• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 추계학술대회 논문집
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• pp.187-188
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• 2009

• 한국정밀공학회지
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• 제27권10호
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• pp.14-22
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• 2010

The most costly and time-consuming process in the fabrication of today's multi-layer circuit board is drilling interconnection holes between adjacent layers and via holes within a layer. Decreasing size of via holes being demanded and growing number of via holes per panel increase drilling costs. Component density and electronic functionality of today's multi-layer circuit boards can be improved with the introduction of cost-effective, variable depth laser drilled blind micro via holes, and interconnection holes. Laser technology is being quickly adopted into the circuit board industry but can be accelerated with the introduction of a true production laser drilling system. In order to get optimized condition for drilling to FPCB (Flexible Printed Circuit Board), we use various drill pattern as drill step. For productivity, we investigate drill path optimization method. And for the precise drilling the thermal drift of scanner and temperature change of scan system are tested.

• 한국레이저가공학회지
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• 제6권1호
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• pp.9-16
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• 2003

Micromachining using the DPSS 3rd Harmonic Laser (355nm) has outstanding advantages as a UV source in comparison with Excimer lasers in various aspects such as maintenance cost, maskless machining, high repetition rate and so on. It also has the greater absorptivity of many materials in contrast to other IR sources. In this paper, the process for micro-drilling of blind hole in Cu/PI/Cu substrate with the DPSS UV laser and the scanning device is investigated by the experimental methods. It is known that there is a large gap between the ablation threshold of copper and that of PI. We use the Archimedes spiral path for the blind hole with different energy densities to ablate the different material. Finally, the blind via hole of diameter 100$\mu\textrm{m}$ and 50$\mu\textrm{m}$ was drilled.

• 한국정밀공학회지
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• 제27권10호
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• pp.40-44
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• 2010

Laser drilling is an enabling technology for Through Silicon Via (TSV) interconnect applications. Recent advances in picoseconds laser drilling of blind, micron sized vias in silicon is presented here highlighting some of the attractive features of this approach such as excellent sidewall quality. In this study, we dealt with comparison of heat affection around drilled hole between a picosecond laser and a nanosecond laser process under the UV wavelength. Points which special attention should be paid are that picosecond laser process lowered experimentally recast layer, surface debris and micro-crack around hole in comparison with nanosecond laser process. These finding suggests that laser TSV process has possibility to drill under $10{\mu}m$ via. Finally, the laser drilling platform was constructed successfully.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2008년도 추계학술대회 논문집
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• pp.743-744
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• 2008

• 한국기계가공학회지
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• 제16권1호
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• pp.149-156
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• 2017

Graphene nanoplatelet (GNP)-reinforced alumina ($Al_2O_3$) is a promising material for micro-partapplications, particularly micro-nozzle shapes, because of its excellent wearresistance. In this study, a $Al_2O_3$/GNPcomposite with 15 vol% graphene nanoplatelets (GNP) was highly densified and fabricated via spark plasma sintering for micro-electrical discharge drilling (Micro-ED drilling) and the wear resistance property of the composite is evaluated via the ball-on-disk method. In addition, the diameter and shape of the micro-electrodes machined by wire electrical discharge grinding (WEDG), block electrical discharge grinding (BEDG), and new linear block moving electrical discharge grinding (LBMEDG) methods are systematically compared and analyzed to observe the micro-hole machining in the micro-ED drilling of the $Al_2O_3$/15vol% GNP composite.

• 대한전자공학회논문지SD
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• 제47권12호
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• pp.55-67
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• 2010

고다층 배선 기판에 형성된 개방 스터브(open stub)를 제거한 후면드릴가공홀(Back-Drilled-Hole, BDH)과 일반적인 구조인 관통홀(Plated-Through-Hole, PTH) 구조의 전기적 특성에 대한 분석을 하였으며, 고속 선호를 부품 실장면으로부터 내층의 스트립라인으로 전송하기 위해 비아홀의 급전 길이가 가장 긴 전송층을 선택하였다. 10 GHz의 광대역 주파수 내에서 실험계획법(DOE, design of experiment)을 적용하여 비아홀 구조 내에 외층과 급전층 사이의 비아홀의 길이, 접지층에 형성된 천공(anti-pad)의 크기와 급전층에 형성된 패드 (pad)의 크기가 최대 반사 손실 반전력 주파수와 삽입 손실에 미치는 영향을 분석하였다. 이로 부터 거시적 모델(macro model)을 위한 회귀 실험식을 추출하여 실험 결과와 비교 평가하였고, 실험 영역 외에서도 측정 결과와 5% 이내의 오차를 보이고 있음을 확인하였다.

