• 제목/요약/키워드: W-Ni

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Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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Magnetoresistive heads with dual exchange bias using $NiFe/TbCo/Si_3N_4$ thin films (자기 저항 헤드의 이중 자기 교환 바이어스를 위한 $NiFe/TbCo/Si_3N_4$ 박막제조)

  • 김영채;오장근;조순철
    • Journal of the Korean Magnetics Society
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    • v.4 no.3
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    • pp.239-243
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    • 1994
  • $NiFe/TbCo/Si_3N_4$ thin films were fabricated, which can be employed as dualOongitudinal and transverse) biased magnetoresistive elements utilizing surface magnetic exchange at the interface of NiFe/TbCo films. When Tb area percent was 36 % and substrate bias was not applied, magnetic exchange fields of 100~180 Oe were obtained. The thicknesses of NiFe, TbCo and $Si_3N_4$(Protective layer) were $470\;{\AA},\;2400\;{\AA}\;and\;600\;{\AA}$, respectively. Magnetoresistance ratio of 1.45 % was obtained using NiFe films fabricated with 1000 W power and 2.5 mTorr of Ar pressure. The MR ratio of microstructured elements was reduced to 1.31 % and the MR response curves were shown not to saturate due to demagnetizing fields of the elements. When elements were fabricated with $36^{\circ}$ of misalignment with respect to the exchange field direction using films having 150 Oe exchange field, MR response curve was shifted by 85 Oe, and the operating point of the device shifted to the linear region of the response. Also, the Barkhausen noise was eiminated due to longitudinal bias field originating from the exchange field.

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Study on anode in SOFC (SOFC 연료극의 전극특성)

  • Eom, S.W.;Kim, G.Y.;Moon, S.I.;Lim, H.C.;Lee, C.W.
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.404-405
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    • 1995
  • Solid Oxide Fuel Cell has advantage of high utility because of having high operation temperature. In case of anode, Ni and YSZ being widly used as anode start materials. But Ni can be sintered during operation because that its operation temperature is very high, so it cause to lower the cell performance. It is very important to control the ratio of Ni to YSZ. In this paper, we studed on characterization of anode by controlling the Ni-YSZ contents.

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$[Ni(dppe)_2]$의 합성 및 구조 (Synthesis and Structure of $[Ni(dppe)_2] (dppe=Ph_2PCH_2CH_2PPh_2)$)

  • Kim, Wan -Sung;Lee, Ji-Hwa;Lee, Soon W.
    • Korean Journal of Crystallography
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    • v.11 no.2
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    • pp.80-83
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    • 2000
  • Compound [Ni(P(OEt)3)4] (1) reacted with bis(diphenylphosphino)ethane (Ph2PCH2CH2Ph2, dppe) to give bis(bis(diphenylphosphine)ethane)nickel(0), [Ni(dppe)2] (2). Compound 2 was characterized by spectroscopy (1H-and 31P{1H}-NMR) and X-ray crystallography. Crystallographic data for 2: monoclinic space group P21/n, a=9.826(1)Å, b=21.167(2)Å, c=21.425(2)Å, β=91.957(9)°, Z=4, R(wR2)=0.0377(0.0882).

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Characteristics of a nonmagnetic preplating leadframe (비자성 선도금 리드프레임의 특성)

  • Lee, D.H.;Jang, T.S.;Kim, H.D.;Hong, S.S.;Lee, J.W.;Yang, H.W.
    • Proceedings of the KAIS Fall Conference
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    • 2006.11a
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    • pp.162-166
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    • 2006
  • 기존의 Ni PPF를 대신하여 새롭게 Cu-Sn 합금을 barrier층으로 적용한 PPF를 제조하여, 그 제반 특성들을 조사하였다. Cu-Sn 합금도금층은 기존의 Ni PPF와 마찬가지로 반도체 substrate로서 지녀야 할 열적 안정성을 충분히 확보할 수 있음을 알 수 있었다. 또한 기지층 및 보호층과의 계면간 밀착성이 Ni PPF보다 더 우수했으며, 미세한 결정립들이 균일하게 분포한 도금층 구조를 나타내어, 이들이 Ni PPF보다 구조적으로 더욱 안정할 것임을 예상할 수 있었다. 한편 강자성 거동을 보이는 Ni PPF와는 달리 Cu-Sn PPF는 완벽한 상자성 특성을 보여, 점차 고집적, 고밀도화 되어가는 반도체 패키지의 동작중 발생할 발열 및 신호간섭의 위험이 원천적으로 제거될 수 있음을 보였으며, solderability, bondability 등의 field 특성 또한 Ni PPF와 거의 비슷함을 알 수 있었다.

