• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.398.1-398.1
• /
• 2014

The $Cu_2ZnSnSe_4$ (CZTSe) thin films solar cell is one of the next generation candidates for photovoltaic materials as the absorber of thin film solar cells because it has optimal bandgap (Eg=1.0eV) and high absorption coefficient of $10^4cm^{-1}$ in the visible length region. More importantly, CZTSe consists of abundant and non-toxic elements, so researches on CZTSe thin film solar cells have been increasing significantly in recent years. CZTSe thin film has very similar structure and properties with the CIGS thin film by substituting In with Zn and Ga with Sn. In this study, As-deposited CZTSe thin films have been deposited onto soda lime glass (SLG) substrates at different deposition condition using Pulsed Laser Deposition (PLD) technique without post-annealing process. The effects of deposition conditions (deposition time, deposition temperature) onto the structural, compositional and optical properties of CZTSe thin films have been investigated, without experiencing selenization process. The XRD pattern shows that quaternary CZTSe films with a stannite single phase. The existence of (112), (204), (312), (008), (316) peaks indicates all films grew and crystallized as a stannite-type structure, which is in a good agreement with the diffraction pattern of CZTSe single crystal. All the films were observed to be polycrystalline in nature with a high (112) predominant orientation at $2{\theta}{\sim}26.8^{\circ}$. The carrier concentration, mobility, resistivity and optical band gap of CZTSe thin films depending on the deposition conditions. Average energy band gap of the CZTSe thin films is about 1.3 eV.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.02a
• /
• pp.357-357
• /
• 2012

박막트랜지스터의 전극으로 Au, Ag, Mo, ITO와 같은 물질들이 이미 많이 연구되어 왔으며, 투명 Source/Drain 전극을 활용한 물질로는 ITO에 초점이 맞춰져 왔다. 하지만 ITO의 높은 가격과 Indium의 인체 유해한 독성 때문에 ITO를 대체하는 물질에 대해 많은 연구가 진행되고 있다. 그 중 Al이 도핑된 ZnO (AZO) 는 가시광 영역에서 85% 이상의 높은 투과율과 높은 전도성, 낮은 비저항으로 다양한 광전소자의 전극과 윈도우 물질로 많은 응용 가능성을 보여주고 있다. 본 실험에서는 고 품질의 박막성장이 가능하고, 박막의 두께를 세밀하게 조절할 수 있는 Pulsed Laser Deposition (PLD) 을 이용하여 온도변화에 따라 AZO 박막을 성장시키고 구조적, 전기적, 광학적 특성을 조사하였다. 또한 온도변화가 AZO 박막 특성에 미치는 영향을 분석하여 Source/Drain 전극으로 사용하기 위한 조건을 최적화하였고, 실제 투명박막트랜지스터 제작을 통해 소자의 I-V Curve 와 Transfer 특성을 확인하고, Transfer Length Method 방법을 이용하여 투명박막트랜지스터의 접촉저항, 채널 비저항 등을 확인해 보았다. 소결된 타겟으로는 99.99%의 순도를 갖는 ZnO-$Al_2O_3$ (98:2 wt%) 타겟을 이용하였으며, 장비조건으로는 355 nm의 파장대역을 갖는 Nd:YAG 레이저를 사용하였고, 실험변수로는 온도범위 RT, $200^{\circ}C$, $400^{\circ}C$, $600^{\circ}C$에서 실험을 진행하였다. AZO 박막의 구조적, 전기적 특성을 분석하기 위해 각각 X-Ray Diffraction (XRD), Hall measurement 장비를 사용하였으며, 광학적 특성을 분석하기 위한 투과도의 측정은 UV-Visible spectrophotometer 장비를 사용하였다.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.434-436
• /
• 2013

Ga-doped ZnO (GZO) was substitutes of the SnO2:F films on soda lime glass substrate in the photovoltaic devices such as CIGS, CdTe and DSSC due to good properties and low cost. However, it was reported that the electrical resistivity of GZO is unstable above $300^{\circ}C$ in air atmosphere. To improve thermal stability of GZO thin films at high temperature above $300^{\circ}C$ an $TiO_2$ thin film was deposited on the top of GZO thin films as a barrier layer by Pulsed Laser Deposition (PLD) method. $TiO_2$ thin films were deposited at various thicknesses from 25 nm to 100 nm. Subsequently, these films were annealed at temperature of $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$ in air atmosphere for 20 min. The XRD measurement results showed all the films had a preferentially oriented ( 0 0 2 ) peak, and the intensity of ( 0 0 2 ) peak nearly did not change both GZO (300 nm) single layer and $TiO_2$ (50 nm)/GZO (300 nm) double layer. The resistivity of GZO (300 nm) single layer increased from $7.6{\times}10^{-4}{\Omega}m$ (RT) to $7.7{\times}10^{-2}{\Omega}m$ ($500^{\circ}C$). However, in the case of the $TiO_2$ (50 nm)/GZO (300 nm) double layer, resistivity showed small change from $7.9{\times}10^{-4}{\Omega}m$ (RT) to $5.2{\times}10^{-3}{\Omega}m$ ($500^{\circ}C$). Meanwhile, the average transmittance of all the films exceeded 80% in the visible spectrum, which suggests that these films will be suitable for photovoltaic devices.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.574-577
• /
• 2007

We have measured the excited Xe atoms density in the $1s_5$ metastable states by laser absorption spectroscopy in counter discharged type AC-PDP. This experiment has shown the characteristic of the excited Xe atoms density which is relation to the visible light efficiency of PDP. The density of counter discharged AC-PDP have measured to be $9.47\;{\times}\;10^{13}\;cm{-3}$. The result has been shown to higher value than $1.45\;{\times}\;10^{13}\;cm^{-3}$ of conventional AC-PDP.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.10
• /
• pp.814-820
• /
• 2009

