• Title/Summary/Keyword: Voltage sensing

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A High Voltage, High Side Current Sensing Boost Converter

  • Choi, Moonho;Kim, Jaewoon
    • Proceedings of the KIPE Conference
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    • 2013.07a
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    • pp.36-37
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    • 2013
  • This paper presents high voltage operation sensing boost converter with high side current. Proposed topology has three functions which are high voltage driving, high side current sensing and low voltage boost controller. High voltage gate driving block provides LED dimming function and switch function such as a load switch of LED driver. To protect abnormal fault and burn out of LED bar, it is applied high side current sensing method with high voltage driver. This proposed configuration of boost converter shows the effectiveness capability to LED driver through measurement results.

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Sensing of Three Phase PWM Voltages Using Analog Circuits (아날로그 회로를 이용한 3상 PWM 출력 전압 측정)

  • Jou, Sung-Tak;Lee, Kyo-Beum
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.11
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    • pp.1564-1570
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    • 2015
  • This paper intends to suggest a sensing circuit of PWM voltage for a motor emulator operated in the inverter. In the emulation of the motor using a power converter, it is necessary to measure instantaneous voltage at the PWM voltage loaded from the inverter. Using a filter can generate instantaneous voltage, while it is difficult to follow the rapidly changing inverter voltage caused by the propagation delay and signal attenuation. The method of measuring the duty of PWM using FPGA can generate output voltage from the one-cycle delay of PWM, while the cost of hardware is increasing in order to acquire high precision. This paper suggests a PWM voltage sensing circuit using the analogue system that shows high precision, one-cycle delay of PWM and low-cost hardware. The PWM voltage sensing circuit works in the process of integrating input voltage for valid time by comparing levels of three-phase PWM input voltage, and produce the output value integrated at zero vector. As a result of PSIM simulation and the experiment with the produced hardware, it was verified that the suggested circuit in this paper is valid.

Driving and Position Sensing Algorithm for an Electrostatic Actuator Using Pulse-width Modulation (펄스폭 변조를 이용한 정전형 액추에이터의 구동 및 위치 검출 알고리즘)

  • Min, Dong-Ki;Jeon, Jong-Up
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.17 no.3
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    • pp.65-70
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    • 2008
  • Capacitive position sensing with modulation technique is widely used in electrostatic actuator applications. To maximize the electrostatic force and the position-sensing gain, capacitors for driving and capacitors for sensing are shared, i.e, after applying the driving voltage with high-frequency modulating signals using op amps, the position is demodulated from the modulated signal. In high-voltage applications, however, low bandwidth of a high-voltage op amp hinders adding the high-frequency modulating signal to the driving voltage. In this paper, new and very simple driving and sensing method is proposed, in which the pulse-width modulated driving voltage eliminates the need of the high-frequency modulating signal for position sensing. This new algorithm is proved by the simulation results using Matlab/SIMULINK.

Dual Sensing with Voltage Shifting Scheme for High Sensitivity Touch Screen Detection (고감도 터치스크린 감지를 위한 양방향 센싱과 전압쉬프팅을 이용한 센싱 기법)

  • Seo, Incheol;Kim, HyungWon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.4
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    • pp.71-79
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    • 2015
  • This paper proposes a new touch screen sensing method that improves the drawback of conventional single-line sensing methods for mutual capacitance touch screen panels (TSPs). It introduces a dual sensing and voltage shifting method, which reduces the ambient noise effectively and enhances the touch signal strength. The dual sensing scheme reduces the detection time by doubling the integration speed using both edges of excitation pulse signals. The voltage shifting method enhances the signal-to-noise ratio (SNR) by increasing the voltage range of integrations, and maximizing the ADC's input dynamic range. Simulation and experimental results using a commercial 23" large touch screen show an SNR performance of 43dB and a scan rate 2 times faster than conventional schemes - key properties suited for a large touch screen panels. We implemented the proposed method into a TSP controller chip using Magnachip's CMOS 0.18um process.

A High-Voltage Current-Sensing Circuit for LED Driver IC (LED Driver IC를 위한 고전압 전류감지 회로 설계)

  • Min, Jun-Sik;No, Bo-Mi;Kim, Yeo-Jin;Kim, Yeong-Seuk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.14-14
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    • 2010
  • A high voltage current sensing circuit for LED driver IC is designed and verfied by Cadence SPECTRE simulations. The current mirror pair, power and sensing MOSFETs with size ratio of K, is used in our on-chip current sensing circuit. Very low drain voltages of the current mirror pair should be matched to give accurate current sensing, so a folded-cascode opamp with a PMOS input pair is used in our design. A high voltage high side LDMOST switch is used between the current sensing circuit and power MOSFET to protect the current sensing circuit from the high output voltage. Simulation results using 0.35um BCD process show that current sensing is accurate with properly frequency compensated opamp.

