• Journal of Convergence Korean Medicine
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• v.2 no.1
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• pp.5-12
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• 2021

Objectives: The purpose of this study is to fabricate an ultra-fine ginsenoside particle atomizer that can provide a new treatment method by delivering ginsenoside components that have a therapeutic effect on respiratory diseases directly to the lungs. Methods: We fabricated the AAO vibrating mesh by using the micromachining process. The starting substrate of an AAO wafer has a 350nm pore diameter with 50㎛ thickness. A photomask having several 5㎛ opening holes with a 100㎛ pitch was used to separate each nanopore nozzle. The photoresist structure was optimized to pattern the nozzle area during the lift-off process precisely. The commercial vibrating mesh was removed from OMRON's NE-U100 product, and the fabricated AAO vibrating mesh was installed. A diluted sample of 20mL with 30% red ginseng concentrate was prepared to atomize from the device. Results: As a result of liquid chromatography analysis before spraying the ginsenoside solution, ginsenoside components such as 20S-Rg3, 20R-Rg3, and Rg5 were detected. After spraying through the AAO vibrating mesh, ginsenosides of the same component could be detected. Conclusion: A nutrient solution containing ginsenosides was successfully sprayed through the AAO vibrating mesh with 350 nm selective pores. In particular, during the atomizing experiment of ginsenoside drug solution having excellent efficacy in respiratory diseases, it was confirmed that atomizing through the AAO vibrating mesh while maintaining most of the active ingredients was carried out.

• Journal of the Korea Organic Resources Recycling Association
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• v.31 no.1
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• pp.35-45
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• 2023

In this study, the sludge formation in the wastewater drain from the advanced packaging process mechanisms are revealed as well as the key factors, materials, and sludge prevention methods using surfactant. Compared with that of conventional packaging process, advanced packaging process employ similar process to the semiconductor fabrication process, and thus many processes may generate wastewater. In specific, a large amount of wastewater may generate during the carrier wafer bonding, photo, development, and carrier wafer debonding processes. In order to identify the key factors for the formation of sludge during the advanced packaging process, six types of chemicals including bonding glue, HMDS, photoresist (PR), PR developer, debonding cleaner, and water are utilized and mixing evaluation is assessed. As a result, it is confirmed that the black solid sludge is formed, which is originated by the sludge seed formation by hydrolysis/dehydration reaction of HMDS and sludge growth via hydrophobic-hydrophobic binding with sludge seed and PR. For the sludge prevention investigation, three surfactants of CTAB, PEG, and shampoo are mixed with the key materials of sludge, and it is confirmed that the sludge formations are successfully suppressed. The underlying mechanism behind the sludge formation is that the carbon tails of the surfactant bind to PR with hydrophobic-hydrophobic interaction and inhibit the reaction with HMDS-based slurry seeds to prevent the sludge formation. In this regard, it is expected that various problems like clogging in drains and pipes during the advanced packaging process may effectively solve by the injection of surfactants into the drains.

• Solar Energy
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• v.10 no.3
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• pp.60-65
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• 1990

[ $n^+-p^+$ ] InP homojunction solar cells were fabricated by thermal diffusion of sulphur into a $p^+$-InP wafer($p=4{\times}10^{18}cm^{-3}$), and a SiO film($600{\AA}$ thick) was coated on the $n^+$ layer as an antireflection(AR) coating by an e-beam evaporator. The volume of the cells were $5{\times}5{\times}0.3mm^3$. The front contact grids of the cells with 16 finger pattern of which width and space were $20{\mu}m$ and $300{\mu}m$ respectively, were formed by photo-lithography technique. The junction depth of sulphur were as shallow as about 0.4r m We found out the fabricated solar cells that, with increasing the diffusion time, short circuit current densities($J_{sc}$), series resistances($R_s$) and energy conversion efficiencies(${\eta}$) were increased. The cells show good spectral responses in the region of $5,000-9,000{\AA}$. The short circuit current density, the open circuit voltage( $V_{oc}$), the fill factor(F.F) and the energy conversion efficiency of the cell were $13.16mA/cm^2$, 0.38V, 53.74% and 10.1% respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.12
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• pp.1069-1077
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• 2011

In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• Journal of Sensor Science and Technology
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• v.11 no.6
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• pp.342-349
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• 2002

