• Title/Summary/Keyword: Wafer Bonder

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Development of automatic die bonder system for semiconductor parts assembly (반도체 소자용 자동 die bonding system의 개발)

  • 변증남;오상록;서일홍;유범재;안태영;김재옥
    • 제어로봇시스템학회:학술대회논문집
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    • 1988.10a
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    • pp.353-359
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    • 1988
  • In this paper, the design and implementation of a multi-processor based die bonder machine for the semiconductor will be described. This is a final research results carried out for two years from June, 1986 to July, 1988. The mechanical system consists of three subsystems such as bonding head module, wafer feeding module, and lead frame feeding module. The overall control system consists of the following three subsystems each of which employs a 16 bit microprocessor MC 68000 : (i) supervisory control system, (ii) visual recognition / inspection system and (iii) the display system. Specifically, the supervisory control system supervises the whole sequence of die bonder machine, performs a self-diagnostics while it controls the bonding head module according to the prespecified bonding cycle. The vision system recognizes the die to inspect the die quality and deviation / orientation of a die with respect to a reference position, while it controls the wafer feeding module. Finally, the display system performs a character display, image display ans various error messages to communicate with operator. Lead frame feeding module is controlled by this subsystem. It is reported that the proposed control system were applied to an engineering sample and tested in real-time, and the results are sucessful as an engineering sample phase.

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Development of Uniform Press for Wafer Bonder (웨이퍼 본딩 장비용 Uniform Press 개발)

  • Lee, Chang-Woo;Ha, Tae-Ho;Lee, Jae-Hak;Kim, Seung-Man;Kim, Yong-Jin;Kim, Dong-Hoon
    • Transactions of the KSME C: Technology and Education
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    • v.3 no.4
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    • pp.265-271
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    • 2015
  • The bonding process should be achieved in vacuum environment to avoid air bubble. In this study, we studied about pressure uniformity that became an issue in thermo compression bonding usually. Uniform press is realized by the method that use air spring and metal form spring. The concept of uniform press using air spring is removed except pressing direction in the press processing so angle between the vector of pressure surface and the pressure axis is parallel automatically. Air spring compensate the errors of machining and assembly. Metal form compensate the thermal deformation and flatness error.

Development of 121 pins/mm2 High Density Probe Card using Micro-spring Architecture (마이크로 스프링 구조를 갖는 121 pins/mm2 고밀도 프로브 카드 제작기술)

  • Min, Chul-Hong;Kim, Tae-Seon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.9
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    • pp.749-755
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    • 2007
  • Recently, novel MEMS probe cards can support reliable wafer level chip test with high density probing capacity. However, manufacturing cost and process complexity are crucial weak points for low cost mass production. To overcome these limitations, we have developed micro spring structured MEMS probe card. For fabrication of micro spring module, a wire bonder and electrolytic polished gold wires are used. In this case, stringent tension force control is essential to guarantee the low level contact resistance of micro spring for reliable probing performance. For this, relation between tension force of fabricated probe card and contact resistance is characterized. Compare to conventional probe cards, developed MEMS probe card requires fewer fabrication steps and it can be manufactured with lower cost than other MEMS probe cards. Also, due to the small contact scratch patterns, we expect that it can be applied to bumping types chip test which require higher probing density.

Development of having double-chamber in micro-bubble pump (두 개의 챔버를 갖는 마이크로 버블펌프의 개발)

  • 최종필;박대섭;반준호;김병희;장인배;김헌영
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.1186-1190
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    • 2003
  • In this paper, a valveless bubble-actuated fluid micropump was has been developed and its performance was tested. The valveless micropump consists of the lower plate, the middle plate, the upper plate and a resistive heater. The lower plate includes the nozzle-diffuser elements and the double-chamber. Nozzle-diffuser elements and a double-chamber are fabricated on the silicon wafer by the DRIE(Deep Reactive Ion Etching) process. The lower plate also has inlet/outlet channels for fluid flow. The middle plate is made of glass and plays the role of the diaphragm. The chamber in the upper plate is filled with deionized water, and which contacts with the resistive heater. The resistive heater is patterned on a silicon substrate by Ti/Pt sputtering. Three plates and the resister heater are laminated by the aligner and bonded in the anodic bonder. Since the bubble is evaporated and condensed periodically in the chamber, the fluid flows from inlet to outlet with respect to the diffusion effect. In order to avoid backflow, the double chamber system is introduced. Analytical and experimental results show the validity of the developed double-chamber micropump.

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Direct bonding of Si(100)/Si$_3$N$_4$∥Si (100) wafers using fast linear annealing method (선형열처리를 이용한 Si(100)/Si$_3$N$_4$∥Si (100) 기판쌍의 직접접합)

  • Lee, Young-Min;Song, Oh-Song;Lee, Sang-Hyun
    • Korean Journal of Materials Research
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    • v.11 no.5
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    • pp.427-430
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    • 2001
  • We prepared 10cm-diameter Si(100)/500 $\AA$-Si$_3$N$_4$/Si(100) wafer Pairs adopting 500 $\AA$ -thick Si$_3$N$_4$layer as insulating layer between single crystal Si wafers. Si3N, is superior to conventional SiO$_2$ in insulating. We premated a p-type(100) Si wafer and 500 $\AA$ -thick LPCVD Si$_3$N$_4$∥Si (100) wafer in a class 100 clean room. The cremated wafers are separated in two groups. One group is treated to have hydrophobic surface and the other to have hydrophilic. We employed a FLA(fast linear annealing) bonder to enhance the bond strength of cremated wafers at the scan velocity of 0.1mm/sec with varying the heat input at the range of 400~1125W. We measured bonded area using a infrared camera and bonding strength by the razor blade crack opening method. We used high resolution transmission electron microscopy(HRTEM) to probe cross sectional view of bonded wafers. The bonded area of two groups was about 75%. The bonding strength of samples which have hydrophobic surface increased with heat input up to 1577mJ/$m^2$ However, bonding strength of samples which have hydrophilic surface was above 2000mJ/$m^2$regardless of heat input. The HRTEM results showed that the hydrophilic samples have about 25 $\AA$ -thick SiO layer between Si and Si$_3$N$_4$/Si and that maybe lead to increase of bonding strength.

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