• Journal of the Korean Society of Food Science and Nutrition
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• v.34 no.2
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• pp.306-310
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• 2005

The comparison in release rate constant and properties of extracts from extruded raw ginseng and extruded white ginseng was conducted to apply extrusion process for manufacturing of released ginseng tea bag. Dry raw ginseng and white ginseng powder were extruded at 20∼30% moisture content and 200∼300 rpm by using an experimental twin-screw extruder. Browness and redness (both indicated the releasing of saponin and ginsenosides) were increased with the increase in the screw speed and the decrease of moisture content. Crude saponin and water solubility index (WSI) of both ginseng also share the same behaviour against the level of screw speed and moisture content, as well as browness and redness. The particle size effects of extruded raw ginseng at 20% and 28% moisture content on absorbance of released extract at 260 up to 560 nm, WSI, and water absorption index were determined. While particle size decreased from 800∼1000 nm to 200∼500 nm, absorbance and WSI are decreased. Absorbance and WSI shown increasing level while moisture content was decreased. In conclusion, the formation of pores by expansion and disruption of cell wall in extrusion cooking were obviously responsible to increase the amount of released extract of extruded ginseng and its WSI as well. The extrusion process turns out be the efficient process for manufacturing of commercial ginseng tea product than those of other thermal processes.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.42 no.2
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• pp.166-172
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• 1997

This experiment was carried out to clarify the effect of the deep water irrigation on dry-seeded rice cultivation at the three different water managements-deep continuous flooding(DCF), water saving irrigation(WSI), ordinary irrigation(OI). The highest tillering numbers per $m^2$ of rice were 551, 466 and 455 in OI, WSI and DCF, respectively. The tillering number of rice plants were significantly reduced in DCF. Heading date was delayed and the total chlorophyll content in leaf after heading was higher in DCF than those in other irrigation methods. For the characteristics associated with lodging, the culm length in DCF was slightly elongated and the diameter of culm in DCF was thicker than that in WSI and OI. The breaking weight and bending moment in DCF also were higher than those in others. As the result, although the culm length in DCF was long, the lodging index was comparatively low. The panicle length in DCF was longer than in OI and WSI. The spikelet number per $m^2$ and 1,000-grain weight were the most in WSI, while panicle number, ripened grain ratio and grain weight were not significantly different. Longer panicle length and more spikelet number resulted in higher yielding capacity in DCF.

• Korean Journal of Food Science and Technology
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• v.28 no.1
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• pp.169-178
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• 1996

Target parameters such as water solubility index (WSI), intrinsic viscosity (IV), water holding capacity (WHC), oil holding capacity (OHC), soluble dietary fiber (SDF) and microstructure were investigated on three different screw configurations during twin-screw extrusion of wheat bran. WSI of raw wheat bran (RWB) was 13.7%, while that of extrudates ranged $16.3{\sim}23.2%$ when extruded using screw configurations with 5 reverse screw elements (RSE). It was found that the moisture content of RWB greatly affected WSI of extrudates. IV of wheat bran extrudates increased from 10.6 ml/g of RWB to $37.86{\sim}44.37\;ml/g$ of extrudates extruded using 3, 4 and 5 RSE, whose trend was highly related to the moisture content of RWB and the extrusion pressure. Multiplication of IV and soluble solid (SS) content exhibited good correlation $(R^2=0.85)$ with specific mechanical energy (SME). The results suggested that SS and molecular size are an important factor governed by the SME in solubilization of wheat bran. WHC increased with increasing feed rate and moisture content, while OHC decreased. SDF increased from 2.68% of RWB to $4.32{\sim}6.48%$ of extruded wheat bran, indicating the significant breakdown of cell wall components. Microstructure of the extrudates showed the distinct patterns of degradation and solubilization of cell wall structure, depending on the moisture content of RWB.

