• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.3
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• pp.345-351
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• 2000

In this paper, we design and analyze a Ka-band microstrip line to rectangular waveguide transition using the expanding-cell FDTD method. The transition under investigation consists of a ridged waveguide, microstrip line, and $\lambda$/4 Chebyshev impedance transformer. To improve the accuracyand efficiency, the expanding-cell FDTD method is applied to analyze the characteristics of a ridged waveguide impedance transformer. To verify the accuracy of the expanding-cell FDTD method, S parameters of the analyzed transition are compared with those of experimental data. The efficiency of the present approach is verified by comparing the computational time for expanding-cell and that for fine cell. The relation between the number of step and operation bandwidth is analyzed by comparing the characteristics of four and three step Chebyshev waveguide impedance transformer.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.23 no.4
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• pp.29-34
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• 2023

A clear and efficient design method for a microstrip-to-waveguide inline transition, which is based on an analytical model, is presented. The transition consists of three parts: a microstrip-to-SIW transition, a dielectric-loaded waveguide with substrate-height, and a stepped-height waveguide. The shape of the transitional structure is formed for impedance matching. Two equivalent type0s of dielectric-loaded transitional structures are proposed. The design method is applicable to any size of the waveguide, but a design method of two Ka-band transitions is demonstrated. The proposed transitions, in a back-to-back configuration, have less than 1.2 dB insertion loss and more than 15 dB return loss from 29.8 GHz to 38.2 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.10B
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• pp.1701-1706
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• 2000

In this work a 38 GHz hybrid 2-stage power amplifier module using GaAs pHEMTs and waveguide to microstrip transitions has been successfully developed. A 10 mil thickness duroid substrate was use for fabrication of the power amplifier and the waveguide to microstrip transitions. The fabricated waveguide to microstrip transition showed about 1 dB insertion loss(back to back) at 32-40 GHz. The measured results of power amplifier module showed 29 dBm output power(P1.5dB), 7,2 dB associated gain and 11.2% power-added efficiency(PAE) at 36.8-38.5 GHz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.30 no.2
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• pp.95-103
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• 2019

In this paper, we present a microstrip-to-substrate integrated waveguide(SIW) transition and microstrip-to-hollow SIW(HSIW) transition for Ku-band satellite communication systems. For the complete utilization of the HSIW, a structure filled with air instead of a dielectric material, a microstrip-to-HSIW transition is designed, fabricated, and compared with a microstrip-to-SIW transition. A back-to-back microstrip-to-SIW transition is measured in the range 12~18 GHz; it exhibits a return loss ${\geq}20dB$ and an insertion loss of $1.5{\pm}0.2dB$. In contrast, a back-to-back microstrip-to-HSIW transition exhibits a return loss of at least 15 dB and an insertion loss of $0.55{\pm}0.2dB$ in the same frequency range.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.10-15
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• 2015

A thin-film transmission line (TFTL) employing a microstrip line/coplanar waveguide (ML/CPW) was fabricated on a silicon substrate for application to a miniaturized on-chip RF component, and the RF characteristics of the device with the proposed structure were investigated. The TFTL employing a ML/CPW composite structure exhibited a shorter wavelength than that of a conventional coplanar waveguide and that of a thin-film microstrip line. When the TFTL with the proposed structure was fabricated to have a length of ${\lambda}/8$, it showed a loss of less than 1.12 dB at up to 30 GHz. The improvement in the periodic capacitance of the TFTL caused for the propagation constant, ${\beta}$, and the effective permittivity, ${\varepsilon}_{eff}$, to have values higher than those of a device with only a conventional coplanar waveguide and a thin film microstrip line. The TFTL with the proposed structure showed a ${\beta}$ of 0.53~2.96 rad/mm and an ${\varepsilon}_{eff}$ of 22.3~25.3 when operating from 5 to 30 GHz. A highly miniaturized impedance transformer was fabricated on a silicon substrate using the proposed TFTL for application to a low-impedance transformation for broadband. The size of the impedance transformer was 0.01 mm2, which is only 1.04% of the size of a transformer fabricated using a conventional coplanar waveguide on a silicon substrate. The impedance transformer showed excellent RF performance for broadband.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.12
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• pp.8-13
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• 1997

In this paper, the input impedance and efficiency of rectangulr microstip patch antenna located inside a rectangular wavegudie is calculated by using the cavity model and the mode excited by te patch antenna which is modeled as an equivanlent surface magnetic current on the conducting plate. Measured return losses of a rectangular microstrip patch antenna tuned at 5.93 GHz in the free space and inside the retangular waveguide are compared and found to be in good agreement with calculated results.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.10 no.6
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• pp.335-342
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• 1985

A planar waveguide model is presented for calculating dispersion characteristics with the frequency dependent effective dielectric constant in microstrip lines and results are compared by the variation of each parameter. It is compared to use a wide range of relative dielectric constants and the strip $h_{width}$strate height, W/h ratios, 0.9$\leq$W/h$\leq$2. As the result of a computer simulation, the normalized phase velocity using a planar waveguide model for each case is more closely approached to 1/$\sqrt{\epsilon_r}$ as the increasing of the frequency than the other method that has already been presented.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.23 no.7
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• pp.1770-1776
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• 1998

This paper presents a waveguide-to-mircostrip transition at Ka-band using antipodal finlines. Critical design parameters were identified with the help of theoretical analysis. Experimental optimization was performed together with 3-D FEM analysis in an effort to find optimum dimensions of the transition. In addition to the conventional antipodal finline transition, a new dielectric impedance transformer was introduced to further reduce the insertion loss. Optimized waveguide-to-microstrip transition showed an insertion loss of 0.3~0.4dB/transition at Ka-band. This transition provides superior reproducibility and better performance than conventional coaxcable-to-microstrip transition.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.8
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• pp.701-708
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• 2016

A new design for an ultra-wideband microstrip-to-FGCPW(Finite Ground Coplanar Waveguide) transition is presented. The proposed transition provides the electric field and impedance matching between adjacent transmission lines by ground shaping. The transition is designed on the analytical expressions of whole transitional structure. Conformal mapping is applied to obtain the characteristic impedance of FGCPW with bottom aperture within 3.3 % accuracy as compared with the EM-simulation results. As design example, the fabricated transition in back-to-back configuration provides insertion loss less than 1 dB per transition and return loss better than 10 dB for frequencies from 9 GHz to over 40 GHz.

• Journal of Korea Society of Industrial Information Systems
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• v.20 no.1
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• pp.43-47
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• 2015

In this work, a broadband microstrip (MSL) - to - waveguide (WR12) transition has been presented for millimeter-wave module applications. For improvement of a bandwidth, the radial MSL electrical-probe is designed on the low-loss organic dielectric substrate. The designed and tested characteristics of the proposed transition are characterized in terms of an insertion and return loss. Considering the loss contribution of the cable adapter and waveguide transition for the measurement, the proposed transition loss can be analyzed as -1.88 and -2.01 dB per a transition at 70 and 80 GHz, respectively. The bandwidth of the proposed transition for reflection at -10 dB is 26 GHz at all test frequencies from 67 to 95 GHz. Compared to the state-of-the-art results, improvement of 8.3 % is achieved for the operation bandwidth.