• Title/Summary/Keyword: Voltage variation

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High Voltage Driver IC for LCD/PDP TV Power Supply (LCD/PDP TV 전원장치용 고전압 구동 IC)

  • Song, Ki-Nam;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.11-12
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    • 2009
  • In this paper, we propose a high voltage driver IC(HVIC) for LCD and PDP TV power supply. The proposed circuit is included novel a shoot-through protection and a pulse generation circuit for the high voltage driver IC. The proposed circuit has lower variation of dead time and pulse-width about a variation of a process and a supply voltage than a conventional circuit. Especially, the proposed circuit has more excellent pulse-width matching of set and reset signals than the conventional circuit. Also the proposed pulse generation circuit prevent from fault operations using a logic gate. Dead time and pulse-width of the proposed circuit are typical 250 ns, and its variation is maximum 170 ns(68 %) about a variation of a process and a supply voltage. The proposed circuit is designed using $1\;{\mu}m$ 650 V BCD process parameter, and a simulation is carried out using Spectre.

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Investigation of threshold voltage change due to the influence of work-function variation of monolithic 3D Inverter with High-K Gate Oxide (고유전율 게이트 산화막을 가진 적층형 3차원 인버터의 일함수 변화 영향에 의한 문턱전압 변화 조사)

  • Lee, Geun Jae;Yu, Yun Seop
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.10a
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    • pp.118-120
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    • 2022
  • This paper investigated the change of threshold voltage according to the influence of work-function variation (WFV) of metal gate in the device structure of monolithic 3-dimension inverter (M3DINV). In addition, in order to investigate the change in threshold voltage according to the electrical coupling of the NMOS stacked on the PMOS, the gate voltages of PMOS were applied as 0 and 1 V and then the electrical coupling was investigated. The average change in threshold voltage was measured to be 0.1684 V, and they standard deviation was 0.00079 V.

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A Study on the Control Method of Customer Voltage Variation in Distribution System with PV Systems

  • Kim, Byung-ki;Choi, Sung-sik;Wang, Yong-peel;Kim, Eung-sang;Rho, Dae-seok
    • Journal of Electrical Engineering and Technology
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    • v.10 no.3
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    • pp.838-846
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    • 2015
  • This paper deals with the modified modeling of PV system based on the PSCAD/EMTDC and optimal control method of customer voltages in real distribution system interconnected with the photovoltaic (PV) systems. In order to analyze voltage variation characteristics, the specific modeling of PV system which contains the theory of d-q transformation, current-control algorithm and sinusoidal PWM method is being required. However, the conventional modeling of PV system can only perform the modeling of small-scale active power of less than 60 [kW]. Therefore, this paper presents a modified modeling that can perform the large-scale active power of more than 1 [MW]. And also, this paper proposes the optimal operation method of step voltage regulator (SVR) in order to solve the voltage variation problem when the PV systems are interconnected with the distribution feeders. From the simulation results, it is confirmed that this paper is effective tool for voltage analysis in distribution system with PV systems.

Electron-excitation Temperature with the Relative Optical-spectrumIntensity in an Atmospheric-pressure Ar-plasma Jet

  • Han, Gookhee;Cho, Guangsup
    • Applied Science and Convergence Technology
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    • v.26 no.6
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    • pp.201-207
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    • 2017
  • An electron-excited temperature ($T_{ex}$) is not determined by the Boltzmann plots only with the spectral data of $4p{\rightarrow}4s$ in an Ar-plasma jet operated with a low frequency of several tens of kHz and the low voltage of a few kV, while $T_{ex}$ can be obtained at least with the presence of a high energy-level transition ($5p{\rightarrow}4s$) in the high-voltage operation of 8 kV. The optical intensities of most spectra that are measured according to the voltage and the measuring position of the plasma column increase or decay exponentially at the same rate as that of the intensity variation; therefore, the excitation temperature is estimated by comparing the relative optical-intensity to that of a high voltage. In the low-voltage range of an Ar-jet operation, the electron-excitation temperature is estimated as being from 0.61 eV to 0.67 eV, and the corresponding radical density of the Ar-4p state is in the order of $10^{10}{\sim}10^{11}cm^{-3}$. The variation of the excitation temperature is almost linear in relation to the operation voltage and the position of the plasma plume, meaning that the variation rates of the electron-excitation temperature are 0.03 eV/kV for the voltage and 0.075 eV/cm along the plasma plume.

Motor Control Method for Four-Switch Inverters with DC-link Voltage Ripple Compensation Algorithm (Four-Switch 인버터의 전압 변동 보상 기법을 통한 전동기 운전 기법)

  • Lee, Dong-Myung
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.27 no.7
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    • pp.59-66
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    • 2013
  • This paper proposes a new voltage reference generation method for Four-Switch Inverters(FSI) with compensation of the neutral DC-link voltage variation. Since FSIs have the split DC-link causing the inherent problem of voltage fluctuations in the upper and lower capacitors, it is required to take account the voltage difference between the top and bottom capacitors. In this paper, to reduce the effect by the voltage variation, reference voltages are modified by adding compensation voltages proportional to the voltage difference between upper and lower capacitors. Simulation results showing control performance of induction and permanent magnet motors demonstrate the validity of the proposed method.

