• Journal of the Korean Solar Energy Society
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• v.39 no.1
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• pp.33-40
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• 2019

Al-doped ZnO (AZO) thin films were synthesized on Si(100) wafers via plasma enhanced metal organic chemical vapor deposition (PE-MOCVD) method using diethyl zinc (DEZ) and N-methylpyrrolidine alane (MPA) as precursors. Effects of Al/Zn mixing ratio, plasma power on the surface morphology, crystal structure, and electrical property were investigated with SEM, XRD and 4-point probe measurement respectively. Growth rate of the film decreased slightly with increasing the Al/Zn mixing ratio, however electrical property was enhanced and resistivity of the film decreased greatly about 2 orders from $9.5{\times}10^{-1}$ to $8.0{\times}10^{-3}{\Omega}cm$ when the Al/Zn mixing ratio varied from 0 to 9 mol%. XRD analysis showed that the grain size increased with increasing the Al/Zn mixing ratio. Growth rate and electrical property were enhanced in a mild plasma condition. Resistivity of AZO film decreased down to $7.0{\times}10^{-4}{\Omega}cm$ at an indirect plasma of 100 W condition which was enough value to use for the transparent conducting oxide (TCO) material.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.109-112
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• 2008

The miniaturization of device size and submicron process causes serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Moreover, the interaction between Cu and Si is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Therefore it is necessary to implement a barrier layer between Cu and Si. So we study W-C-N diffusion barrier for prevent Cu diffusion as a function of $N_2$ gas flow and thermal stability. Especially, we also study the W-C-N diffusion barrier for analyzing the change of lattice constants.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.58-65
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• 2010

AlN thin films were deposited on sapphire substrates and ZnO templates by rf-magnetron sputtering. Powder-sintered AlN target was adopted for source material. Thickness of AlN layer was linearly dependent on plasma power from 50 to 110 W, and it decreased slightly when working pressure increased from 3 to 10 mTorr due to short mean free path of source material sputtered from AlN target by Ar working gas. When $N_2$ gas was mixed with Ar, the thickness of AlN layer decreased significantly because of low sputter yield of nitrogen. AlN layer was also deposited on ZnO template. However, it showed weak thermal stability that the interface between AlN and ZnO was deteriorated by rapid thermal annealing treatment above $700^{\circ}C$. In addition, ZnO layer was largely attacked by MOCVD ambient gas of hydrogen and ammonia around $700^{\circ}C$ through inferior AlN layer deposited by sputtering. And AlN layers were fully peeled off above $900^{\circ}C$.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.44-48
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• 2000

Amorphous $V_2O_5$ cathode thin films were prepared by DC-magnetron sputtering at room temperature and the thin film rechargeable lithium batteries were fabricated with the configuration of $V_2O_5/LIPON/Li$ using sequential ex-situ thin film deposition techniques. The electrochemical characteristics of $V_2O_5$ cathode materials Prepared at 80/20 of $Ar/O_2$ ratio showed high capacity and cycling behaviors by half cell test. LIPON solid electrolytes films were prepared by RF-magnetron sputtering using the self-made $Li_3PO_4$ target in pure $N_2$ atmosphere, and it was very stable for lithium contact in the range of 1.2-4.0 V vs. Li. Metallic lithium were deposited on LIPON electrolyte by thermal evaporation methode in dry room. Vanadium oxide based full cell system showed the initial discharge capacity of $150{\mu}A/cm^2{\mu}m$ in the range of $1.2\~3.5V$.

• Progress in Superconductivity
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• v.14 no.1
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• pp.30-33
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• 2012

We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.75-75
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• 2001

Si₃N₄/SiO₂/Si₃N₄ 멤브레인에 의해 실리콘 기판으로부터 열차단된 비냉각 초전형 박막 (Ba,Sr)TiO₃ 적외선 검지기를 제작하고, 적외선 검지기의 특성을 논의하였다. 25℃의 공기중에서 쵸핑주파수가 1 ㎐일 때 적외선 검지기는 약 168.8 V/W의 비교적 높은 전압 감응도를 나타내었으나, 매우 작은 신호대잡음비 때문에 약 2.6×10⁴㎝·㎐/sup 1/2//W의 낮은 비검지도를 나타내었다. 또한 출력파형의 쵸핑주파수 및 온도 의존성에 대한 정성적인 해석으로부터 적외선 검지기의 열잡음전압 및 열시정수가 모두 상당히 크다는 것을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.17-20
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• 2000

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD's and micro-heaters on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to $SiO_2$ layer, The MgO layer improved adhesion of Pt thin-films to $SiO_2$ layer without any chemical reactions to Pt thin-films under high annealing temperatures. In investigating output characteristics of the fabricated micro-flowsensors, the output voltages increased as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at $N_2$ flow rate of 2000 seem/min, heating power of 1.2W.

