• Journal of the Korean Society for Precision Engineering
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• v.20 no.1
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• pp.85-90
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• 2003

Removal rate and Within Wafer Non-Uniformity (WIWNU), the most critical issues in Chemical Mechanical Polish (CMP) process, are related to the pressure distribution, wafer shape, slurry flow, mechanical property of pad and etc. Among them, wafer warp generated by other various manufacturing process of wafer may induce the deviation of pressure distribution on the backside of wafer. In the convex shaped wafer the pressure onto the backside of wafer is higher than that of perfectly flat shaped wafer. Besides, such an added pressure is in proportion to the curvature of wafer. That is, the bigger the curvature of wafer becomes the higher the removal rate goes. And the WIWNU is known to be directly related to the pressure distribution on the wafer as well. In other words, the deviation of pressure distribution is in proportion to the WIWNU. In this paper, it is found that the wafer shape may be modified through heating the backside of it and thus properly changed pressure onto the backside of it may improve the WIWNU.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.10
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• pp.68-76
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• 1997

In this paper, design parameters of rapid thermal processing(RTP) to minimize the wafer temperature uniformity errors are proposed. Lamp ring positions and the wafer height are important parameters for wafer temperature uniformity in RTP. We propose the method to seek lamp ring positions and the wafer gheight for optimal temperature uniformity. The proposed method is applied to seek optimal lamp ring positions and the wafer feight of 8 inch wafer. To seek the optimal lamp ring positions and the wafer height, we vary lamp ring positions and the wafer height and then formulate the wafer temperature uniformity problem to the linear programming problem. Finally, it is shown that the wafer temperature uniformity in RTP designed by optimal problem. Finally, it is hsown that the wafer temperature uniformity is RTP designed by optimal parameters is improved to comparing with RTP designed by the other method.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.222-222
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• 2000

The general dicing process cuts a semiconductor wafer to lengthwise and crosswise direction by using a rotating circular diamond blade. But inferior goods are made under the influence of several parameters in dicing such as blade, wafer, cutting water and cutting conditions. Moreover we can not applicable this dicing method to GaN wafer, because the GaN wafer is harder than the other wafer as GaAs. In older to overcome this problem, a new dicing process is necessary. This paper describes a new machine using scriber and precision servo mechanism in order to dice a semiconductor wafer.

• Journal of the Semiconductor & Display Technology
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• v.13 no.1
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• pp.13-17
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• 2014

Since the semiconductor manufacturing requires the silicon wafers with extraordinary degree of surface flatness, the surface polishing of wafers from ingot cutting is an important process for deciding surface quality of wafers. The present study introduces the development of wafer polishing equipment and, especially, the wafer polishing head that employs the forced self-driving of installed silicon wafer as well as the wax wafer mounting technique. A series of wafer polishing tests have been carried out to investigate the effects of self-driving function in wafer polishing head. The test results for wafer planarization showed that the LLS counts and SBIR of polished wafer surfaces were generally improved by adopting the self-driven polishing head in wafer polishing stations.

• Journal of Institute of Control, Robotics and Systems
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• v.8 no.9
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• pp.812-817
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• 2002

This paper presents a development of high accuracy aligner and describes a method to find the orientation of a substantially circular disk shaped wafer with at least one flat region on an edge thereof. In the developed system, the wafer is spun one 360 degree turn on a chuck and the edge position is measured by a linear array to obtain a set of data points at various wafer orientation. The rotation axis may differ from wafer center by an unknown eccentricity. The flat angle is found by fitting a cosine curve to the actual data to obtain a deviation. The maximum deviation is then corrected for errors due to a finite number of data points and wafer eccentricity by calculating an adjustment angle from data points on the wafer fiat. After determining the flat angle the wafer is spun to the desired orientation. The wafer eccentricity can be calculated from four of the data points located away from the flat edge region. and the wafer is then centered.

• Journal of the Semiconductor & Display Technology
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• v.9 no.1
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• pp.23-28
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• 2010

In this paper, wafer drop from wafer guide mechanism, which is one of the serious problems in water transfer robot, is analyzed, and new wafer guide mechanisms are proposed to minimize this drop. Three types of new wafer guide mechanisms are proposed: roller type, gear type and L-shape rocker type. We choose one of the proposed mechanism, which is roller type, and verified this mechanism through real transfer experiment. Wafer picking up test is conducted with initial aligning error for simulating the wafer drop. Number of drop is compared between conventional mechanism and proposed mechanism. As a result, we can find the proposed mechanism can reduce the number of wafer drop dramatically.

• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.161-161
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• 2000

The clean mobile robot for wafer transfer is AGV that carry each wafer to each equipment. It has wafer handling technology, wafer ID recognition technology, position calibration technology using vision system, and anti-vibration technology. Wafer loading/unloading working accuracy is within ${\pm}$1mm, ${\pm}$3$^{\circ}$. By application of this AGV, we can reduce the manufacturing tack time and bring cost down of equipment.

• Journal of the Semiconductor & Display Technology
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• v.21 no.1
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• pp.142-147
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• 2022

After introducing Hybrid Bonding technology into image sensors using stacked sensors and image processors, large quantity production became possible. As a result, it is currently used in most of the CMOS image market in smartphones and other image-based devices worldwide, and almost all stacked CIS manufacturing sites have focused on miniaturization using hybrid bonding. In this study, an upper wafer handling module for Wafer to Wafer Hybrid Bonding developed to increase the alignment and precision between wafers when wafer bonding. The module was divided two parts to reduce error of both the alignment and degree of precision during wafer bonding. Wafer handling module developed both new Tip/Tilt system controlling θx,θy of upper wafer and striker to push upper wafer. Based on this, it was confirmed through the stability evaluation that the upper wafer handling module can be controlled without any problem during W2W hybrid bonding.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.47-51
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• 2010

This paper presents a wafer pre-alignment system which is improved using the image of the entire wafer area. In the previous method, image acquisition for wafer takes about 80% of total pre-alignment time. The proposed system uses only one image of entire wafer area via a high-resolution CMOS camera, and so image acquisition accounts for nearly 1% of total process time. The larger FOV(field of view) to use the image of the entire wafer area worsen camera lens distortion. A camera calibration using high order polynomials is used for accurate lens distortion correction. And template matching is used to find a correct notch's position. The performance of the proposed system was demonstrated by experiments of wafer center alignment and notch alignment.

• Journal of Institute of Control, Robotics and Systems
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• v.8 no.5
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• pp.419-424
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• 2002

After the patterning and probe process of wafer have been achieved, the dicing processing is necessary to separate chips from a wafer. The dicing process cuts a semiconductor wafer to lengthwise and crosswise directions to make many chips. The existing general dicing method is the mechanical cutting using a narrow circular rotating blade impregnated diamond particles or laser cutting. Inferior goods can be made by the mechanical or laser cutting unless several parameters such as blade, wafer, cutting water and cutting conditions are properly set. Moreover, we can not apply these general dicing method to that of GaN wafer, because the GaN wafer is harder than general semiconductor wafers such as GaAs, GaAsP, AIGaAs and so forth. In order to overcome these problems, this paper describes a new wafer dicing method using fixed diamond scriber and precision servo mechanism.