. The surface morphology changes of the silicon wafer were measured by an SEM ($80^{\circ}$ tilted at ${\times}200$) and the resistivity was measured by assessing the surface resistance using a four-point probe method. The etching rate increased as the HF concentration increased. The maximum etching rate 27.31 ${\mu}m/min$ was achieved at an HF concentration of 36 wt%. A concave wave formed on the wafer after the wet etching process. The size of the wave was largest and the resistivity reached 7.54 $ohm{\cdot}cm$ at an 30 wt% of HF concentration. At an HF concentration of 30 wt%, therefore, a silicon wafer should have good joining strength with a metal backing as well as good electrical properties.

• Textile Coloration and Finishing
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• v.22 no.2
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• pp.123-131
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• 2010

Shape and size controlled synthesis of gold particles has been studied by using wet-chemical method. When ${AuCl_4}^-$ in aqueous $HAuCl_4$ precursor was reduced using $Na_2SO_3$ as a reducing agent, mixtures of spherical, triangular and hexagonal particles were prepared in a few minutes. It was found that the shape selective oxidative etching by ${AuCl_4}^-\;+\;Cl^-$ anions and crystal growth took place simultaneously. As the ${AuCl_4}^-$ and $Cl^-$ concentration increased, yields of large triangular and hexagonal plate type particles increased, while the spherical particles decreased in most cases. Possible etching and growth mechanisms are discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.243.1-243.1
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• 2016

Recently, many groups have attempted to fabricate 3-dimensional (3D) structures of GaN such as pyramids, rods, stripes and annulars. Since quantum structures on non-polar and semi-polar planes of 3D structures have less influence of internal electric filed, multi quantum wells (MQWs) formed on those planes have high quantum efficiency. Especially, pyramidal and annular structures consist of various crystal planes with different emission wavelength, providing a possibillity of phosphor-free white light emtting diodes (WLEDs).[1] However, it still has problem to obtain high color rendering index (CRI) number because of narrow-band emission and poor indium composition caused by the formation of few number of facets during metal-organic chemical vapor deposition growth.[2] If we can fabricate 3D structure having more various facets, we can make broad-band emittied WLEDs and improve CRI number. In this study, we suggest a simple method to fabricate 3D structures having various facet and containing high indium composition by means of a combination of metal-organic chemical vapor deposition and wet chemical etching techniques.

• Bulletin of the Korean Chemical Society
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• v.24 no.11
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• pp.1613-1617
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• 2003

In the phosphoric acid based etchant, the dissolution rates of Mo films were measured by microgravimetry and the corrosion potentials of Mo and Al were estimated by Tafel plot method with various concentrations of nitric acid. Dissolution rate of Mo increased with the nitric acid concentration and reached a limiting value at high concentration of nitric acid in ambient condition. Corrosion potentials of Mo and Al shifted to positive direction and the difference between potentials of both metals was about 1,100 mV and 1,200 mV with 1% and above 4% of $HNO_3$, respectively. For a Mo/Al bilayers, the dissolution rate inversion is the main reason for good taper angle in shower etching process. Taper angles are observed by scanning electron microscope (SEM) after wet etching process for Mo/Al layered films with different concentrations of $HNO_3$. In the etch side profile, it was found that Al corroded faster than Mo below 4% of $HNO_3$ in dip etching process, however, Mo corroded faster above 4%. Trend for variation of taper angle of etched side of Mo/Al layered film can be explained by considering the effect corrosion rates of both metals with various concentrations of $HNO_3$.

• Transactions of Materials Processing
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• v.12 no.7
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• pp.640-646
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• 2003

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as potential application to fabricate the surface nanostructures because of its operational versatility and simplicity. The objective of the work is to suggest new mastless pattern fabrication technique using the combination of machining by nanoindenter and KOH wet etching. The scratch option of the nanoindenter is a very promising method for obtaining nanometer scale features on a large size specimen because it has a very wide working area and load range. Sample line patterns were machined on a silicon surface, which has a native oxide on it, by constant load scratch (CLS) of the Nanoindenter with a Berkovich diamond tip, and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structure was made because of masking effect of the affected layer generated by nano-scratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved patterns can be used as a mold that will be used for mass production processes such as nanoimprint or PDMS molding process. All morphological data of scratch traces were scanned using atomic force microscope (AFM).