• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05b
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• pp.54-56
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• 2001

The $SiH_4$ soak step is widely used during the CVD Tungsten(W) plug deposition process on the Ti/TiN barrier metal to prevent the $WF_6$ attack to the underlayer metal. We tried to reduce or skip the time of $SiH_4$ soak process to optimize W-plug deposition process on Via. The electrical characteristics including Via resistance and the structure of W film are affected according to $SiH_4$ soak time. The elimination possibility of $SiH_4$ soak process was confirmed in the case of that the CVD W film grows on the stable Ti/TiN underlayer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.33-36
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• 2003

Tungsten is widely used as a plug for the multi-level interconnection structures. However, due to the poor adhesive properties of tungsten (W) on $SiO_2$ layer, the Ti/TiN barrier layer is usually deposited onto $SiO_2$ for increasing adhesion ability with W film. Generally, for the W-CMP (chemical mechanical polishing) process, the passivation layer on the tungsten surface during CMP plays an important role. In this paper, the effect of oxidants controlling the polishing selectivity of W/Ti/TiN layer were investigated. The alumina $(Al_2O_3)$ abrasive containing slurry with 5 % $H_2O_2$ as the oxidizer, was studied. As our preliminary experimental results, very low removal rates were observed for the case of no-oxidant slurry. This low removal rate is only due to the mechanical abrasive force. However, for Ti and TiN with 5 % $H_2O_2$ oxidizer, different removal rate was observed. The removal mechanism of Ti during CMP is mainly due to mechanical abrasive, whereas for TiN, it is due to the formation of metastable soluble peroxide complex.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.318-321
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• 2000

We showed that the change of Ar to $N_2$flow during the TiN deposition by the reactive sputtering decides the crystallinity of LPCVD W, as well as the electrical properties of the W-TiN/SiO$_2$Si capacitor. In particular, the threshold voltage can be controlled by the Ar to $N_2$ratio. As compared to the results obtained from the LPCVD W/SiO$_2$/Si MOS capacitor, the insertion of approximately 50 nm TiN film effectively prohibits the fluorine diffusion during the deposition and annealing of W films, resulting in negligible leakage currents at the low electric fields.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.57-64
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• 1999

The electrical conductivity of TiO$_2$ doped with 0.05~1.5mol% WO$_3$ was measured in the oxygen partial pressure range of 10\ulcorner~10\ulcorner atm and temperature range of 1100~130$0^{\circ}C$ to investigate the defect types and the electrical properties. The grain size and density were increased as the liquid phase was formed by the doped WO$_3$. The secondary phase and WO$_3$peaks at the sample doped up to 4.0 mol% were not detected from the XRD results. The data(log$\sigma$/logPo$_2$) over 110$0^{\circ}C$ were divided into the four regions. From these experimental results, we proposed the following defect regions. 1) Magneli phase(extended defect), 2) Reduced rutile region which is similar to the behavior of undoped rutile, 3) Nearly stoichiometric Ti\ulcornerW\ulcornerO$_2$region in which extra charge of W\ulcorner cation is expected to be compensated by an electron, 4) Overstoichiometric Ti\ulcornerW\ulcornerO\ulcorner region which is a metal deficiency not to be observed in pure TiO$_2$. The electrical conductivity of w-doped TiO$_2$ was influenced by the measuring temperature, oxygen partial pressure, and the dopig content.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.282-287
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• 1995

We have studied the characteristics of a cw Ti:sapphire laser pumped by an Ar-ion laser. Ti:sapphire is one of the most attractive materials for the generation of ultra-short pulses because of its very broad gain bandwidth. We used a 4.1 mm thick, 0.15 wt. % $Ti^{3+}$ -doped, Brewster-angled Ti:sapphire crystal and made a folded cavity to create a strong focusing mode. The folding angle of the cavity was adjusted to $15.4^{\circ}$ to compensate for the astigmatism from the Brewster-angled Ti:sapphire crystal. 5 WAr-ion laser was used as a pumping source. We observed that the Ti:sapphire cw output power was sensitively changed with respect to the condition of the folded cavity. The threshold pumping power was 2 Wand the slope efficiency was 16% when an output coupler of 10% transmission was used. The maximum output power was more than 450 mW at 5 W pumping. mping.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.97.2-97.2
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• 2018

This study formed a hard TiAlSiWN coating layer using Ti, Al, Si and W raw powders that were mechanically alloyed and refined. The TiAlSi and TiAlSiW coating targets were fabricated using a single PCAS process in a short time with the optimal sintering conditions. The coating targets were deposited on the WC substrate by forming coating layers using TiAlSiN and TiAlSiWN nitride nano-composite structures with an AIP process. The properties of the nitride nano-composite coating layers were compared according to the addition of W. The microstructure of the nitride nano-composite coating layer was analyzed, focusing on the distribution of the crystalline phases, amorphous phases ($Si_3N_4$), and growth orientation of the columnar crystal depending on the addition of W. The mechanical properties of the coating layers were exhibited a hardness of approximately $3,000kg/mm^2$ and adhesion of about 117.77N in the TiAlSiN. In particular, the TiAlSiWN showed excellent properties with a hardness of more than $4,300kg/mm^2$ and an adhesion of about 181.47N.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.99-99
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• 2013

