• Title/Summary/Keyword: Wet Etching Method

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Comparison of the Existing Wet Etching and the Dry Etching with the ICP Process Method (새로운 ICP 장치를 이용한 고온 초전도체의 Dry Etching과 기존의 Wet Etching 기술과의 비교)

  • 강형곤;임성훈;임연호;한윤봉;황종선;한병성
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.2
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    • pp.158-162
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    • 2001
  • In this report, a new process for patterning of YBaCuO thin films, ICP(inductively coupled plasma) method, is described by comparing with existing wet etching method. Two 100㎛ wide and 2mm long YBaCuO striplines on LaAlO$_3$ substrates have been fabricated using two patterning techniques. And the properties were compared with the critical temperature and the SEM photography. Then, the critical temperatures of two samples were about 88 K, but the cross section of sample using ICP method was shaper than that using the wet etching method. ICP method can be used as a good etching technique process for patterning of YBaCuO superconductor.

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The Effect of Three-Dimensional Morphology with Wet Chemical Etching in Solar Cells

  • Kim, Hyunyub;Park, Jangho;Kim, Hyunki;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.667-667
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    • 2013
  • Optimizing morphology of the front surface with three dimensional structures (3D) in solar cell is essential element for not only effectivelight harvesting but also carrier collection and separation without the cost burden in process. We designed a three-dimensionally ordered front surface with wet chemical etching. Wet chemical etching is a proper way to have three dimensional structures. The method efficiently transmits the incident light at the front surface to a Si absorber and has competitive price in manufacturing when comparing with reactive ion etching (RIE) to have three dimensional structures. This indicates that optimized front surface with three dimensional structures by wet chemical etching will bring effective light management in solar cells.

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Comparison of Etching Rate Uniformity of $SiO_2$ Film Using Various Wet Etching Method ($SiO_2$막의 습식식각 방법별 균일도 비교)

  • Ahn, Young-Ki;Kim, Hyun-Jong;Sung, Bo-Ram-Chan;Koo, Kyo-Woog;Cho, Jung-Keun
    • Journal of the Semiconductor & Display Technology
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    • v.5 no.2 s.15
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    • pp.41-46
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    • 2006
  • Wet etching process in recent semiconductor manufacturing is devided into batch and single wafer type. Batch type wet etching process provides more throughput with poor etching uniformity compared to single wafer type process. Single wafer process achieves better etching uniformity by boom-swing injected chemical on rotating wafer. In this study, etching characteristics of $SiO_2$ layer at room and elevated temperature is evaluated and compared. The difference in etching rate and uniformity of each condition is identified, and the temperature profile of injected chemical is theoretically calculated and compared to that of experimental result. Better etching uniformity is observed with single wafer tool with boom-swing injection compared to single wafer process without boom-swing or batch type tool.

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태양전지용 ZnO:Al 박막의 wet etching 에 따른 특성 변화

  • Jung, Yu-Sup;Kim, Sang-Mo;Kim, Kyung-Hwan
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.235-236
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    • 2008
  • Wet etched ZnO:Al films for thin film solar cells were prepared by Facing Target sputtering(FTS) method. Wet etching has been used to produce a rough TCO surface that enables light trapping in the absorber. The ZnO:Al films for thin film solar cells were etched by HCl 0.5%. The etching performance of ZnO:Al films can be tuned by changing etching time. The etched ZnO:Al films compared to a smooth ZnO:Al thin film structure. From the results, the lowest resistivity of deposited films was $5.67\times10^{-4}$ [$\Omega$-cm] and the transmittance of all ZnO:Al thin films were over 80% in visible range.

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Studies on chemical wet etching of GaN (GaN계 질화합물 반도체의 습식식각 연구)

  • 윤관기;이성대;이일형;최용석;유순재;이진구
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.398-400
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    • 1998
  • In this paper, the etching studies for n-GaN were carried out using the wet chemical, the photo-enhanced-chemical, and the electro-chemical etching methods. The experimental results show that n-GaN is etched in diluted NaOH solution at room temperture and the etched thickness of NaOH and electron concentrations. Te etching rate of n-GaN samples with n.simeq.1*10$^{19}$ cm$^{-3}$ were used to compare the photo-enhanced-chemical etching with the electrochemical etching methods. The removed thickness was 680.angs./25min by the electrochemical etching methods. The removed thickness was 680 .angs./25min by the electrochemical etching method ad 784.angs./25min by the photoenhanced-chemical etching method. The patterns are 100.mu.m*100.mu.m rectangulars covered with SiO$_{2}$film. It is shown that the profile of etched side-wall of the pattern is vertical without dependance of the n-GaN orientations.

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Investigation of Wet Chemical Etching for Surface Texturing of Multi-crystalline Silicon Wafers (다결정 실리콘 웨이퍼의 표면 텍스쳐링을 위한 습식 화학 식각에 대한 연구)

  • Kim, Bum-Ho;Lee, Hyun-Woo;Lee, Eun-Joo;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.19-20
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    • 2006
  • Two methods that can reduce reflectance in solar cells are surface texturing and anti-reflection coating. Wet chemical etching is a typical method that surface texturing of multi-crystalline silicon. Wet chemical etching methods are the acid texturization of saw damage on the surface of multi-crystalline silicon or double-step chemical etching after KOH saw damage removal too. These methods of surface texturing are realized by chemical etching in acid solutions HF-$HNO_3$-$H_2O$. In this solutions we can reduce reflectance spectra by simple process etching of multi-crystalline silicon surface. We have obtained reflectance of 27.19% m 400~1100nm from acidic chemical etching after KOH saw damage removal. This result is about 7% less than just saw damage removal substrate. The surface morphology observed by microscope and scanning electron microscopy (SEM).

