• Title/Summary/Keyword: Voltage Drive Circuit

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Characteristics of CaS:Eu,S electroluminescent devices (CaS:Eu,S 전계발광소자의 특성)

  • 조제철;유용택
    • Electrical & Electronic Materials
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    • v.8 no.6
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    • pp.752-758
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    • 1995
  • Red emitting CaS:Eu,S electroluminescent(EL) device prepared at 550.deg. C by an electron-beam evaporation technique, demonstrated luminance of 175cd/m$\^$2/ and efficiency of 0.311m/W with 3kHz drive. Luminance was increased with the increase of applied voltage and frequency. From the results of the PL spectrum and the EL spectrum, the CaS:Eu, S device showed emission peak near 640nm resulted from the transition of EU$\^$2+/ 4f$\^$6/5d.rarw.4f$\^$7/. The capacitance of the phosphor layer from the Sawyer-Tower circuit was 10.5nF/cm$\^$2/.

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The Research of Ultra Sonic Controller for Operating BLT (BLT를 구동하기 위한 초음파 제어기에 관한 연구)

  • 이종규;유태제
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2003.11a
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    • pp.361-363
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    • 2003
  • The purpose of this research was to discuss the system that operated Ultra sonic transducer of Pelzo electric ceramics type. The structure of controller was made up of digital signal part drive and feedback circuit, and half bridge inverter. Digital signal part was designed to gain the stable oscillation frequency by making consideration of pointed resonance bandwidth. We tried to control inverter by forward feedback condition because BLT based on the flexibility of elements such as temperature and load condition. In addition, transducer was operated as inverter in order to enhance its power efficiency. In this experiment, output voltage waveform and current waveform have been observed by using BLT.

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Four switch three-phase Z-source rectifier with improved switching characteristics

  • ANVAR, IBADULLAEV;Yoo, Dae-Hyun;Jung, Young-Gook;Lim, Young-Cheol
    • Proceedings of the KIPE Conference
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    • 2014.07a
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    • pp.301-302
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    • 2014
  • This paper describes four switch three-phase Z-source rectifier with improved switching characteristics. This configuration has some advantages switching loss and optimal drive circuit. The rectifier has buck-boost function by shoot-through state. Also, the rectifier has the advantage of decreasing inrush current in start-up and transient states. In order to reduce harmonics PWM modulation technique with a variable index has been suggested. Four switch three-phase Z-source rectifier with improved switching characteristics can output stable DC voltage at the same time decreasing the system's harmonic current. And also the paper presents an application of DCC method in Z-source rectifier. Principles and dynamics of the system are discussed in detail. After having viewed the results we can confirm that the proposed method is eligible and efficient.

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Design of gate driver and test circuits for solid-state pulsed power modulator (반도체 소자기반 펄스 전원용 게이트 구동 및 시험회로 설계)

  • Gong, Ji-Woong;Ok, Seung-Bok;An, Suk-Ho;Jang, Sung-Roc;Ryoo, Hong-Je
    • Proceedings of the KIPE Conference
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    • 2012.07a
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    • pp.230-231
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    • 2012
  • This paper describes a gate driver that operates numerous semiconductor switch in the solide-state pulsed power modulator. the proposed gate driver is designed to receive both the isolated drive-power and the on/off pulse signals through the transformer. Moreover, the IGBT-switch can be quickly turned off by adding protection circuit. Therefore it protects the IGBT-switch from the arc condition that frequently occurs in high-voltage pulse application. To comprehend operating characteristic of each IGBT-switch in pulse output condition, the device consisting of a high efficiency soft-switching capacitor charger and two series stacking IGBT-switch is developed. Finally, the relability of the proposed gate driver and the device for its test are proved through PSpice simulation and experiments.

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New Control Scheme for AC-DC-AC Converter Without DC Link Electrolytic Capacitor (직류링크 전해커패시터 없는 AC-DC-AC 컨버터 제어에 관한 연구)

  • Kim, Joohn-Sheok;Sul, Seung-Ki
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.695-697
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    • 1993
  • In this paper, a novel concept for a static three-phase to three-phase power converter for an AC drive with an unity power factor and reduced harmonics on the utility line is presented. The power circuit consists of two back-to-back connected six-pulse bridges having only a $5{\mu}F$ ceramic capacitor in the DC link. By controlling the active power balance between two bridges, the DC link voltage can be maintained within 20V deviation from the nominal value with the small ceramic capacitor regardless of the load variation even in the unbalanced source condition.

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Design Method and Analysis for Current Limit Charger of Battery System for Regulating CDE Power of Satellite

  • Kim, Kyudong
    • Journal of Aerospace System Engineering
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    • v.14 no.6
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    • pp.74-78
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    • 2020
  • The cooler driver electronics (CDE) for maintaining a low temperature of a satellite payload IR sensor has a compressor with a pulsation current load when in operation. This pulsation current creates a large voltage fluctuation and may negatively affect both the load and regulated bus stability. Thus, a CDE power conditioning system has a battery for use as a buffer that is connected in front of the CDE load line. In this system, a battery charger limiter circuit is required to protect from an over-charge of the battery and power to the load. In this study, an optimal design and parameter selection were developed and simulated.

