• ETRI Journal
• /
• 제21권3호
• /
• pp.41-48
• /
• 1999

We have calculated differential reflection coefficient for isolated well structure of micro-scale, etched on dielectric surface. The differential reflection coefficient is computed using Green's second integral theorem. The purpose of our computation is to find a class of well profiles which give maximal diffusive scattering. To have such a maximal effect, we have concluded that the waist radius of Gaussian beam and its wavelength should be comparable to the well width and that well depth has to be larger than a wavelength. Exact calculation of differential reflection coefficients of dielectric surface with isolated structure on it may be used for the examination of dielectric surfaces and also in making simple but efficient diffuser.

• Nuclear Engineering and Technology
• /
• 제53권4호
• /
• pp.1284-1288
• /
• 2021

In this work, we propose and design a GaN-based diode with a p-doped GaN (p-GaN) multi-well structure for high efficiency betavoltaic (BV) cells. The short-circuit current density (J_SC) and opencircuit voltage (V_OC) of the devices were investigated with variations of parameters such as the doping concentration, height, width of the p-GaN well region, well-to-well gap, and number of well regions. The J_SC of the device was significantly improved by a wider depletion area, which was obtained by applying the multi-well structure. The optimized device achieved a higher output power density by 8.6% than that of the conventional diode due to the enhancement of J_SC. The proposed device structure showed a high potential for a high efficiency BV cell candidate.

• 한국전기전자재료학회논문지
• /
• 제20권5호
• /
• pp.471-477
• /
• 2007

SCBF(Spherically Convergent Beam Fusion) device has been studied as a neutron source. Neutron production rate is a most important factor for the application of SCBF device and is proportional to the square of the ion current[1]. It is regarded generally that some correlations between the potential well structure and the ion current exist. In this paper, the ion current and potential distribution were calculated in a variety of grid cathode geometries using FEM-FCT method. Single potential well structure was certified inside the grid cathode. The deeper the potential well became, the higher the ion current due to the high electric field near the grid cathode became.

• 한국전기전자재료학회논문지
• /
• 제24권1호
• /
• pp.1-6
• /
• 2011

Optical gain characteristics of $1.3{\mu}m$ type-II GaAsSb/InGaNAs/GaAs trilayer quantum well structures were studied using multi-band effective mass theory. The results were compared with those of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structures. In the case of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure, the energy difference between the first two subbands in the valence band is smaller than that of $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. Also, $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure shows larger optical gain than $1.3{\mu}m$ GaAsSb/InGaNAs/GaAs trilayer quantum well structure. This means that GaAsSb/InGaNAs/GaAs system is promising as long-wavelength optoelectronic devices for optical communication.

• 전자공학회논문지D
• /
• 제35D권9호
• /
• pp.54-61
• /
• 1998

Deep submicron급 CMOS디바이스에서 래치업 면역특성을 향상시키기 위한 새로운 Triple well구조를 제안하였다. Triple well에서 이온주입 에너지와 도즈량 변화에 따른 최적인 래치업 면역을 위한 공정조건을 확립하고 이것을 기존의 Twin well구조와 비교분석하였다. 공정은 공정시뮬레이터인 ATHENA로 소자를 제작하여 도핑프로파일과 구조를 해석하고 래치업 특성은 소자시뮬레이터인 ATLAS를 사용하였다. Triple well과 Twin well의 구조에서 공정상의 차이가 도핑프로파일에 미치는 영향과 프로파일 형태가 래치업 특성에 미치는 영향을 규명하였다. Triple well구조에서 p-well이온주입에너지 2.5MeV, 도즈량 1×10/sup 14/[cm/sup -2/]일 때 트리거 전류가 2.5[mA/${\mu}{m}$]로 매우 큰 래치업 면역특성을 얻었다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
• /
• pp.196-199
• /
• 2009

We report the multiple quantum well (MQW) structure for highly efficient red phosphorescent OLEDs. Various triplet quantum well devices from a single well to five quantum wells are realized using a wide band-gap hole and electron transporting layers, narrow band-gap host and dopant material, and charge control layers (CCL). The maximum external quantum efficiency of 14.8 % with a two quantum well device structure is obtained, which is the highest value among the red phosphorescent OLEDs using same dopant.