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A Study on Pd/Ni Mixed Metal Induced Lateral Crystallization (Pd와 Ni의 혼합물을 촉매로 이용한 금속 유도 측면 결정화에 관한 연구)

  • 최성희;윤여건;주승기
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.172-172
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    • 2003
  • It has been known that Pd-MILC shows much faster and lower temperature crystallization than Ni-MILC but it can not be put into practice due to the quality issue of thus fabricated poly crystals. In this study, addition of Pd into Ni-MILC has been attempted in order to take advantages of the Pd-MILC without sacrificing of the Ni-MILC TFTs. It turns out that when 5% of Pd has been added to Ni for MILC, MILC growth rate increases two - three times faster than pure Ni-MILC. The MILC growth rate shows monotonic increase with increase the amount of Pd in Ni up to 50%. Even when small amount of Pd was added to Ni like 5%, crystallization phenomenon already follows the way of Pd-MILC. The Poly-W thus fabricated shows lower leakage current than pure Ni-MILC TFT without losing any amount of on-current This fact is very important in low temperature poly-TFTs because MILC-TFTs, especially suffer from the relatively high leakage current

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$Llo{\rightarrow}Ni_5Al_3$ Transformation in Martensitic Ni-Al Alloys (NI-Al계 마르텐사이트 합금에서 $Llo{\rightarrow}Ni_5Al_3$ 변태)

  • Jee, K.K.;Song, S.Y.;Jang, W.Y.
    • Journal of the Korean Society for Heat Treatment
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    • v.15 no.2
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    • pp.65-69
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    • 2002
  • $Llo{\rightarrow}Ni_5Al_3$ reordering and related properties in Ni-Al alloys consisting of 64-65at%Ni are characterized by X-ray diffraction, shape memory effect and damping capacity. Formation of $Ni_5Al_3$ takes place by simple ordering of atoms with a continuous increase in c/a ratio. As a result, degradation of shape memory effect and damping capacity is observed after short time annealing at $200-300^{\circ}C$.

Development of textured Ni and Ni alloy(Ni-W and Ni-Cu) substrates for YBCO coated conductor (YBCO 박막선재용 Ni 및 Ni 합금 기판의 집합도 분석)

  • 지봉기;김민우;김찬중
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.10a
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    • pp.24-26
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    • 2003
  • We fabricated Ni and Ni alloy substrates for YBCO coated conductors. The Ni and Ni alloy substrate was fabricated by powder metallurgy technique and cold rolling. The texture of substrates had a strong 4-fold symmetry and [111]∥ND texture after annealing temperature of 100$0^{\circ}C$. The measured full-width half-maximum (FWHM) of in-plane and out-of-plane was in the range of 6$^{\circ}$-10$^{\circ}$. The powder metallurgy technique is fabrication of the substrates for considered to be suitable for the application of YBCO coated conductors.

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Vertical Growth of CNTs by Bias-assisted ICPHFCVD and their Field Emission Properties (DC Bias가 인가된 ICPHFCVD를 이용한 탄소나노튜브의 수직 배향과 전계방출 특성)

  • Kim, Kwang-Sik;Ryu, Ho-Jin;Jang, Gun-Eik
    • Journal of the Korean Ceramic Society
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    • v.39 no.2
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    • pp.171-177
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    • 2002
  • In this study, the vertical aligned carbon nanotubes was synthesized by DC bias-assisted Inductively Coupled Plasma Hot-Filament Chemical Vapor Deposition (ICPHFCVD). The substrate used CNTs growth was Ni(300 ${\AA}$)/Cr(200 ${\AA}$)-deposited one on glass by RF magnetron sputtering. R-F, DC bias and filament power during the growth process were 150 W, 80 W, 7∼8 A, respectively. The grown CNTs showed hollow structure and multi-wall CNTs. The top of grown CNT was found to Ni-tip that the CNT end showed to metaltip. The graphitization and field emission properties of grown was better than grown CNTs by ICPCVD. The turn-on voltage of CNT grown by DC bias-assisted ICPHFCVD showed about 3 V/${\mu}m$.