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Helium guard system design for HIAF iLinac cryogenic distribution system

  • Xianjin Wang;Shuping Chen;Wen Jun;Dajun Fan;Liming Zhu;Yanan Lib;Xiaofei Niu;Junhui Zhang
    • Progress in Superconductivity and Cryogenics
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    • v.25 no.1
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    • pp.6-10
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    • 2023
  • 2 K superfluid helium cryogenic system is the crucial component of many large accelerators. When the cryogenic system is operating at 2K@3129Pa, many room-temperature parts are connected to superfluid helium via tubes. Air Leakage in these connections may lead to air contamination of the cryogenic system. Air contamination may cause equipment failure in cryogenic systems and, in extreme cases, render the entire accelerator system inoperable. Helium guard is a technique that guards against air contamination of these sub-atmospheric pressure connections in 2 K superfluid helium cryogenic system. This paper introduces a typical 2 K cryogenic distribution design for large accelerators, and make risk analysis of air contamination. Finally, the analysis of specific leakage points and detailed engineering design are presented, which may be used as a reference when designing of a 2 K superfluid helium cryogenic distribution system.

The Effect of ESG Performance on Economic Growth

  • Wei-Keon ZHANG
    • East Asian Journal of Business Economics (EAJBE)
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    • v.11 no.4
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    • pp.11-18
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    • 2023
  • Purpose - By filling the existing research hole and supplying a whole evaluation, this test wants to offer actionable insights for stakeholders navigating the intersection of sustainability and financial prosperity. Ultimately, this study contributes to the evolving speak on ESG, fostering a deeper comprehension of its implications for fostering sustainable economic increase. Research design, data, and methodology - Based on the numerous prior literature, the current study adopts a rigorous and systematic approach to discover the connection between Environmental, Social, and Governance (ESG) performance and its effect on a financial boom. The Preferred Reporting Items for Systematic Reviews and Meta-Analyses (PRISMA) method is the guiding framework for systematically accumulating and analyzing earlier research studies. Result: The finding of this study indicates that using ESG-pushed innovation, practitioners can force technological advancements inside their respective industries. By combining sustainability with research and improvement tasks, corporations can be leaders in selling economic boom through current, green solutions. Conclusion - In summary, this study concludes that embracing those findings in this study allows practitioners and managers to enhance their organization's easy regular, well-known traditional regular standard overall performance and undoubtedly contribute to a broader financial boom via leveraging the transformative strength of ESG necessities.

Fabrication and packaging of the vacuum magnetic field sensor (자장 세기 측정용 진공 센서의 제작 및 패키징)

  • Park, Heung-Woo;Park, Yun-Kwon;Lee, Duck-Jung;Kim, Chul-Ju;Park, Jung-Ho;Oh, Myung-Hwan;Ju, Byeong-Kwon
    • Journal of Sensor Science and Technology
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    • v.10 no.5
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    • pp.292-303
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    • 2001
  • This work reports the tunneling effects of the lateral field emitters. Tunneling effect is applicable to the VMFS(vacuum magnetic field sensors). VMFS uses the fact that the trajectory of the emitted electrons are curved by the magnetic field due to Lorentz force. Polysilicon was used as field emitters and anode materials. Thickness of the emitter and the anode were $2\;{\mu}m$, respectively. PSG(phospho-silicate-glass) was used as a sacrificial layer and it was etched by HF at a releasing step. Cantilevers were doped with $POCl_3(10^{20}cm^{-3})$. $2{\mu}m$-thick cantilevers were fabricated onto PSG($2{\mu}m$-thick). Sublimation drying method was used at releasing step to avoid stiction. Then, device was vacuum sealed. Device was fixed to a sodalime-glass #1 with silver paste and it was wire bonded. Glass #1 has a predefined hole and a sputtered silicon-film at backside. The front-side of the device was sealed with sodalime-glass #2 using the glass frit. After getter insertion via the hole, backside of the glass #1 was bonded electrostatically with the sodalime-glass #3 at $10^{-6}\;torr$. After sealing, getter was activated. Sealing was successful to operate the tunneling device. The packaged VMFS showed very small reduced emission current compared with the chamber test prior to sealing. The emission currents were changed when the magnetic field was induced. The sensitivity of the device was about 3%/T at about 1 Tesla magnetic field.