• 대한가정학회지
• /
• 제42권12호
• /
• pp.15-29
• /
• 2004

Since the 1990s there have been increasing concerns about coresident grandparents and their children in the U.S. This study focused on the coresident grandparents and grandchildren, categorized into 6 household structures, and examined whether household structure with sociodemographic variables affected economic well-being. The data from the University of Michigan Health and Retirement Study (HRS) were used, and frequencies, $x^2$ tests, ANOVA, and logistic regression analysis were conducted by SPSS Windows. The results of the study showed that there was a significant difference in the yearly household income among the 6 household structures. In addition, household structure affected the economic well-being. Especially, grandchildren in grandmother only, some parents present families, and in grandmother only, no parent families were more likely to be poor than those in both grandparents.

• 한국지진공학회:학술대회논문집
• /
• 한국지진공학회 1999년도 추계 학술발표회 논문집 Proceedings of EESK Conference-Fall
• /
• pp.83-90
• /
• 1999

This paper presents a method of seismic analysis for a cylindrical liquid storage structure on horizontally layered half-space considering the effects of the interior fluid and exterior soil medium in the frequency domain. the horizontal and rocking motions of the structures are included in this study. The fluid motion is expressed in terms of analytical velocity potential function which can be obtained by solving the boundary value problem including the sloshing behavior of the fluid as well as deformed configuration of the structure. The effect of the fluid is included in the equation of motion as the impulsive added mass and a frequency-dependent convective added mass along the nodes on the wetted boundary with structure. The soil medium is presented using the 3-D axisymmetric finite elements and dynamic infinite elements. The present method can be applied to the structures embedded in ground as well as on ground since it models the soil medium directly as well as the structure. For the purpose of vertification dynamci characteristics of a tank on homogeneous half-space is analyzed. Comparison of the present results with those by others shows good agreement.

• 가족자원경영과 정책
• /
• 제10권4호
• /
• pp.87-107
• /
• 2006

A study of 117 Korean immigrant women who had husband and(or) children in Hawaii found the relation between social networks and psychological well-being. Social networks composed supporters, support structure, and support contents. Psychological well-being examined family life satisfaction, family life stability, and women's psychological health. Results showed as followed. First, the choice of immigration place among Korean immigrant women and her family based on other family members and friends lived in there. Second, her supporters were family and relatives, Korean friends, foreign friends, religions, belonged organizations and groups, public agencies in Hawaii, and mass-media. The best supporters of them was family and relatives and they mostly provided mental health to Korean immigrant women. Family, Korean friends, foreign friends, and religions tended to support emotional assistance. Third, the level of psychological well-being was higher. Her level of psychological health was higher than the others. Fourth, the best predictors of psychological well-being were child existence, occupation, and immigration duration. Fifth, psychological well-being significantly distinguished different relations of supporters from support structure of social network. The number and support duration with foreign friends supporter and the support duration and the level of perceived useful support content highly related with psychological well-being.

• Transactions on Electrical and Electronic Materials
• /
• 제10권2호
• /
• pp.40-43
• /
• 2009

The authors fabricated a nanopatterned surface on a GaN thin film deposited on a sapphire substrate and used that as an epitaxial wafer on which to grow an InGaN/GaN multi-quantum well structure with metal-organic chemical vapor deposition. The deposited GaN epitaxial surface has a two-dimensional photonic crystal structure with a hexagonal lattice of 230 nm. The grown structure on the nano-surface shows a Raman shift of the transverse optical phonon mode to $569.5\;cm^{-1}$, which implies a compressive stress of 0.5 GPa. However, the regrown thin film without the nano-surface shows a free standing mode of $567.6\;cm^{-1}$, implying no stress. The nanohole surface better preserves the strain energy for pseudo-morphic crystal growth than does a flat plane.