New formation technique of metal oxide sensing film was proposed m this paper. Silicon wafer with Pt electrodes was used as a substrate for depositing metal Sn film. Metal Sn was deposited in the state of not continuous film but only island state. The samples were prepared to obtain the optimal condition of metal Sn deposition. The resistances of deposited Sn onto Pt electrodes amounted to $1\;k{\Omega}$, $5\;k{\Omega}$, $10\;k{\Omega}$ and $50\;k{\Omega}$, respectively. Also The sample with $1,500\;{\AA}$ thickness of Sn was prepared m order to compare sensing properties between conventional type and proposing type. After deposition of metal Sn, $SnO_2$ was formed by thermal oxidation method for 3 hrs. in $O_2$ ambient at $700^{\circ}C$. Surface morphology, crystal structure and surface roughness of oxidized-sensing film were examined by SEM, XRD, and AFM, respectively. From the results of these analyses, the optimal deposition condition of Sn was that the Pt electrode resistance became $10\;k{\Omega}(300\;{\AA})$. Also, the sensing characteristics of fabricated sensing film for various concentrations of butane, propane and carbon monoxide gases were measured at he operating temperatures of $250^{\circ}C$, $300^{\circ}C$ and $350^{\circ}C$, respectively. Although catalyst as not added to the sensing film, it has exhibited the high sensitivity to all the test gases.

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.4
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• pp.347-353
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• 2002

A structure of a glass electrode-type pH sensor for measuring any concentration of $H^+$ in an aqueous solution was embodied with bulk micromachining technology. Two open well structures were formed, and a reference electrode was secured by the Ag/AgCl thin film in the sloped side of the etched structure. A sensitive membrane of an indicator electrode for generating a potential by an exchange reaction to $H^+$ was made with a glass containing Na 20% or more finely so that its thickness might be $100{\mu}m$ or so, and then it was bonded to one pyramidal structure. A liquid junction for a current path was formed by filling an agar in the anisotropically etched part of the Si wafer, which had a size of $50{\mu}m{\times}50{\mu}m$, and then bonded it to the other. After complete fabrication of each part, it was filled with a 2M KCl reference solution and encapsulated the sensor structure with a cold expoxy. The potential value of fabricated pH sensor was about 90mV/pH in the standard pH solutions.

• Journal of Sensor Science and Technology
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• v.10 no.3
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• pp.148-155
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• 2001

A pressure sensor on the tip of a catheter which is utilized to measure the in-vivo pressure in a human body was fabricated and the characteristic of the pressure sensor as measured. To fit into a catheter with 1 mm caliber, samples of $150\;{\mu}m$(thickness) ${\times}$ (600, 700, 800, 900, 1000) ${\mu}m$(width) ${\times}2\;mm$(length) was fabricated. The thicker face with $450\;{\mu}m$ thickness of SDB wafer was made thin to $134\;{\mu}m$ thickness using KOH etchant and it made possible to fabricate sensor cell with the width shorter than 1 mm. Different to the whitstone bridge sensor, we formed one piezoresistor and one reference resistor in sensor. Therefore there are possibilities of reduction of the sensitivity, then by using the simulation tool ANSYS 5.5.1, the location and the type of the piezoresistor was optimized. Another piezoresistor type of sensor which contain one longitudinal and one transverse piezoresistor was fabricated at the same time, but the sensitivity was not improved very much. To get the output versus the pressure, a constant current source and a implementation amplifier was used. As a result, the maximum sensitivity of the sensor with one piezoresistor was $1.6\;{\mu}V/V/mmHg$.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.65-74
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• 2013

The through-silicon via (TSV) technology is essential for 3-dimensional integrated packaging. TSV technology, however, is still facing several reliability issues including interfacial delamination, crack generation and Cu protrusion. These reliability issues are attributed to themo-mechanical stress mainly caused by a large CTE mismatch between Cu via and surrounding Si. In this study, the thermo-mechanical reliability of copper TSV technology is investigated using numerical analysis. Finite element analysis (FEA) was conducted to analyze three dimensional distribution of the thermal stress and strain near the TSV and the silicon wafer. Several parametric studies were conducted, including the effect of via diameter, via-to-via spacing, and via density on TSV stress. In addition, effects of annealing temperature and via size on Cu protrusion were analyzed. To improve the reliability of the Cu TSV, small diameter via and less via density with proper via-to-via spacing were desirable. To reduce Cu protrusion, smaller via and lower fabrication temperature were recommended. These simulation results will help to understand the thermo-mechanical reliability issues, and provide the design guideline of TSV structure.