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Rear Surface Passivation of Silicon Solar Cell with AlON Layer by Reactive Magnetron Sputtering

  • Moon, Sun-Woo;Kim, Eun-Kyeom;Park, Won-Woong;Kim, Kyung-Hoon;Kim, Sung-Min;Kim, Dong-Hwan;Han, Seung-Hee
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.430-430
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    • 2012
  • The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

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Photocatalytic activity of rutile TiO2 powders coupled with anatase TiO2 nanoparticles using surfactant (계면활성제를 이용하여 anatase TiO2 나노 입자와 결합된 rutile TiO2 분말의 광촉매 특성)

  • Byun, Jong Min;Park, Chun Woong;Kim, Young In;Kim, Young Do
    • Journal of Powder Materials
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    • v.25 no.3
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    • pp.257-262
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    • 2018
  • The coupling of two semiconducting materials is an efficient method to improve photocatalytic activity via the suppression of recombination of electron-hole pairs. In particular, the coupling between two different phases of $TiO_2$, i.e., anatase and rutile, is particularly attractive for photocatalytic activity improvement of rutile $TiO_2$ because these coupled $TiO_2$ powders can retain the benefits of $TiO_2$, one of the best photocatalysts. In this study, anatase $TiO_2$ nanoparticles are synthesized and coupled on the surface of rutile $TiO_2$ powders using a microemulsion method and heat treatment. Triton X-100, as a surfactant, is used to suppress the aggregation of anatase $TiO_2$ nanoparticles and disperse anatase $TiO_2$ nanoparticles uniformly on the surface of rutile $TiO_2$ powders. Rutile $TiO_2$ powders coupled with anatase $TiO_2$ nanoparticles are successfully prepared. Additionally, we compare the photocatalytic activity of these rutile-anatase coupled $TiO_2$ powders under ultraviolet (UV) light and demonstrate that the reason for the improvement of photocatalytic activity is microstructural.

Which country's end devices are most sharing vulnerabilities in East Asia? (거시적인 관점에서 바라본 취약점 공유 정도를 측정하는 방법에 대한 연구)

  • Kim, Kwangwon;Won, Yoon Ji
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.25 no.5
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    • pp.1281-1291
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    • 2015
  • Compared to the past, people can control end devices via open channel. Although this open channel provides convenience to users, it frequently turns into a security hole. In this paper, we propose a new human-centered security risk analysis method that puts weight on the relationship between end devices. The measure derives from the concept of entropy rate, which is known as the uncertainty per a node in a network. As there are some limitations to use entropy rate as a measure in comparing different size of networks, we divide the entropy rate of a network by the maximum entropy rate of the network. Also, we show how to avoid the violation of irreducible, which is a precondition of the entropy rate of a random walk on a graph.

Improvement of Efficiency in $\pi$-Conjugated Polymer Based on Phenothiazine by Introduction of Oxadiazole Pendant as a Side Chain

  • Choi, Ji-Young;Lee, Bong;Kim, Joo-Hyun;Lee, Kye-Hwan
    • Macromolecular Research
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    • v.17 no.5
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    • pp.319-324
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    • 2009
  • A new $\pi$-conjugated polymer, poly[(2-methoxy-(5-(2-(4-oxyphenyl)-5-phenyl-1,3,4-oxadiazole)-hexyloxy))-1,4-pheny1ene-1,2-etheny1ene-alt-(10-hexyl-3,7-phenothiazine )-1,2-ethenylene] (PTOXDPPV), was synthesized by the Heck coupling reaction. The electron transporting unit, conjugated 1,3,4-oxadiazo1e (OXD), is attached on the main chain via linear 1,6-hexamethylenedioxy chain. The band gap and photoluminescence (PL) maximum of PTOXDPPV are 2.35 eV and 565 nm, respectively. These values are very close to those of po1y[(2,5-didecyloxy-1,4-phenylene-1,2-etheny1ene )-alt-(l0-hexyl-3,7-phenothiazine)-1,2-ethenylene] (PTPPV), which does not have OXD pendant. The estimated HOMO energy level of PTOXDPPV was -4.98 eV, which is very close to that of PTPPV (-4.91 eV). The maximum wavelength of EL device based on PTOXDPPV and PTPPV appeared at 587 and 577 nm, respectively. In the PL and EL spectrum, the emission from OXD pendant was not observed. This indicates that the energy transfer from OXD pendants to main chain is occurred completely. The EL device based on PTOXD-PPV (ITO/PEDOT/PTOXDPPV/AI) has an efficiency of 0.033 cd/A, which is significantly higher than the device based on PTPPV (ITO/PEDOT/PTPPV/AI) ($4.28{\times}10^{-3}\;cd/A$). From the results, we confirm that the OXD pendants in PTOXDPPV facilitate hole-electron recombination processes in the emissive layer effectively.

Design of Dual-band Stacked Meander Line Antenna with Double Coupled Line (이중 커플드 라인을 이용한 이중 대역 적층형 미앤더 라인 안테나)

  • Jung, Jin-Woo;Seo, In-Jong;Lee, Hyeon-Jin;Lim, Yeong-Seog
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.10 s.113
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    • pp.993-999
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    • 2006
  • This paper presents the design simulation, implementation, and measurement of a miniaturized DCS, PCS / Satellite DMB dual-band stacked chip antenna with double coupled line for mobile communication terminals. A stacked meander is realized by using a via hole with height of 0.8 mm and a diameter of 0.35 mm to connect upper- and lower-layer meander sections for a reduction of the dimensions of the antenna. In addition the stacked meander chip antenna is extended by a double coupled-line to achieve two different radiation modes. A ratio of the first frequency and second frequency vary with the geometrical parameter of coupled lines. The fabricated antenna used FR-4 substrate with relative permittivity of 4.2. And its dimensions are $15.2{\times}7{\times}0.8mm^3$. The measured impedance bandwidth(VSRW<2) are 244 and 120 MHz at the operating frequency, respectively.

