• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1159-1161
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• 1993

This paper may be presented the carrier oscillation properties for the varistor fabricated by a new method of three-composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of non trapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. However, Current oscillation phenomena is hardly shown in the high electric field. The injected carriers from both electrodes are directly flowed from the conduction band of forward biased grain through the intergranular layer into the reverse biased grain, because the trap level in the electric field above the knee voltage is mostly filled.

• E2M - 전기 전자와 첨단 소재
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• 제9권6호
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• pp.542-550
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• 1996

ZnO-based ceramic varistors containing NiO range 0.5 mol% to 4.0 mol% were fabricated by standard ceramic techniques. The influence of NiO on the microstructure and electrical behavior of ZnO varistor was investigated. As the content of NiO additive increases, average grain size decreased from 16.5.mu.m to 13.2.mu.m, and the amount of NiO existing in the grain interior and grain boundary region was approximately equal. NiO acted as an acceptor which decreases donor concentration due to the increase of Zn vacancy in the grain, and as a driver which migrates Zn interstitial in the depletion region toward the interface of grain boundary, which resulted in the decrease of interface state density. As a result, increasing the content of NiO additive, barrier height, nonlinear exponent, and varistor voltage decreased, and leakage current increased. Wholly, the physical and electrical properties of the ZnO varistor can be said to be affected by the NiO additive.

• E2M - 전기 전자와 첨단 소재
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• 제9권7호
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• pp.708-718
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• 1996

The microstructure and electrical properties of the nonlinear ZnO varistor with A1$_{2}$ $O_{3}$ additions is investigated. The variation of nonlinear behavior with A1$_{2}$ $O_{3}$ additions is indicated from J-E and C-V measurement to be a result of the change of the interface defects density $N_{t}$ at the grain boundaries and the donor concentration $N_{d}$ in the ZnO grains. The optimum composition which has the nonlinear coefficients of -57 was observed in the sample with 0.005wt% A1$_{2}$ $O_{3}$ additions. The conduction mechanism at the pre-breakdown region is consistent with a Schottky thermal emission process obeying a relation given by $J^{\var}$exp[-(.psi.-.betha. $E^{1}$2/)kT] and the conduction process at the breakdown region follows a Fowler-Nordheim tunneling mechanism of the form $J^{\var}$exp(-.gamma./E).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.49-49
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• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

• 한국세라믹학회지
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• 제37권2호
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• pp.186-193
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• 2000

Effects of 1.0 mol% CoO addition on sintering and the electrical properties of ZnO-Bi2O3-Sb2O3(ZBS) varistor system with 3.0 mol% co-addition of Sb2O3 and Bi2O3 at various Sb/Bi ratio (0.5, 1.0, and 2.0) were investigated. Cobalt had little influence on the liquid-phase formation and the pyrochlore decomposition temepratures of ZBS, while densification was mainly dependent on Sb/Bi ratio: when Sb/Bi=0.5, excess Bi2O3 irrelevant to the formation of pyrochore(Zn2Sb3Bi3O14) forms eutectic liquid at ~75$0^{\circ}C$ which promotes densification and grain growth; with Sb/Bi=2.0, the second phase Zn7Sb2O12 formed by excess Sb2O3 irrelevant to the formation of the pyrochlore retards densification up to ~100$0^{\circ}C$. These phases caused the coarsening and uneven distribution of the second phase particles on the grain boundaries of ZnO above the pyrochlore decomposition temperature(~105$0^{\circ}C$), which led to broad size dist-ribution of ZnO; the specimen with Sb/Bi=1.0 showed homogeneous microstructure compared with the others, which enabled improved varistor characteristics. Doping of Co increased the nonlinearity and the potential barrier height of ZBS, which is thought to stem from improved sintering behavior such as homogenized microstructure due to size reduction and even distribution of the second phase and suppressed volatility of Bi2O3, as well as the improvement in the potential barrier structure via increased donor and interface electron trap densities.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.239-244
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• 1997

The Voronoi network can be used to effectively simulate the microstructure of ZnO varistors. The nonuniformity in microstructure of simulated ZnO varistor can be changed by setting different disorder degree of Voronoi network. In the region of disorder degree larger than 3 where the simulated microstructures are similar to those the actual ones of ZnO varistors, a chaotic phenomenon exists in the microstructure characteristics. This chaotic property can simulate the original behavior of nonuniformity of electrical characteristics caused by microstructures of ZnO varistors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.857-860
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• 2000

