• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.172-172
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• 2011

현대 반도체 금속배선 연구에서는 기존에 쓰이던 Al (Aluminium) 금속배선 대신에 Cu(Copper) 금속배선 연구가 진행 되고 있다. Cu는 Al 보다 비저항이 낮고, 녹는점도 Al보다 높다는 장점이 있지만 저온에서 기판인 Si (Silicon) 과 반응하고 접착력이 우수하지 못 하다는 단점이 있다. 이런 문제를 해결하기 위하여 확산방지막을 기판과 금속배선 사이에 삽입하는 방법이 제시 되었다. 확산방지막으로는 기존에 쓰이던 Ti (Titanium) 계열의 확산방지막과 W (Tungsten) 계열의 확산방지막이 있다. 이번 연구에서는 W 계열의 확산방지막에 불순물 C (Carbon), N(Nitrogen)을 첨가한 W-C-N 확산방지막 시편을 제조하였고, N2의 비율을 변화시키며 $600^{\circ}C$ 열처리를 하였다. 실험 결과 질소의 포함 농도에 따라 확산방지막의 안정도가 변화한다는 결과를 얻었으며, 질소 첨가량에 따라 시편의 표면 보다는 시편의 중간층의 물성 변화율이 큰데 이는 시편 표면의 질소는 열처리 중 확산에 의한 시편과의 분리 현상이 일어나지만 시편의 중간층은 trap현상에 의하여 시편에 남아있어 질소의 영향을 받아 시편의 중간층이 더욱 질소 유량에 따른 영향이 큰 것을 확인하였다. 이 결과로부터 W-C-N 박막은 첨가된 질소의 유량에 따라 박막의 안정도가 결정된 다는 것을 알았다. 본 연구에서 시편은 rf magnetron sputtering 방법으로 제작하였고 연속압입 실험은 Hysitron사의 Triboindenter를 이용하였다. Indenting에 사용된 압입팁은 Berkovich tip을 사용하였다.

• Journal of applied mathematics & informatics
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• v.28 no.1_2
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• pp.13-30
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• 2010

Let C be a nonempty closed convex subset of a real Hilbert space H. Consider the following iterative algorithm given by $x_0\;{\in}\;C$ arbitrarily chosen, $x_{n+1}\;=\;{\alpha}_n{\gamma}f(W_nx_n)+{\beta}_nx_n+((1-{\beta}_n)I-{\alpha}_nA)W_nP_C(I-s_nB)x_n$, ${\forall}_n\;{\geq}\;0$, where $\gamma$ > 0, B : C $\rightarrow$ H is a $\beta$-inverse-strongly monotone mapping, f is a contraction of H into itself with a coefficient $\alpha$ (0 < $\alpha$ < 1), $P_C$ is a projection of H onto C, A is a strongly positive linear bounded operator on H and $W_n$ is the W-mapping generated by a finite family of nonexpansive mappings $T_1$, $T_2$, ${\ldots}$, $T_N$ and {$\lambda_{n,1}$}, {$\lambda_{n,2}$}, ${\ldots}$, {$\lambda_{n,N}$}. Nonexpansivity of each $T_i$ ensures the nonexpansivity of $W_n$. We prove that the sequence {$x_n$} generated by the above iterative algorithm converges strongly to a common fixed point $q\;{\in}\;F$ := $\bigcap^N_{i=1}F(T_i)\;\bigcap\;VI(C,\;B)$ which solves the variational inequality $\langle({\gamma}f\;-\;A)q,\;p\;-\;q{\rangle}\;{\leq}\;0$ for all $p\;{\in}\;F$. Using this result, we consider the problem of finding a common fixed point of a finite family of nonexpansive mappings and a strictly pseudocontractive mapping and the problem of finding a common element of the set of common fixed points of a finite family of nonexpansive mappings and the set of zeros of an inverse-strongly monotone mapping. The results obtained in this paper extend and improve the several recent results in this area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.156-157
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• 2008

반도체 소자 회로의 집적도가 높아짐에 따라 선폭이 감소하였고 고온 공정이 필요하게 되었다. 기존의 반도체 회로 배선 재료인 Al을 사용할 경우 소자의 속도가 느려져서 소자의 신뢰도가 떨어지고 고온공정에서의 문제가 발생되어 이를 해결하기 위한 차세대 배선 물질로 비저항이 낮은 Cu의 사용이 요구되고 있다. 하지만 Cu는 Si와의 확산이 잘 일어나기 때문에 그 사이에서 확산을 막아주는 확산방지막에 대한 필요성이 제기되었고 연구가 활발히 진행되고 있다. 본 논문에서는 Cu와 Si사이의 확산을 방지하기 위한 W-C-N 확산방지막을 물리적 기상 증착법(PVD)중 하나인 RF Magnetron Sputtering 방식을 사용하여 증착하였다. 고온 공정에서의 안정성을 알아보기 위해 $600^{\circ}C$ 부터 $900^{\circ}C$ 까지 $100^{\circ}C$ 단위로 열처리를 하였고 4-point probe 장치를 사용하여 열처리 온도에 따른 비저항 측정을 통해 W-C-N 확산방지막의 특성을 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.181-181
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• 2010

