• Journal of the Korean Society of Food Science and Nutrition
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• v.32 no.8
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• pp.1270-1277
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• 2003

The extrusion conditions of the soymilk residue and corn grits mixtures were optimized. The experiment was designed according to the D-optimal design of response surface methodology (RSM), which shows 18 experimental points including 4 replicates for three independent variables (screw speed, water content and die temperature). The responses variables such as bending force, expansion ratio, bulk density, water solubility index (WSI), water absorption index (WAI), and color values (L＊, a＊, b＊) were evaluated using response surface analysis. Expansion ratio and WSI decreased with increasing water content, whereas bulk density tended to increase with increasing water content. While greater screw speeds enhanced WSI and yellowness, higher moisture contents decreased the expansion ratio and WSI value. However, die temperature did not influence upon the response variables. The optimum extrusion conditions by numerical and graphical methods were similar: the screw speed, water content, and die temperature were 250 rpm, 22.43% and l28.16$^{\circ}C$ by the numerical method; 250 rpm, 22.43%, and 128.02$^{\circ}C$ by graphical method.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2004.04a
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• pp.34-35
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.08a
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• pp.94.3-94
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• 1998

• Korean Journal of Food Science and Technology
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• v.45 no.4
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• pp.473-477
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• 2013

The aim of this study was to identify the optimal ingredient-mixing ratio of Job's-tear and wheat flour subjected to extrusion. A modified distance-based mixture design analysis was chosen for the experimental design. The results showed that the bending failure force, the a-value, and the water absorbtion index (WAI) value had no correlation with the mixture ratio of Job's-tear and wheat flour. However, the diameter of the extrudates, the L- and b-values, and the water solubility index (WSI) value were all found to be correlated to the mixture ratio. While the first three values were determined using a linear model, the WSI value was determined using a quadratic model. The diameter and color had an inverse correlation to the mixture ratio: the higher the ratio of Job's-tear to wheat flour, the lower the diameter and darker the color. The L- and b-values were found to change in accordance with the mixture ratio of Job's-tear to wheat flour. The lowest WSI value was obtained at a 40:60 ratio of Job's-tear to wheat.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.4
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• pp.173-178
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• 2003

In this paper, we studied the physical and electrical characteristics of $\textrm{WSi}_{x}$ thin film with respect to the adoption of the DCS (dichlorosiliane) post flow and the variation of deposition temperature. XRD measurements show that as deposited thin film has a hexagonal structure regardless of deposition Process. However, we find that the phase of thin film has changed to a tetragonal structure after the heat treatment at $680^{\circ}C$. Adoption of DCS post flow and increment of deposition temperature result in the increments of Si/W composition ratio. These conditions also result in the increment of sheet resistance by the amount 3.0~4.2$\Omega$/$\square$, but give the tendency in the decrement of stress by 0.27~0.3 E10dyne/$\textrm{cm}^2$. We also find that the contact resistance of word line and bit line interconnection was decreased by the amount 5.33~16.43$\mu$$\Omega$-$\textrm{cm}^2$, when applying DCS post flow and increasing deposition temperature.

• Mass Spectrometry Letters
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• v.3 no.1
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• pp.18-20
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• 2012

We report observation of laser desorption/ionization (LDI) of peptides from flat surfaces of tungsten silicide ($WSi_2$). In contrast to MALDI (matrix-assisted laser desorption/ionization) and SALDI (surface-assisted laser desorption/ionization) mass spectrometry, this study did not utilize any matrices and surface nanostructures. In this work, LDI on $WSi_2$ surfaces is demonstrated to cover a mass range up to 1,600 Da (somatostatin; monoisotopic mass = 1637.9 Da). In addition, it exhibited a high sensitivity, which could detect peptides, which could detect peptides of low femtomole levels (20 fmol for angiotensin II). The observed LDI process was discussed to be largely thermal, more specifically, due to laser-induced surface heating that is most likely promoted by the low thermal diffusivity (${\kappa}$) of $WSi_2$ substrate.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.7
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• pp.702-708
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• 2013

The white-light scanning interferometer (WSI) is an effective optical measurement system for high-precision industries (e.g., flat-panel display and electronics packaging manufacturers) and semiconductor manufacturing industries. Its major disadvantages include a slow image-capturing speed for interferogram acquisition and a high computational cost for peak-detection on the acquired interferogram. Here, a WSI system is proposed for the semiconductor inspection process. The new imaging acquisition technique uses an 'on-the-fly' imaging system. During the vertical scanning motion of the WSI, interference fringe images are sequentially acquired at a series of pre-defined lens positions, without conventional stepwise motions. To reduce the calculation time, a parallel computing method is used to link multiple personal computers (PCs). Experiments were performed to evaluate the proposed high-speed WSI system.

