• Journal of the Korean Ceramic Society
• /
• v.27 no.6
• /
• pp.799-807
• /
• 1990

In this study, effects of oxide additives on mechanical properties and microstructure of A1N and A1N polytype ceramics were investigated. Fine A1N powder was synthesized by nitriding alumiuim hydroxide prepared from Al-isopropoxide, at 1350$^{\circ}C$ for 10h in N2 atmosphere. By adding 3w/o Y2O3, 0.56w/o CaO, and 10w/o SiO2 to AlN powder, AlN and AlN polytype ceramics were prepared by hot-pressing under the pressure of 30 MPa at 1800$^{\circ}C$ for 1h. AlN ceramics with no additives formed considerable amount of AlON phase, while AlN ceramics doped with Y2O3 or CaO decreased AlON phase and formed Y-Al or Ca-Al oxide compound. AlN＋10w/o SiO2(＋3w/o Y2O3) composition produced AlON and AlN polytype compound having 21R as a major phase. Room temperature flexural strength of AlN ceramics with no additive was 246MPa, and room temperature flexural strength and critical temperature difference by thermal shock(ΔTc) of AlN ceramics dooped with Y2O3 or CaO were 532MPa/340$^{\circ}C$ and 423MPa/300$^{\circ}C$, respectively. Y2O3 and CaO used as sintering agent played roles of densification and oxygen removal of AlN ceramics, and affected grain growth/grain morphologies of AlN ceramics.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.192-192
• /
• 2013

본 연구에서는 RF/DC 마그네트론 스퍼터링 시스템을 이용하여co-sputtering 방법으로 성장시킨 고이동도를 갖는Ge-doped $In_2O_3$In2O3 (IGO) 박막의 전기적, 광학적, 구조적 특성을 평가하고, 이를 유기태양전지와 유기발광다이오드에 적용함으로써 고이동도 IGO 투명전극의 소자 적용가능성을 타진하였다. GeO2 타겟에 인가되는 도핑 Power와 급속열처리 온도가 30 W, $500^{\circ}C$일 때, 최적화 된 IGO 박막으로부터 $2.8{\times}10^{-4}$ Ohm-cm의 낮은 비저항과 86.9% (550 nm)의 높은 투과도를 확보하였다. 뿐만 아니라 Near Infra-red (750~1,200 nm) 영역에서의 IGO투명전극의 광투과율이 결정질의 ITO보다 높은(약15%) 투과도를 보이는 것을 통해 IGO박막의 높은 LAS (Lewis Acid Strength) 값을 가지는 Ge 원소의 도핑이 NIR 영역의 광투과율 향상에 미치는 영향을 확인할 수 있었다. 최적 조건의 IGO 박막을 적용하여 Fill Factor 67.38%, Short circuit current density 8.43 mA/cm2, open circuit voltage 0.60 V, efficiency 3.44%의 유기태양전지 및 19.24%의 외부양자효율을 갖는 유기발광다이오드를 제작함으로써 결정질 ITO 전극(20.05%)을 대체할 수 있는 고투과, 고이동도 IGO 투명 전극 및 이를 이용한 광전소자 적용 가능성을 타진하였다.

• Journal of Powder Materials
• /
• v.6 no.4
• /
• pp.294-300
• /
• 1999

This study was carried out to investigate the possibility whether Metal Injection Molding (MIM) process could be applied to 95wt.%W-3.5wt.%Ni-1.5wt.%Fe heavy alloy in order to obtain an intricate shape. Methylcellulose was used in the injection molding for binder. $FeCl_2-4H_2O$ was added in solvent substituting Fe powder and $FeCl_2$ was doped on W-Ni premixed powder. When $FeCl_2-4H_2O$ was added in solvent, the binder separation occurred for injection molding so that the matrix content was changed. Such problem was solved when $FeCl_2$ was doped. In this study. the debinding process did not affect residual carbon content. The sintered microsouctures as addition methods of Fe element and the sintering temperature from $1420^{\circ}C$ to $1470^{\circ}C$, which are around the temperature of liquid phase formation, were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.49-49
• /
• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

• Journal of the Korean Ceramic Society
• /
• v.56 no.1
• /
• pp.84-90
• /
• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

• The Korean Journal of Ceramics
• /
• v.4 no.4
• /
• pp.297-303
• /
• 1998

The effect of aliovalent dopants, $ Nb_2O_5$ and MnO, on the phase stability of 12 mol% ceria partially-stabilized zirconia (Ce-TZP) polycrystals was studied. Both dopants (MnO and $ Nb_2O_5$) significantly increased the stability of the tetragonal zirconia phase (Mb temperature lower than liquid nitrogen temperature). The enhancement of the stability of the tetragonal phase in Ce-TZP doped with 1 mol% of Mno(Ce-TZP/MnO) andCe-TZP doped with 1 mol% of $ Nb_2O_5$(Ce-TZP/$ Nb_2O_5$) were explained by the significant reduction of the driving force, -${\Delta}$Gchem, for the tetragonal-to-mono-clinic phase transformation caused by the addition of MnO and $ Nb_2O_5$. The enhanced stability of the tetragonal phase in the Ce-TZP and Al2O3 composite (Ce-TZP/$Al_2O_3$) is believed to be caused by smaller grain size, moderate reduction in the chemical driving force and increase in the strain energy barrier to the transformation. Mechanical properties of the Ce-TZP and the Ce-TZP/$Al_2O_3$ with (i) the same grain size and (ii) the same Mb temperature were examined by measuring stress-strain behavior in 3 point bending. The Ce-TZP/$Al_2O_3$ composite doped with 1.3w% MnO (Ce-TZP/$Al_2O_3$/MnO), which had the same grain size as the Ce-TZP and De-TZP/$Al_2O_3$ showed more transformation plasticity than either the Ce-TZP or the Ce-TZP/$Al_2O_3$ composite. The Ce-TZP wihch had the same Mb temperature as that of the Ce-TZP/$Al_2O_3$/MnO did not show any transformation plasticity.