현대 반도체 금속배선 연구에서는 기존에 쓰이던 Al (Aluminium) 금속배선 대신에 Cu (Copper) 금속배선 연구가 진행되고 있다. Cu는 Al 보다 비저항이 낮고, 녹는점도 Al보다 높다는 장점이 있지만 저온에서 기판인 Si (Silicon) 과 반응하고 접착력이 우수하지 못 하다는 단점이 있다. 이런 문제를 해결하기 위하여 확산방지막을 기판과 금속배선 사이에 삽입하는 방법이 제시 되었다. 확산방지막으로는 기존에 쓰이던 Ti (Titanium) 계열의 확산방지막과 W (Tungsten) 계열의 확산방지막이 있다. 이번 연구에서는 W 계열의 확산방지막에 불순물 C (Carbon) 과 N (Nitrogen) 을 첨가한 W-C-N 확산방지막 시편을 제조하였고, N2의 비율을 변화시키며 $600^{\circ}C$, $800^{\circ}C$열처리를 하였다. 본 실험의 결과로, 확산방지막의 $N_2$ 농도가 0, 0.5, 2 sccm으로 증가할수록 고온에서도 Elastic modulus 와 Hardness 값이 시편의 여러 영역에서 비교적 안정적으로 유지된다는 결과를 얻었다. 이 결과로부터 W-C-N 박막의 질소 농도에 따라 고온에서도 비교적 안정적으로 유지된다는 결과를 얻었다. 본 연구에서 시편은 RF magnetron sputtering 방법으로 제작하였고 Elastic modulus와 Hardness의 측정은 Hysitron사의 Triboindenter를 이용하였다. Indenting에 사용된 압입팁은 Berkovich tip을 사용하였다.

• 한국생물공학회:학술대회논문집
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• 2000.11a
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• pp.435-438
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• 2000

Crude oil-degrading microorganisms, Acinetobacter sp. A132, Pseudomonas aeruginosa F722, and Acinetobacter calcoaceticus OM1 were isolated from soil and sea. The optimal temperature of strain A132 and strain F722 on growth isolated from soil was $35^{\circ}C$ both, and also their growth were optimized at pH 8 and 9, respectively. The growth of the strains, A132 and F722, showed that crude oil of 2% (w/v) in culture broth in which crude oil was used as carbon and energy sources appeared to be an optimum. Optimal culture conditions of strain OM1 were different from those of the soil microorganisms except for temperature. The growth of strain OM1 was optimized at pH 7 and crude oil of 3.0% (w/v). The degradability to crude oil by strain A132 showed maximum $5.49g/\;l\;{\cdot}\;day$ under the conditions of $25^{\circ}C$, NaCl of 1.0% (w/v), and crude oil of 2.0% (w/v). The highest degradability of strain F722 to crude oil was $1.19g/\;l\;{\cdot}\;day$ under the culture conditions at $35^{\circ}C$, NaCl 1.0% (w/v), and crude oil of 2.0% (w/v). The degradation characteristics of kerosene $(nC_9-nC_{20})$ and diesel $(nC_9-nC_{28})$ by strain OM1, and F722 were analyzed by gas chromatography. Strain OM1 degraded more than 95% of kerosene and 75% of diesel for 7 days cultivation. Strain F722 showed degradation of more than 80% to kerosene in 10 days.

• Journal of the Korean Chemical Society
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• v.39 no.11
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• pp.856-862
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• 1995

The tungsten oxo-nitrosyl complexes (n-Bu4N)2[W5O12(NO)2{RC(NH2)NHO}2{RC(NH)NO}2] (R=(CH3)2CH, CH3CH2CH2, CH3SCH2) have been synthesized by the reactions of polyoxotungsten complex (n-Bu4N)2[W6O19] and tungsten dinitrosyl monomeric complex [W(NO)2(acac)(CH3CN)2](BF4) with butylamidoxime derivatives. The prepared complexes have been characterized by elemental analysis, infrared, UV-visible, 1H NMR and 13C NMR spectroscopy. The pentanuclear species was formed by the interaction of the electron-withdrawing {W(NO)2}2+ unit between the two dinuclear tungsten {W2O5}2+ cores. We can estimate to exist large proton interactions viewed from the four doublet in 1H NMR spectrum of (n-Bu4N)2[W5O12(NO)2{(CH3)2CHC(NH2)NHO}2{(CH3)2CHC(NH)NO}2]. We also drew informations of the two different coordination mode and symmetry of the complexes because two ligands appear in 13C NMR spectra instead of four. The {W(NO)2}2+ unit has been cis-form and C2v symmetry in geometric structure.