• Journal of the Korean institute of surface engineering
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• v.29 no.1
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• pp.3-14
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• 1996

High temperature anneal of W-rich silicides, inferior to adherence compared with Si-rich silicides, resulted in the film peeling off from the Si-substrate when WSix thickness reached more than critical thickness. Investigation of the W-rich silicide films peeling off from the substrate revealed that the voids underneath the $WSi_2$ produced through silicide reaction were responsible for the poor adherence of W-rich silicide. In addition, internal stress in the film increased as the silicide thickness increased. In order to promote the adhesion of WSix to Si-substrate, thin Ti-layer was formed between WSi and Si-substrate(WSix/Ti/Si). No voids were observed in $WSi_2$/Ti/Si $N_2$-annealed at $1000^{\circ}C$, thereby leading to an increase of the critical thickness from ～1700$\AA$ to more than 2500$\AA$. However, higher resisiti-vity was obtained in WSix/Ti/Si than in WSix/Si. Finally, different silicide reaction mechanism for the structures(WSix/Si, WSix/Ti/Si) was proposed to explain the formation of voids as well as the role of thin Ti-layer.

• Proceedings of the Korean Society of Postharvest Science and Technology of Agricultural Products Conference
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• 2003.10a
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• pp.221.1-221
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• 2003

습식쌀가루는 침지 후 롤밀(Roll mill)로 분쇄 후 건조하여 휘츠밀(Fitz Mill)로 분쇄하여 제조하였으며 건식쌀가루는 Roll mill, Fitz Mill, 볼밀(Ball mill)의 입자 크기별로 만들어 쌀가루의 특성을 검토하였다. 건식쌀가루의 경우 제분공정의 횟수가 증가할수록 자기가 증가됨을 나타내었고 a값과 b값의 감소를 나타내었다. 습식은 건식에 비해 유의적으로 높은 자기를 나타내었고 건식과 마찬가지로 제분공정이 길어질수록 같은 색도 양상을 나타내었다. 각 입자크기에 따른 색도는 습식이 더높은 밝기 값을 나타내었다. 제조공정별 단계에 따른 수분흡수지수(WAI) 및 수분용해지수(WSI)의 값은 건식, 습식 모두 roll mill < Fitz mill < Ball mill 순으로 높은 값을 나타냈고, 물에 침지되어 침출액이 제거된 습식쌀가루의 WAI, WSI는 건식쌀가루보다 낮은 값을 나타내었다. 입자크기에 따른 건식쌀가루의 WAI, WSI의값은 입자가 작을수록 높은 값을 나타낸 반면 습식쌀가루의 WAS의 값은 80-100Mesh의 입자에서 가장 높은 값을 나타냈었고, 100-140Mesh이후로는 WAS의 값이 감소 한 반면 WSI의 값은 입자가 작을수록 높은 값을 나타내었다. 호화양상은 습식쌀가루가 호화엔탈피 (ΔH)의 값이 높게 나타났으며 제분방법의 횟수가 증가할수록 전분손상도가 증가됨을 나타내었다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.43-49
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• 1997

Tungsten poycide has studied gate oxide reliability and dielectric strength charactristics as the composition of gate electrode which applied submicron on CMOS and MOS device for optimizing gate electrode resistivity. The gate oxide reliability has been tested using the TDDB(time dependent dielectric breakdwon) and SCTDDB (stepped current TDDB) and corelation between polysilicon and WSi$_{2}$ layer. iN the case of high intrinsic reliability and good breakdown chracteristics on polysilicon, confirmed that tungsten polycide layer is a better reliabilify properities than polysilicon layer. Also, hole trap is detected on the polysilicon structure meanwhile electron trap is detected on polycide structure. In the case of electron trap, the WSi$_{2}$ layer is larger interface trap genration than polysilicon on large POCL$_{3}$ doping time and high POCL$_{3}$ doping temperature condition. WSi$_{2}$ layer's leakage current is less than 1 order and dielectric strength is a larger than 2MV/cm.