• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.87-88
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• 2007

반도체 소자가 초고집적화 되어감에 따라 반도체 공정에서 선폭은 줄어들고 박막은 다층화 되어가고 있다. 이와 같은 제조 공정 하에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 이 논문에서는 Tungsten - Carbon - Nitrogen (W-C-N)에 Boron (B)을 첨가하였고, Boron 타겟 power을 조절하여 다양한 조성을 가지는 W-B-C-N 확산방지막을 제작하여 각 조성에 따른 증착률을 조서하였고 $1000^{\circ}C$까지 열처리하여 그 비저항을 측정하여 각 특성을 확인하였다.

• Korean Journal of Ecology and Environment
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• v.46 no.4
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• pp.581-587
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• 2013

The amounts of carbon (C), nitrogen (N) and phosphorus (P) in relation to dry weight (D.W.) were measured in zooplankton from the large four rivers (Han R., Geum R., Yeongsan R. and Seomjin R.) during 2004~2008. The stoichiometry of total zooplankton in four river systems was highly variable. The ranges of average C, N and P-contents were $70{\sim}620mgC\;mg^{-1}$ D.W., $7.1{\sim}85.5{\mu}gN\;mg^{-1}$ D.W. and $2.5{\sim}7.4{\mu}gP\;mg^{-1}$ D.W., respectively. The mean C :N: P atomic ratios reflected large spatial differences. The C : P and N : P ratios of the zooplankton community ranged from 38 to 392 : 1 and from 4 to 65 : 1 in all sampling sites. Self-Organizing Map (SOM) was applied to the survey data, and the study sites were clearly classified into 3 clusters. Clustering was largely affected by the distribution pattern of C, N, P-contents, which is related with characteristics of river systems on the basis of stoichiometry.

• BMB Reports
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• v.44 no.11
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• pp.747-752
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• 2011

To investigate the effects of disulphide bond position on the salt resistance and lipopolysaccharide (LPS)-neutralizing activity of ${\alpha}$-helical homo-dimeric antimicrobial peptides (AMPs), we synthesized an ${\alpha}$-helical model peptide ($K_6L_4W_1$) and its homo-dimeric peptides (di-$K_6L_4W_1$-N, di-$K_6L_4W_1$-M, and di-$K_6L_4W_1$-C) with a disulphide bond at the N-terminus, the central position, and the C-terminus of the molecules, respectively. Unlike $K_6L_4W_1$ and di-$K_6L_4W_1$-M, the antimicrobial activity of di-$K_6L_4W_1$-N and di-$K_6L_4W_1$-C was unaffected by 150 mM NaCl. Both di-$K_6L_4W_1$-N and di-$K_6L_4W_1$-C caused much greater inhibitory effects on nitric oxide (NO) release in LPS-induced mouse macrophage RAW 264.7 cells, compared to di-$K_6L_4W_1$-M. Taken together, our results indicate that the presence of a disulphide bond at the N- or C-terminus of the molecule, rather than at the central position, is more effective when designing salt-resistant ${\alpha}$-helical homo-dimeric AMPs with potent antimicrobial and LPS-neutralizing activities.

• Kyungpook Mathematical Journal
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• v.50 no.4
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• pp.545-556
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• 2010

A good amount of work has been done on degree of approximation of functions belonging to Lip${\alpha}$, Lip($\xi$(t),r) and W($L_r,\xi(t)$) and classes using Ces$\`{a}$ro, N$\"{o}$rlund and generalised N$\"{o}$rlund single summability methods by a number of researchers ([1], [10], [8], [6], [7], [2], [3], [4], [9]). But till now, nothing seems to have been done so far to obtain the degree of approximation of functions using (N,$p_n$)(C, 1) product summability method. Therefore the purpose of present paper is to establish two quite new theorems on degree of approximation of function $f\;\in\;Lip({\alpha},r)$ class and $f\;\in\;W(L_r,\;\xi(t))$ class by (N, $p_n$)(C, 1) product summability means of its Fourier series.

• Journal of Powder Materials
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• v.11 no.2
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• pp.165-170
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• 2004

Growth behavior of two different types of grains, faceted and rounded, in a liquid matrix has been studied in the (75WC-25TiCN)-30Co system. Powder samples were sintered above the eutectic temperature for various times under a carbon saturated condition. (Ti,W)(C,N) grains with a rounded shape and WC grains with a faceted shape coexisted in the same Co based liquid. With increasing sintering time, the average size of (Ti.W)(C,N) grains increased continuously and very large WC grains appeared. The growth of rounded (Ti,W)(C,N) grains followed a cubic law, r^3-r^3_0$=kt, where r is the average size of the grains, $r_0$ the initial average size, k the proportionality constant and t the sintering time. indicating a diffusion-controlled growth. On the other hand, the growth of the faceted WC grains resulted in a bimodal grain size distribution, showing an abnormal grain growth. These observations show that the growth behavior of different types of grains is governed by their shape, faceted or rounded, even in the same liquid matrix.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.123-123
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• 2000