• Information and Communications Magazine
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• v.23 no.1
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• pp.65-76
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 1995.02a
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• pp.055-56
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• 1995

• Journal of the Korean institute of surface engineering
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• v.27 no.2
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• pp.83-90
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• 1994

We have investigated the mechanism for the abnormal oxide growth occuring during oxidation of the crystalline tungsten silicide. TEM and XPS analysis reveal the abnormaly grown oxide layer consisting of crystalline $Wo_3$ and amorphous $SiO_2$. The presence of crystalline $Wo_3$ provides a rapid diffusion of oxygen through the oxide layer. The abnormal oxide growth is mainly due to the poor quality of initial oxide layer growth on tungsten silicide. Two species such as tungsten and silicon from decomposition fo tungsten silicide as well as silicon supplied from the underlying polysilicon are the main contributors sto abnormal oxide forma-tion. Consequently, the abnormal oxidation results in the disintegration of tungsten silicide and thinning of polysilicon as well.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.183-189
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• 1992

The characteristics of N/O(SiOz/SisN4) film on WSi2 are compared with storage node Poly-Si. Leakage current and breakdown voltage are improved and storage capacitance is decreased. The oxidation rate of WSiz is more rapid than polycrystalline silicon. Thus the thick bottom oxide on the WSiz causes to the decrease of capacitance. The out diffusion of dopant impurity in polycrystalline silicon through the silicide leads to the formation of a depletion region in the polycrystalline silicon and the decrease of depletion capacitance. That results in the decrease of the overall storage capacitance.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.1325-1326
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• 2006

Tungsten-molydiside $W_xMo_{1-x}Si_2$ was synthesized by self-propagating high temperature synthesis (SHS). The SHS product with the initial composition of (0.5Mo+0.5W+2Si) contains 23.9% $MoSi_2$, 40.89% $WSi_2$ with remaining 9.11% Mo, 9.16% Si and 16.94%W. Lattice parameters of the $MoSi_2$ and $WSi_2$ determined by Rietvelt analysis were a=0.3206 nm, c=0.7841 nm and a=0.3212 nm, c=0.7822 nm, respectively.

• ETRI Journal
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• v.13 no.4
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• pp.35-41
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• 1991

저전력 고집적 GaAs 디지틀 IC에 적합한 기본 논리회로인 DCFL (Direct Coupled FET Logic) 을 구현하기 위한 소자로 WSi게이트 MESFET 공정을 연구하였으며, 이와 함께 TiPtAu 게이트 소자를 제작하였다. MESFET 의 제작은 내열성게이트를 이용한 자기정렬 이온주입 공정을 사용하였으며 주입된 Si 이온은 급속열처리 방법으로 활성화하였다. 또한 제작공정중 저항성 접촉의 형성은 절연막을 이용한 리프트 - 오프 공정을 이용하였다. 제작된 WSi게이트 MESFET은 $1\mum$ 게이트인 경우 222mS/mm의 트랜스컨덕턴스를 나타내어 우수한 동작특성과 집적회로 공정의 적합성을 보였으며 이와 동등한 공정조건으로 제작된 TiPtAu 게이트 MESFET 은 2" 기판 내에서 84mV의 임계전압 변화를 나타내었다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.10
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• pp.1553-1571
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• 1993

A significant amount of research has focused on the development of highly parallel architectures to obtain far more computational power than conventional computer systems. These architectures usually comprise of a large number of processors communicating through an interconnection network. The VLSI (Very Large Scale Integration) and WSI (Wafer Scale Integration) cellular arrays form one important class of those parallel architectures, and consist of a large number of simple processing cells, all on a single chip or wafer, each interconnected only to its neighbors. This paper studies three fundamental issues in these arrays : fault-tolerant reconfiguration. functional reconfiguration, and their integration. The paper examines conventional techniques, and gives an in-depth discussion about fault-tolerant reconfiguration and functional reconfiguration, presenting testing control strategy, configuration control strategy, steps required f4r each reconfiguration, and other relevant topics. The issue of integrating fault tolerant reconfiguration and functional reconfiguration has been addressed only recently. To tackle that problem, the paper identifies the relation between fault tolerant reconfiguration and functional reconfiguration, and discusses appropriate testing and configuration control strategy for integrated reconfiguration on VLSI and WSI cellular arrays.