• Title/Summary/Keyword: WSI

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Drought Index Calculation for Irrigation Reservoirs (관개용 저수지의 한발지수산정)

  • 김선주;이광야;신동원
    • Magazine of the Korean Society of Agricultural Engineers
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    • v.37 no.6
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    • pp.103-111
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    • 1995
  • Drought index calculation based on the principal hydrological parameters, such as rainfall and reservoir storage, can estimate the duration and intensity of drought in irrigation reservoirs. It is difficult to build up a drought criteria since the conditions change variously by the reliability of rainfall. Because of the increasing water demands, it is urgent to prepare a generalized positive countermeasure to overcome drought. Water demands can at calculated but the estimation of drought characteristics, and the effective water management method can be established. The purpose of this study is to obtain a drought index and build up a data-base on the reservoir basins for establishing the fundamental hydrological data-base. This Index can observe the behavior of the WSI(Water Supply Index) and the component indices. The results summarized through this study are as follows. 1. WSI value of zero does not correspond to 100% in average due to the skewness in the probability distributions. 2. WSI is not a linear index; that is, given change in terms of water volume or percentage of average does not result in a proportional change on the WSI scale. 3. WSI is not always between the reservoir and the rainfall index in magnitude. This is only true if the component indices are of opposite sign. If they are of the same sign, the SWSI will often have a mangitude greater than either of the component indices. This is easily understood, because the concurrence of extreme values of the same sign for the two components is rarer than the occurrence of extreme values for either of the two components individually.

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Quality Characteristics of Commercial Breakfast Cereals (시판 Breakfast Cereals의 품질특성)

  • Park, Chan-Kyeong;Maeng, Young-Sun
    • Korean Journal of Food Science and Technology
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    • v.24 no.3
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    • pp.289-293
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    • 1992
  • This study was carried out to investigate the quality characteristics of commercial breakfast cereals. The results showed that as water absorption index (WAI) increased, water soluble index (WSI) decreased. WSI has an effect on Bowl life, so Bowl life became longer as WSI enhanced. The size, shape and texture of breakfast cereals were also affective factors of their Bowl life. The quality describing terms of breakfast cereals were surveyed and the terms were classified to brittleness, roasted nutty taste, sweetness, hardness and aftertaste, especially brittleness was the most important quality determining terms among these. Significantly, sweetness had positive correlationship with roasted nutty taste. Overall eating quality had positively correlationship with color and roasted nutty flavor, and negatively with pain in mouth, adhesiveness and additive taste.

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Investigation of $WSi_2$ Gate for the Integration With $HfO_3$gate oxide for MOS Devices (MOS 소자를 위한 $HfO_3$게이트 절연체와 $WSi_2$게이트의 집적화 연구)

  • 노관종;양성우;강혁수;노용한
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.832-835
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    • 2001
  • We report the structural and electrical properties of hafnium oxide (HfO$_2$) films with tungsten silicide (WSi$_2$) metal gate. In this study, HfO$_2$thin films were fabricated by oxidation of sputtered Hf metal films on Si, and WSi$_2$was deposited directly on HfO$_2$by LPCVD. The hysteresis windows in C-V curves of the WSi$_2$HfO$_2$/Si MOS capacitors were negligible (<20 mV), and had no dependence on frequency from 10 kHz to 1 MHz and bias ramp rate from 10 mV to 1 V. In addition, leakage current was very low in the range of 10$^{-9}$ ~10$^{-10}$ A to ~ 1 V, which was due to the formation of interfacial hafnium silicate layer between HfO$_2$and Si. After PMA (post metallization annealing) of the WSi$_2$/HfO$_2$/Si MOS capacitors at 500 $^{\circ}C$ EOT (equivalent oxide thickness) was reduced from 26 to 22 $\AA$ and the leakage current was reduced by approximately one order as compared to that measured before annealing. These results indicate that the effect of fluorine diffusion is negligible and annealing minimizes the etching damage.

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$Al_2O_3/HfO/Al_2O_3$ 터널장벽 $WSi_2$ 나노 부유게이트 커패시터의 전기적 특성

