• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.484-494
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• 2014

We describe a digitally controlled oscillator (DCO) which compensates the frequency variations for process, voltage, and temperature (PVT) variations with an accuracy of ${\pm}2.6%$ at 2.5 GHz. The DCO includes an 8 phase current-controlled ring oscillator, a digitally controlled current source (DCCS), a process and temperature (PT)-counteracting voltage regulator, and a bias current generator. The DCO operates at a center frequency of 2.5 GHz with a wide tuning range of 2.2 GHz to 3.0 GHz. At 2.8 GHz, the DCO achieves a phase noise of -112 dBc/Hz at 10 MHz offset. When it is implemented in an all-digital phase-locked loop (ADPLL), the ADPLL exhibits an RMS jitter of 8.9 ps and a peak to peak jitter of 77.5 ps. The proposed DCO and ADPLL are fabricated in 65 nm CMOS technology with supply voltages of 2.5 V and 1.0 V, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.05a
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• pp.227-229
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• 2002

In this paper, we report on a microstrip line voltage controlled tunable bandpass filter. We used the characteristic the relative dielectric constant of thin film ferroelectrics depends on the applied dr voltage. we designed using Au/BSTO/MgO/Au structure. We cascaded many resonators for large furling range sustaining 1 GHz renter frequency, narrow band, low IL ($\leq$4 dB). We could design the BPF of which center frequency is 16 GHz, 1.9 GHz tuning range, the narrow bandwidth within 800 MHz, low insertion loss less than 3 dB by adjusting the gap of 3 cascaded resonators.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1506-1508
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• 2005

VCO(voltage controlled oscillator) using mobile communication device decides direct characteristics as parts that affect important in stable oscillation and distortion characteristics of system. VCO used 900 MHz band was designed by the transformation of Colpitts circuit form use ADS that consider Q-factor to minimize phase noise. VCO manufactured together evaluation board and voltage control oscillator to FR-4 PCB. VCO experimented chracteristics after control through resonance department tuning. In our research, the designed VCO has 15.5 dBm output level at the bias condition of 6V and 10mA and the operating frequency range of 917 MHz$\sim$937 MHz band. Phase noise is -98.28 dBc/Hz at 1 MHz frequency offset from the carrier.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.10
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• pp.4745-4750
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• 2012

In this paper a $6^{th}$ 1MHz~30MHz bandpass filter for Power line communication(PLC) modem receiver is designed using current mode synthesis method which is good to design the low-voltage and low-power filter. The designed bandpass filter is composed of cascade connecting between $3^{rd}$ Butterworth highpass filter and $3^{rd}$ Chebychev lowpass filter. As a core circuit in the current-mode filter, a current-mode integrator is designed with new architecture which can improve gain and unity gain frequency of the integrator. The gain and the unity gain frequency of the designed integrator is each 32.2dB and 247MHz. And the cutoff frequency of the designed $6^{th}$ bandpass filter can be controlled to 50MHz from 200KHz according to controlling voltage and the power consumption is 2.85mW with supply voltage, 1.8V. The designed bandpass filter was verified using a $0.18{\mu}m$ CMOS parameter.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2003.11a
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• pp.304-308
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• 2003

A low cost solution employing harmonic oscillation to the frequency synthesizer at 5.8 GHz is proposed. The proposed frequency synthesizer is composed of 2.9GHz PLL chip, 2.9GHz oscillator, and 5.8GHz buffer amplifier. The measured data shows a frequency tuning range of 290MHz, ranging from 5.65 to 5.94GHz, about 0.5dBm of output power, and a phase noise of -107.67 dBc/Hz at the 100kHz offset frequency. All spurious signals including fundamental oscillation power (2.9GHz) are suppressed at least 15dBc than the desired second harmonic signal.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.890-893
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• 2003