Design of High Voltage Switch Based on Series Stacking of Semiconductor Switches and Gate Drive Circuit with Simple Configuration (간단한 구조를 갖는 직렬 반도체 스위치 스태킹 기반 고전압 스위치 및 게이트 구동 회로 설계)

  • Park, Su-Mi;Jeong, Woo-Cheol;Ryoo, Hong-Je
    • Proceedings of the KIPE Conference
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    • 2020.08a
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    • pp.221-223
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    • 2020
  • 반도체 기반 고전압 펄스 발생장치에 적용 가능한 고전압 스위치는 주로 수 kV 정격의 반도체 스위치를 직렬로 스태킹하여 구성되며, 이때 각 스위치 소자에는 절연과 동기화된 각각의 게이트 신호가 인가되어야 한다. 본 논문에서는 짧은 펄스 폭의 온, 오프 게이트 펄스와, 단일 턴의 고전압 전선을 일차측으로 갖는 게이트 변압기를 통해 직렬로 구성된 반도체 스위치 스택 기반의 펄스 모듈레이터에 적용 가능한 간단한 구조의 게이트 구동회로가 설계되었다. 각 스위치에 게이트 신호를 전달하기 위해 온, 오프 게이트 펄스를 사용함으로써 게이트 변압기의 포화를 방지할 수 있으며, 이때 각 스위치의 게이트 턴-온, 오프 전압은 변압기 이차측의 제너 다이오드와 스토리지 커패시터를 통해 유지된다. Pspice 시뮬레이션을 통해 12개의 IGBT를 직렬로 구성하여 설계된 구조의 게이트 회로를 적용, 최대 10kV 펄스 출력 조건에서 안정적인 동작을 확인하고 설계를 검증하였으며 1200V 급 IGBT를 사용하여 실제 스위치 스택과 게이트 구동회로 모듈을 1리터 이내의 부피로 고밀도화하여 제작하였다.

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A NEW High Efficiency Soft-Switching Three-Phase PWM Rectifier (새로운 고효율 소프트 스위칭 3상 PWM 정류기)

  • Mun Sang-Pil;Suh Ki-Young;Lee Hyun-Woo;Kwon Soon-Kurl
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.42 no.2 s.302
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    • pp.49-58
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    • 2005
  • A new soft switching three-phase PWM rectifier with simple circuit configuration and high efficiency has been developed. The proposed circuit is a kind of the auxiliary resonant commutated Pole(ARCP)converter The conventional ARCP converter requires three-auxiliary reactors and six-auxiliary switches for the soft switching auxiliary circuit and for these switching elements, a gate drive circuit and a control circuit are required, resulting in high part as a disadvantage. In the main circuit proposed in this paper, the auxiliary soft switching circuit is composed of two-auxiliary reactors, two-auxiliary switches and several diodes. In addition, common use of the PWM control circuit for two-switches will make the control circuit of the auxiliary switches simple. By means of function of the soft switching auxiliary circuit, the main switching element performs zero voltage switching operation and the auxiliary switches perform the zero current switching. In this paper, the circuit configuration and the operational analysis of the proposed circuit are described at first and then, experimental results will be reported. By using a prototype with 5[kW] capacity, the conversion efficiency of maximum $98.8[\%]$ and the power factor of $99[\%]$ or higher were obtained.

Adaptive Design Techniques for High-speed Toggle 2.0 NAND Flash Interface Considering Dynamic Internal Voltage Fluctuations (고속 Toggle 2.0 낸드 플래시 인터페이스에서 동적 전압 변동성을 고려한 설계 방법)

  • Yi, Hyun Ju;Han, Tae Hee
    • Journal of the Institute of Electronics and Information Engineers
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    • v.49 no.9
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    • pp.251-258
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    • 2012
  • Recently, NAND Flash memory structure is evolving from SDR (Single Data Rate) to high speed DDR(Double Data Rate) to fulfill the high performance requirement of SSD and SSS. Accordingly, the proper ways of transferring data that latches valid data stably and minimizing data skew between pins by using PHY(Physical layer) circuit techniques have became new issues. Also, rapid growth of speed in NAND flash increases the operating frequency and power consumption of NAND flash controller. Internal voltage variation margin of NAND flash controller will be narrowed through the smaller geometry and lower internal operating voltage below 1.5V. Therefore, the increase of power budge deviation limits the normal operation range of internal circuit. Affection of OCV(On Chip Variation) deteriorates the voltage variation problem and thus causes internal logic errors. In this case, it is too hard to debug, because it is not functional faults. In this paper, we propose new architecture that maintains the valid timing window in cost effective way under sudden power fluctuation cases. Simulation results show that the proposed technique minimizes the data skew by 379% with reduced area by 20% compared to using PHY circuits.

AWM Driving Method with Hybrid Current Control for PM-OLED Panel (수동형 OLED를 위한 복합 전류 제어 기능을 갖는 AWM 구동방식)

  • Kim, Seok-Man;Lee, Je-Hoon;Hur, Yeo-Jin;Kim, Yong-Hwan;Cho, Kyoung-Rok
    • The Journal of the Korea Contents Association
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    • v.7 no.1
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    • pp.116-123
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    • 2007
  • This paper proposed a new amplitude width modulation for OLED data driver IC. The data driver controls brightness of OLED by adjusting amplitude and width of the data drive current pulse. There were two conventional methods; pulse amplitude modulation(PAM) and pulse width modulation(PWM). The PWM method suffered from lower light emitting time efficiency at low luminance signal. The PAM method suffered from large chip area using DACs for each column. The proposed method was aiming at accurately controlling of the current level by MSB data and light emitting efficiency by LSB data to improve the inefficiencies of the PAM and a PWM. The proposed AWM driver circuit implemented using $0.35-{\mu}m$ 3-poly 4-metal CMOS high voltage process. The simulation result shows the improvement in the accuracy of the gray level control even though the driver circuit is smaller than the PAM.