• 한국표면공학회지
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• 제32권3호
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• pp.289-296
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• 1999

The integration of the LSI has been greatly improved and the circuit patters on the LSI are becoming finer line and pitch. The high-density electronic packaging technology is improved. In order to realize the high-density packaging technology, the density of the circuit wiring of the printed circuit boards have also been more dense. The build-up process multilayer printed circuit board technology have a lot of vias, possibilities of the finer conductor wirings and have a freedom of capabilities of wiring design. The build-up process printed circuit boards have the wiring rules which are the pattern width: $100-20\mu\textrm{m}$, the via hole diameter: $100-50\mu\textrm{m}$. There three kinds of build-up processes as far materials and hole drilling. In this paper, the recent technology trends of the build-up printed circuit board technologies are described.

• Composites Research
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• 제24권4호
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• pp.23-28
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• 2011

최근 항공용 재료 산업 분야에서 널리 사용되고 있는 CFRP의 활용이 증가되고 있다. 하지만, CFRP와 같은 복합재료 부품의 결합 시에 단점이 있다. 복합재료를 이용한 다양한 구조를 제조하기 위해선 많은 홀 가공이 필요하다. 일반적으로 CFRP 홀 가공시 내구성이 매우 강한 polycrystalline crystalline diamond (PCD) 드릴을 사용한다. 하지만, 단가가 비싸고 가공 속도가 느리기 때문에 내구성은 PCD 드릴에 비해 약하나 드릴 형상 변화를 통해 가공 속도를 조절 할 수 있고, 비교적 가격이 저렴한 chemical vapor deposition (CVD) 다이아몬드 코팅 드릴의 사용량이 증가 되고 있다. 본 연구에서는. PCD 드릴과 CVD 다이아몬드 코팅 드릴의 홀 가공성을 비교 평가하였다. 먼저, 홀 가공 조건 식 (날당 이송량, 절삭 속도)을 이용하여 CFRP 홀 가공성을 평가했으며, CFRP 가공 시 드릴링 과정에서 발생하는 시편 내부의 열적 손상 정도를 비교했다. 열화상 카메라 촬영한 홀 가공 시 발생되는 온도를 이용한 경험식을 만들어 두 드릴의 발열 정도에 따른 홀 가공성을 비교 평가하였다. 또한, 홀 가공 시 발생하는 칩(chip) 배출 여부에 따른 홀 내부의 상태를 평가하여 CVD 다이아몬드 코팅 드릴과 PCD 드릴의 CFRP 홀 가공성을 비교했다. 전반적으로 PCD 드릴의 홀 가공성이 CVD 다이아몬드 드릴에 비해 우수한 성능을 나타냈지만, 홀 생성 속도는 CVD 다이아몬드 드릴이 PCD 드릴에 비해 빠른 결과를 나타냈다.

• 한국기계가공학회지
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• 제16권1호
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• pp.36-41
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• 2017

In this paper, $Si_3N_4/hBN$ ceramics with various hexagonal boron nitride (hBN) contents (0, 10, 20, or 30 wt%) were fabricated via spark plasma sintering (SPS) at $1500^{\circ}C$, 50MPa, and 10m holding time. The material properties such as the relative density, hardness, and fracture toughness were systematically evaluated according to the hBN content in the $Si_3N_4/hBN$ ceramics. The results show that relative density, hardness, and fracture toughness continuously decreased as the hBN content increased. In addition, peak-step drilling (with tool diameter $500{\mu}m$) was performed to observe the effects of hBN content in micro-hole shape and cutting force. A machined hole diameter of $510{\mu}m$ (entrance) and stable cutting force were obtained at 30 wt% hBN content. Consequently, $Si_3N_4/30wt%$ hBN ceramic is a feasible material upon which to apply semi-conductor components, and this study is very meaningful for determining correlations between material properties and machining performance.