• Wind and Structures
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• 제31권5호
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• pp.381-392
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• 2020

Despite that the failure of sign structure may not have disastrous consequence, its sheer number still ensures the need for rigorous safety standard to regulate their maintenance and construction. During its service life, a sign structure is subject to extensive wind load, sometimes well over its permissible design load. A fragility analysis of a sign structure offers a tool for rational decision making and safety evaluation by using a probabilistic framework to consider the various sources of uncertainty that affect its performance. Wind fragility analysis was used to determine the performance of sign structure based on the performance of its connection components. In this study, basic wind fragility concepts and data required to support the fragility analysis of the sign structure such as sign panel's parameters, connection component's parameters, as well as wind load parameters were presented. Fragility and compound fragility analysis showed disparity between connection component. Additionally, reinforcement of the connection system was introduced as an example of the utilization of wind fragility results in the retrofit decision making.

• 대한전자공학회논문지
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• 제27권5호
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• pp.716-723
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• 1990

Transmission electron microscopy (TEM) and anger electron microscopy(AES) studies of GaAs/AlxGa1-xAs(x=0.58) quantum wells grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) are carried out. Isolated quantum well structure having the well width as small as 15 \ulcornerand multiquantum well structure, which consisted of 51 alternating layers with each thickness of 10\ulcorner were suscessfully grown. TEM analyses have shown that their interfaces were almost completely coherent without any structural disorder, alloy clustering and crystal defect. AES depth resolution have shown the compositional periodicity of superlattice structure.

• 전자공학회논문지D
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• 제34D권4호
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• pp.27-32
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• 1997

In resonant tunneling diodes with the quantum well structure showing the negative differential resistance (NDR), it is essential to increase both the peak-to-valley current ratio (PVCR) and the peak current desnity ( $J_{p}$) for the accurate digital switching operation and the high output of the device. In this work, a resonant interband tunneling diode (RITD) with single quantum well structure, which is composed of I $n_{0.47}$As/I $n_{0.52}$A $l_{0.48}$As heterojunction on the InP substrate, is fabricated ot improve PVCR and JP, and then the dependence of I-V charcteristics on the width of the quantum well was investigated.d.ted.d.

• Journal of Korean Vacuum Science & Technology
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• 제4권1호
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• pp.11-17
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• 2000

The low temperature electron mobilities were investigated in Si/$Si_{1-x}Ge_{x}$ modulation Doped (MOD) quantum well structure with thermally grown oxide. N-type Si/$Si_{1-x}Ge_{x}$ structures were fabricated by a gas source MBE. Thermal oxidation was carried out in a dry $O_2$ atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by a Hall effect and a magnetoresistant effect at low temperatures down to 0.4 K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2 DEG) in a tensile strained Si quantum well. The electron sheet density ($n_{s}$) of 1.5${\times}$$10^{12}$[$cm^{-2}$] and corresponding electron mobility of 14200 [$cm^2$$V^{-1}$$s^{-1}$] were obtained at low temperature of 0.4 K from Si/$Si_{1-x}Ge_{x}$ MOD quantum well structure with thermally grown oxide.

• 전기학회논문지
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• 제66권12호
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• pp.1772-1781
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• 2017

In this study, the design methodology for alleviating the overfitting problem of Polynomial Neural Networks(PNN) is realized with the aid of two kinds techniques such as L2 regularization and Sum of Squared Coefficients (SSC). The PNN is widely used as a kind of mathematical modeling methods such as the identification of linear system by input/output data and the regression analysis modeling method for prediction problem. PNN is an algorithm that obtains preferred network structure by generating consecutive layers as well as nodes by using a multivariate polynomial subexpression. It has much fewer nodes and more flexible adaptability than existing neural network algorithms. However, such algorithms lead to overfitting problems due to noise sensitivity as well as excessive trainning while generation of successive network layers. To alleviate such overfitting problem and also effectively design its ensuing deep network structure, two techniques are introduced. That is we use the two techniques of both SSC(Sum of Squared Coefficients) and $L_2$ regularization for consecutive generation of each layer's nodes as well as each layer in order to construct the deep PNN structure. The technique of $L_2$ regularization is used for the minimum coefficient estimation by adding penalty term to cost function. $L_2$ regularization is a kind of representative methods of reducing the influence of noise by flattening the solution space and also lessening coefficient size. The technique for the SSC is implemented for the minimization of Sum of Squared Coefficients of polynomial instead of using the square of errors. In the sequel, the overfitting problem of the deep PNN structure is stabilized by the proposed method. This study leads to the possibility of deep network structure design as well as big data processing and also the superiority of the network performance through experiments is shown.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2012년도 추계학술대회
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• pp.251-254
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• 2012

본 논문에서는 양자 우물 구조 변화에 따른 GaN 기반 LED의 출력 특성을 분석하였다. 사용된 LED의 기본 구조는 GaN 버퍼층을 기반으로 GaN 장벽과 InGaN 양자 우물로 이루어진 활성 영역이 AlGaN EBL(Electron Blocking Layer)과 AlGaN HBL(Hole Blocking Layer) 사이에 구성되어 있다. ISE-TCAD를 이용하여 LED 활성영역의 양자 우물의 두께와 개수, 장벽의 도핑 변화에 따른 출력 전력, 내부 양자 효율 특성을 분석하였다.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.109-112
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• 2007

In this paper we describe a robust method of improving precision in monitoring high energy ion implantation processes. Ion implant energy accuracy was measured in the device manufacturing process using an unpatterned implanted layer on an intrinsic p-type silicon wafer. To increase Rs sensitivity to energy at the well implant process, a PN junction structure was formed by P-well and deep N-well implants into the p-type Si wafer. It was observed that the depletion layer formed by the PN junction was very sensitive to energy variation of the well implant. Conclusively, it can be recommended to monitor well implant processes using the Rs measurement method described herein, i.e., a PN junction diode structure since it shows excellent Rs sensitivity to variation caused by energy difference at the well implant step.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.121-125
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square- and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Transactions on Electrical and Electronic Materials
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• 제4권5호
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• pp.19-23
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• 2003

Time-resolved photoluminescence from InGaN/GaN multi-quantum well structures was investigated for two different shapes of square-and trapezoidal wells grown by metal-organic chemical vapor deposition. To compare to the conventional square well structure with a radiative recombination lifetime of 0.170 nsec, the large value of lifetime of 0.540 nsec from trapezoidal well were found at room temperature. This value is similar to the value for GaN host material indicating no confinement effect of quantum well. Furthermore, the high resolution transmission electron microscopy image provides the In clustering effect in the trapezoidal well structure.

• Composites Research
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• 제16권6호
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• pp.56-61
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• 2003

In this Paper, a fiber Bragg grating(FBG) sensor system is described and FBGs are well-suited for long term and extremely severe experiments, where traditional strain gauges fail. In the system. a reflect wave-length measurement method which employs a tunable light source to find out the center wave-length of FBG sensor is used. We apply the FBG system to nuclear energy Power Plant for structural integrity test to measure the displacement of the structure under designed pressure and to check the elasticity of the structure by measuring the residual strain. The system works very well and it is expected that it can be used for a real-time strain, temperature and vibration detector of smart structure.