High-Mobility Ambipolar Polymer Semiconductors by Incorporation of Ionic Additives for Organic Field-Effect Transistors and Printed Electronic Circuits (이온성 첨가제 도입을 통한 고이동도 고분자 반도체 특성 구현과 유기전계효과트랜지스터 및 유연전자회로 응용 연구)

  • Lee, Dong-Hyeon;Moon, Ji-Hoon;Park, Jun-Gu;Jung, Ji Yun;Cho, Il-Young;Kim, Dong Eun;Baeg, Kang-Jun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.3
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    • pp.129-134
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    • 2018
  • Herein, we report the manufacture of high-performance, ambipolar organic field-effect transistors (OFETs) and complementary-like electronic circuitry based on a blended, polymeric, semiconducting film. Relatively high and well-balanced electron and hole mobilities were achieved by incorporating a small amount of ionic additives. The equivalent P-channel and N-channel properties of the ambipolar OFETs enabled the manufacture of complementary-like inverter circuits with a near-ideal switching point, high gain, and good noise margins, via a simple blanket spin-coating process with no additional patterning of each active P-type and N-type semiconductor layer.

절연절단 방식의 프로브 빔 제작

  • Hong, Pyo-Hwan;Gong, Dae-Yeong;Pyo, Dae-Seung;Lee, Jong-Hyeon;Lee, Dong-In;Kim, Bong-Hwan;Jo, Chan-Seop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.449-449
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    • 2013
  • 최근 반도체 소자의 집적회로는 점점 복잡해지고 있는 반면, 소자의 크기는 작아지고 있으며 그로 인해 패드의 크기가 작아지고 패드사이의 간격 또한 협소해지고 있다. 따라서 웨이퍼 단계에서 제조된 집적회로의 불량여부를 판단하기위한 검사 장비인 프로브카드(Probe Card)의 높은 집적도가 요구되고 있다. 하지만 기존의 MEMS 공법으로 제작되는 프로브 빔은 복잡한 제조 공정과 높은 생산비용, 낮은 집적도의 문제점을 가지고 있다. 본 연구에서는 이러한 문제점을 해결하기 위하여 간단한 제조 공정과 낮은 생산비용, 높은 집적도를 가지는 프로브 빔을 개발하기 위하여 절연절단 방식으로 BeCu (Beryllium-Copper) 프로브 빔을 제작하였다. 낮은 소비 전력으로 우수한 프로브 빔 어레이를 제작하기 위해서 가장 고려해야할 대상은 프로브 빔의 재료와 구조(형상)이다. 절연전단 방식으로 프로브 빔을 형성할 때 요구되는 Fusing current는 프로브 빔의 구조(형상)에 크게 영향을 받는다. 낮은 Fusing current는 소비 전력을 줄여주고, 절연절단으로 형성되는 프로브 빔의 단면(끝)을 날카롭게 하여 프로브 빔과 집적회로의 패드 간의 접촉 저항을 감소시킨다. 프로브 빔의 제작은 BeCu 박판을 빔 형태로 식각하여 제작하였으며, 실리콘 비아 홀(Via hole) 구조의 기판위에 정렬하여 soldering 공정을 통해 실리콘 기판과 BeCu 박판을 접합시켰다. 접합된 프로브 빔의 끝부분을 들어 올린 상태로 전류를 인가하여 stress free 상태로 만들어 내부 응력을 제거하였으며, BeCu 박판에 fusing current를 인가하여 BeCu 박판 프레임으로부터 제거를 하였다. 제작된 프로브 빔의 길이는 1.7 mm, 폭은 $50{\mu}m$, 두께는 $15{\mu}m$, 절단부의 단면적은 1$50{\mu}m^2$로 제작되었다. 그리고 프로브 빔의 절단부의 길이는 $50{\mu}m$ 부터 $90{\mu}m$까지 $10{\mu}m$ 증가시켜 제작되었다. 이후에 절연절단 공정에 요구되는 Fusing current를 측정하였고, 절연절단 후의 절단면의 형상을 SEM (Scanning Electron Microscope)장비를 통하여 확인하였다. 절단부의 길이가 $50{\mu}m$일 때 5.98A의 fusing current를 얻었으며, 절연절단 후 절단부 상태 또한 가장 우수했다. 본 연구에서 제안된 프로브 빔 제작 방법은 프로브카드 및 테스트 소켓(Test socket) 생산에 응용이 가능하리라 기대한다.

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