• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.667-667
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• 2013

Optimizing morphology of the front surface with three dimensional structures (3D) in solar cell is essential element for not only effectivelight harvesting but also carrier collection and separation without the cost burden in process. We designed a three-dimensionally ordered front surface with wet chemical etching. Wet chemical etching is a proper way to have three dimensional structures. The method efficiently transmits the incident light at the front surface to a Si absorber and has competitive price in manufacturing when comparing with reactive ion etching (RIE) to have three dimensional structures. This indicates that optimized front surface with three dimensional structures by wet chemical etching will bring effective light management in solar cells.

• The Korean Journal of Rheology
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• v.5 no.2
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• pp.136-143
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• 1993

PDSC(pressurized differential scanning calorimeter)를 이용하여 물 또는 물 -DMF(N,N-dimethylformamide) 혼합물을 함유한 아크릴로니크릴 중합체(wet-PAN)의 융점 거동을 조사하였으며 wet-PAN 용융체의 점도측정에 적합한 모세관형 점도계를 제작하여 전단속도 및 온도에 따른 점도변화를 고찰하였다. 물에 의한 wet-PAN의 융점 및 용융점도 는 물의 함량이 증가함에 따라 점근적으로 감소하여 25wt% 이상에서는 거의 일정하였다. 또한 물(25wt% 기준)의 일부를 DMF로 대체하였을 경우에는 융점이 감소하였다. 한편 wet-PAN의 용융점도는 power-law 거동에 준하였으며 물계에서는 power-law 지수(n)가 0.16(19$0^{\circ}C$)~0.18(17$0^{\circ}C$)인데 비하여 물(95)~DMF(5) 혼합물계에서는 0.24(175$^{\circ}C$)~0.25(16 5$^{\circ}C$)로서 점도의 전단담화거동이 약해졌으나 흐름의 활성화에너지는 다소 증가 하였다.

• Proceedings of the Korean Geotechical Society Conference
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• 2006.03a
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• pp.111-120
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• 2006

Opening size of 3 types of geotextile were tested using dry and wet sieving methods to evaluate characteristics of test methods and to compare the test results. Judging from test results, dry sieving method is a poor test, having many problems causing many errors but a simple-quick test. Wet sieving method is a very specific test avoiding many of the problems of dry sieving such as electrostatic charges, trapping in the geotextiles and so on. However, one of wet sieving tests, KSK ISO12956, takes long time to complete a test and is too strict to handle loss of granular material. Generally, opening size of a geotextile by wet sieving test is smaller than that of dry sieving test. Especially, opening size by KSF 2126 which is one of wet sieving test but disused at present anymore is similar or smaller than that by KSK ISO12956 method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.158-162
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• 2001

In this report, a new process for patterning of YBaCuO thin films, ICP(inductively coupled plasma) method, is described by comparing with existing wet etching method. Two 100㎛ wide and 2mm long YBaCuO striplines on LaAlO$_3$ substrates have been fabricated using two patterning techniques. And the properties were compared with the critical temperature and the SEM photography. Then, the critical temperatures of two samples were about 88 K, but the cross section of sample using ICP method was shaper than that using the wet etching method. ICP method can be used as a good etching technique process for patterning of YBaCuO superconductor.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.935-938
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• 1997

Recently, the minimum line width shows a tendency to decrease and the multi-level increase in semiconductor. Therefore, a planarization technique is needed and chemical mechanical polishing(CMP) is considered as one of the most suitable process. CMP accomplishes a high polishing performance and a global planarization of high quality. But there are several defects in CMP such as micro-scratches, abrasive contaminations, and non-uniformity of polished wafer edges. Wet etching include of Spin-etching can improve he defects of CMP. It uses abrasive-free chemical solution instead of slurry. On this study, ILD(INterlayer-Dielectric) was removed by CMP and wet-etching methods in order to investigate the superiority of wet etching mechanism. In the thin film wafer, the results were evaluated at a viewpoint of material removal rate(MRR) and within wafer non-uniformity(WIWNU). And pattern step height was also compared for planarization characteristics of the patterned wafer.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.2 s.191
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• pp.33-40
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• 2007

In this study, presintered and full sintered low purity alumina ceramics were machined with various tools to clarify the effect of cutting fluid in machinability. The main conclusions obtained were as follows. When the presintered ceramics were wet machined with sintered diamond tool, the tool wear becomes extremely large, and higher cutting speed can be used than in the case of full sintered ceramics. The productivity of wet cutting with the sintered diamond tool is much higher than that of dry cutting. In the case of the CBN and ceramic tools, the tool wear were smaller at wet cutting than at dry cutting, especially exhibiting considerably larger grooved tool wear in wet cutting with ceramic tool.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.970-973
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• 1999

When the size of the device is decreased, the hot carrier degradation presents a severe problem for long-term device reliability. In this paper we fabricated & tested the 0.26${\mu}{\textrm}{m}$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve and charge trapping using the Hp4145 device tester As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially a hot carrier lifetime(nitride oxide gate device satisfied 30years, but the lifetime of wet gate oxide was only 0.1year), variation of Vg, charge to breakdown and charge trapping etc.

• Journal of Korea Technical Association of The Pulp and Paper Industry
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• v.37 no.4 s.112
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• pp.26-31
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• 2005

The purpose of this study was to confirm paper strengthening properties with recently commercialized polyvinylamine. Because of its high cationic charge density, polyvinylamine has been investigated as a size retention and surface coating aids. In this study, we tried to confirm polyvinylamine as wet-end additives to improve dry and wet strength using LBKP and BCTMP pulps. As a result, we found improvement of dry and wet tensile properties of polyvinylamine with BCTMP were much better than LBKP condition. This phenomena could be explained that ionic bonding of cationic charge of polyvinylamine with abundant anionic substances of BCTMP was a very important factor to improve dry and wet strength of paper.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.34-36
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• 2015

Amorphous SiZnSnO(SZTO) thin film transistors(TFTs) have been fabricated by RF magnetron sputtering process, and they were annealed in air and in wet ambient. The electrical performance and the structure were analyzed by I-V measurement, XPS, AFM, and XRD. The results showed improvement in device performance by wet annealing process compared to air annealing treatment, because free electron was shown to be increased due to reaction of oxygen and hydrogen generating oxygen vacancy. This is understood by the generation of free electrons. We expect the wet annealing process to be a promising candidate to contributing to high electrical performance of oxide thin film transistors for backplane device applications.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.377-382
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• 2002

We investigated the appropriate wet cleaning process for Co-Ti-Si compounds formed on top of cobalt disilicide made from Co/Ti deposition and two rapid thermal annealing (RTA). We employed three wet cleaning processes, WP1 ($H_2$SO$_4$ etchant), WP2 ($NH_4$OH etchant), and WP3 which execute sequentially WP1 and WP2 after the first RTA. All samples were cleaned with BOE etchant after the second RTA. We characterized the sheet resistance with process steps by a four-point probe, the microstructure evolution by a cross detail sectional transmission electron microscope, a Auger depth profiler, and a X-ray diffractometer (XRD). We confirmed WP3 wet cleaning process were the most suitable to remove CoTiSi layer selectively.