• Journal of Institute of Control, Robotics and Systems
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• v.14 no.4
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• pp.361-364
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• 2008

Tips of probe card were fabricated using MEMS technology. P-type silicon wafer with $SiO_2$ layer was used as a substrate for fabricating the probe card. Ni-Cr and Au used as seed layer for electroplating Ni were deposited on the silicon wafer. Line patterns for probing devices were formed on silicon wafer by electroplating Ni through mold which formed by MEMS technology. Bridge structure was formed by wet-etching the silicon substrate. AZ-1512 photoresist was used for protection layer of back side and DNB-H100PL-40 photoresist was used for patterning of the front side. The mold with the thickness of $60{\mu}m$ was also formed using THB-120N photoresist and probe tip with thickness of $50{\mu}m$ was fabricated by electroplating process.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.199-199
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• 2009

실리콘을 기판으로 하는 대부분의 태양전지에서는 표면반사에 의한 광 에너지 손실을 최소화 시키고자 습식에칭 (wet etching)에 의한 텍스쳐링 처리가 이루어진다. 그러나 습식 에칭은 공정 과정이 번거롭고 비용이 많이 든다. Inductively Coupled Plasma Etcher 장비를 이용한 플라즈마 에칭 (plasma etching)을 실리콘 표면에 적용하여 공정을 간단하고, 저렴하게 하며 반사도를 획기적으로 낮추는 기술을 개발되었다. 플라즈마 에칭으로 형성된 나노구조는 내부전반사를 일으키며 대부분의 태양에너지를 흡수한다. 나노구조는 필라(pillar)의 형태로 나타나며, 이는 플라즈마 에칭 시 발생하는 이온폭격과 에칭 측벽 식각 보호막 (SiOxFy : Silicon- Oxy-Fluoride)의 형성 때문이다. 최저의 반사도를 얻기 위해서 나노필라 형성에 기여하는 플라즈마 에칭 시간, RF bias power, SF6/O2 gas ratio의 변화에 따른 실험이 진행되었다. 플라즈마 발생 초기에는 표면의 거칠기만 증가할 뿐 필라가 형성되지 않지만 특정조건에서 4um 이상의 필라를 얻는다. 이 구조에 알루미늄 전극을 형성하여 전기적 특성을 관찰하였다. 플라즈마 에칭을 적용하여 제작된 태양전지는 표면의 반사도가 가시광 영역에서 약 1%에 불과하며, 마스크 없이 공정이 가능한 장점이 있다.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.69-75
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• 2000

We have investigated the feasibility of spin on glass (SOG) film from polysilazane-type resin as a premetal dielectric (PMD) layer of the next-generation ultra-large scale integrated (ULSI) devices. A commercial polysilazane resin and a polysilazane-type resin with oxidizing agent were spin-coated and cured to form SOG films. In order to study the effect of oxidizing agent and annealing, the SOG films were characterized as cured and after annealing at $400^{\circ}C$ to $900^{\circ}C$. the density and the resistance against wet chemical of the SOG films were improved by the addition of oxidizing agent, because oxidizing agent enhanced the conversion from polysilazane polymer to $SiO_2$. The hole profile issue associated with insufficient curing of polysilazane in narrow gaps was also resolved by oxidizing agent, while the gapfill capability of SOG was not deteriorated by oxidizing agent.

• Journal of Korean Society of Environmental Engineers
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• v.36 no.5
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• pp.342-351
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• 2014

The present paper investigates the performance of direct wet mineral carbonation technology to fix carbon dioxide ($CO_2$) from relatively high $CO_2$ concentration feeding gas using wollastonite ($CaSiO_3$)-water (and 0.46 M acetic acid) suspension solution. To minimize the energy consumed on the process, the carbonation in this work is carried out at atmospheric pressure and slightly higher room temperature. As a result, carbon fixation is confirmed on the surface of $CaSiO_3$ after carbonation with wollastonite-water suspension solution and its amount is increased according to the $CO_2$ composition in the feeding gas. The leaching and carbonation ratio of wollastonite-water suspension system obtained from the carbonation with 50% of $CO_2$ composition feeding gas is 13.2% and 10.4%, respectively. On the other hand, the performance of wollastonite-acetic acid in the same condition is 63% for leaching and 1.39% for carbonation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.330-332
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• 2013

