• 한국식품영양과학회지
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• 제23권4호
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• pp.540-540
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• 1994

이유기를 지난 웅성흰쥐를 대조식이 (C), 고지방식이 (HF) 및 고지방 고에너지식이 (HFHE) 로 4 주간 사양하고 일부를 희생시킨 후 , HF 군과 HFHE 군 일부에식이섬유 pectin 과 cellulose를 각각 첨가한 HF-P , HF-C, HFHE-P , HFHE-C 식이를 C, HF ,HFHE 식이와 함께 4 주간 더 사양한 후 희생시켜 체중증가량, 총 에너지섭취량, 총식이섭 취량, 식이효율, 간장과 비장의 무게, 혈중 지질의 성상 및 간세포에 미치는 영향을 비교 관 찰한 결과 체중증가는 C 군, HF 군, HFHE 군간의 유의적 차이는 없었으며, 식이섬유 첨가 시 모두 체중이 감소되었다. 총에너지 섭취량은 C 군이 가장 많았고, 식이효율은 HF-HE군 이 가장 높았으며, 식이섬유 첨가에 의해서는 영향을 받지 않았다. 간장의 무게는 C군 , HF 군, HFHE 군 모두 식이의 영향이 없었고, pectin 과 celulose 첨가에 의한 변화도 나타내지 않았다. 비장의 무게는 C군 보다 HF 군과 HFHE 군이 감소하였으나, pectin 과 cellulose 첨가에 의해서는 변화가 없었다. 혈중 총 지질, 총콜레스테롤, 중성지방 및 인지질의 함량은 각 실험군모두 실험기간이 경과함에 따라 증가되었으며, 특히 HFHE 군의 유의성있게 증가 하였고 pectin 과 cellulose를 첨가하였을때는 감소하였으며 pectin이 cellulose 보다 감소효 과가있다.

• 한국분말재료학회지
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• 제18권3호
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• pp.226-237
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• 2011

W-ZrC and W-HfC composite powders were fabricated by the Plasma Alloying & Spheroidization (PAS) method and the powders were sprayed into hybrid coating layers by using Low Vacuum Plasma Spray (LVPS) process, respectively. Microstructure, mechanical properties, and ablation characteristics of the fabricated coating layers were investigated. The LVPS process led to successful production of W-Carbide hybrid coatings, approximately 400 ${\mu}M$ or above in thickness. As the substrate preheating temperature increased from $870^{\circ}C$ to $917^{\circ}C$, the hardness of the W-ZrC coating layer increased due to decreased porosity. Vickers hardness showed higher value (about 108.4 HV) in W-ZrC hybrid coating material compared to that of W-HfC while adhesive strength was found to be similar in both coating layers. The plasma torch test revealed good ablation resistance of the W-Carbide hybrid coating layers. The relatively high performance W-ZrC coating layer at the elevated temperature is thought to be attributed to both the strengthening effect of ZrC particle remained in the layer and the formation of ZrO2 phase with high temperature stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• Journal of Nutrition and Health
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• 제27권2호
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• pp.119-126
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• 1994

The effect of diets(high fat, high fat high energy, pectin, cellulose) on adipocyte of epididymal fat pads were investigated in 70 male rats for 8 weeks. The rats were assigned to a control(C), high fat(HF) and high fat high energy(HFHE) group for 4 wks. During the next 4 wks, reassigned to one of three treatments (high fat, pectin supplemented, cellulose supplemented) in the HF group and one of three treatment (high fat high energy, pectin, cellulose) in the HFHE group. Therefore, the total experimental groups were 7 (C, HF, HF-P, HF-C, HFHE, HFHE-P, HFHE-C). Parameters evaluated and compared for each diet were body weight, total energy intake, feed efficiency ratio and weight changes in epididymal fat pads. The results are summarized as follows ; 1) There was no significant difference in body weight gain among the groups. 2) Total energy intake was higher in the C group than other groups. 3) Feed efficiency ratio (F.E.R) of the HF and HFHE groups were greater than C group(2, 4 weeks). However, there were no significant differences between the HF and HFHE groups. 4) Epididymal fat pads(EFP 100g/B.W) of the FH and HFHE groups were higher than C group (2, 4 weeks). However, there were no significant differences between the HF and HFHE groups. There was no significant difference in weight gain of epididymal fat pads among the groups(8 weeks). 5) Cell number and cell size of epididymal fat pads of the HF and HFHE groups were higher than the C group. The pectin and the cellulose supplementation groups decreased cell number and cell size of epididymal fat pads. Especially, the pectin supplementation group decreased than the cellulose supplementation in HFHE group. Therefore, we can concluded that the HF and the HFHE diet has no effect on the epididymal fat pads.

