Journal of the Korean institute of surface engineering (한국표면공학회지)
- Volume 30 Issue 6
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- Pages.374-381
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- 1997
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- 1225-8024(pISSN)
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- 2288-8403(eISSN)
Interface effects on the annealing behavior of tungsten silicide
텅스텐 실리사이드 열처리 거동에 미치는 계면 효과
Abstract
We have studied the effect of the interface between tungsten silicide and polysilicon the silicide reaction. The results showed that the cleaning of the silicon surface prior to the deposition of tungsten silicide affected the interface properties, thereby leading to the difference in the resistivity and surface morhpology of tungsten silicide. Compared with HF cleaning, the use of SCl cleaning yielded higher resistivity of tungsten silicide at the low anneal temperature (up to
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