• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1999년도 하계학술대회 논문집 E
• /
• pp.2161-2163
• /
• 1999

Generally, ZnO varistors have dynamic characteristics that the cut-off voltage increases as the time to crest of the varistor current decreases. Dynamic characteristics of ZnO varistor are the most important factor in region of the steep front discharge current particularly. Also, V-I characteristics of ZnO varistor have hysterisis loop in time domain and frequency dependency. This paper deals with ZnO varistor numerical equation and modeling method which takes the behavior of varying clamping voltage into consideration during the time to crest, in range of $1{\mu}m{\sim}50{\mu}m$, of impulse current applied to a ZnO varistor. The simulated results by the proposed model are compared with experimental results for each of the impulse current.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.34-34
• /
• 2006

Ferrite/Varistor 이종재료 동시소성에서 소성 시 두 재료간의 서로 다른 수축률에 의한 휠 거동을 ferrite 하소온도와 sheet 제조 시 binder 함량에 따라 제어하였다. Ferrite의 하소온도를 $750^{\circ}C{\sim}900^{\circ}C$로 변화시켰을 때 하소온도가 $900^{\circ}C$ 일 때 수축률이 varistor의 수축률과 악 1%미만의 차이로 가장 유사하였다. $900^{\circ}C$에서 하소한 ferrite의 slurry 제조 시 binder의 함량을 40wt%~50wt%로 변화시키면서 sheet를 제조하여 varistor와 적층하여 $900^{\circ}C{\sim}1000^{\circ}C$에서 소결하였다. Binder 함량이 40wt%에 ferrite와 varistor를 교대로 적층된 시편에서 동시소성 시 휨을 제거할 수 있었다.

• 한국결정성장학회지
• /
• 제17권2호
• /
• pp.63-68
• /
• 2007

EMI filter와 같은 적층형 세라믹 제조 시 공정 상 많은 문제점이 야기된다. 특히 표면과 계면에서의 crack, camber, delamination 같은 결함이 없는 적층체를 얻기 위해 서로 다른 두 재료의 동시 소성에 의한 수축율 조절이 필수적이다. 본 연구에서는 ferrite의 분체 특성을 통해 varistor/ferrite의 동시소성 거동을 연구하였다. ferrite 분말을 각각 24시간, 48시간, 72시간 분쇄하여 varistor와 ferrite 각각의 슬러리를 제조하고 doctor blade법으로 green sheet를 제조하였다. 슬러리는 분말 55wt(%)에 binder solution 45wt(%)로 혼합하여 제조하였다. Varistor와 ferrite green sheet는 $80 kg/cm^2$로 적층하여 $900^{\circ}C$, $1000^{\circ}C$에서 3시간 소결 하였다. 그 결과 분쇄시간과 소결온도 조절로 결함이 없는 동시 소성된 ferrite/varistor 적층체를 제조 할 수 있었다.

• 한국세라믹학회지
• /
• 제37권7호
• /
• pp.651-651
• /
• 2000

• Transactions on Electrical and Electronic Materials
• /
• 제15권5호
• /
• pp.284-289
• /
• 2014

The effects of additives (Nb, Bi and Cr) on the microstructure, varistor properties, and aging behavior of V/Mn/Co/ La/Dy co-doped zinc oxide ceramics were systematically investigated. An analysis of the microstructure showed that all of the ceramics that were modified with various additives were composed of zinc oxide grain as the main phase, and secondary phases such as $Zn_3(VO_4)_2$, $ZnV_2O_4$, and $DyVO_4$. The $Bi_2O_3$-modified samples exhibited the lowest density, the $Nb_2O_5$-modified sample exhibited the largest average grain size, and the $Cr_2O_3$-modified samples exhibited the highest breakdown field. All additives improved the non-ohmic coefficient (${\alpha}$) by either a small or a large margin, and in particular an $Nb_2O_5$ additive noticeably increased the non-ohmic coefficient to be as large as 36. The $Bi_2O_3$-modified samples exhibited the highest stability with variation rates for the breakdown field and for the non-ohmic coefficient (${\alpha}$) of -1.2% and -26.3%, respectively, after application of a DC accelerated aging stress of 0.85 EB/$85^{\circ}C$/24 h.

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2004년도 춘계총회 및 연구발표회 초록집
• /
• pp.36.1-36.1
• /
• 2004

• 한국전기전자재료학회논문지
• /
• 제23권11호
• /
• pp.875-879
• /
• 2010

In this study, we have characterized the roles of $Cr_2O_3$ on the sintering and electrical properties of ZnO. The densification and grain growth of Cr-doped ZnO (ZCr) system was mainly influenced by Cr contents. In the beginning of sintering, the densification of ZnO was retarded as reducing the Zni concentration in ZnO lattice with Cr doping. And the densification and grain growth of ZnO was more retarded due to a formation of spinel phase with increasing the Cr contents. ZCr system revealed varistor behavior with nonlinear coefficient $\alpha$ of 3~23 depending on the sintering temperature, implying double Schottky barrier formation on the grain boundary of ZnO. Especially the best varistor characteristics should be developed with 0.1~0.5 at% Cr contents and under $1100^{\circ}C$ in ZCr systems.

• 한국세라믹학회지
• /
• 제42권5호
• /
• pp.366-370
• /
• 2005

Single gram-boundary varistors were fabricated using hydrothermal and vapor phase grown ZnO single crystals and their voltage-current relation was studied. The single crystal bonded single junction varistor showed various voltage-current relationship and different breakdown voltage of 0.24-3V. The different types of non-linear current voltage behaviors was attributed to the variation of electrical conductivity in ZnO single crystals.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권10호
• /
• pp.1019-1026
• /
• 1996

In this study, we may be presented the carrier oscillation properties for the low-voltage varistor fabricated by a new method of three composition seed grain, in order to analyze the behavior of carriers at the its equivalent circuit model. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of nontrapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. In particularly, current oscillation phenomena is hardly shown in the high electric field. It is that the injected carriers from both electrodes are directly from the conduction band of forward biased ZnO grain through the intergranular layer into the reverse biased ZnO grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Transactions on Electrical and Electronic Materials
• /
• 제16권6호
• /
• pp.308-311
• /
• 2015

V₂O₅/Mn₃O₄/Nb₂O₅ codoped zinc oxide varistor ceramics were sintered at a temperature range as low as 875~950℃. The voltage clamping characteristics of V₂O₅/Mn₃O₄/Nb₂O₅ codoped zinc oxide varistor ceramics were investigated at a pulse current range of 1~50 A. The sintering temperature had a significant effect on clamp voltage ratio, which exhibits surge protection capabilities. The varistor ceramics sintered at 875℃ exhibited the best clamping characteristics, in which the clamp voltage ratio was 2.69 at a pulse current of 50 A. The varistor ceramics sintered at 900℃ exhibited the highest electrical stability, where = 3,824 V/cm (initial 3,909 V/cm), and E_{1 mA/cm²} = 27 (initial 39) after application of a pulse current of 100 A.