소 분위기에서 플라즈마 표면 처리의 경우 기판 표면에 존재하는 수소와 탄소 유기물들이 산소와 반응하여 $H_2O$와 $CO_2$ 등으로 제거되며 표면에 오존 결합을 유도하여 표면 에너지를 증가시키는 것으로 알려져 있다. ZnO 나노구조물을 성장시키는 방법으로는 MOCVD (Metal-Organic Chemical Vapor Deposited), PLD (Pulsed Laser Deposition), VLS (Vapor-Liquid-Solid), Sputtering, 습식화학합성법(Wet Chemical Method) 방법 등이 있다. 그중에서도 습식화학합성법은 쉽게 구성요소를 제어할 수 있고, 저비용 공정과 낮은 온도에서 성장 가능하며 플렉서블 소자에도 적용이 가능하다. 그러므로 본 연구에서는 플라즈마 표면처리에 따라 표면에너지를 변화하여 습식화학합성법으로 성장시킨 ZnO nanorods의 밀도를 제어하고 photolithography 공정 없이 패터닝 가능성을 유 무를 판단하는 연구를 진행하였다. 기판은 Si wafer (100)를 사용하였으며 세척 후 표면에너지 증가를 위한 플라즈마 표면처리를 실시하였다. 분위기 가스는 Ar/$O_2$를 사용하였으며 입력전압 400 W에서 0, 5, 10, 15, 60초 동안 각각 실시하였다. ZnO nanorods의 seed layer를 도포하기 위하여 Zinc acetate dehydrate [Zn $(CH_3COO)_2{\cdot}2H_2O$, 0.03 M]를 ethanol 50 ml에 용해시킨 후 스핀코팅기를 이용하여 850 RPM, 15초로 5회 실시하였으며 $80^{\circ}C$에서 5분간 건조하였다. ZnO rods의 성장은 Zinc nitrate hexahydrate [$Zn(NO_3)_2{\cdot}6H_2O$, 0.025M], HMT [$C6H_{12}N_4$, 0.025M]를 deionized water 250 ml에 용해시켜 hotplate에 올리고 $300^{\circ}C$에서 녹인 후 $200^{\circ}C$에서 3시간 성장시켰다. ZnO nanorods의 성장 공정은(Fig. 1)과 같다. 먼저 플라즈마 처리한 시편의 표면에너지 측정을 위해 접촉각 측정 장치[KRUSS, DSA100]를 이용하였다. 그 결과 0, 5, 10, 15, 60 초로 플라즈마 표면 처리했던 시편이 각각 Fig. l, 2와 같이 $79^{\circ}$, $43^{\circ}$, $11^{\circ}$, $6^{\circ}$, $7.8^{\circ}$로 측정되었으며 이것을 각각 습식화학합성법으로 ZnO nanorods를 성장 시켰을 때 Fig. 3과 같이 밀도 차이를 확인할 수 있었다. 이러한 결과를 바탕으로 기판의 표면에너지를 제어하여 Fig. 4와 같이 나타나며 photolithography 공정없이 ZnO nanorods를 패터닝을 할 수 있었다. 본 연구에서는 플라즈마 표면 처리를 통하여 표면에너지의 변화를 제어함으로써 ZnO nanorods 성장의 밀도 차이를 나타냈었다. 이러한 저비용, 저온 공정으로 $O_2$, CO, $H_2$, $H_2O$와 같은 다양한 화학종에 반응하는 ZnO를 이용한 플렉시블 화학센서에 응용 및 사용될 수 있고, 플렉시블 디스플레이 및 3D 디스플레이 소자에 활용 가능하다.

