• 한국정밀공학회지
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• 제23권9호
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• pp.174-178
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• 2006

Pyramid shape of micro pattern is applied to the light guide panel (LGP) to enhance the uniformity of the brightness of the LCD. The micro pyramids are molded in intaglio on the surface of the LGP. The size of each pyramid is 5$\mu$m $\times$ 5$\mu$m on bottom and the height is about 3.5$\mu$m. The pyramids are distributed on the LGP surface randomly to be sparser where the light comes in and denser at the opposite side as a result of a simulation using lightools$^{TM}$ Based on this design, a silicon pattern master and a nickel stamper are fabricated by MEMS process and electro plating process. Intaglio micro pyramids are fabricated on the 6' of silicon wafer from the anisotropic etching using KOH and the process time, temperature of the KOH solution, etc are optimized to obtain precise shape of the pattern. A Wi stamper is fabricated from this pattern master by electro plating process and the embossed pyramid patterns turns out to be well defined on the stamper. Adopting this stamper to the mold base with two cavities, 1.8' and 3.6' LGPs are injection molded.

• 대한기계학회논문집B
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• 제37권9호
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• pp.823-828
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• 2013

실리콘 태양전지의 두께를 줄일 경우 여러 문제점이 발생하게 되는데 그 중에서 태양전지의 휨 현상은 제품 수율의 직접적인 원인이 되어 제품 상용화에 가장 큰 걸림돌이 되고 있다. 본 연구에서는 태양전지의 실리콘 웨이퍼 두께를 가변하였을 때의 휨 정도에 대해 정밀하게 측정하고자 하였다. 측정결과의 신뢰성을 높이고 비 대칭성 형상에 대해 자세하고 정밀하게 분석하기 위해 3D 이미지 스캐너를 사용하였다. 그 결과 실리콘 웨이퍼의 두께가 감소할수록 휨 정도는 급격하게 증가하고 곡률 또한 증가하는 것을 확인할 수 있었다. 실리콘 웨이퍼의 두께가 감소할 수록 휨 정도의 편차가 증가하여 형상의 비 대칭성이 증가하는 것 또한 확인되었다. 또한 Ag 전극의 부착이 휨 현상을 어느 정도 감소시키는 것을 알 수 있었다.

• Journal of Advanced Marine Engineering and Technology
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• 제25권3호
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• pp.631-635
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• 2001

The major problems associated with the manufacturing processes of the microaccelerometer based on the tunneling current concept is the residual stress. This paper deals with finite element analysis of residual stress causing pop up phenomenon which are induced in micromachining processes for a microaccelerometers sensor using silicon on insulator(SOI) wafer. After heating the tunnel gap up to $100^{\circ}C$and get it through cooling process and the additional beam up to $80^{\circ}C$get it through the cooling process. We learn the residual stress of each shape and compare the results with each other, after heating the tunnel gap up to $400^{\circ}Cduring$ the Pt deposition process. The equivalent stresses produced during the heating process of focused ion beam(FIB) cut was also to be about $0.02~0.25Pa/^{\circ}C$and cooling process the gradient of residual stresses of about $8.4\{times}10^2Pa/{\mu}m$ still at cantilever beam and connected part of paddle. We want to seek after the real cause of this pop up phenomenon and diminish this by change manufacturing processes of microaccelerometer sensors.

• 한국표면공학회지
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• 제33권2호
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• pp.101-106
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• 2000

SOI (Silicon-On-Insulator) substrates were fabricated with varying annealing temperature of $25-660^{\circ}C$ by a linear annealing method, which was modified RTA process using a linear shape heat source. The annealing method was applied to Si ∥ $SiO_2$/Si pair pre-contacted at room temperature after wet cleaning process. The bonding strength of SOI substrates was measured by two methods of Razor-blade crack opening and direct tensile test. The fractured surfaces after direct tensile test were also investigated by the optical microscope as well as $\alpha$-STEP gauge. The interface bonding energy was 1140mJ/m$^2$ at the annealing temperature of $430^{\circ}C$. The fracture strength was about 21MPa at the temperature of $430^{\circ}C$. These mechanical properties were not reported with the conventional furnace annealing or rapid thermal annealing method at the temperature below $500^{\circ}C$. Our results imply that the bonded wafer pair could endure CMP (Chemo-Mechanical Polishing) or Lapping process without debonding, fracture or dopant redistribution.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1198-1201
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• 2005

A new foxtail actuator driven by V-shape beam deflection using electrostatic force has been designed, fabricated and characterized for nano-resolution manipulators. The proposed foxtail mechanism was implemented using a pair of electrostatic actuators and a pair of holding actuators, which was analyzed based on the electromechanically coupled motion of voltage - displacement relation. The proposed actuator was fabricated onto Silicon-on-Insulator (SOI) wafer and its stepping characteristics were measured by micro optical interferometer consisting of integrated micromirror and optical fiber. The fabricated foxtail microactuator was successfully operated from 1nm to 76nm, and the magnitude of step displacement was controllable up from 26nm/cycles to 53nm/cycle by changing the voltage.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.239-239
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• 2003