  • Lee, Hyo-Jun;Lee, Dong-Uk;Han, Dong-Seok;Kim, Eun-Gyu;Yu, Hui-Uk;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.191-192
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    • 2010
  • 높은 유전상수를 가지는 터널 장벽물질 들은 플래쉬메모리 및 나노 부유게이트 메모리 소자에서 터널의 두께 및 밴드갭 구조의 변형을 통하여 단일층의 $SiO_2$ 터널장벽에 비하여 동작속도를 향상시키고 누설전류를 줄이며 전하보존 특성을 높여줄 수 있다.[1-3] 본 연구에서는 $Al_2O_3/HfO/Al_2O_3$구조의 고 유전체 터널장벽을 사용하여 $WSi_2$ 나노입자를 가지게 되는 metal-oxide-semiconductor(MOS)구조의 커패시터를 제작하여 전기적인 특성을 확인하였다. p형 (100) Si기판 위에 $Al_2O_3/HfO/Al_2O_3$ (AHA)의 터널장벽구조를 원자층 단일 증착법을 이용하여 $350^{\circ}C$에서 각각 2 nm/1 nm/3 nm 두께로 증착시킨 다음, $WSi_2$ 나노입자를 제작하기 위하여 얇은 $WSi_2$ 박막을 마그네트론 스퍼터링법으로 3 - 4 nm의 두께로 증착시켰다. 그 후 $N_2$분위기에서 급속열처리 장치로 $900^{\circ}C$에서 1분간의 열처리과정을 통하여 AHA로 이루어진 터널 장벽위에 $WSi_2$ 나노입자들이 형성할 수 있었다. 그리고 초 고진공 마그네트론 스퍼터링장치로 $SiO_2$ 컨트롤 절연막을 20 nm 증착하고, 마지막으로 열 증기로 200 nm의 알루미늄 게이트 전극을 증착하여 소자를 완성하였다. 그림 1은 AHA 터널장벽을 이용한 $WSi_2$ 나노 부유게이트 커패시터 구조의 1-MHz 전기용량-전압 특성을 보여준다. 여기서, ${\pm}3\;V$에서 ${\pm}9\;V$까지 게이트전압을 점차적으로 증가시켰을 때 메모리창은 최대 4.6 V로 나타났다. 따라서 AHA의 고 유전체 터널층을 가지는 $WSi_2$ 나노입자 커패시터 구조가 차세대 비 휘발성 메모리로서 충분히 사용가능함을 보였다.

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Estimation of Genetic Parameters and Trends for Weaning-to-first Service Interval and Litter Traits in a Commercial Landrace-Large White Swine Population in Northern Thailand

  • Chansomboon, C.;Elzo, M.A.;Suwanasopee, T.;Koonawootrittriron, S.
    • Asian-Australasian Journal of Animal Sciences
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    • v.23 no.5
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    • pp.543-555
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    • 2010
  • The objectives of this research were the estimation of genetic parameters and trends for weaning-to-first service interval (WSI), and litter traits in a commercial swine population composed of Landrace (L), Large White (T), LT, and TL animals in Chiang Mai, Northern Thailand. The dataset contained 4,399 records of WSI, number of piglets born alive (NBA), litter weight of live piglets at birth (LBW), number of piglets at weaning (NPW), and litter weight at weaning (LWW). Variance and covariance components were estimated with REML using 2-trait analyses. An animal model was used for WSI and a sire-dam model for litter traits. Fixed effects were farrowing year-season, breed group of sow, breed group of boar (litter traits), parity, heterosis (litter traits), sow age, and lactation length (NPW and LWW). Random effects were boar (litter traits), sow, permanent environment, and residual. Heritabilities for direct genetic effects were low for WSI (0.04${\pm}$0.02) and litter traits (0.05${\pm}$0.02 to 0.06${\pm}$0.02). Most heritabilities for maternal litter trait effects were 20% to 50% lower than their direct counterparts. Repeatability for WSI was similar to its heritability. Repeatabilities for litter traits ranged from 0.15${\pm}$0.02 to 0.18${\pm}$F0.02. Direct genetic, permanent environment, and phenotypic correlations between WSI and litter traits were near zero. Direct genetic correlations among litter traits ranged from 0.56${\pm}$0.20 to 0.95${\pm}$0.05, except for near zero estimates between NBA and LWW, and LBW and LWW. Maternal, permanent environment, and phenotypic correlations among litter traits had similar patterns of values to direct genetic correlations. Boar genetic trends were small and significant only for NBA (-0.015${\pm}$0.005 piglets/yr, p<0.004). Sow genetic trends were small, negative, and significant (-0.036${\pm}$0.013 d/yr, p<0.01 for WSI; -0.017${\pm}$0.005 piglets/yr, p<0.007, for NBA; -0.015${\pm}$0.005 kg/yr, p<0.01, for LBW; -0.019${\pm}$0.008 piglets/yr, p<0.02, for NPW; and -0.022${\pm}$0.006 kg/yr, p<0.003, for LWW). Permanent environmental correlations were small, negative, and significant only for WSI (-0.028${\pm}$0.011 d/yr, p<0.02). Environmental trends were positive and significant only for litter traits (p<0.01 to p<0.0003). Selection based on predicted genetic values rather than phenotypes could be advantageous in this population. A single trait analysis could be used for WSI and a multiple trait analysis could be implemented for litter traits.

