• ETRI Journal
• /
• v.28 no.2
• /
• pp.253-256
• /
• 2006

We propose a novel power metal oxide semiconductor field effect transistor (MOSFET) employing a strained-Si channel structure to improve the current drivability and on-resistance characteristic of the high-voltage MOSFET. A 20 nm thick strained-Si low field channel NMOSFET with a $0.75\;{\mu}m$ thick $Si_{0.8}Ge_{0.2}$ buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with a conventional Si channel high-voltage NMOSFET, while suppressing the breakdown voltage and subthreshold slope characteristic degradation by 6% and 8%, respectively. Also, the strained-Si high-voltage NMOSFET improved the transconductance by 28% and 52% at the linear and saturation regimes.

• Proceedings of the KIEE Conference
• /
• 1994.11a
• /
• pp.3-5
• /
• 1994

It is shown that the power flow considering the voltage characteristic of the composite load has some difference comparing with conventional load flow in this paper. When the load flow is used in a study of the static voltage stability, it is necessary to consider the voltage characteristic of load, since the composite load of a typical power system bas constant power, constant current, and constant impedance characteristic. The load is modeled to a polynomial form in here, and used in solving the load flow problem. In this way, the effect which the voltage characteristic of the load has on several voltage collapse proximity indicator based on sensitivities is compared with the conventional load flow, or with another load model having a different voltage characteristic. In this paper, the voltage collapse proximity indicator using the sensitivity of real power for transmission loss is also proposed, and compared with other indicators.

• The Transactions of the Korean Institute of Electrical Engineers P
• /
• v.53 no.2
• /
• pp.43-50
• /
• 2004

Percentage differential characteristic relaying(PDR) has been recognized as the principal basis for power transformer protection. Second harmonic restraint PDR has been widely used for magnetizing inrush in practice. Nowadays, relaying signals can contain 2nd harmonic component to a large extent even in a normal state, and 2nd harmonic ratio indicates a tendency of relative reduction because of the advancement of material. Further, as the power system voltage becomes higher and more underground cables are used, larger 2nd harmonic component in the differential current under internal fault is observed. And then, conventional 2nd harmonic restraint PDR exposes some doubt in reliability. It is, therefore, necessary to develop a new algorithm for performance improvement of conventional protective relaying. This paper proposes an advanced protective relaying algorithm by using voltage-current trend and flux-differential current slope characteristic. To evaluate the performance of the proposed algorithm, we have made comparative studies of PDR, fuzzy relaying and DWT relaying. The paper is constructed power system model including power transformer, utilizing the WatATP, and data collection is made through simulation of various internal faults and inrush. As the results of test, the new proposed algorithm was proven to be faster and more reliable.

• Proceedings of the IEEK Conference
• /
• summer
• /
• pp.66-69
• /
• 2004

This work is the study of Voltage-Down Converter used as internal supply voltage having large current driving and stable voltage level at any variation of process, voltage, and temperature(P.V.T). It converts VDD(external supply voltage) into $V_{1NT}(internal\;supply\;voltage).$ From the simulation results, a new Voltage-Down Converter has large current driving and a little stand-by current under lower supply voltage than conventional circuit. And bad characteristic of VINT, peaking, was eliminated. Start-up circuit for BGR is also added to one circuit, which consumes less current dissipation than convention circuit

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.323-326
• /
• 1998

The current-voltage characteristic have been measured in a gas stabilized DC arc generated in a non-transferred arc plasma torch operating on a mixture of argon and nitrogen. Relation between voltage and current to these arcs has been examined by plasma power and current under different flow rates and gas mixture ratios. Firstly, the voltage and current of arc plasma used argon was measured and secondly, in argon-nitrogen mixed gas regime, the flow rate of nitrogen was increased slowly. When the flow rate of nitrogen was increased, electrode drop of potential was increased.

• Proceedings of the KIEE Conference
• /
• 2005.07a
• /
• pp.205-207
• /
• 2005

In this paper, the Point of Common Coupling (PCC) is selected to analyze harmonic characteristic of distribution system by IEC 61000 - 3 - 6 in Electromagnetic Compatibility(EMC). Harmonic voltage and current were measured at the PCC of real distribution system. Harmonic distribution, nonlinear load component and Total Harmonic Distortion(THD) were verified by measurement. The effective and accurate modelling of real distribution system were proved through a analysis of harmonic impedance, voltage and current in steady-state. Harmonic transfer characteristic in distribution system were summarized and investigated through a analysis of harmonic voltage and harmonic current in harmonic current source.

• The Transactions of the Korean Institute of Power Electronics
• /
• v.9 no.2
• /
• pp.105-111
• /
• 2004

In this paper, a new self-oscillated type high voltage power supply for the OPC(Organic Photo Conductor) charge is proposed, which has variable constant current source characteristics to improve the charge characteristic of the OPC roller. The proposed control method enables high quality printing characteristics regardless of the circumstance change such as ambient temperature or humidity by changing the current reference signal. To verify the proposed control method various experiments are performed.

• Proceedings of the KIEE Conference
• /
• 2002.11d
• /
• pp.200-203
• /
• 2002

This paper presents Continuous-current mode of $S^4$-PFC(Single-Stage Single-switch Power Factor Correction) converter. Proposed converter operates in the continueous current mode(CCM) at full load and discontinuous current mode(DCM) at light load. So, characteristic of proposed converter is no bus voltage stress and Zero Voltage Switching(ZVS) using resonant auxiliary circuit. And. This paper presents characteristic of $S^4$-PFC converter and effect of circuit parameter of proposed converter through the input inductor, PFC capacitor's variation. All of these theory and characteristic verified through the experiment with a 72W(12V, 6A), $90^{kHz}$ prototype converter.

• Electrical & Electronic Materials
• /
• v.9 no.10
• /
• pp.1008-1012
• /
• 1996

I-V, C-V characteristics of inverted staggered type hydrogenerated amorphous silicon thin film transistor(a-Si:H TFT) was studied and experimentally verified. The results show that the log-log plot of drain current increased by voltage increase. The saturated drain current of DC output characteristics increased at a fixed gate voltage. According to the increase of gate voltage, activation energy of electron and the increasing width of Id at high voltage were decreased. Id saturation current saturated at high Vd over 4.5V, Vg-ld hysteresis characteristic curves occurred between -15V and 15V of Vg. Hysteresis current decreased at low voltage of -15V and increased at high voltage of 15V.

• Journal of Advanced Information Technology and Convergence
• /
• v.8 no.2
• /
• pp.59-67
• /
• 2018

The minimum power supply voltage of a typical bandgap current reference (BGCR) is limited by operating temperature and input common mode range (ICMR) of a feedback amplifier. A new BGCR using a bandgap voltage generator (BGVG) is proposed to minimize the effect of temperature, supply voltage, and process variation. The BGVG is designed with proportional to absolute temperature (PTAT) characteristic, and a feedback amplifier is designed with weak-inversion transistors for low voltage operation. It is verified with a $0.18-{\mu}m$ CMOS process with five corners for MOS transistors and three corners for BJTs. The proposed circuit is superior to other reported current references under temperature variation from $-40^{\circ}C$ to $120^{\circ}C$ and power supply variation from 1.2 V to 1.8 V. The total power consumption is $126{\mu}W$ under the conditions that the power supply voltage is 1.2 V, the output current is $10{\mu}A$, and the operating temperature is $20^{\circ}C$.