• 한국분말재료학회지
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• 제5권3호
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• pp.184-191
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• 1998

The fabrication process and properties of SiC particulate preforms with high volume fraction above 50% were investigated. The SiC particulate preforms were fabricated by vacuum-assisted extraction method after wet mixing of SiC particulates of 48 ${\mu}m$ in diameter, $SiO_2$ as inorganic binder, cationic starch as organic binder and polyacrylamide as dispersant in distilled water. The SiC particulate preforms were consolidated by vacuum-assisted extraction, and were followed by drying and calcination. The drying processes were consisted with natural drying at $25^{\circ}C$ for 36 hrs and forced drying at 10$0^{\circ}C$ for 12 hrs in order to prevent the micro-cracking of SiC particulates preform. The compressive strengths of SiC particulate preforms were dependent on the inorganic binder content, calcination temperature and calcination time. The compressive strength of SiC preform increased from 0.47 MPa to 1.79 MPa with increasing the inorganic binder content from 1% to 4% due to the increase of $SiO_2$ flocculant between the interfaces of SiC particulates. The compressive strength of SiC preform increased from 0.90 MPa to 3.21 MPa with increasing the calcination temperatures from 800 to 120$0^{\circ}C$ under identical calcination time of 4hrs. The compressive strength of SiC preform increased from 0.92 to 1.95 MPa with increasing the calcination time from 2 hrs to f hrs at calcination temperature of 110$0^{\circ}C$. The increase of compressive strength of SiC preform with increasing the calcination temperature and time is due to the formation of crystobalite $SiO_2$ phase at the interfaces of SiC particulates.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1816-1818
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• 1996

A micro-size nonthermal plasma generator, using a $SiO_2$ film as a dielectric barrier, has been studied experimentally for a high frequency ac voltage in 2LPM oxygen gas fed. The $SiO_2$ film as a micro-size dielectric barrier was made by the wet oxidation of n-type Si wafer($220[{\mu}mt]$). It can be generated ozone, as a nonthermal plasma intensity parameter, at very low level of applied voltage about 1[kV] by using the micro-size dielectric barrier. As a result, in case that have no air gap spacing i.e. surface discharge case shows relatively higher ozone concentration rather than that case of the micro-airgap spacing.

• 한국세라믹학회지
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• 제35권7호
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• pp.685-690
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• 1998

Al2O3에 대한 용융 Al의 자발적 침윤 기구를 밝히기 위하여 순수한 Al 및 Al-(Si)-Mg 합금의 Al2O3에 대한 wet-ting angle과 침윤 특성을 진공, 아르곤, 그리고 질소분위기에서 관찰하였다. Al2O3에 대한 용융 Al 및 Al 합금의 wetting은 진공 분위기에서만 이루어졌으나, Al2O3에 대한 용융 Al 합금의 자발적 침윤은 질소 분위기하 Al 합금에 합금 원소로써 Mg가 함유되었을 때에 일어났다. Al2O3에 대한 용융 Al 및 Al 합금의 wettability와 자발적 침윤 특성의 차이는 Al2O3 표면에 형성되는 Mg-N화합물에 직접적인 영향을 받는 것으로 나타났다. Al2O3 입자 표면에 얇게 형성되는 Mg와 질소의 화합물 즉, Mg3N2가 Al2O3에 대한 용윤 Al 합금의 wettability를 향상시켜 $700^{\circ}C$의 온도에서도 Al 합금의 자발적 침윤이 가능하여 Al/Al2O3 복합재료를 무가압 상태에서 제조할 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• 한국세라믹학회지
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• 제50권2호
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• pp.93-102
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• 2013

Macro porous ceramics possessing controlled microstructures and chemical compositions have increasingly proven useful in the industrial sphere. Their sintered structures have found application in both established and emerging, areas such as thermal insulation in buildings, filtration of liquids and molten materials, refractory insulation, bone scaffolds and tissue engineering. Stable ceramic foams can be formed by wet chemical methods using inorganic particles(e.g., $Al_2O_3$ or $SiO_2$). The wet foams are dried and sintered with improved porosity and mechanical properties. This review examines the different techniques used to prepare porous ceramics from ceramic foams, focusing on the explanation of this versatile method of direct foaming from the past to the present. Comparisons of the processes and the processing parameters are explained with the produced microstructures.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.319.1-319.1
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• 2016

Recently, the Al-doped ZnO (ZnO:Al) films are intensively used in thin film a-Si solar cell applications due to their high transmittance and good conductivity. The textured ZnO:Al films are used to enhance the light trapping in thin film solar cells. The wet etch process is used to texture ZnO:Al films by dipping in diluted acidic solutions like HCl or HF. During that process the glass substrate could be damaged by the acidic solution and it may be difficult to apply it for the inline mass production process since it has to be done outside the chamber. In this paper we report a new technique to control the surface morphology of RF-sputtered ZnO:Al films. The ZnO:Al films are textured with vaporized HF formed by the mixture of HF and H2SiO3 solution. Even though the surface of textured ZnO:Al films by vapor etching process showed smaller and sharper surface structures compared to that of the films textured by wet etching, the haze value was dramatically improved. We achieved the high haze value of 78% at the wavelength of 540 nm by increasing etching time and HF concentration. The haze value of about 58% was achieved at the wavelength of 800 nm when vapor texturing was used. The ZnO:Al film texture by HCl had haze ratio of about 9.5 % at 800 nm and less than 40 % at 540 nm. In addition to low haze ratio, the texturing by HCl was very difficult to control etching and to keep reproducibility due to its very fast etching speed.

• 한국재료학회지
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• 제14권2호
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• pp.90-93
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• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• Journal of information and communication convergence engineering
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• 제1권2호
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• 대한기계학회논문집
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• 제17권12호
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• pp.3083-3093
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• 1993

Friction and wear at ceramic coated surfaces of aluminum alloy were experimentally studied using a Ring-on-Block wear test machine. Ceramic materials coated on aluminum alloy surfaces were WC, CrC, $Al_{2}O_{3}$ by a plasma spray; and $Al_{2}O_{3}$,$Al_{2}SiO_{5}$, $Na_{2}B_{4}O_{7}$,$Na_{4}P_{2}O_{7}$, and $Al_{2}O_{3}-ZrO_{2}$ composite coating by an Anodic Spark Depositon. They were tested under the sliding wet contact and compared with aluminum alloys and steels. Test results showed that ceramic coated surfaces, in general, have better anti-wear property than those of aluminum alloys due to increase in the surface hardness ; however, they also showed higher coefficients of friction and changes in wear mechanisms, resulting in brittle fractures.

• Corrosion Science and Technology
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• 제14권3호
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• pp.127-131
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• 2015

Model alloys Fe-9Cr, Fe-20Cr and Fe-20Cr-20Ni (wt. %) with 0.1 and 0.2 % Si were exposed to $Ar-20CO_2-20H_2O$ gas at $818^{\circ}C$. The undoped alloys formed a thick iron-rich oxide scale. The additions of Si reduced scaling rates of Fe-9Cr to some extent but significantly suppressed the formation of iron oxide scales on Fe-20Cr and Fe-20Cr-20Ni. Carburisation also occurred in all undoped alloys, but not in Si-containing Fe-20Cr and Fe-20Cr-20Ni. Protection against carburisation was a result of the formation of an inner scale layer of silica.