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The molten KOH/NaOH wet chemical etching of HVPE-grown GaN (HVPE로 성장된 GaN의 용융 KOH/NaOH 습식화학에칭)

  • Park, Jae Hwa;Hong, Yoon Pyo;Park, Cheol Woo;Kim, Hyun Mi;Oh, Dong Keun;Choi, Bong Geun;Lee, Seong Kuk;Shim, Kwang Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.4
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    • pp.135-139
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    • 2014
  • The hydride vapor phase epitaxy (HVPE) grown GaN samples to precisely measure the surface characteristics was applied to a molten KOH/NaOH wet chemical etching. The etching rate by molten KOH/NaOH wet chemical etching method was slower than that by conventional etching methods, such as phosphoric and sulfuric acid etching, which may be due to the formation of insoluble coating layer. Therefore, the molten KOH/NaOH wet chemical etching is a better efficient method for the evaluation of etch pits density. The grown GaN single crystals were characterized by using X-ray diffraction (XRD) and X-ray rocking curve (XRC). The etching characteristics and surface morphologies were studied by scanning electron microscopy (SEM). From etching results, the optimum etching condition that the etch pits were well independently separated in space and clearly showed their shape, was $410^{\circ}C$ and 25 min. The etch pits density obtained by molten KOH/NaOH wet chemical etching under optimum etching condition was around $2.45{\times}10^6cm^{-2}$, which is commercially an available materials.

Electrode Fabrication of MWCNT-PDMS Strain Sensors by Wet-etching (습식 식각을 이용한 MWCNT-PMDS 변형율 센서 전극 생성에 관한 연구)

  • Jung, La-Hee;Hwang, Hui-Yun
    • Composites Research
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    • v.34 no.6
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    • pp.387-393
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    • 2021
  • This paper investigated the electrical properties of multiwall carbon nanotube reinforced polydimethylsiloxane (CNT-PDMS) strain sensors with copper electrodes on the wet-etched surface. MWCNT-PDMS strain sensors were fabricated according to the wt% of MWCNT. Surfaces on the electrode area were wet-etched with various etching duration and silver epoxy adhesives were spread on the wet-etched surface. Finally, we attached the copper electrodes to the MWCNT-PMDS strain sensors. We checked the electric conductivities by the two-probe method and sensing characteristics under the cyclic loading. We observed the electric conductivity of MWCNT-PDMS strain sensors increased sharply and the scattering of the measured data decreased when the surface of the electrode area was wet-etched. Initial resistances of MWCNT-PDMS strain sensors were inversely proportion to wt% of MWCNT and the etching duration. However, the resistance changing rates under 30% strain increased as wt% of MWCNT and the etching duration increased. Decreasing rate of the electric resistance change after 100 repetitions was smaller when wt% of MWCNT was larger and the etching duration was short. This was due to the low initial resistance of the MWCNT-PMDS strain sensors by the wet-etching.

Manufacturing Large-scale SiNx EUV Pellicle with Water Bath (물중탕을 이용한 대면적 SiNx EUV 펠리클 제작)

  • Kim, Jung Hwan;Hong, Seongchul;Cho, Hanku;Ahn, Jinho
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.1
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    • pp.17-21
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    • 2016
  • EUV (Extreme Ultraviolet) pellicle which protects a mask from contamination became a critical issue for the application of EUV lithography to high-volume manufacturing. However, researches of EUV pellicle are still delayed due to no typical manufacturing methods for large-scale EUV pellicle. In this study, EUV pellicle membrane manufacturing method using not only KOH (potassium hydroxide) wet etching process but also a water bath was suggested for uniform etchant temperature distribution. KOH wet etching rates according to KOH solution concentration and solution temperature were confirmed and proper etch condition was selected. After KOH wet etching condition was set, $5cm{\times}5cm$ SiNx (silicon nitride) pellicle membrane with 80% EUV transmittance was successfully manufactured. Transmittance results showed the feasibility of wet etching method with water bath as a large-scale EUV pellicle manufacturing method.

Etching Treatment of Vertically Aligned Carbon Nanotubes for the Application to Biosensor (바이오센서로의 응용을 위한 수직 배열된 탄소나노튜브의 식각처리)

  • Choi, Eun-Chang;Park, Yong-Seob;Choi, Won-Seok;Hong, Byung-You
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.7
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    • pp.594-598
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    • 2008
  • The metal catalyst particles which there is as impurities on a tip part of carbon nanotube (CNT) are not good to apply it to a nano-electronic device. It was very important the opening of CNT-tip to fix a target bio material and a material to accept in CNT in a biosensor, so we performed $HNO_3$ wet etching to remove the metal catalyst particle which there was on a tip part of CNT grown up in the study and observed the opened CNT-tip with etching time. We synthesized the CNTs using a HF-PECVD method and choses the CNT length of 700 nm for the application of nano-electronic device such as a biosensor etc.. We observed the opened CNT-tip with wet etching times of $HNO_3$ (10, 30, 60 min). From the results, we observed that the CNT-tip was opened with the increase of wet etching time lively. In case of CNTs etched during 60 min, we confirmed that there was not the ratio of Ni included in CNTsI as catalyst. Conclusively, in the case of CNT etched for 60 minutes, it is completely good for application of a biosensor and, in addition, the metal-free CNTs will contribute to the application of other nanoelectronic devices.