• Title/Summary/Keyword: WSi2

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Characterization of Thin $SiO_2/Si_3N_4$ Film on $WSi_2$ (텅스텐 실리사이드 상의 얇은 $SiO_2/Si_3N_4$ 막의 특성 평가)

  • 구경원;홍봉식
    • Journal of the Korean Vacuum Society
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    • v.1 no.1
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    • pp.183-189
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    • 1992
  • The characteristics of N/O(SiOz/SisN4) film on WSi2 are compared with storage node Poly-Si. Leakage current and breakdown voltage are improved and storage capacitance is decreased. The oxidation rate of WSiz is more rapid than polycrystalline silicon. Thus the thick bottom oxide on the WSiz causes to the decrease of capacitance. The out diffusion of dopant impurity in polycrystalline silicon through the silicide leads to the formation of a depletion region in the polycrystalline silicon and the decrease of depletion capacitance. That results in the decrease of the overall storage capacitance.

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A Study of the mechanism for abnormal oxidation of WSi$_2$ (WSi$_2$이상산화 기구에 대한 조사)

  • 이재갑;김창렬;김우식;이정용;김차연
    • Journal of Surface Science and Engineering
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    • v.27 no.2
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    • pp.83-90
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    • 1994
  • We have investigated the mechanism for the abnormal oxide growth occuring during oxidation of the crystalline tungsten silicide. TEM and XPS analysis reveal the abnormaly grown oxide layer consisting of crystalline $Wo_3$ and amorphous $SiO_2$. The presence of crystalline $Wo_3$ provides a rapid diffusion of oxygen through the oxide layer. The abnormal oxide growth is mainly due to the poor quality of initial oxide layer growth on tungsten silicide. Two species such as tungsten and silicon from decomposition fo tungsten silicide as well as silicon supplied from the underlying polysilicon are the main contributors sto abnormal oxide forma-tion. Consequently, the abnormal oxidation results in the disintegration of tungsten silicide and thinning of polysilicon as well.

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Properties of Extracts from Extruded Root and White Ginseng at Different Conditions (압출성형 공정변수에 따른 건조수삼과 백삼 압출성형물의 침출속도 및 침출물 특성)

  • Kim, Bong-Soo;Ryu, Gi-Hyung
    • Journal of the Korean Society of Food Science and Nutrition
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    • v.34 no.2
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    • pp.306-310
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    • 2005
  • The comparison in release rate constant and properties of extracts from extruded raw ginseng and extruded white ginseng was conducted to apply extrusion process for manufacturing of released ginseng tea bag. Dry raw ginseng and white ginseng powder were extruded at 20∼30% moisture content and 200∼300 rpm by using an experimental twin-screw extruder. Browness and redness (both indicated the releasing of saponin and ginsenosides) were increased with the increase in the screw speed and the decrease of moisture content. Crude saponin and water solubility index (WSI) of both ginseng also share the same behaviour against the level of screw speed and moisture content, as well as browness and redness. The particle size effects of extruded raw ginseng at 20% and 28% moisture content on absorbance of released extract at 260 up to 560 nm, WSI, and water absorption index were determined. While particle size decreased from 800∼1000 nm to 200∼500 nm, absorbance and WSI are decreased. Absorbance and WSI shown increasing level while moisture content was decreased. In conclusion, the formation of pores by expansion and disruption of cell wall in extrusion cooking were obviously responsible to increase the amount of released extract of extruded ginseng and its WSI as well. The extrusion process turns out be the efficient process for manufacturing of commercial ginseng tea product than those of other thermal processes.

Characteristic of PECVD-$WN_x$ Thin Films Deposited on $Si_3N_4$ Substrate ($Si_3N_4$ 기판 위에 PECVD 법으로 형성한 Tungsten Nitride 박막의 특성)

  • Bae, Seong-Chan;Park, Byung-Nam;Son, Seung-Hyun;Lee, Jong-Hyun;Choi, Sie-Young
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.7
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    • pp.17-25
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    • 1999
  • Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.

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고집적 GaAs 디지틀 집접회로 제작을 위한 Self-aligned MESFET 공정

  • Yang, Jeon-Uk;Shim, Kyu-Hwan;Choi, Young-Kyu;Cho, Lack-Hie;Park, Chul-Soon;Lee, Keong-Ho;Lee, Jin-Hee;Cho, Kyoung-Ik;Kang, Jin-Yeong;Lee, Yong-Tak
    • ETRI Journal
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    • v.13 no.4
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    • pp.35-41
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    • 1991
  • 저전력 고집적 GaAs 디지틀 IC에 적합한 기본 논리회로인 DCFL (Direct Coupled FET Logic) 을 구현하기 위한 소자로 WSi게이트 MESFET 공정을 연구하였으며, 이와 함께 TiPtAu 게이트 소자를 제작하였다. MESFET 의 제작은 내열성게이트를 이용한 자기정렬 이온주입 공정을 사용하였으며 주입된 Si 이온은 급속열처리 방법으로 활성화하였다. 또한 제작공정중 저항성 접촉의 형성은 절연막을 이용한 리프트 - 오프 공정을 이용하였다. 제작된 WSi게이트 MESFET은 $1\mum$ 게이트인 경우 222mS/mm의 트랜스컨덕턴스를 나타내어 우수한 동작특성과 집적회로 공정의 적합성을 보였으며 이와 동등한 공정조건으로 제작된 TiPtAu 게이트 MESFET 은 2" 기판 내에서 84mV의 임계전압 변화를 나타내었다.