나노결정질 다이아몬드(Nanocrystalline Diamond: NCD) 박막은 고경도와 낮은 마찰계수를 가지고 있어 초경합금이나 고속도강과 같은 절삭공구 위에 코팅하여 공구의 성능 향상을 도모하려는 노력이 있어 왔다. 그러나 NCD 박막의 잔류응력이 크고, 초경합금과 철계 금속에 NCD가 증착되지 않는다는 문제점이 있다. 따라서 잔류응력 완화와 다이아몬드 핵생성을 위하여 제3의 중간층 재료가 필요하다. 본 연구에서는 W과 Ti을 중간층으로 하여 초경합금(WC-Co)과 고속도강(SKH51)에 NCD 박막을 코팅하고 기계적 특성을 비교하였다. 초경합금 또는 고속도강기판 위에 W 또는 Ti 중간층을 DC magnetron sputter를 이용해 각 1 ${\mu}m$의 두께로 증착하고 그 위에 MPCVD (Microwave Plasma Chemical Vapor Deposition)를 이용해 NCD 박막을 2${\mu}m$의 두께로 코팅하였다. FESEM을 이용하여 표면과 단면의 형상을 관찰하였고, XRD와 Raman spectroscopy를 통해 NCD 박막의 결정성을 확인하였다. 그리고 tribology test를 실시하여 코팅된 박막의 내마모성을 비교하였으며, Rockwell C indentation test를 이용하여 밀착력을 비교하였다. 초경합금에 적용 시, W이 Ti보다 중간층으로서 더 우수한 것으로 나타났으며 이는 열팽창계수 차이에 의한 잔류응력의 차이에 의한 것으로 여겨진다. 중간층 두께에 따른 박막의 기계적 특성 변화를 알아보기 위해 W 중간층의 두께를 1, 2, 4 ${\mu}m$로 변화를 주었다. 중간층 두께가 2 ${\mu}m$ 이상일 때 박막의 밀착력이 증가되는 것으로 나타났다. 고속도강 위에 같은 방법으로 1 ${\mu}m$의 W 또는 Ti 중간층 위에 2 ${\mu}m$의 NCD 박막을 코팅한 시편들은 초경합금에 코팅한 것과 달리 두 시편 모두 낮은 밀착력을 나타내었다. 열팽창계수 차이에 의한 잔류응력을 완화하기 위해 고속도강에 W/Ti 복합박막을 중간층으로 Ti, W순으로 각각 1 ${\mu}m$ 두께로 증착 후 그 위에 NCD 박막을 2 ${\mu}m$ 두께로 코팅 한 후 특성을 비교하였다. Ti/W 복합 중간층 위에 코팅된 NCD 박막의 밀착력이 W 혹은 Ti 단일 중간층에 코팅된 박막에 비해 우수한 것으로 나타났다. 그러나 실제 공구에 적용하기에는 박막의 밀착력 개선이 요구되며 이를 위해서 더 연구가 필요하다.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1116-1122
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• 2010

Metal interconnections of multilayer Al/Ni and TiW/seed-Ni/Ni were formed on glass, and the adhesion strength and nanoindentation response of the composite layers were evaluated. The Al/Ni multilayer was formed by an anodic bonding of glass to Al and subsequent electroless plating of Ni, while the TiW/Ni multilayer was fabricated by sputter deposition of TiW and seed-Ni onto glass and electroless plating of Ni. Because of the diffusion of aluminum into glass during the anodic bonding, anodically bonded glass/Al joint exhibited greater interfacial strength than the sputtered glass/TiW one. The Al/Ni on glass also showed excellent resistance against delamination by bending deformation compared to the TiW/seed-Ni/Ni on glass. From the nanoindentation experiment of each metal layer on glass, it was found that the aluminum layer had extremely low hardness and elastic modulus similar to the glass substrate and played a beneficial role in the delamination resistance by lessening stress intensification at the joint. The indentation data of the multilayers also supported superior joint reliability of the Al/Ni to glass compared to that of the TiW/seed-Ni/Ni to glass.

• Explosives and Blasting
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• v.19 no.1
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• pp.101-110
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• 2001

Depleted uranium (DU) outperforms tungsten heavy alloys (WHA) by about 10%. Because of environmental and hence, political concerns, there is a need to improve WHA performance, in order to replace the DU penetrators. A technique of metal powder compaction by the detonation of an explosive has been applied to tungsten-titanium(W-Ti) powder materials that otherwise may be difficult to fabricate conventionally or have dissimilar, nonequilibrium, or unique me1astab1e substructures. However, the engineering properties of compacted materials are not widely reported and are little known especially for the "unique" composition of W-Ti alloy. To develop high-performance tungsten composites with superior ballistic attributes, it is necessary to understand, carefully document controlled experimental results, and develop basic computational models for potential composites with controlled microstructures. A detailed understanding and engineering application of W-Ti alloy can lead to the development of new structural design for engineering components and materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.406-407
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• 2006

This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (${\rho}_c$) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially, when the sample was annealed at $800^{\circ}$ for 30min., the lowest contact resistivity of $2.90{\times}10^{-5}{\Omega}cm^2$ was obtained due to the improved interfacial adhesion.