선폭이 초미세화됨에 따라 게이트 전극에서의 공핍 현상 및 불순물 확산의 물제를 갖는 poly-Si 게이트를 대체할 전극 물질로 텅스텐(W)이 많이 연구되어 왔다. 반도체 소자의 배선물질로 일찍부터 사용되어온 텅스텐은 내화성 금속의 일종으로 용융점이 높고, 저항이 낮다. 그러나, 일반적으로 사용되고 있는 CVD에 의한 텅스텐의 증착은 반응가스(WF6)로부터 오는 불소(F)의 게이트 산화막내로의 확산으로 인해 MOS 소자가 크게 열화될수 있다. 본 연구에서는 W/TiN 이중 게이트 전극 구조를 갖는 MOS 캐패시터를 제작하여 전기적 특성을 살펴보았다. P-Type (100) Si위에 RTP를 이용, 85$0^{\circ}C$에서 110 의 열산화막을 성장 및 POA를 수행한 후, 반응성 스퍼터링법에 의해 상온, 6mTorr, N2/Ar=1/6 sccm, 100W 조건에서 TiN 박막을 150, 300, 500 의 3그룹으로 증착하였다. 그 위에 LPCVD 방법으로 35$0^{\circ}C$, 0.7Torr, WF6/SiH4/H2=5/5~10/500sccm 조건에서 2000~3000 의 텅스텐을 증착하였다. Photolithography 공정 및 습식 에칭을 통해 200$\mu\textrm{m}$$\times$200$\mu\textrm{m}$ 크기의 W/TiN 복층 게이트 MOSC를 제작하였다. W/TiN 복측 게이트 소자와 비교분석하기 위해 같은 조건의 산화막을 이용한 알루미늄(Al) 게이트, 텅스텐 게이트 MOSC를 제작하였다. 35$0^{\circ}C$에서 증착된 텅스텐 박막은 10~11$\Omega$/ 의 면저항을 가졌고 미소한 W(110) peak값을 나타내는 것으로 보아 비정질 상태에 가까웠다. TiN 박막의 경우 120~130$\Omega$/ 의 면저항을 가졌고 TiN (200)의 peak 값이 크게 나타난 반면, TiN(111) peak가 미소하게 나타났다. TiN 박막의 두께와 WF/SiH4의 가스비를 변화시켜가며 제작된 MOS 캐패시터를 HF 및 QS C-V, I-V 그리고 FNT를 통한 전자주입 방법을 이용하여 TiN 박막의 불소에 대한 확산 방지막 역할을 살펴 보았다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. W/TiN 게이트 MOS 소자는 모두 순수 텅스텐 게이트보다 우수하였고, Al 게이트와 유사한 전기적 특성을 보여주었다. TiN 박막이 300 , 500 이고 WF6/SiH4의 가스비가 5:10인 경우 소자 특성이 우수하였으나, 5:5의 경우에는 FNT 전자주입 특성이 열화되기 시작하였다. 그리고, TiN박막의 두께가 150 으로 얇아질 경우에는 WF6/SiH4의 가스비가 5:10인 경우에서도 소자 특성이 열화되기 시작하였다. W/TiN 복층 게이트 MOS 캐패시터를 제작하여 전기적인 특성 분석결과, 순수 텅스텐 게이트 소자의 큰 저전계 누설 전류 특성을 해결할 수 있었으며, 불소확산에 영향을 주는 조건이 WF6/SiH4의 가스비에 크게 의존됨을 알 수 있었다. TiN 박막의 증착 공정이 최적화 될 경우, 0.1$\mu\textrm{m}$이하의 초미세소자용 게이트 전극으로서 텅스텐의 사용이 가능할 것으로 보여진다.

• Journal of applied mathematics & informatics
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• v.16 no.1_2
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• pp.461-468
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• 2004

Let W(z) be a power series with operator coefficients such that multiplication by W(z) is contractive in C(z). The overlapping space $L(\varphi)$ of H(W) in C(z) is a Herglotz space with Herglotz function $\varphi(z)$ which satisfies $\varphi(z)+\varphi^＊(z^{-1})=2[1-W^{*}(z^{-1})W(z)]$. The identity ${}_{L(\varphi)}={-}_{H(W)}$ holds for every f(z) in $L(\varphi)$ and for every vector c.

• ETRI Journal
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• v.36 no.3
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• pp.498-501
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• 2014

A C-band 50 W high-power microwave monolithic integrated circuit amplifier for use in a phased-array radar system was designed and fabricated using commercial $0.25{\mu}m$ AlGaN/GaN technology. This two-stage amplifier can achieve a saturated output power of 50 W with higher than 35% power-added efficiency and 22 dB small-signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact $14.82mm^2$ chip area, an output power density of $3.2W/mm^2$ is demonstrated.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.87-91
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• 2004

We have investigated the effects of W-N/Pt bottom electrode on the ferroelectric degradation of $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ due to hydrogen annealing at $350^{\circ}C$ in $N_2$ gas atmosphere containing $5{\%}\;H_2$ gas for 1hr. As a result, inserting the W-N thin films between SBT and Pt, this W-N thin film prevents hydrogen molecules to be chemisorbed at the Pt electrode surface of at the electrode/ferroelectric interface during hydrogen annealing. These hydrogen atoms can diffuse into the SBT and react with the oxide causing the oxygen deficiency in the SBT film, which will result in the ferroelectric degradation. Experimental results show that W-N thin film is a good diffusion barrier during the hydrogen annealing.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.141-149
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• 1998

The W thin films were deposited on Si3N4 by a PECVD technique. The effects of substrate temperature and gas flow ratio on the properties of the W films were investigated. The deposition of W films were limited by surface reaction at the temperature range of 150>~$250^{\circ}C$, W films had the deposition rate of 150~530 $\AA$/min and stress of 0.85~$14.35\times10 ^9 \textrm {dynes/cm}^2}$ at various substrate temperatures and $SiH_4/WF_6$ flow ratios. $SiH_4/WF_6$ flow ratio affected the deposition rate and stress of the W films, expecially, excessive flow of SiH4 abruptly changed the structure, chemical bonding, and stress of the W films. Among the deposited W films on TiN, Ti, Mo, NiCr and Al adhesion layer, the one on the Al had the best adhesion property.