• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2161-2163
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• 1999

Generally, ZnO varistors have dynamic characteristics that the cut-off voltage increases as the time to crest of the varistor current decreases. Dynamic characteristics of ZnO varistor are the most important factor in region of the steep front discharge current particularly. Also, V-I characteristics of ZnO varistor have hysterisis loop in time domain and frequency dependency. This paper deals with ZnO varistor numerical equation and modeling method which takes the behavior of varying clamping voltage into consideration during the time to crest, in range of $1{\mu}m{\sim}50{\mu}m$, of impulse current applied to a ZnO varistor. The simulated results by the proposed model are compared with experimental results for each of the impulse current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.34-34
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• 2006

Ferrite/Varistor 이종재료 동시소성에서 소성 시 두 재료간의 서로 다른 수축률에 의한 휠 거동을 ferrite 하소온도와 sheet 제조 시 binder 함량에 따라 제어하였다. Ferrite의 하소온도를 $750^{\circ}C{\sim}900^{\circ}C$로 변화시켰을 때 하소온도가 $900^{\circ}C$ 일 때 수축률이 varistor의 수축률과 악 1%미만의 차이로 가장 유사하였다. $900^{\circ}C$에서 하소한 ferrite의 slurry 제조 시 binder의 함량을 40wt%~50wt%로 변화시키면서 sheet를 제조하여 varistor와 적층하여 $900^{\circ}C{\sim}1000^{\circ}C$에서 소결하였다. Binder 함량이 40wt%에 ferrite와 varistor를 교대로 적층된 시편에서 동시소성 시 휨을 제거할 수 있었다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.63-68
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• 2007

A number of process problems should be solved in the multi-layered ceramic devices such as EMI filter. In particular, it is essential to control the sintering shrinkage in co-firing of different materials for obtaining defect-free samples such as crack, camber, and delamination which usually occur near the surface and interface. We studied the effect of the powder properties of ferrite on the co-firing behavior of green ceramic layers composed of ferrite and varistor. Three kind of ferrite powder samples as a function of milling time (24, 48, and 72 hr) were prepared. Varistor and ferrite ceramic green sheet were made by means of doctor blade process using slurry (ceramic powder and binder solution). Here, slurry was prepared by mixing 55 wt% powder with 45wt% binder solution. Varistor and ferrite green sheets were laminated at $80 kg/cm^2$, and co-fired at $900^{\circ}C$ and $1000^{\circ}C$ for 3 hr. We obtained the camber-free and co-fired ferrite/varistor layer structure by controlling the milling time and sintering temperature.

• Journal of the Korean Ceramic Society
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• v.37 no.7
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• pp.651-651
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• 2000

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.284-289
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• 2014

The effects of additives (Nb, Bi and Cr) on the microstructure, varistor properties, and aging behavior of V/Mn/Co/ La/Dy co-doped zinc oxide ceramics were systematically investigated. An analysis of the microstructure showed that all of the ceramics that were modified with various additives were composed of zinc oxide grain as the main phase, and secondary phases such as $Zn_3(VO_4)_2$, $ZnV_2O_4$, and $DyVO_4$. The $Bi_2O_3$-modified samples exhibited the lowest density, the $Nb_2O_5$-modified sample exhibited the largest average grain size, and the $Cr_2O_3$-modified samples exhibited the highest breakdown field. All additives improved the non-ohmic coefficient (${\alpha}$) by either a small or a large margin, and in particular an $Nb_2O_5$ additive noticeably increased the non-ohmic coefficient to be as large as 36. The $Bi_2O_3$-modified samples exhibited the highest stability with variation rates for the breakdown field and for the non-ohmic coefficient (${\alpha}$) of -1.2% and -26.3%, respectively, after application of a DC accelerated aging stress of 0.85 EB/$85^{\circ}C$/24 h.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.36.1-36.1
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• 2004

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.11
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• pp.875-879
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• 2010

In this study, we have characterized the roles of $Cr_2O_3$ on the sintering and electrical properties of ZnO. The densification and grain growth of Cr-doped ZnO (ZCr) system was mainly influenced by Cr contents. In the beginning of sintering, the densification of ZnO was retarded as reducing the Zni concentration in ZnO lattice with Cr doping. And the densification and grain growth of ZnO was more retarded due to a formation of spinel phase with increasing the Cr contents. ZCr system revealed varistor behavior with nonlinear coefficient $\alpha$ of 3~23 depending on the sintering temperature, implying double Schottky barrier formation on the grain boundary of ZnO. Especially the best varistor characteristics should be developed with 0.1~0.5 at% Cr contents and under $1100^{\circ}C$ in ZCr systems.

• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.366-370
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• 2005

Single gram-boundary varistors were fabricated using hydrothermal and vapor phase grown ZnO single crystals and their voltage-current relation was studied. The single crystal bonded single junction varistor showed various voltage-current relationship and different breakdown voltage of 0.24-3V. The different types of non-linear current voltage behaviors was attributed to the variation of electrical conductivity in ZnO single crystals.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1019-1026
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• 1996

In this study, we may be presented the carrier oscillation properties for the low-voltage varistor fabricated by a new method of three composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of nontrapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. In particularly, current oscillation phenomena is hardly shown in the high electric field. It is that the injected carriers from both electrodes are directly from the conduction band of forward biased ZnO grain through the intergranular layer into the reverse biased ZnO grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.308-311
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• 2015

V₂O₅/Mn₃O₄/Nb₂O₅ codoped zinc oxide varistor ceramics were sintered at a temperature range as low as 875~950℃. The voltage clamping characteristics of V₂O₅/Mn₃O₄/Nb₂O₅ codoped zinc oxide varistor ceramics were investigated at a pulse current range of 1~50 A. The sintering temperature had a significant effect on clamp voltage ratio, which exhibits surge protection capabilities. The varistor ceramics sintered at 875℃ exhibited the best clamping characteristics, in which the clamp voltage ratio was 2.69 at a pulse current of 50 A. The varistor ceramics sintered at 900℃ exhibited the highest electrical stability, where = 3,824 V/cm (initial 3,909 V/cm), and E_{1 mA/cm²} = 27 (initial 39) after application of a pulse current of 100 A.