• Journal of Magnetics
• /
• v.8 no.4
• /
• pp.142-145
• /
• 2003

Valence states and electronic structures of Cr-doped $Nd_{1/2}A_{1/2}Mn_{1-y}Cr_{y}O_3$(NAMO; A=Ca, Sr) manganites have been investigated using x-ray absorption spectroscopy (XAS) and high-resolution photoemission spectroscopy (PES). All the Cr-doped NAMO systems exhibit the clear metallic Fermi edges in the Mn $e_{g}$ PES spectra near $E_{F}$. The spectral intensity at $E_{F}$ is higher for Cr-doped N $d_{l}$ 2/S $r_{l}$ 2/Mn $O_3$(NSMO) than for Cr-doped N $d_{l}$ 2/C $a_{l}$ 2/Mn $O_3$ (NCMO), reflecting the stronger metallic nature for NSMO than for NCMO. The measured Cr 2p XAS spectra are found to be very similar to that of C $r_2$ $O_3$, indicating that Cr ions in Cr-doped NAMO are in the trivalent C states ( $t^3$$_{2g}$). The Cr 2p XAS data are consistent with the Cr 3d PES spectra located at ∼1.3 eV below $E_{F}$ and having no emission near $E_{F}$.

• Journal of the Korean Society of Radiology
• /
• v.9 no.1
• /
• pp.39-45
• /
• 2015

$La_2W_3O_{12}:Eu^{3+}$ phosphors were prepared by solid state reaction method. The crystal structure was characterized by XRD pattern and ICSD card (78180). Luminescence properties of $La_2W_3O_{12}:Eu^{3+}$ are investigated by optical and laser-excitation spectroscopy in which emission and excitation spectra and time-resolved spectra are measured. The 1 mol % $Eu^{3+}$-doped $La_2W_3O_{12}$ phosphor exhibits broad excitation band peaking at 286 nm due to the ligand-to-metal charge transfer transition. The excitation lines due to the $^7F_0{\rightarrow}{^5D_4},{^5D_4},{^5L_6},{^5G_4},{^5D_3},{^5D_2}$ transitions of $Eu^{3+}$ are observed in the wavelength region 350-500 nm. The strong line emission is observed at 618 nm corresponding to the due to the $^5D_0{\rightarrow}^7F_2$ transition. The lifetime of 618 nm emission decreases with increasing temperature as 7 K ($114{\mu}s$), 100 K ($94{\mu}s$), 200 K ($10{\mu}s$) and 300 K ($0.5{\mu}s$).

• Nuclear Engineering and Technology
• /
• v.33 no.3
• /
• pp.307-314
• /
• 2001

The changes of weight gain, structure, morphology and uranium oxidation states in l0wt% G $d_2$ $O_3$-doped U $O_2$ during the oxidation below 475$^{\circ}C$ and heat treatment at 130$0^{\circ}C$ in air were investigated using TGA, XRD, SEM, EPMA and XPS. The room temperature ( $U_{0.86}$G $d_{0.14}$) $O_2$Cubic Phase Converted to highly distorted ( $U_{0.86}$G $d_{0.14}$)$_3$ $O_{8}$ -type sing1e Phase by oxidation at 475 $^{\circ}C$ in air. This oxidized phase was reduced by annealing at 130$0^{\circ}C$ in air. The room temperature XRD pattern of the 130$0^{\circ}C$ annealed powder revealed that ( $U_{0.86}$G $d_{0.14}$)$_3$ $O_{8}$ -type single phase was separated into Gd-depleted $U_3$ $O_{8}$ and Gd-enriched ( $U_{0.7}$G $d_{0.3}$) $O_2$$_{+x}$ type cubic phase. The reduction and phase separation by the high temperature annealing of kinetically metastable and highly deformed ( $U_{0.86}$G $d_{0.14}$)$_3$ $O_{8}$ -type phase are interpreted in terms of cation size difference between G $d^3$$^{+}$ and U according to the oxidation state of U.U.U.U.U.te of U.U.U.U.U.

• Journal of the Microelectronics and Packaging Society
• /
• v.17 no.1
• /
• pp.19-24
• /
• 2010

The effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films on PET substrate were studied. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PET substrate and the GZO film, $O_2$ plasma pretreatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the crystallinity increased and the contact angle decreased significantly. When the RF power was 100 W and the treatment time was 600 sec in $O_2$ plasma pretreatment process, the resistivity of GZO films on the PET substrate was $1.90{\times}10^{-3}{\Omega}-cm$.