• Applied Chemistry for Engineering
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• v.10 no.8
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• pp.1129-1135
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• 1999

The reduction of $SO_2$ by CO over supported cobalt catalysts was investigated within the temperature range of $350{\sim}550^{\circ}C$, initial $SO_2$ concentration of 1000~10000 ppm, $CO/SO_2$ molar ratio of 1.0~3.0 and space velocity of $5000{\sim}15000h^{-1}$. Several types of supports such as ${\gamma}-Al_2O_3$, $TiO_2$ were tested. The $SO_2$ conversion and selectivity to elemental sulfur were investigated using a differential fixed bed reactor at atmospheric pressure. The catalyst prepared by wet impregration of 5 wt % cobalt on ${\gamma}-Al_2O_3$ showed $SO_2$ conversion higher than 90% and COS yield lower than 6% at temperature above $400^{\circ}C$. The optimum $CO/SO_2$ molar ratio was investigated as 2.0. At higher $CO/SO_2$ molar ratio, the $SO_2$ conversion became higher but the main product was COS. The effect of $SO_2$ concentration and space velocity over $SO_2$ conversion and COS yield was not appreciable in the experimental range. The activated cobalt phase was detected as $CoS_2$ and the $CoS_2$ phase unchanged even after reaction.

• Economic and Environmental Geology
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• v.39 no.6 s.181
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• pp.675-687
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• 2006

The purpose of this study is to determine the geochemical characteristics of the stream sediments in the Cheongpung area. So that we can understand the natural background and predict the prospects of geochemical disaster, if any. We collected the stream sediments samples by wet sieving along the primary channels and slow dried the collected samples in the laboratory and ground them to pass a 200 mesh using an alumina mortar and pestle for chemical analysis. Miner-alogical characteristics, major, trace and rare earth elements were determined by XRD, XRF, ICP-AES and NAA analysis methods. For geochemical characteristics on the geological group of stream sediments, the studied area was grouped into granitic gneiss area, metatectic gneiss area, Dado tuff area, Yuchi conglomerate area, and Neungju flow area in the Cheongpung area. Contents of major elements for the stream sediments in the Cheongpung area were $SiO_2\;47.31{\sim}72.81\;wt.%,\;A1_2O_3 \;11.26{\sim}21.88\;wt.%,\;Fe_2O_3\;2.83{\sim}8.39\;wt.%,\;CaO\;0.34{\sim}7.54\;wt.%,\;MgO\; 0.55{\sim}3.59\;wt.%,\;K_2O\;1.71{\sim}4.31\;wt.%,\;Na_2O\;0.56{\sim}2.28\;wt.%,\;TiO_2\;0.46{\sim}1.24\;wt.%,\;MnO\;0.04{\sim}0.27\;wt.%,\;P_2O_5\;0.02{\sim}0.45\;wt.%$. The con-tents of trace and rare earth elements for the stream sediments were $Ba\;700ppm{\sim}8990ppm,\;Be\;1.0{\sim}3.50ppm,\;Cu\;6.20{\sim}60ppm,\;Nb\;12{\sim}28ppm,\;Ni\;4.4{\sim}61ppm,\;Pb\;13{\sim}34ppm,\;Sr\;65{\sim}787ppm,\;V\;4{\sim}98ppm,\;Zr\;32{\sim}164ppm,\;Li\;21{\sim}827ppm,\;Co\;3.68{\sim}65ppm,\;Cr\;16.7{\sim}409ppm,\;Cs\;2.72{\sim}37.1ppm,\;Hf\;4.99{\sim}49.2ppm,\;Rb\;71.9{\sim}649ppm,\;Sb\;0.16{\sim}5.03ppm,\;Sc\;4.97{\sim}52ppm,\;Zn\;26.3{\sim}375ppm,\;Ce\;60.6{\sim}373ppm,\;Eu\;0.82{\sim}6ppm,\;Yb\;0.71{\sim}10ppm$.

