• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.1
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• pp.50-55
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• 2008

In this paper, New LC VCO with $8{\sim}10.9$ GHz Band has been designed using commercial $0.35-{\mu}m$ CMOS technology. This proposed circuit is consisted of the parallel construction of the typical NMOS and PMOS cross-coupled pair which is based on the LC tank, MOS cross-coupled pair which has same tail current of complementary NMOS and PMOS, and output buffer. The designed LC VCO, which is according to proposed structure in this paper, takes a 29% improvement of the wide tuning range as 8 GHz to 10.9 GHz, and a 6.48mW of low power dissipation. Its core size is $270{\mu}m{\times}340{\mu}m$ and its phase noise is as -117dBc Hz and -137dBc Hz at 1-MHz and 10-MHz offset, respectively. FOM of the new proposed LC VCO gets -189dBc/Hz at a 1-MHz offset from a 10GHz center frequency. This design is very useful for the 10Gb/s clock generator and data recovery integrated circuit(IC) and SONET communication applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.522-525
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• 2018

In this paper, we design a UWB / WAS microstrip antenna for wireless local high - speed communication. The substrate of the proposed antenna is FR-4 (er = 4.3) and its size is $30[mm]{\times}30[mm]$. It is designed to have characteristics that can be used in the frequency bands of 3.5 [GHz] and 5.2 [GHz], which are UWB / WAS frequency bands. The simulation was performed using CST Microwave Studio 2014. Simulation results show that the gain is 1.592 [dBi] at 3.5 [GHz] and 2.210 [dBi] at 5.2 [GHz]. The S-parameter also showed a result of less than -10 [dB] (WSWR 2: 1) in the desired frequency band. Microstrip antennas have been miniaturized, high performance, and light weight, and excellent and low cost systems are continuously being developed. In addition, many people use wireless local area network systems used in homes, companies, and public facilities. Since the UWB / WAS technology is proposed according to the development of the system and the demand increase, the antenna that satisfies the above conditions will be designed and the technology applicable to the system will be used more conveniently.

• Journal of the Korean Solar Energy Society
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• v.25 no.4
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• pp.1-11
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• 2005

The stoichiometric mixture of evaporating materials for the $CuInSe_2$ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuInSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.783\;{\AA}$ and $11.621\;{\AA}$, respectively. To obtain the $CuInSe_2$ single crystal thin film, $CuInSe_2$ mixed crystal was deposited on throughly etched GaAs(100) by the HWE(Hot Wall Epitaxy) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$ respectively. The crystalline structure of $CuInSe_2$ single crystal thin film was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.1851\;eV-(8.99{\times}10^{-4}\;eV/K)T^2/(T+153\;K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $n-CdS/p-CuGaSe_2$ heterojunction solar cells under $80\;mW/cm^2$ illumination were found to be 0.51V, $29.3\;mA/cm^2$, 0.76 and 14.3 %, respectively.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.25-36
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• 2018

The stoichiometric mixture of evaporating materials for the $CaAl_2Se_4$: Co single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CaAl_2Se_4$, it was found orthorhomic structure whose lattice constant $a_0$, $b_0$ and $c_0$ were 6.4818, $11.1310{\AA}$ and $11.2443{\AA}$, respectively. To obtain the $CaAl_2Se_4$: Co single crystal thin film, $CaAl_2Se_4$: Co mixed crystal was deposited on throughly etched Si (100) by the HWE (Hot Wall Epitaxy) system. The source and substrate temperature were $600^{\circ}C$ and $440^{\circ}C$ respectively. The crystalline structure of $CaAl_2Se_4$: Co single crystal thin film was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of Van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the $CaAl_2Se_4$: Co obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.8239eV-(4.9823{\times}10^{-3}eV/K)T_2/(T+559K)$. The open-circuit voltage, short current density, fill factor, and conversion efficiency of $p-Si/p-CaAl_2Se_4$: Co heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.42 V, $25.3mA/cm^2$, 0.75 and 9.96%, respectively.

• Korean Journal of Crystallography
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• v.8 no.1
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• pp.48-58
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• 1997

[ $CuInTe_2$ ] synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of $CuInTe_2$ were grown with the vertical Bridgman technique. The photoconductivity and photoluminescence of the crystals were measured in the temperature range 20 to 293 K. From the photocurrent peaks measured for the samples both perpendicular and parallel to c-axis, the energy band gaps of the samples were found to be 0.948 eV and 0.952 eV at room temperature respectively. The energy difference of the photocurrent and photoluminescence peaks of the samples both perpendicular and parallel to the c-axis measured at room temperature was a phonon energy, and its values were 22.12 meV and 21.4 meV respectively. The splitting of the valence band due to spin-orbit and crystal field interaction was calculated from the photocurrent spectra of the samples, The ${\Delta}cr\;and\;{\Delta}so$ are 0.046,0.014 eV respectively.