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Tungsten silicide 의 이상산화

  • 이재갑;김창렬;김준기;나관구;김우식;최민성;이정용
    • Proceedings of the Materials Research Society of Korea Conference
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    • 1993.05a
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    • pp.22-22
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    • 1993
  • Tungsten silicide는 낮은 전도도, 높은 녹는점, pattern 형성에 용이함등으로 VLSI device Interconnect(Bit line)로 활발하게 이용되고 있다. 일반적으로 Tungsten silicide 는 polycide(WSi$_2$/poly-Si)구조로 사용이 되며, polycide 구조는 산화분위기에서 WSi$_2$위에 SiO$_2$막을 쉽게 형성시키는 장점이 있다. As-dep상태의 polycide를 산화시킬적에는 텅스텐 실리사이드에 존재하는 excess-silicon과 microcrystalline 구조 (grain size=3$\AA$)로 인하여 텅스텐 실리사이드 표면에 균일한 SiO$_2$가 형성이 된다. 그러나 post-anneal을 실시한 샘플 Furnace anneal ($N_2$:O$_2$유량비=2:1) 처리하면 성장된 텅스텐 실사이드 입자의 입계효과에 의하여 텅스텐 실리사이드의 표면에 SiO$_2$뿐만 아니라 WO$_3$가 형성되는 이상산화가 발생되어 공정의 어려움을 야기시키고 있다. 본 실험에서는 post anneal ($700^{\circ}C$, 30min, $N_2$ 분위기) 시킨 시편을 Implantation(As 또는 phosphorous)을 실시하여 실리사이드 표면을 비정질화 시킨후 Furnace anneal 실시하여 이상산화 발생 억제에 I/I처리가 미치는 효과를 관찰하였다. XPS를 이용하여 이상산화막 두께와 WO$_3$존재를 조사하였고, AES를 사용하여 W, Si, O 원소들이 깊이에 따라 변하는 것을 관찰하였다.

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Comparison of Quality Analyses of Domestic and Imported Wheat Flour Products Marketed in Korea (시판 중인 우리밀 및 수입밀 밀가루의 품질 및 특성 비교 분석)

  • Kim, Sang Sook;Chung, Hae Young
    • The Korean Journal of Food And Nutrition
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    • v.27 no.2
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    • pp.287-293
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    • 2014
  • The physicochemical characteristics of 4 domestic wheat flour products were compared to those of 4 imported wheat flour products marketed in Korea. The contents of moisture, ash, protein, total dietary fiber (TDF), color (L, a, b), whiteness, solvent retention capacity (SRC), water absorption index (WAI), water soluble index (WSI), pasting characteristics by rapid visco analyzer (RVA), and principle component analysis (PCA) were analyzed. The domestic wheat flour products were composed of higher content in ash and protein, compared to the imported wheat flour products. The domestic wheat flour products had lower SRC and WSI characteristics than the imported wheat flour products. The values of lactic acid SRC (LASRC) in the imported wheat flour products showed an increasing trend as the protein content increased. The differences in viscosity were observed in the domestic wheat flour products. However, no major significant differences of viscosity were found among the imported wheat flour products. The result of PCA showed a consistent trend in the imported wheat flour (strong, medium, and weak), while a consistent trend was not shown in the domestic wheat flour products. Therefore, further research is needed to standardize the different types of domestic wheat flour products.

Application of Artificial Intelligence-based Digital Pathology in Biomedical Research

  • Jin Seok Kang
    • Biomedical Science Letters
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    • v.29 no.2
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    • pp.53-57
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    • 2023
  • The main objective of pathologists is to achieve accurate lesion diagnoses, which has become increasingly challenging due to the growing number of pathological slides that need to be examined. However, using digital technology has made it easier to complete this task compared to older methods. Digital pathology is a specialized field that manages data from digitized specimen slides, utilizing image processing technology to automate and improve analysis. It aims to enhance the precision, reproducibility, and standardization of pathology-based researches, preclinical, and clinical trials through the sophisticated techniques it employs. The advent of whole slide imaging (WSI) technology is revolutionizing the pathology field by replacing glass slides as the primary method of pathology evaluation. Image processing technology that utilizes WSI is being implemented to automate and enhance analysis. Artificial intelligence (AI) algorithms are being developed to assist pathologic diagnosis and detection and segmentation of specific objects. Application of AI-based digital pathology in biomedical researches is classified into four areas: diagnosis and rapid peer review, quantification, prognosis prediction, and education. AI-based digital pathology can result in a higher accuracy rate for lesion diagnosis than using either a pathologist or AI alone. Combining AI with pathologists can enhance and standardize pathology-based investigations, reducing the time and cost required for pathologists to screen tissue slides for abnormalities. And AI-based digital pathology can identify and quantify structures in tissues. Lastly, it can help predict and monitor disease progression and response to therapy, contributing to personalized medicine.