• Economic and Environmental Geology
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• v.25 no.3
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• pp.259-273
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• 1992

The Seongsan mine is one of the largest dickite deposits in the southwestern part of the Korean Peninsula. The main constithent minerals of the ore are dickite and quartz with accessory alunite, kaolinite and sericite. The geology around the Seongsan mine consists mainly of the late Cretaceous felsic volcanic rocks. In the studied area, these rocks make a synclinal structure with an axis of E-W direction plunging to the east. Most of the felsic volcanic rocks have undergone extensive hydrothermal alteration. The hydrothermally altered rocks can be classified into the following zones: Dickite, Dickite-Quartz, Quartz, Sericite, Albite and Chlorite zones, from the center to the margin of the alteration mass. Such zonal arrangement of altered rocks suggests that the country rocks, most of which are upper part of the rhyolite and welded tuff, were altered by strongly acid hydrothermal solutions. It is reasonable to consider that initial gas and solution containing $H_2S$ and other compounds were oxidized near the surface, and formed hydrothermal sulfuric acid solutions. The mineralogical and chemical changes of the altered rocks were investigated using various methods, and chemical composition of fifty-six samples of the altered rocks were obtained by wet chemical analysis and X.R.F. methods. On the basis of these analyses, it was found that some components such as $SiO_2$, $Al_2O_3$, $Fe_2O_3$, CaO, MgO, $K_2O$, $Na_2O$ and $TiO_2$ were mobilized considerably from the original rocks. The formation temperature of the deposits was estimated as higher than $200^{\circ}C$ from fluid inclusion study of samples taken from the Quartz zone. On the basis of the chemical composition data on rocks and minerals and estimated temperatures, the hydrothermal solutions responsible for the formation of the Seongsan dickite deposits were estimated to have the composition: $m_{K^+}=0.003$, $m_{Na^+}=0.097$, $m_{SiO_2(aq.)}=0.008$ and pH=5.0, here "m" represents the molality (mole/kg $H_2O$).

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.395-400
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• 2007

Ambient drying sol-gel processing was used for monolithic silica ambigels in the temperature range of $130-250^{\circ}C$. A new method of mesopore ambigels, which mean the aerogels prepared by ambient pressure drying process synthesis, is suggested at first. This method includes two important approaches. The first point is that $SiO_{2}$ surface modification of wet gel was performed by trimethylchlorosilane in n-butanol solution. This procedure is provided the silica gel mesopore structure formation. The second point is a creation of the ternary azeotropic mixture water/n-butanol/octane as porous liquid, which is effectively provided removing of water such a low temperature by 2 step drying condition under ambient pressure. The silica aerogels, which were prepared by ambient pressure drying from azeotropic mixture of water/n-butanol/octane, are transparent, crack-free and mesoporous (pore size ${\sim}$ 5.6 nm) with surface area of ${\sim}$ $923{\;}m^2/g$, bulk density of $0.4{\;}g/cm^3$ and porosity of 85 %.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.201-208
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• 2006

Optical characteristics of InGaAs quantum dot (QD) laser structures with an Al native oxide (AlOx) layer as a current-blocking layer were studied by means of photoluminescence (PL), PL excitation, and spatially-resolved micro-PL techniques. The InGaAs QD samples were first grown by molecular-beam epitaxy (MBE), and then prepared by wet oxidation and thermal annealing techniques. For the InGaAs QD structures treated by the wet oxidation and thermal annealing processes, a broad PL emission due to the intermixing effect of the AlOx layer was observed at PL emission energy higher than that of the non-intermixed region. We observed a dominant InGaAs QD emission at about 1.1 eV in the non-oxide AlAs region, while InGaAs QD-related emissions at about 1.16 eV and $1.18{\sim}1.20eV$ were observed for the AlOx and the SiNx regions, respectively. We conclude that the intermixing effect of the InGaAs QD region under an AlOx layer is stronger than that of the InGaAs QD region under a non-oxided AlAs layer.