As a result of the recent miniaturization and enhancement in the performance of thin film inductors and thin film transformers, there are increased demands for the thin films with a high magnetic permeability in the high frequency range, a high saturation magnetization, a high electrical resistivity, and a low coercive force. In order to improve high frequency properties, we will investigate anisotropy field by shape and size of pattern. The Fe-Al-O thin films of 16mm diameter and 1$\mu\textrm{m}$ thickness were deposited on Si wafer, using RE magnetron reactive sputtering technique with the mixture of argon and oxygen gases. The fabricating conditions are obtained in the working partial pressure of 2m Torr, O$_2$ partial Pressure of 5%, Input power of 400w, and Al pellets on an Fe disk with purity of 99.9%. For continuous thin film is the 4Ms of 19.4kG, H$\sub$c/ of 0.6Oe, H$\sub$k/ of 6.0Oe and effective permeability of 2500 up to 100MHz. In this work, we expect to enhanced effect of magnetic anisotropy on patterned of Fe-Al-O thin films.

• 한국전기전자재료학회논문지
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• 제18권9호
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• pp.787-792
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• 2005

Chemical mechanical polishing(CMP) has become the process of choice for modem semiconductor devices to achieve both local and global planarization. CMP is a complex process which depends on numerous variables such as macro, micro and nano-geometry of pad, relative velocity between pad and wafer stiffness and dampening characteristics of pad, slurry, pH, chemical components of slurry, abrasive concentration, abrasive size, abrasive shape, etc. Especially, an oxidizer of chemical components is very important remove a target material in metal CMP process. This paper introduces the effect of oxidizer such as $H_2O_2,\;Fe(NO_3)_3\;and\;KIO_3$ in slurry for tungsten which is used in via or/and plug. Finally the duplex reacting mechanism of $oxidizer(H_2O_2)$ through adding the $catalyst(Fe(NO_3)_3)$ could acquire the sufficient removal rate in tungsten CMP.

• 한국진공학회지
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• 제11권4호
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• pp.249-255
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• 2002

이방성 습식 식각기술을 이용하여 멤버레인을 제작하기 위하여 KOH 용액 및 KOH-IPA 혼합용액을 사용하여 단결정 실리콘 기판을 식각하였다. 단결정 실리콘의 식각속도는 식각 용액의 온도와 농도에 좌우되었으며, 식각 용액의 농도에 따라 식각 형태와 패턴 형성 방향이 달라짐도 관찰되었다. 식각을 위한 표면패턴은 실리콘웨이퍼의 primary flat에 $45^{\circ}$로 기울여 형성되었으며 KOH의 농도가 20 wt%로 유지되었을 때, 식각 용액의 온도 $80^{\circ}C$ 이상에서는 U-groove, $80^{\circ}C$ 이하의 온도에서는 V-groove 식각 형태가 형성되었다. 각 면에 대한 식각속도 차이에 의해서 생기는 hillock은 온도와 농도가 높아짐에 따라 현저하게 줄어들었다.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1283-1288
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• 2004

Metal-ferroelectric-insulator-semiconductor(WFIS) capacitors using rapid thermal annealed LiNbO$_3$/AlN/Si(100) structure were fabricated and demonstrated nonvolatile memory operations. The capacitors on highly doped Si wafer showed hysteresis behavior like a butterfly shape due to the ferroelectric nature of the LiNbO$_3$ films. The typical dielectric constant value of LiNbO$_3$ film in the MFIS device was about 27, The gate leakage current density of the MFIS capacitor was 10$^{-9}$ A/cm$^2$ order at the electric field of 500 kV/cm. The typical measured remnant polarization(2P$_{r}$) and coercive filed(Ec) values were about 1.2 $\mu$C/cm$^2$ and 120 kV/cm, respectively The ferroelectric capacitors showed no polarization degradation up to 10$^{11}$ switching cycles when subjected to symmetric bipolar voltage pulses of 1 MHz. The switching charges degraded only by 10 % of their initial values after 4 days at room temperature.e.

• 한국세라믹학회지
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• 제30권9호
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• pp.695-700
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• 1993

In this study, we prepared Pb-Ti stock solution by sol-gel processing and deposited PbTiO3 thin film on a Pt coated SiO2/Si wafer by spin coating using the stock solution. We used lead acetate trihydrate and titanium isopropoxide. The stock solution was partially hydrolized and finally a 0.25M coating solution was prepared. We achieved spin coating at 4000rpm for 30 seconds and heated the thin film at 375$^{\circ}C$ for 5 minutes and at $600^{\circ}C$ for 5 minutes successively, first and second heating state. And the thin film was finally sintered at 90$0^{\circ}C$ for 1 hour in the air. The upper electrode of the thin film was made by gold sputtering and was cricle shape with radius 0.4mm. Measured dielectric constant, dissipation factor and phase transition temperature(Cuire Temp.) were about 275, 0.02 and 521$^{\circ}C$ respectively. To observe ferroelectric characteristics we calculated Pr(remnant polarization) and Ec(coercive field) byhysteresis curve. Ec was 72kV/cm and Pr was 11.46$\mu$C/$\textrm{cm}^2$.