Antimony (Sb) doped ZnO thin films (0.1 at.%) were deposited on sapphire (0001) substrates at various temperatures (200 - 600$^{\circ}C$) by using pulsed laser deposition technique. All the thin films have been characterized by X-ray diffractometer, atomic force microscopy and spectrophotometer to investigate their structural, morphological and optical properties, respectively. Hall measurements were also carried out to identify the electrical properties of the thin films. These thin films were constituted in wurtzite structure with the preferential orientation of (002) diffraction plane and had as high as 80% optical transmission in the visible range. The bandgap energy also was determined by spectrophotometer which was around 3.28 eV. Hall measurements results revealed that the Sb dope ZnO thin film (0.1 at.%) grown at $500^{\circ}C$ exhibited p-type conduction with a carrier concentration of $8.633\times10^{16}\;cm^{-3}$, a mobility of $1.41\;cm^2/V{\cdot}s$ and a resistivity of $51.8\;\Omega{\cdot}cm$. We have successfully achieved p-type conduction in antimony doped ZnO thin films with low doping level even though the electrical properties are not favorable. This paper suggests the feasibility of p-type doping with large-size-mismatched dopant by using pulsed laser deposition.

• Journal of the Korean Vacuum Society
• /
• v.7 no.s1
• /
• pp.20-24
• /
• 1998

Photploymer films are widely used in printing and electronic industries, and their usage is expanding to encompass holography, data storage and data processing, optical waveguides and compact disks, etc. One of widely used photoplymerization initiator, 20chloro-hexaarylbiimidazole (o-Cl-HABI), is studied by laser flash photolysis in dichloromethane solution in the absence and presence of the visible light photosensitizing dye, 2, 5-bis[(2, 3, 6, 7 -tetrahydro- 1H, 5H -benzo [i, j,] quinolizin -1-yl) methylene]-cyclopenta-none, (JAW). In the presence of JAW, an increase in triarylimidazolyl radicals L.formation is observed in relative to the absence of JAW. The mechanism of this photosensitizing dissociation is concluded as the dissociation of the o-Cl-HABI radical anion formed by the electron transfer from excited singlet state of JAW to o-Cl-HABI. The observed formation of L.radicals exhibits a linear dependence on o-Cl-HABI concentration. The rate constant of electron transfer obtained from this dependence is equal to (1.0$\pm$0.2) x $10^9 M^{-1}s^{-1}$. No reaction between the excited triplet state of JAW and o-Cl-HABI is found.

• Journal of the Korean Society for Precision Engineering
• /
• v.23 no.6 s.183
• /
• pp.174-179
• /
• 2006

The curing characteristics of a photocurable resin are critical factors that often decide the ultimate resolution and structural sharpness of a final product fabricated by microstereolithography$(\mu-STL)$. In this study, we investigated the curing characteristics of the FA1260T photopolymer under a visible laser light of 42nm wavelength. Modification of the curing property of the FA1260T is attempted to reduce the cure depth $(D_c)$ by adding a radical quencher to the resin. Also, an organic solvent was used to reduce the resin viscosity for an improvement of the flatness of the liquid surface during layer-by-layer curing. As a result, the minimum $D_c$ has been reduced over a factor of 3 with no abrupt increase. Samples of three dimensional microstructures fabricated using the modified FA1260T are presented.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1277_1278
• /
• 2009

Amorphous oxide semiconductor $InGaZnO_4$(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The $O_2$ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.

• Journal of Korean Society for Atmospheric Environment
• /
• v.28 no.2
• /
• pp.159-171
• /
• 2012

Aerosol direct radiative forcing (ADRF) retrieval method was developed by combining data from passive and active satellite sensors. Aerosol optical thickness (AOT) retrieved form the Moderate Resolution Imaging Spectroradiometer (MODIS) as a passive visible sensor and aerosol vertical profile from to the Cloud-Aerosol Lidar and Infrared Pathfinder Satellite Observations (CALIPSO) as an active laser sensor were investigated an application possibility. Especially, space-born Light Detection and Ranging (Lidar) observation provides a specific knowledge of the optical properties of atmospheric aerosols with spatial, temporal, vertical, and spectral resolutions. On the basis of extensive radiative transfer modeling, it is demonstrated that the use of the aerosol vertical profiles is sensitive to the estimation of ADRF. Throughout the investigation of relationship between aerosol height and ADRF, mean change rates of ADRF per increasing of 1 km aerosol height are smaller at surface than top-of-atmosphere (TOA). As a case study, satellite data for the Asian dust day of March 31, 2007 were used to estimate ADRF. Resulting ADRF values were compared with those retrieved independently from MODIS only data. The absolute difference values are 1.27% at surface level and 4.73% at top of atmosphere (TOA).

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2000.05a
• /
• pp.824-828
• /
• 2000

As production cycle has become more and more shorter, the demand of rapid prototyping technology has increased largely. There are many methods for rapid prototyping technology, such as SLA. SLS, FDM. INK JET, LOM and so on. Of all methods, SLA has been most widely used for fabricating precision parts. But products manufactured by this method have limitation of single color and single material. So the principal purpose of this study is to overcome the limit of single color product. If the internal structure of manufactured product is visible with multi-color characteristic, it is possible to check easily the designed model with reality. In order to give multi-color characteristic to the product, photocurable resin mixed with pigment is used in this study. First, transparency of photocurable resin without pigment is evaluated, and then color characteristic and curing characteristic of the mixture is evaluated changing mixing ratio. Through the basic experiments, it becomes possible to fabricate multi-color 3D prototype without assembly.