• Analytical Science and Technology
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• v.11 no.6
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• pp.485-494
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• 1998

Ternary and quaternary alloys composed of Mo-Ru-Rh-Pd were prepared and their crystal structure and quantitative chemical compositions were analysed by XRD, WDX, EDX and ICP/AES. The results of X-ray diffraction studies showed that the alloys were crystallized in hexagonal close packing, well known as ${\varepsilon}$-phase with $P6_3/mmc$ of space group. The optimum accelerating voltage for Zr~Cd(40~48) analyzed by EPMA using PET crystal was found to be 15 kV and the linear regression coefficient(R) of atomic number and X-ray intensity was approximately 0.998 without Tc standard specimen. The WDX results of alloys of Mo and Pd by linear regression equations were detected to be 0.1% lower compared to WDX analysis results using standard specimen, while Ru, Rh were detected 3% higher. These alloys were completely dissolved in mixed acid of 12.5 mL HCl and 1 mL $HNO_3$, at $220^{\circ}C$ for 22 hours using autoclave with PTFE vessel. There was no reprecipitating phenomnon when diluted 100 times with 1N-HCl. The results of ICP/AES analysis deviated less than 4% comparing with those of normal WDX analysis.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.05a
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• pp.723-728
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• 1995

Alloy 600 표면에 레이저 빔을 이용하여 Ni, Cr 흔합분말 및 순수 Cr 분말로 표면합금층을 만들었다. 표면 합금층은 모재와 정합계면를 이루고 있으며 레이저 표면용용 시편에서와 같이 크게 면선단 응고부와 셀룰라 응고부로 나눌 수 있고, 모재에는 레이저 처리과정에서 생긴 수십 $\mu\textrm{m}$ 두께의 열영향 부위가 존재하였다. 그리고 합금층 내부에는 레이저 표면 용용된 시편과 달리 구형의 커다란 기공(pores)이 존재하였다. 레이저 표면 합금층에서 합금원소의 조성 분포를 조사하기 위해 레이저 처리된 시편에 대해 WDX 분석을 하였고, 합금층 내부에 Ni, Cr, Fe 원소의 조성 분포는 매우 균일하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.419-423
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• 1998

The internal defects in $(CaF_2)$ single crystal were characterized by the observation of optical microscopy, the element analysis and the transmittance analysis. In bubble and negative crystal which are composed to crystal plane of (100) and (111), the spread negative crystal in $(CaF_2)$ crystal gave an effect of low transmittance. The precipitates formed in bubble as internal cavities were analyzed by using WDX. Violet colored-crystal had higher a dislocation density than non-colored crystal, and the atomic ratio between Ca and F changed by poor F ion. In this result, we could determine indirectly that violet color was occurred by poor F ion.

• Restorative Dentistry and Endodontics
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• v.29 no.1
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• pp.36-43
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• 2004

The purpose of this study was to compare the microhardness and the fluoride content of enamel and dentin around fluoride- or non fluoride-containing restorations. Forty extracted human teeth were used and prepared cervical cavities on proximal surface. Experimental teeth were divided into five groups . Group 1 : Prime & Bond NT and Z100, Group 2 Prime & Bond NT and F2000, Group 3 : Scotchbond Multi-purpose and Z100, Group 4 : Scothcbond Multi-purpose and F2000, Group 5 : Fuji II LC. The cavities were filled with dentin adhesives and restorative materials. After each tooth was bisected, one half was tested microharaness and the other half was analyzed the fluoride at the enamel and dentin by an EPMA-WDX device. The results were as follows; 1. There was no statistical difference among the microhardness of enamel surface in all group. 2. The microhardness at dentin of $100{\;}\mu\textrm{m}$ point in Group 2 and $20{\;}\mu\textrm{m}$ point in Grocup 4 was lower than that of normal dentin (p>0.05). 3. There was no statistical difference among the fluoride content of enamel surface in all group. 4. The fluoride content at the dentin of $30{\;}\mu\textrm{m}$ point in Group 2 and 5 were higher than those at $100{\;}\mu\textrm{m}{\;}and{\;}200{\;}\mu\textrm{m}$ point in Group 2 and normal dentin (p<0.05). 5. At the dentin of $30{\;}\mu\textrm{m}$ point, Group 2 showed higher fluoride content than Group 1 and 3, and Group 5 showed higher fluoride content than other groups.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.332-335
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• 2004

Boron Phosphide films were deposited on(III) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with $PH_3$ using CVD. $N_2$ was employed as carrier gas. The optimal gas rates were 20 ml/min for $B_2H_6$, 60 ml/min for $PH_3$ ml/min and $1{\ell}/min$ for $N_2$. The films were annealed for 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is each $10.108{\AA}$ and $29.626{\AA}$. So, we could know every commonplace thing. The measurement of XRD shows that the films have the preferred orientation of(1 0 1). From SEM images, we could see that Boron Phosphide is showed of a structure, which is grain size, which is grain boundary size. Also, the measurement of AES is shown the films have $B_{13}P_2$ Stoichiometry. From WDX See that ingredient is detected each Boron and Phosporus. So, we could see that deposited BP thin film. In this study, we obtained the BP thin film by deposited in atmosphere pressure, and known to applicate as microwave absorbtion material of BP thin film.

