• Korean Journal of Materials Research
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• v.5 no.1
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• pp.42-54
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• 1995

$Ta_2O_5$ thin film IS a promising material for the high dielectrics of ULSI DRAM. In this study, $Ta_2O_5$ thin film was grown on p-type( 100) Si wafer by thermal metal organic chemical vapo deposition ( MCCVD) method and the effect of operating varialbles including substrate temperature( $T_s$), bubbler temperature( $T_ \sigma$), reactor pressure( P ) was investigated in detail. $Ta_2O_5$ thin film were analyzed by SEM, XRD, XPS, FT-IR, AES, TEM and AFM. In addition, the effect of various anneal methods was examined and compared. Anneal methods were furnace annealing( FA) and rapid thermal annealing( RTA) in $N_{2}$ or $O_{2}$ ambients. Growth rate was evidently classified into two different regimes. : (1) surface reaction rate-limited reglme in the range of $T_s$=300 ~ $400 ^{\circ}C$ and (2: mass transport-limited regime in the range of $T_s$=400 ~ $450^{\circ}C$.It was found that the effective activation energies were 18.46kcal/mol and 1.9kcal/mol, respectively. As the bubbler temperature increases, the growth rate became maximum at $T_ \sigma$=$140^{\circ}C$. With increasing pressure, the growth rate became maximum at P=3torr but the refractive index which is close to the bulk value of 2.1 was obtained in the range of 0.1 ~ 1 torr. Good step coverage of 85. 71% was obtained at $T_s$=$400 ^{\circ}C$ and sticking coefficient was 0.06 by comparison with Monte Carlo simulation result. From the results of AES, FT-IR and E M , the degree of SiO, formation at the interface between Si and TazO, was larger in the order of FA-$O_{2}$ > RTA-$O_{2}$, FA-$N_{2}$ > RTA-$N_{2}$. However, the $N_{2}$ ambient annealing resulted in more severe Weficiency in the $Ta_2O_5$ thin film than the TEX>$O_{2}$ ambient.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.52-59
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• 2007

In this paper, we analyzed and measured implant isolation characteristics for a 1.25 Gbps monolithic integrated hi-directional (M-BiDi) optoelectronic system-on-a-chip, which is a key component to constitute gigabit passive optical networks (PONs) for a fiber-to-the-home (FTTH). Also, we derived an equivalent circuit of the implant structure under various DC bias conditions. The 1.25 Gbps M-BiDi transmit-receive SoC consists of a laser diode with a monitor photodiode as a transmitter and a digital photodiode as a digital data receiver on the same InP wafer According to IEEE 802.3ah and ITU-T G.983.3 standards, a receiver sensitivity of the digital receiver has to satisfy under -24 dBm @ BER=10-12. Therefore, the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysed and measured results of the implant structure, the M-BiDi SoC with the implant area of 20 mm width and more than 200 mm distance between the laser diode and monitor photodiode, and between the monitor photodiode and digital photodiode, satisfies the electrical crosstalk level. These implant characteristics can be used for the design and fabrication of an optoelectronic SoC design, and expended to a mixed-mode SoC field.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.51-55
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• 2015

The present research is focused on the effect of porous graphite what is influenced on the 4H-SiC crystal growth by PVT method. We expect that it produces more C-rich and a change of temperature gradient for polytype stability of 4H-SiC crystal as adding the porous graphite in the growth cell. The SiC seeds and high purity SiC source materials were placed on opposite side in a sealed graphite crucible which was surrounded by graphite insulator. The growth temperature was around $2100{\sim}2300^{\circ}C$ and the growth pressure was 10~30 Torr of an argon pressure with 5~15 % nitrogen. 2 inch $4^{\circ}$ off-axis 4H-SiC with C-face (000-1) was used as a seed material. The porous graphite plate was inserted on SiC powder source to produce a more C-rich for polytype stability of 4H-SiC crystal and uniform radial temperature gradient. While in case of the conventional crucible, various polytypes such as 6H-, 15R-SiC were observed on SiC wafers, only 4H-SiC polytype was observed on SiC wafers prepared in porous graphite inserted crucible. The defect level such as MP and EP density of SiC crystal grown in the conventional crucible was observed to be higher than that of porous graphite inserted crucible. The better crystal quality of SiC grown using porous graphite plate was also confirmed by rocking curve measurement and Raman spectra analysis.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.419-426
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• 2001

The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.1
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• pp.61-66
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• 2012