• Nuclear Engineering and Technology
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• v.31 no.6
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• pp.561-571
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• 1999

Microstructure and mechanical properties of five Cr-Mo steels for nuclear industry applications have been investigated. Transmission electron microscopy, energy dispersive spectrometer, differential scanning calorimeter, hardness, tensile, and impact test were used to evaluate the Cr and W effect on the microstructure and mechanical properties. Microstructures of Cr-Mo steels after tempering are classified into three types : bainitic 2.25Cr-lMo steel, martensitic Mod.9Cr-lMo, HT9M, and HT9W steels, and dual phase HT9 steel. The majority of the precipitates were found to be M$_{23}$C$_{6}$ carbides. As minor phases, fine needle-like V(C,N), spherical NbC, fine needle-like Cr-rich Cr$_2$N, and Cr-rich M$_{7}$C$_3$were also found. Addition of 2wt.% W in Cr-Mo steels retarded the formation of subgrain and dissolution of Cr$_2$N precipitates. Hardness and ultimate tensile strength increased with increasing Cr content. Though Cr content of HT9W steel was lower than that of HT9 steel, the hardness of HT9W was higher due to the higher W content. W added HT9W steel had the highest ultimate tensile strength above $600^{\circ}C$. But impact toughness of W added steel (HT9W) and high Cr steel (HT9) was low.w.w.

• Bulletin of the Korean Mathematical Society
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• v.61 no.4
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• pp.907-915
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• 2024

Let f be an integral quadratic form in k variables, F the Gram matrix corresponding to a ℤ-basis of ℤ^k. For r ∈ F^-1ℤ^k, a rational number n with f(r) ≡ n mod ℤ and a positive integer c, set N_f(n, r; c) := #{x ∈ ℤ^k/cℤ^k : f(x + r) ≡ n mod c}. Siegel showed that for each prime p, there is a number w depending on r and n such that N_f(n, r; p^ν+1) = p^k-1N_f(n, r; p^ν) holds for every integer ν > w and gave a rough estimation on the upper bound for such w. In this short note, we give a more explicit estimation on this bound than Siegel's.

• Journal of the Korean Chemical Society
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• v.40 no.1
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• pp.28-36
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• 1996

The pentanuclear complexes have been obtained by the reactions of molybdenum(VI) and tungsten(VI) polynuclear complexes with molybdenum(O) and tungsten(O) dinitrosyl mononuclear complexes, and methylthioamidoxime. The prepared complexes (n-Bu4N)2[Mo4O12Mo(NO)2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2](1), (n-Bu4N)2[W4O12Mo(NO)2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2](2), (n-Bu4N)2[Mo4O12W (NO)2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2] (3) have been characterized by elemental analysis, infrared, UV-visible and 1H NMR spectra. The complexes are elucidated the cis-{M(NO)2}2+(M = Mo, W) unit and a slight delocalization by spectroscopy. The structure of (n-Bu4N)2[W4O12Mo(NO) 2{CH3SCH2C(NH2)NHO}2{CH3SCH2C(NH)NO}2] was determined by X-ray single crystal diffraction. Crystal data are follows: Monoclinic, $P21}a$, a = 22.14(2) $\AA$, b = 14.93(1) $\AA$, c = 23.20(1) $\AA$, $\beta$ = 111.08(6) $\AA$, V = 7155(9) $\AA$, Z = 4, final R = 0.072 for 6191(I > $3\sigma(I)).$ The structure of complex forms two dinuclear [W2O5{CH3SCH2C(NH2)NHO}{CH3SCH2C(NH)NO}] and a central {Mo(NO)2} 2+ core. The geometric structure of the {Mo(NO)2} 2+unit is the formally cistype and C2v symmetry.

• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.189-193
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• 2001

We have characterized physical and electrical properties of W-TiN stacked gate electrode structure with TiN as a diffusion barrier of fluorine. As the $N_2/Ar$ gas ratio increased during sputter deposition, TiN thin films became N-rich, and the resistivity of the films increased. However, the resistivity of W-TiN stacked gate reduced as a result of the crystallization of tungsten with the increase of $N_2/Ar$ gas ratio. On the other hand, tungsten in W-TiN stacked gate structure have the (100)-oriented crystalline structure although TiN films were subjected to annealing at high temperature (600~$800^{\circ}C$). Leakage currents of W-TiN gate MOS capacitors were less than $10^{-7}\textrm{/Acm}^2$ and also were lowered by the order of 2 compared with those of pure W gate electrode.