The objective of this paper is to demonstrate degradation phenomena through DC degradation tests and predicts degradation phenomena as a function of time from the tests. The ZnO varistor used in this investigation were fabricated by standard ceramic techniques. Especial, these were sintered in nitrogen atmosphere, at 2 h, for $1300^{\circ}C$. The conditions of DC degradation test were 115$\pm$$2^{\circ}C$for 0, 2, 4, and 8 h, respectively. To demonstrate the degradation phenomena of ZnO varistors, Voltagecurrent analyses were performed before and after the degradation test, and frequency analyses were used with the time of the degradation tests. It was found that the degradation occurred in not grain but grain boundary and the degradation behavior of varistors was unsymmetrically degraded with the direction of tests.

• Transactions on Electrical and Electronic Materials
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• 제14권4호
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• pp.193-198
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• 2013

The effects of additives (Cr, Nb, Dy, and Bi) on microstructure, electrical properties, dielectric characteristics, and aging behavior of $ZnO-V_2O_5-MnO_2-Co_3O_4-La_2O_3$ (ZVMCL) ceramics were systematically investigated. The phase formed in common for all ZVMCL ceramics modified with various additives consisted of ZnO grain as a main phase, and $Zn_3(VO_4)_2$ and $ZnV_2O_4$ as the secondary phases. The sintered density and average grain size were in the range of $5.4-5.54g/cm^3$ and $3.7-5.1{\mu}m$, respectively. The ZVMCL ceramics modified with Cr exhibited the highest breakdown field (6,386 V/cm) and the ZVMCL ceramics modified with Nb exhibited the lowest breakdown field (3,517 V/cm). All additives enhanced the nonlinear coefficient (${\alpha}$), by a small or large margin, in particular, additives such as Bi and Nb noticeably increased the nonlinear coefficient, with ${\alpha}=25.5$ and ${\alpha}=23$, respectively. However, on the whole, all additives did not improve the stability against a DC stress, compared with ZVMCL ceramics.

• 한국전기전자재료학회논문지
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• 제23권11호
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• pp.854-858
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• 2010

In this study, we have investigated the effects of Cr dopant on the sintering and electrical properties of ZnO-$Sb_2O_3$ (ZS) ceramics for varistor application. Spinel phases including $\alpha-$ and $\beta$-type was formed at ZS system and $\alpha$-spinel was stabilized by Cr doping in ZS system. Densification of ZS and ZSCr system was retarded to $1000^{\circ}C$ by the formation of spinel at $800^{\circ}C$. The morphology and its distribution of spinel phases in ZS system was homogeneous but disturbed by Cr doping. In ZSCr the densification of ZnO compared with ZS system was more retarded by low concentration of Zn interstitial defects induced by Cr doping in addition to the effect of spinel phase formation. The defects in each system were identified as attractive coulombic center (ZS: 0.13 eV, ZSCr: 0.12 eV) and singly charged oxygen vacancy $V_0^{\cdot}$ (ZSCr: 0.33 eV). In all ZS and ZSCr system have week varistor behavior by the formation of double Schottky barrier at grain boundary but its stability of barrier was very sensitive to sintering temperature.

• Transactions on Electrical and Electronic Materials
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• 제11권5호
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• pp.216-221
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• 2010

The microstructure, electrical properties, and DC-accelerated aging behavior of the Zn-Pr-Co-Cr-Y-Er (ZPCC-YE) varistors were investigated for different amounts of erbium oxide ($Er_2O_3$). The microstructure consisted of zinc oxide grain and an intergranular layer ($Pr_6O_{11}$, $Y_2O_3$, and $Er_2O_3$-rich phase) as a secondary phase. The increase of $Er_2O_3$ amount decreased the average grain size and increased the sintered density. As the $Er_2O_3$ amount increased, the breakdown field increased from 5094 V/cm to 6966 V/cm and the nonlinear coefficient increased from 27.8 to 45.1. The ZPCC-YE varistors added with 0.5 to 1.0 mol% $Er_2O_3$ are appropriate for high voltage, with high nonlinearity and stability against DC-accelerated aging stress.