• Journal of Korea Foundry Society
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• v.9 no.4
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• pp.320-326
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• 1989

Titanium-Boron-Aluminium master alloys are used extensively to grain-refine a wide range of aluminium alloys. This experiment was performed by various amounts of AlTi5B1 addition to the technical aluminium alloys, and also by changing cast temperature and hold time of the melts. The macrostructures were shown that with increasing the addition of AlTi5B1 to the melts, the grain became finer. In the case of cast temperature high enough over $900^{\circ}C$, the grain became coarser, but hold time change not affected on the grain refinement. Particles of $TiAl_3$, and $TiB_2$ were found in the grains and grainboundaries. The important role of grain refinement in this experiment were mainly $TiAl_3$, and also $TiB_2$ those have been confirmed in TEM, SEM, EDS, WDX and X-ray diffraction.

• Journal of the Korean institute of surface engineering
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• v.30 no.2
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• pp.144-154
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• 1997

Effects of plasma nitriding on the surface charcteristice of stainless steel(SS) were investjgated by utilizing wear tester, micro-hardness tester and potentiostat. The surface and corrosion morphology of plasma nitrided SS were analyzed by utilizing optical microscopy, SEM, XRD and WDX. It was found that plasma nitriding at $550^{\circ}C$, compared with $380^{\circ}C$, prodiced a good wear resistance and hardness as nitriding time increased, whereas Mo addition showd that were resistance and hardness decreased. Intergranular corrosion(IGC) resistance improved significantly in the case of plasma nirtrided SS containing 4.05wt% Mo at $380^{\circ}C$ because that nitrogen and Mo ast syner gidically to form a protective layer on surface which is responsible for the aggresive SCN-ion. Plasma nitrided at $550^{\circ}C$ decreased IGC as Mo content increased. Pitting improved in the plasma nitirided SS at Mo content incresased owing to retard a nucleation and growth of chromium carbide or nitirde in grain boundary.

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.33-42
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• 1993

Abstract The increasing application of $Al_2$,$O_3$ and related ceramics as engineering materials is because of their attractive properties of fine ceramics. One solution to the wide variety of ceramic to metal combination lies in the effective joining. Active metal brazing of $Al_2$,$O_3$, to STS304 was investigated using Cu -Ti alloys. Titanium additive is chosen since it is good oxide former~. Brazing is performed under vacuum($10^{-3}$-$10^{-4}$ torr), a temperature between 1100 and 120$0^{\circ}C$ and time of 0.5-1.5hr. The microstructure of the brazed joints of $Al_2$,$O_3$ to STS304 with Cu-Ti insert metals were examined by using optical microscope and SEM and reaction products were analyzed by using EDX, WDX and XRD. Also interfacial reactions occuring during the brazing of $Al_2$,$O_3$/Cu-Ti/STS304 system are discussed. Experimental results showed formation of Titanium oxide T$i_2$$O_3$ which is attributable to the joining $Al_2$,$O_3$ to STS304 with Cu-Ti insert metal.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.669-680
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• 1994

Oxidation behaviour of TiAl intermetallic compounds with the addition of Cr, V, Si, Mo, or Nb was investigated at 900~$1100^{\circ}C$ under the atmospheric environment. The reaction products were examined by XRD, SEM equipped with WDX. The weight gain by continuous oxidation increased with the addition of Cr or V, but there was less weight gain when Mo, Si or Nb was added individually. he oxidation rate of Cr- or V-added TiAl was always larger than that of TiAI. However, oxidation rate of Si-, Mo- or Nb-added TiAl was almost same or smaller than that of TiAI. Thus, it is concluded that the addition of Cr or V did not improve the oxidation resistance, whereas the addition of Si, Mo or Nb improved the oxidation resistance. Oxides formed on TiAl with Mo, Si, and Nb were found to be more protective, resulting from the decrease in diffusion rate of the alloying elements and oxygen. Nb strengthened the tendency to form $AI_{2}O_{3}$ in the early stage of oxidation, due to the continuous $AI_{2}O_{3}$ layer formation and dense $Tio_{2}+AI_{2}O_{3}$ layer. According to the Pt-marker test of TiAI- 5wt%Nb, oxygen diffused mainly inward while oxides were formed on the substrate surface. Upon thermal cyclic oxidation at $900^{\circ}C$, it is shown that the addition of Cr or Nb improved the adherence of oxide scale to the substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.243-246
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• 2004

Boron Phosphide films were deposited on (111) Si substrate at $650^{\circ}C$, by the reaction of $B_2H_6$ with PH, using APCVD. $N_2$ was carried out as carrier gas. The optimal gas rates were 20 ml/min for B2H6, 60 ml/min for PH3 and 1 l/min for N2. After as grown the films were insitu annealed fur 1hour in $N_2$ ambient at $550^{\circ}C$ and measured. The measurement of AFM shows that the average surface roughness is $10.108{\AA}$ for the reaction temperature at $450^{\circ}C$ and $29.626{\AA}$ fur the reaction temperature at $650^{\circ}C$. The measurement of XRD shows that the films have the orientation of(1 0 1). Also, the measurement of AES is shown that the films have $B_{13}P_2$ stoichiometry. For the Result of microwaves absorbtion properties using VNA, it obtained the permittivity of BP about 8 between $1.5{\sim}2.5GHz$. In this study, it obtained the BP thin film by deposited in atmosphere pressure And BP thin film can be after to applicate as microwave absolution material is obtained.