Synthesis of Dense $WSi_2\;and\;WSi_2-xvol.%SiC$ composites by High- Frequency Induction Combustion and Its Mechanical Properties

  • Oh Dong-Young;Kim Hwan-Cheol;Yoon Jin-Kook;Shon In-Jin
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2004.11a
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    • pp.94-95
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    • 2004
  • Using the high-frequency induction heated combustion method, the simultaneous synthesis and densification of $WSi_2-xvol.%SiC$ (x=0, 10, 20, 30) composites was accomplished using elemental powders of W, Si and C. A complete synthesis and densification of the materials was achieved in one step within a duration of 2 min. The relative density of the composite was up to 97% for the applied pressure of 60MPa and the induced current. The average grain size of $WSi_2$ are 6.9, 6.1, and $5.0{\mu}m$, respectively. The hardness and the fracture toughness increases with increasing SiC content. The maximum values for the hardness and fracture toughness are $1840kg/mm^2\;and\;5.1MPa{\cdot}m^{1/2}\;at\;WSi_2-30vol.%SiC$.

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Fabrication and Mechanical Properties of Dense WSi2-20vol.%SiC Composite by High-Frequency Induction-Heated Combustion Synthesis (고주파유도가열 연소합성에 의한 치밀한 WSi2-20vol.%SiC 복합재료 제조 및 기계적 특성)

  • Oh, Dong-Young;Kim, Hwan-Cheol;Lee, Sang-Kwon;Shon, In-Jin
    • Journal of Powder Materials
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    • v.12 no.1
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    • pp.17-23
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    • 2005
  • Dense $WSi_2$-20vol.%SiC composite was synthesized by high-frequency induction-heated combustion synthesis(HFIHCS) method within 2 minutes in one step from elemental powder mixture of W, Si and C. Simultaneous combustion synthesis and densification were accomplished under the combined effects of an induced current and mechanical pressure. Highly dense $WSi_2$-20vol.%SiC with relative density of up to 97% was produced under simultaneous application of 60MPa pressure and the induced current. The average grain size of $WSi_2$ was about $5.2{\mu}m$. The hardness and fracture toughness values obtained were 1700kg/$mm^2$ and $4.4MPa{\cdot}m^{1/2}$, respectively.

Development of Elimination Method of Measurement noise to Improve accuracy for White Light Interferometry (백색광 간섭계의 정밀도 향상을 위한 노이즈 제거 방법)

  • Ko, Kuk-Won;Cho, Soo-Yong;Kim, Min-Young
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.6
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    • pp.519-522
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    • 2008
  • As industry of a semiconductor and LCD industry have been rapidly growing, precision technologies of machining such as etching and 3D measurement are required. Stylus has been important measuring method in traditional manufacturing process. However, its disadvantages are low measuring speed and damage possibility at contacting point. To overcome mentioned disadvantage, non-contacting measurement method is needed such as PMP(Phase Measuring Profilometry), WSI(white scanning interferometer) and Confocal Profilometry. Among above 3 well-known methods, WSI started to be applied to FPD(flat panel display) manufacturing process. Even though it overcomes 21t ambiguity of PMP method and can measure objects which has specular surface, the measuring speed and vibration coming from manufacturing machine are one of main issue to apply full automatic total inspection. In this study, We develop high speed WSI system and algorithm to reduce unknown noise. The developing WSI and algorithm are implemented to measure 3D surface of wafer. Experimental results revealed that the proposed system and algorithm are able to measure 3D surface profile of wafer with a good precision and high speed.

Studies on the Electrical Resistance and the Behaviors of Excess Silicon of Tungsten Silicide during Oxidation (텅스텐 실리사이드의 산화에 따른 전기저항 및 과잉실리콘의 거동에 관한 연구)

  • 남유원;이종무;임호빈;이종길
    • Journal of the Korean Ceramic Society
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    • v.27 no.5
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    • pp.645-651
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    • 1990
  • Effects of excess Si on the properities of the oxide of CVD tungsten silicide were investigated by comparing the characteristics of the two kinds of thermal oxide for CVD-WSi2.7 and WSi3.1 films on the polycrystalline Si film each other. It is reveraled from AES analysis that Si in the surface region of the silicide film is consumed to make composition and resistivity of the silicide film very nonuniform for the case of the oxidation of WSi3.1, while the underlayer polycrystalline Si was consumed for the case of the oxidation of WSi2.7.

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