Chemical Mechanical Planarization (CMP) is a polishing process used in the microelectronic fabrication industries to achieve a globally planar wafer surface for the manufacturing of integrated circuits. Pad conditioning plays an important role in the CMP process to maintain a material removal rate (MRR) and its uniformity. For metal CMP process, highly acidic slurry containing strong oxidizer is being used. It would affect the conditioner surface which normally made of metal such as Nickel and its alloy. If conditioner surface is corroded, diamonds on the conditioner surface would be fallen out from the surface. Because of this phenomenon, not only life time of conditioners is decreased, but also more scratches are generated. To protect the conditioners from corrosion, thin organic film deposition on the metal surface is suggested without requiring current conditioner manufacturing process. To prepare the anti-corrosion film on metal conditioner surface, vapor SAM (self-assembled monolayer) and FC (Fluorocarbon) -CVD (SRN-504, Sorona, Korea) films were prepared on both nickel and nickel alloy surfaces. Vapor SAM method was used for SAM deposition using both Dodecanethiol (DT) and Perfluoroctyltrichloro silane (FOTS). FC films were prepared in different thickness of 10 nm, 50 nm and 100 nm on conditioner surfaces. Electrochemical analysis such as potentiodynamic polarization and impedance, and contact angle measurements were carried out to evaluate the coating characteristics. Impedance data was analyzed by an electrical equivalent circuit model. The observed contact angle is higher than 90o after thin film deposition, which confirms that the coatings deposited on the surfaces are densely packed. The results of potentiodynamic polarization and the impedance show that modified surfaces have better performance than bare metal surfaces which could be applied to increase the life time and reliability of conditioner during W CMP.

• Journal of Oral Medicine and Pain
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• v.30 no.1
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• pp.69-77
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• 2005

The purposes of this study were to develop and introduce a novel intraoral appliance for bruxism composed of power switch and biofeedback device and further to examine inter- and intra-reliability of the appliance prior to clinical tests. The newly-developed appliance consisted of detection sensors, a central processing unit (CPU), a reactor and a storage unit and a displayer. Compact-sized, waterproof switches were selected as bruxism detection sensor and any sensor activation by clenching or grinding event was processed at the CPU and transmitted, by radio wave, to the reactor and storage unit and triggered auditory or vibratory signal, subsequently producing biofeedback to the patient with bruxism. The data on bruxing event in the storage unit can be displayed on the computer, making it possible analyzing frequency, duration and nature of bruxism. Cast models were obtained from ten volunteers with normal occlusion to evaluate reliability of the appliances. For inter-operator reliability on the intraoral appliances, each operator of the two fabricated the appliance for the same subject and compared the minimal contact forces provoking auditory biofeedback reaction in vertical, lateral and central directions. Intra-operator reliability was also investigated on the appliances made by a single operator at two separate times with an interval of two days. Conclusively, the newly-developed appliance is compact and safe to use in oral circumstance and easy to make. Furthermore, it had to be proven reliability excellent enough to apply in clinical settings. Thus, it is assumed that this appliance with the processor and the storage of data and auditory or vibratory biofeedback function is available and useful to analyze and control bruxism.

• Korean Journal of Heritage: History & Science
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• v.55 no.1
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• pp.199-222
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• 2022

It has been 100 years since the excavation of Geumgwanchong (Gold Crown Tomb), a tomb that was accidentally discovered in Noseo-ri, Gyeongju at the end of September 1921 during Japanese colonial rule. Although it is known for its discovery, not only in the Korean Peninsula but also in Asia and beyond, the excavation report was published in Japanese and English by the Government-General of Korea in 1924 and 1928, three years after the excavation. TOMB "KINKANTSUKA" or THE GOLD CROWN TOMB at KEISHU, AND ITS TREASURES) was published as a series of books and picture books. The excavation report was prepared by Kosaku Hamada (濱田耕作), who was a member of the Ruins Investigation Committee of the Japanese Government-General of Korea (later became the President of Kyoto Imperial University, Kyoto, Japan), and Sueji Umehara (梅原末治), who was commissioned to investigate the remains of the Japanese Government-General of Korea. In this paper, the preface was written in July 1922, about half a year after the excavation of tombs, which was much earlier than the official reports, in the 'Korean and Chinese reading book (稿本 高等朝鮮語及漢文讀本 巻五)' by Hamada Kosaku (濱田耕作) for high school students in Korea, which was titled 'New Excavated Artifacts in Gyeongju (慶州의 新發掘品)' with a subtitle '絶大의 發見', a slightly awkward expression in Korean, but it means 'a very big discovery'. The meaning has been introduced as a single unit, emphasizing its significance in terms of the achievements of the excavation of Geumgwanchong, academic and archaeological discoveries, and cultural history in Korean language rather than Japanese language. Since the manuscript was written immediately after the excavation, the excitement as an archaeological researcher at the time of the excavation and expectations for future research can be read as it is. In this paper, I would like to introduce the voice of the excited field leader of the Japanese Government-General of Korea after the excavation of Geumgwanchong in 2022, the 100th anniversary of the writing. In addition, the process from the discovery of the tomb to the preparation of the report was summarized in one chronological table to make it easier to understand the series of flows.