• 한국재료학회지
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• 제17권2호
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• pp.96-99
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• 2007

The effects of post-annealing of high-k $HfO_2$ thin films grown by atomic layer deposition method were investigated by the annealing treatments of $400-600^{\circ}C$. $Pt/HfO_2/p-Si\;MOS$ capacitor structures were fabricated, and then the capacitance-voltage and current-voltage characteristics were measured to analyze the electrical characteristics of dielectric layers. The X-ray diffraction analyses revealed that the $500^{\circ}C-annealed\;HfO_2$ film remained to be amorphous, and the $600^{\circ}C-annealed\;HfO_2$ film was crystallized. The annealing treatment at $500^{\circ}C$ resulted in the highest capacitance and the lowest leakage current due to the reduction of defects in the $HfO_2$ films and non-crystallization. Our results suggest that post-annealing treatments are a critical factor in improving the characteristics of gate dielectric layer.

• 한국표면공학회지
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• 제30권6호
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• pp.374-381
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• 1997

We have studied the effect of the interface between tungsten silicide and polysilicon the silicide reaction. The results showed that the cleaning of the silicon surface prior to the deposition of tungsten silicide affected the interface properties, thereby leading to the difference in the resistivity and surface morhpology of tungsten silicide. Compared with HF cleaning, the use of SCl cleaning yielded higher resistivity of tungsten silicide at the low anneal temperature (up to $900^{\circ}C$). However, furtherature to $1000^{\circ}C$ reduced the resistivity significantly, similar to that obtained with HF cleaning. It was also observed that the annealing of WSix/HF-cleaned poly-si allowed the formation of bucking weve (partially decohesion area) on the surface. In contrast, the use of SCl celaning did not produce the buckling waves on the surface. Also the presence of 200$\AA$ -thick TiW between tungsten silicide and HF-cleaned poly-Si effectively prevented the formation of the waves. However, high-temperature annealing of WSix/200A-TiW/Poly-Si allowed the excess silicon in tungsten silicide to precipitate inside the silcide, causing the slight increase of the resistivity after annealing at $1050^{\circ}C$.

• Nuclear Engineering and Technology
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• 제55권2호
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• pp.575-579
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• 2023

In this work, pure W and W-0.5wt%HfC alloy (WHC05) were fabricated by sintering and hot-rolling following the same processing route. After exposing to a high flux deuterium plasma irradiation with the D⁺ flux to three fluences of 6.00 × 10²⁴, 2.70 × 10²⁵ and 7.02 × 10²⁵ D/m², the evolution of surface morphology, deuterium retention and hardening behaviors in pure W and WHC05 has been studied. The SEM results show the formation of D blisters on the irradiated area, and with the increase of D implantation, the size of these blisters increases from 200 ~ 500 nm (2.70 × 10²⁵ D/m²) to 1 ~ 2 ㎛ (7.02 × 10²⁵ D/m²) in WHC05 and from 1 ~ 2 ㎛ (2.70 × 10²⁵ D/m²) to > 3 ㎛ (7.02 × 10²⁵ D/m²) in pure W, respectively. A higher D retention and obvious hardening are observed in pure W than that of the WHC05 alloy, indicating an improve radiation resistance in WHC05 compared to pure W.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.245.2-245.2
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• 2007

• 분석과학
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• 제15권1호
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• pp.15-19
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• 2002

텅스텐이 첨가된 $BaTiO_x$계 세라믹재료 중 Ba, Ti 및 W의 회수율을 증가시키기 위하여 가압 산 분해법을 이용하여 전처리하였다. $BaTiO_x$계 세라믹재료 시료를 가압 산 부내장치 내에서 HF : HCI ( 1 : 2 ) 혼합산을 가하여 $220^{\circ}C$에서 3시간동안 분해시킨 후 ICP-AES를 이용하여 Ba, Ti 및 W을 정량하였다. 그 결과 Ba는 99.6% Ti는 99.8% W는 99.2%의 회수율과 Ba는 1.02% Ti는 0.73% W는 1.79%의 C.V.값을 각각 얻었다. 이 전처리 방법을 실제시료에 적용하여 25.9% Ba38.8% Ti과 3.31% W 함량을 각각 구할수 있었다.

• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 2009년도 추계학술대회
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• pp.471-481
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• 2009

This study is deal with the high frequency induction hardening (HF at $850^{\circ}C$, 120kHz & 50kW condition) SM45C steel. (1) The HF specimen which was tempered at $150^{\circ}C$, did not appear any tempering effect. A brittle fracture occurred at rounded area of the tensile specimen. AE amplitude distribution showed between 45~60dB. (2) The HF specimen which was tempered at $300^{\circ}C$, slip and fracture occurred at the hole area of the tensile specimen. As it passes the yield point, the AE energy increased intermittently and AE amplitude distribution showed between 70~85dB. In addition, after the maximum tensile load, it showed high amplitude and energy distribution. The AE amplitude showed between 45~70dB. (3) The HF specimen which was tempered at $450^{\circ}C$, a brittle fracture occurred as if it is torn in the direction of $45^{\circ}$ on parallel area over the both sides of the tensile specimen, which led to several peak to be appeared in AE energy. It was found that the AE amplitude was relatively low and the AE energy was high.