• Tribology and Lubricants
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• 제28권6호
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• pp.272-277
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• 2012

Finite element analysis was carried out using wafer-scale and particle-scale models to understand the mechanism of the fast removal rate(edge effect) at wafer edges in the chemical-mechanical polishing process. This is the first to report that a particle-scale model can explain the edge effect well in terms of stress distribution and magnitude. The results also revealed that the mechanism could not be fully understood by using the wafer-scale model, which has been used in many previous studies. The wafer-scale model neither gives the stress magnitude that is sufficient to remove material nor indicates the coincidence between the stress distribution and the removal rate along a wafer surface.

• 한국정밀공학회지
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• 제20권2호
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• pp.218-225
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• 2003

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. However, inferior goods may be made under the influence of several parameters in dicing process such as blade, wafer, cutting water and cutting conditions. Moreover we can not apply this dicing method to a GaN wafer, because the GaN wafer is harder than other wafers such as SiO$_2$, GaAs, GaAsP, and AlGaAs. In order to overcome this problem, development of a new dicing process and determination of dicing parameters are necessary. This paper describes determination of several parameters - scribing depth, scribing force, scriber inclined angle, scribing speed, and factor for scriber replacement - for a new dicing machine using a scriber.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1082-1086
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• 2004

In silicon wafer manufacturing process, the grinding process has been adopted to improve the flatness of wafer. The grinding of wafer is usually used by the infeed grinding machine. The infeed grinding machine has been depended on imports. Therefore, it is necessary to develop the infeed grinding machine because the demand of the infeed grinding machine is increasing more and more. This paper describes the technologies of infeed grinding machine and intend to introduce the studies in the development of the intelligent grinding system for grinding of wafer. The air bearing spindle for the infeed grinding machine was developed by domestic technologies and the grinding part design of the intelligent grinding system for wafer grinding was completed.

• 마이크로전자및패키징학회지
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• 제19권2호
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• pp.29-33
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• 2012

The demand for 3D wafer level integration has been increasing significantly. Although many technical challenges of wafer stacking are still remaining, wafer stacking is a key technology for 3D integration due to a high volume manufacturing, smaller package size, low cost, and no need for known good die. Among several new process techniques Cu-to-Cu wafer bonding is the key process to be optimized for the high density and high performance IC manufacturing. In this study two main challenges for Cu-to-Cu wafer bonding were evaluated: misalignment and bond quality of bonded wafers. It is demonstrated that the misalignment in a bonded wafer was mainly due to a physical movement of spacer removal step and the bond quality was significantly dependent on Cu bump dishing and oxide erosion by Cu CMP.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1989년도 한국자동제어학술회의논문집; Seoul, Korea; 27-28 Oct. 1989
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• pp.421-426
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• 1989

Many of semiconductor manufacturing companies persuit automation of wafer fabrication to improve the yields and quality of their products. Development of real-time control system for wafer fabrication and wafer/cassette automatic transfer-system is the most important part to achieve the purpose. In this paper, SECS protocol proposed by SEMI is briefly reviewed and an implementation method of real-time monitoring and control system is suggested as one of the possible ways for wafer fabrication automation. The system consists of process equipments supporting SECS.

• 대한기계학회논문집
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• 제17권9호
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• pp.2315-2328
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• 1993

The turbulence effect of particle deposition on a horizontal free-standing wafer in a vertical flow has been studied numerically by using the low-Reynolds-number k-.epsilon. turbulence model. For both the upper and lower surfaces of the wafer, predictions are made of the averaged particle deposition velocity and its radial distribution. Thus, it is now possible to obtain local information about the particle deposition on a free-standing wafer. The present result indicates that the particle deposition velocity on the lower surface of wafer is comparable to that on the upper one in the diffusion controlled deposition region in which the particle sizes are smaller than $0.1{\mu}m$. And it is found in this region that, compared to the laminar flow case, the averaged deposition velocity under the turbulent flow is about two times higher, and also that the local deposition velocity at the center of wafer is high equivalent to that the wafer edge.

• 반도체디스플레이기술학회지
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• 제12권4호
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• pp.39-44
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• 2013

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.

• 반도체디스플레이기술학회지
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• 제18권3호
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• pp.82-87
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• 2019

One of the most critical aspects of the semiconductor industry is the quality of the wafer surface. And the vibrations of wafer grinder are supposed to be the most dominant factors to damage the wafer surface quality. In this study, structure of a wafer grinder has been analyzed through experiments and computer simulations to figure out the main reasons of the vibrations. And the design alterations based on the analysis were applied to identify the effects of those alterations on the vibration suppression. The result shows that the design alterations can effectively suppress about 90% of the vibrations.

• 한국산학기술학회논문지
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• 제22권1호
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• pp.321-326
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• 2021

본 연구는 웨이퍼를 적재할 때 웨이퍼의 손상을 최소화 시키기 위한 기술이다. 반도체와 솔라셀에 이용되는 두께가 얇은 웨이퍼는 적재된 웨이퍼 사이의 표면 장력에 의해 웨이퍼의 분리를 어렵게 만들어 웨이퍼의 표면에 손상을 줄 수 있다. 이러한 웨이퍼의 손상을 최소화시키는 기술은 압축 공기를 웨이퍼 쪽으로 분사하고, 미소의 수평 이동 기구를 동시에 적용하는 것이다. 연구에 사용된 주요 실험 인자는 웨이퍼의 공급 속도, 압축 공기의 노즐 압력, 그리고 흡착 헤드의 흡착 시간이다. 실험 결과, 동일한 노즐 압력에서 웨이퍼의 공급 속도가 빠를수록 파손율이 증가하고, 동일한 공급 속도에서는 노즐 압력이 낮을수록 파손율이 증가한다. 그리고, 웨이퍼를 흡착시키데 필요한 시간은 어느 수준 이상이면 웨이퍼의 공급 속도에 따른 파손율에는 큰 영향을 미치지 않는다. 본 연구의 실험 범위 안에서 최적의 실험 조건은 웨이퍼의 공급 속도 600 ea/hr, 압축 공기의 노즐 압력 0.55 MPa, 흡착 헤드의 흡착 시간 0.9 sec 이다. 또한, 반복성능 실험을 통해 개선된 기술은 웨이퍼의 파손율을 최소화시킬 수 있음을 보여 주었다.

• 대한기계학회논문집B
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• 제30권4호
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• pp.306-313
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• 2006

Automated material handling system is being used as a method to reduce manufacturing cost in the semiconductor and flat panel displays (FPDs) manufacturing process. Those are considering switch-over from the traditional cassette system to single-substrate transfer system to reduce raw materials of stocks in the processing line. In the present study, the wafer transportation speed has been evaluated by numerical and experimental method for three propulsion nozzle array (face, front, rear) in an air levitation system. Test facility for 300 mm wafer was equipped with two control tracks and a transfer track of 1,500mm length. The diameter of propulsion nozzle is 0.8mm and air velocity of wafer propulsion is $50\sim150m/s$. We found that the experimental results of the wafer transportation speed were well agreed with the numerical ones. Namely, the predicted values of the maximum wafer transportation speed are higher than those values of experimental data by 16% and the numerical result of the mean wafer transportation speed is higher than the experimental result within 20%.