Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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TEM/AES Analysis of AlGaAs/gaAs Quantum Well Structures Grown by LP-MOCVD

저압MOCVD법에 의하여 성장한 AlGaAs/GaAs. 양자우물구조의 TEM/AES분석

  • 김광일 (산업과학기술연구소 전자전기 연구분야) ;
  • 정욱진 (산업과학기술연구소 전자전기 연구분야) ;
  • 배영호 (산업과학기술연구소 전자전기 연구분야) ;
  • 김재남 (산업과학기술연구소 분석실) ;
  • 정동호 (포항대학교 전자전기공학과) ;
  • 정윤하 (포항대학교 전자전기공학과)
  • Published : 1990.05.01
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Abstract

Transmission electron microscopy (TEM) and anger electron microscopy(AES) studies of GaAs/AlxGa1-xAs(x=0.58) quantum wells grown by low pressure metalorganic chemical vapor deposition(LP-MOCVD) are carried out. Isolated quantum well structure having the well width as small as 15 \ulcornerand multiquantum well structure, which consisted of 51 alternating layers with each thickness of 10\ulcorner were suscessfully grown. TEM analyses have shown that their interfaces were almost completely coherent without any structural disorder, alloy clustering and crystal defect. AES depth resolution have shown the compositional periodicity of superlattice structure.

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