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The Study on the Characteristics of ReRAM with Annealing Temperature and Oxide Thickness (열처리 온도 및 산화층 두께에 따른 ReRAM 특성 연구)

  • Choi, Jin-hyung;Lee, Seung-cheol;Cho, Won-Ju;Park, Jong-tae
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2013.10a
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    • pp.722-725
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    • 2013
  • In this work, we have been analyzed the characteristics of ReRAM with different annealing condition and temperature. The ReRAM devices with top electrode=150nm, bottom electrode=150nm, oxide thickness=70nm and annealing temperature=$500^{\circ}C$, $850^{\circ}C$ have been used in characterization. The Set/Reset voltage, sensing window and resistivity have been characterized. From the measurement results, the Set/Reset voltage and sensing window have been enhanced as the annealing temperature has been increased. But it has been decreased as the temperature performance has been increased. In case of the annealing temperature=$850^{\circ}C$, the variation of Set/Reset voltage was lower than that of other condition. But the variation of sensing window was the lowest when the annealing temperature was $500^{\circ}C$. With considering the variation of Set/Reset voltage and sensing window, the devices annealed at $850^{\circ}C$ showed the best performance to ReRAM.

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Analysis of the Phase Current Measurement Boundary of Three Shunt Sensing PWM Inverters and an Expansion Method

  • Cho, Byung-Geuk;Ha, Jung-Ik;Sul, Seung-Ki
    • Journal of Power Electronics
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    • v.13 no.2
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    • pp.232-242
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    • 2013
  • To obtain phase currents information in AC drives, shunt sensing technology is known to show great performance in cost-effectiveness and therefore it is widely used in low cost applications. However, shunt sensing methods are unable to acquire phase currents in certain operation conditions. This paper deals with the derivation of the boundary conditions for phase current reconstruction in three-shunt sensing inverters and proposes a voltage injection method to expand the measurable areas. As the boundary conditions are deeply dependent on the switching patterns, they are typically analyzed on the voltage vector plane for space vector pulse width modulation (SVPWM) and discontinuous pulse width modulation (DPWM). In the proposed method, the voltage injection and its compensation are conducted within one sampling period. This guarantees fast current reconstruction and the injected voltage is decided so as to minimize the current ripple. In addition to the voltage injection method, a sampling point shifting method is also introduced to improve the boundary conditions. Simulation and experimental results are presented to verify the boundary condition derivation and the effectiveness of the proposed voltage injection method.

LDO regulator with improved regulation characteristics using gate current sensing structure (게이트 전류 감지 구조를 이용한 향상된 레귤레이션 특성의 LDO regulator)

  • Jun-Mo Jung
    • Journal of IKEEE
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    • v.27 no.3
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    • pp.308-312
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    • 2023
  • The gate current sensing structure was proposed to more effectively control the regulation of the output voltage when the LDO regulator occurs in an overshoot or undershoot situation. In a typical existing LDO regulator, the regulation voltage changes when the load current changes. However, the operation speed of the pass transistor can be further improved by supplying/discharging the gate terminal current in the pass transistor using a gate current sensing structure. The input voltage of the LDO regulator using the gate current sensing structure is 3.3 V to 4.5 V, the output voltage is 3 V, and the load current has a maximum value of 250 mA. As a result of the simulation, a voltage change value of about 12 mV was confirmed when the load current changed up to 250 mA.

Development of Current and Voltage Sensors for Distribution switchgears (로고스키 코일과 저항 분압기 원리를 이용한 배전급 전류/전압 센서 개발)

  • Choe, W.J.;Sohn, J.M.;Lee, B.W.;Oh, I.S.
    • Proceedings of the KIEE Conference
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    • 2003.07b
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    • pp.888-890
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    • 2003
  • In the distribution networks, it is required to develop compact and smart current and voltage sensors for compact and digital switchgears. The sensor developed newly adopt the priciple of rogowski coil for current sensing and resistive voltage divider for voltage sensing. The sensing characteristics and reliabilities were improved compared to conventional ones. In the near future, these voltage and current sensing apparatus will be widely used with electronic protection units for the distribution switchgear.

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Development of Arc Fault Interruption Control Circuit of Fault Voltage Sensing Type (사고전압 감지형 아크차단 제어회로 개발)

  • Kwak, Dong-Kurl;Byun, Jae-Ki;Lee, Bong-Seob
    • Fire Science and Engineering
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    • v.27 no.2
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    • pp.1-5
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    • 2013
  • This paper studies on an arc fault interruption control circuit (AFICC) of fault voltage sensing type. The proposed voltage sensing type AFICC (VST_AFICC) is an electrical fire prevention apparatus that operates the existing circuit breaker with sensing the instantaneous voltage drop of line voltage when occurs electrical faults. The existing Earth Leakage Circuit Breaker (ELB), Molded_case Circuit Breaker (MCCB), and Residual Current Protective Devices (RCDs) used in low voltage distributing system don't have protective capability from electric arc faults to be a major factor of electrical fire. In this paper to improve such problems, a new VST_AFICC using the distortion of voltage waveform when occurs electrical faults is proposed to prevent electrical fire. There is characteristic that the control method of proposed apparatus is different from previous current sensing type. The proposed AFICC has merit that is manufactured by small size and light weight. The practicality of a new VST_AFICC is also verified through various operation analysis.