Effects of Offset Gate on Programing Characteristics of Triple Polysilicon Flash EEPROM Cell

  • Kim, Nam-Soo;Choe, Yeon-Wook;Kim, Yeong-Seuk
    • Journal of Electrical Engineering and information Science
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    • v.2 no.3
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    • pp.132-138
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    • 1997
  • Electrical characteristics of split-gate flash EEPROM with triple polysilicon is investigated in terms of effects of floating gate and offset gate. In order to search for t the effects of offset gate on programming characteristics, threshold voltage and drain current are studied with variation of control gate voltage. The programming process is believed to depend on vertical and horizontal electric field as well as offset gate length. The erase and program threshold voltage are found to be almost constant with variation of control gate voltage above 12V, while endurance test indicates degradation of program threshold voltage. With increase of offset gate length, program threshold voltage becomes smaller and the drain source voltage just after program under constant control gate voltage becomes higher.

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A Novel Poly-Si TFT Pixel circuit for AMOLED to Compensate Threshold Voltage Variation of TFT at Low Voltage (저전압에서 다결정 실리콘 TFT의 불균일한 특성을 보상한 새로운 AMOLED 구동회로)

  • Kim, Na-Young;Yi, Moon-Suk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.8
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    • pp.1-5
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    • 2009
  • A new pixel circuit for Active Matrix Organic Light Emitting Diodes (AMOLEDs), based on the polycrystalline silicon thin film transistors (Poly-Si TFTs), was proposed and verified by SMART SPICE simulation. One driving and six switching TFTs and one storage capacitor were used to improve display image uniformity without any additional control signal line. The proposed pixel circuit compensates an inevitable threshold voltage variation of Poly-Si TFTs and also compensates the degradation of OLED at low power supply voltage($V_{DD}$). The simulation results show that the proposed pixel circuit successfully compensates the variation of OLED driving current within 0.8% compared with 20% of the conventional pixel circuit.

5-TFT OLED Pixel Circuit Compensating Threshold Voltage Variation of p-channel Poly-Si TFTs (p-채널 다결정 실리콘 박막 트랜지스터의 문턱전압 변동을 보상할 수 있는 5-TFT OLED 화소회로)

  • Chung, Hoon-Ju
    • The Journal of the Korea institute of electronic communication sciences
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    • v.9 no.3
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    • pp.279-284
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    • 2014
  • This paper proposes a novel OLED pixel circuit to compensate the threshold voltage variation of p-channel low temperature polycrystalline silicon thin-film transistors (LTPS TFTs). The proposed 5-TFT OLED pixel circuit consists of 4 switching TFTs, 1 OLED driving TFT and 1 capacitor. One frame of the proposed pixel circuit is divided into initialization period, threshold voltage sensing and data programming period, data holding period and emission period. SmartSpice simulation results show that the maximum error rate of OLED current is -4.06% when the threshold voltage of driving TFT varies by ${\pm}0.25V$ and that of OLED current is 9.74% when the threshold voltage of driving TFT varies by ${\pm}0.50V$. Thus, the proposed 5T1C pixel circuit can realize uniform OLED current with high immunity to the threshold voltage variation of p-channel poly-Si TFT.

A Voltage Programming AMOLED Pixel Circuit Compensating Threshold Voltage Variation of n-channel Poly-Si TFTs (n-채널 다결정 실리콘 박막 트랜지스터의 문턱전압 변동 보상을 위한 전압 기입 AMOLED 화소회로)

  • Chung, Hoon-Ju
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.2
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    • pp.207-212
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    • 2013
  • A novel pixel circuit that uses only n-type low-temperature polycrystalline silicon (poly-Si) thin-film transistors (LTPS-TFTs) to compensate the threshold voltage variation of a OLED driving TFT is proposed. The proposed 6T1C pixel circuit consists of 5 switching TFTs, 1 OLED driving TFT and 1 capacitor. When the threshold voltage of driving TFT varies by ${\pm}0.33$ V, Smartspice simulation results show that the maximum error rate of OLED current is 7.05 % and the error rate of anode voltage of OLED is 0.07 % at Vdata = 5.75 V. Thus, the proposed 6T1C pixel circuit can realize uniform output current with high immunity to the threshold voltage variation of poly-Si TFT.

PWM Converter Control considering time varying source voltage (Time Varying 전원 전압을 고려한 PWM 컨버터 제어)

  • 주인원;임선경;남광희
    • Proceedings of the KIPE Conference
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    • 1999.07a
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    • pp.692-695
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    • 1999
  • A new control scheme is proposed suitable for the three phase PWM converter having abrupt load variation such as a crane. In the converter used in a crane, the peak value of source voltage varies instantaneously due to the abrupt load variations. Such a voltage variation degrades the performance of DC-link control of PWM converter. To overcome this problem, load variations should be detected and compensated properly. We propose a new method for detecting and compensating the load variations without the additional hardware. With the proposed scheme, load variations are detected by estimating the current of DC-link capacitor. The estimated current information is feedbacked to a current controller to improve the performance. Additionally, the variation of source voltage is compensated using feedforward controller. The performance of the proposed scheme has been verified through simulations.

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