• Korean Journal of Materials Research
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• v.13 no.6
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• pp.347-351
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• 2003

II-Ⅵ ZnO compound semiconductor thin films were grown on $\alpha$-Al$_2$O$_3$(0001) single crystal substrate by radical beam assisted molecular beam epitaxy and the optical properties were investigated. Zn(6N) was evaporated using Knudsen cell and O radical was assisted at the partial pressure of 1$\times$10$^{4}$ Torr and radical beam source of 250-450 W RF power. In $\theta$-2$\theta$ x-ray diffraction analysis, ZnO thin film with 500 nm thickness showed only ZnO(0002)and ZnO(0004) peaks is believed to be well grown along c-axis orientation. Photoluminescence (PL) measurement using He-Cd ($\lambda$=325 nm) laser is obtained in the temperature range of 9 K-300 K. At 9 K and 300 K, only near band edge (NBE) is observed and the FWHM's of PL peak of the ZnO deposited at 450 RF power are 45 meV and 145 meV respectively. From no observation of any weak deep level peak even at room temperature PL, the ZnO grains are regarded to contain very low defect density and impurity to cause the deep-level defects. The peak position of free exciton showed slightly red-shift as temperature was increased, and from this result the binding energy of free exciton can be experimentally determined as much as $58\pm$0.5 meV, which is very closed to that of ZnO bulk. By van der Pauw 4-point probe measurement, the grown ZnO is proved to be n-type with the electron concentration($n_{e}$ ) $1.69$\times$10^{18}$$cm^3$, mobility($\mu$) $-12.3\textrm{cm}^2$/Vㆍs, and resistivity($\rho$) 0.30 $\Omega$$\cdot$cm.

• Applied Chemistry for Engineering
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• v.7 no.6
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• pp.1078-1086
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• 1996

The peroxo-polytungstic acid was formed by the direct reaction of tungsten powder with the hydrogen peroxide solution. Peroxo-polytungstic powder were prepared by rotary evaporator using the fabricated on to ITO coated glass as substrate by dip-coating method using $2g/10mL(W-IPA/H_2O)$ sol solution. A substrate was dipped into the sol solution and after a meniscus had settled, the substrate was withdrawn at a constant rate of the 3mm/sec. Thicker layer could be built up by repeated dipping/post-treatment 15 times cycles. The layers dried at the temperature of $65{\sim}70^{\circ}C$ during the withdrawn process, and then tungsten oxides thin film was formed by final heating treatment at the temperature of $230{\sim}240^{\circ}C$ for 30min. A linear rotation between the thickness of thin film and the number of dipping/post-treatment cycles for tungsten oxides thin films made by dip-coating was found. The thickness of thin film had $60{\AA}$ after one dipping. From the patterns of XRD, the structure of tungsten oxides thin film identified as amorphous one and from the photographs of SEM, the defects and the moderate cracks were observed on the tungsten oxides thin film, but the homogeneous surface of thin films were mostly appeared. The electrochemical characteristic of the $ITO/WO_3$ thin film electrode were confirmed by the cyclic voltammetry and the cathodic Tafel polaization method. The coloring bleaching processes were clearly repeated up to several hundreds cycles by multiple cyclic voltammetry, but the dissolved phenomenon of thin film revealed in $H_2SO_4$ solution was observed due to the decrease of the current densities. The diffusion coefficient was calculated from irreversible Randles-Sevick equation from the data obtained by the cyclic voltammetry with various scan rates.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.691-697
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• 2000

$Al_xGa_{1-x}N$ thin layers are promising materials for optical devices in the UV regions. $Al_xGa_{1-x}N$ thin layers w were grown on sapphire substrates by metalorgaruc chemical vapor deposition (MOCVD). The molar Al fraction and crystallinity of layers were deduced from synchrotron x-ray scattering experiment. Surface morphology were investigated using SEM and SPM. $Al_xGa_{1-x}N$ layers crystallinity were related with undoped GaN crystallinity. The Al mole fraction of $Al_xGa_{1-x}N$ layers affect the surface morphology of $Al_xGa_{1-x}N$ layers. The surface morphology was rough­e ened and the cracks were obse$\pi$ed by increasing the Al mole fractions.