• Journal of Practical Agriculture & Fisheries Research
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• v.23 no.1
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• pp.59-66
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• 2021

This study aimed to a basic research for the development of dye-sensitized solar cells that the wavelength band required for crop growth is passed, and the wavelength band that is not necessary for crop growth can be used for the generation of electricity. The transmissivity according to the illuminance was about 10% higher in the Blue filter and the Green filter than in the Red filter, but the transmissivity according to the PPFD was about 10% higher in the Red filter and the Blue filter than in the Green filter. In addition, the greenhouse attached with 30% infrared blocking filter was predicted to have a lower air temperature than other greenhouses, but it was investigated that there was no significant difference. Therefore, it was investigated that the application of the infrared cut filter would not be appropriate in a greenhouse that controls the temperature by opening a window. As a result of investigating, it was found that the Green and Blue filter greenhouses had the severe overgrowth and the stems grew weaker. The fresh weight of paprika in the infrared blocking filter greenhouse was the highest at 678.9g, and the growth of Red filter and the control greenhouses was relatively poor. Photosynthetic rate, amount of transpiration, and stomatal conductivity were the infrared blocking filter and control greenhouse higher than others. On the other hand, the water use efficiency did not show a big difference.

• Korean Journal of Optics and Photonics
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• v.24 no.1
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• pp.1-8
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• 2013

In this paper, we report design, fabrication and characterization of the WBRM (Wide Band Receiver Module) for LADAR (LAser Detection And Ranging) application. The WBRM has been designed and fabricated using self-made APD (Avalanche Photodiode) and TIA (Trans-impedance Amplifier). The APD and TIA chips have been integrated on 12-pin TO8 header using self-made ceramic submount and circuit. The WBRM module showed 450 ps of rise time, and corresponding 780 MHz bandwidth. Furthermore, it showed very low output noise less than 0.8 mV, and higher SNR than 15 for 150 nW of MDS(Minimum Detectable Signal). To the author's knowledge, this is the best performance of an optical receiver module for LIDAR fabricated by 200 um InGaAs APD.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.13 no.3
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• pp.63-69
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• 2013

This paper related with the performance of SE-MMA (Signed-Error MMA) that is the reduction of computational operation number in algorithm than MMA blind eualization algorithm which are possible to elimination of intersymbol interferance in the band limited and time dispersive nonlinear communication channel. In MMA algorithm which are possible to reduction of amplitude and phase rotation by intersymbol interference that is occurred in channel without using the training sequence, it uses the error signal that is the difference of the equalizer output and constant modulus, the statisticlly characteristic of transmitted signal. But in SE-MMA, it uses the polarity of the error signal, then it is possible to reduce the updating the tap coefficient and to simplify the H/W implementation. The computer simulation were performed in order to compare the performance of SE-MMA and conventional MMA algorithm. For this, the recovered signal constellation that is the output of the equalizer, the convergence performance by MSE, MD (maximum distortion) and residual isi characteristic learning curve, SER were used. As a result of simulation, the SE-MMA has more fast convergence speed than the MMA. But in the other index after reaching the seady state, it gives more worst performance values in the used index.

• Journal of the Korean Institute of Intelligent Systems
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• v.18 no.5
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• pp.724-729
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• 2008

This paper presents the calculation of the required bandwidth of common frequency bandwidth applying queueing theory for maximizing the efficiency of frequency resource of WPAN(Wireless Personal Area Network) based Digital acoustic and communication devices. It assumed that LBT device(ZigBee) and FH devices (DCP, RFID and Bluetooth) coexist in the common frequency band for WPAN based Digital acoustic and communication devices. Frequency hopping (FH) and listen before talk (LBT) have been used for interference avoidance in the short range device (SRD). The LBT system transmits data after searching for usable frequency bandwidth in the radio wave environment. However, the FH system transmits data without searching for usable frequency bandwidth. The queuing theory is employed to model the FH and LBT system, respectively. As a result, the throughput for each channel was analyzed by processing the usage frequency and the interval of service time for each channel statistically. When common frequency bandwidth is shared with SRD using 250mW, it was known that about 35 channels were required at the condition of throughput 84%, which was determined with the input condition of Gaussian distribution implying safety communication. Therefore, the common frequency bandwidth is estimated with multiplying the number of channel by the bandwidth per channel. These methodology will be useful for the efficient usage of frequency bandwidth.

• Journal of Hydrogen and New Energy
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• v.10 no.1
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• pp.59-69
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• 1999

AlN thin films were fabricated by reactive sputtering for the application of MIS devices with Al/AlN/Si structure. It has investigated the surface morphology change, I-V characteristics, C-V characteristics, and chemical composition of AlN films with the intriducing time of hydrogen on the fixed deposition condition(RF power: 150W, sputtering pressure: 5mTorr, flow rate ratio of $Ar/N_2=1$, hydrogen concentration: 5%). By addition of the hydrogen the deposition rate decreased drastically whereas the surface morphology changed little. It has been found from the analysis of I-V and C-V characteristics curves that the films deposited with hydrogen addition in initial stage had lower leakage current density, lower flat band voltage and hystersis profile when compared with those with hydrogen addition in last stage. The oxygen concentration in AlN films decreased with addition of hydrogen gas, which suggesting a profitable role in the insulation and C-V characteristics of AlN films.