In this paper, we have designed the fractional-N frequency synthesizer for bluetooth system using 0.35-um CMOS technology and 3.3-V single power supply. The designed synthesizer consist of phase-frequency detector (PFD), charge pump, loop filter, voltage controlled oscillator (VCO), frequency divider, and sigma-delta modulator. A dead zone free PFD is used and a modified charge pump having active cascode transistors is used. A Multi-modulus prescaler having CML D flip-flop is used and VCO having a tuning range from 746 MHz to 2.632 GHz at 3.3 V power supply is used. Total power dissipation is 32 mW and phase noise is -118 dBc/Hz at 1 MHz offset.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.3
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• pp.55-60
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• 2014

For an high speed communication, a 40GHz VCO was implemented using a 0.11um standard CMOS technology. The mm-wave VCO was designed by a LC type using a spiral inductor, and a simplified architecture with buffers and a smart biasing technique were used to get a high performance. The frequency range of the proposed VCO is 34~40GHz which is suitable for mm-Wave communication system. It has an output power of -16dBm and 16% tuning range. And the phase noise is -100.33dBc/Hz at 1MHz offset at 38GHz fundamental frequency. The total power consumption of VCO including PADs is 16.8mW with 1.2V supply voltage. The VCO achieves the FOMT of -183.8dBc/Hz which is better than previous VOCs.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.12
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• pp.24-30
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• 1996

In this paper, we designed a new type of high frequency on-chip voltage controlled oscillator (VCO) using GaAs MESFET, and their performances were comapred with those of the conventional VCO. Each VCO was designed with three-to-five ring oscillator and inverter, buffer and NOR gate were implemented by GaAs source coupled FET logic, which has better speed and noise performance compared to other GaAs MESFET logic. SPICE simulation showed that the gain of conventional and our new VCO was 1.24[GHz/V], 0.54[GHz/V], respectively. The frquency tuning range were 2.31 to 3.55 [GHz] for conventional VCO and 2.47 to 3.01[GHz] for our new design. This shows that the factor of two gain reductin was achieved without too much sacrifice in the oscillation frequency. For our new VCO, the average temperature index was -2[MHz/.deg. C] in the range of -20~85[.deg. C] the power supply noise index was 5[MHz/%] for 5.3[V].+-.10[%] and total power consumption was 60.58[mW].

• International journal of advanced smart convergence
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• v.9 no.1
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• pp.172-176
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• 2020

The implementation of a low phase noise voltage controlled oscillator (VCO) is important for the signal integrity of wireless communication terminal. A low phase noise wideband VCO for a wireless local area network (WLAN) application is presented in this paper. A 6-bit coarse tune capacitor bank (capbank) and a fine tune varactor are used in the VCO to cover the target band. The simulated oscillation frequency tuning range is from 8.6 to 11.6 GHz. The proposed VCO is desgned using 65 nm CMOS technology with a high quality (Q) factor bondwire inductor. The VCO is biased with 1.8 V VDD and shows 9.7 mA current consumption. The VCO exhibits a phase noise of -122.77 and -111.14 dBc/Hz at 1 MHz offset from 8.6 and 11.6 GHz carrier frequency, respectively. The calculated figure of merit(FOM) is -189 dBC/Hz at 1 MHz offset from 8.6 GHz carrier. The simulated results show that the proposed VCO performance satisfies the required specification of WLAN standard.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.11
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• pp.1104-1112
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• 2013

This paper presents a wideband Colpitts voltage controlled oscillator(VCO) with nanosecond startup time and a center frequency of 8.35 GHz for a new bubble-type motion detector that has a bubble-layer detection zone at the specific distance from itself. The VCO circuit consists of two parts; one is a negative resistance part with a HEMT device and Colpitts feedback structure and the other is a resonator part with a varactor diode and shorted shunt microstrip line. The shorted shunt microstrip line and series capacitor are utilized to compensate for the input reactance of the packaged HEMT that changes from capacitive values to inductive values at 8.1 GHz due to parasitic package inductance. By tuning the feedback capacitors which determine negative resistance values, this paper also investigates startup time improvement with the negative resistance variation and tuning bandwidth improvement with the reactance slope variation of the negative resistance part. The VCO measurement shows the tuning bandwidth of 2.3 GHz(28 %), the output power of 4.1~7.5 dBm and the startup time of less than 2 nsec.