• Title/Summary/Keyword: Varactor

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Design and Fabrication of a X-band Voltage Control Dielectric Resonator Oscillator with The Low Phase Noise (낮은 위상잡음을 갖는 X-band 전압제어 유전체 공진형 발진기의 설계 및 제작)

  • 박창현;최병하
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.5
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    • pp.69-76
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    • 2004
  • In this paper, a VCDRO (Voltage Control Dielectric Resonator Oscillator) with low phase noise for X-band application has been designed and fabricated. A low noise and low flicker noise MESFET and a high Q dielectric resonator were selected to obtain good phase noise Performance. Also, a varactor diode having high Q, qualify factor was used to reduce the loading effects and a big Gamma of diode was chosen for linearity of frequency over voltage tuning range. The fabricated circuits was simulated with circuit design tools, ADS to provide the optimum performances. As the measured results of fabricated oscillator, the output power was 5.8 ㏈m at center frequency 12.05㎓ and harmonic suppression -30㏈c, phase noise -114 ㏈c at 100 KHz offset frequency, respectively, and the frequency tuning range as the function of valtage applied to varactor diode was 15.2 MHz and its power variation with frequency was 0.2 ㏈. This oscillator could be available to a local oscillator in X-band.

A 5-Gb/s Continuous-Time Adaptive Equalizer (5-Gb/s 연속시간 적응형 등화기 설계)

  • Kim, Tae-Ho;Kim, Sang-Ho;Kang, Jin-Ku
    • Journal of IKEEE
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    • v.14 no.1
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    • pp.33-39
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    • 2010
  • In this paper, a 5Gb/s receiver with an adaptive equalizer for serial link interfaces is proposed. For effective gain control, a least-mean-square (LMS) algorithm was implemented with two internal signals of slicers instead of output node of an equalizing filter. The scheme does not affect on a bandwidth of the equalizing filter. It also can be implemented without passive filter and it saves chip area and power consumption since two internal signals of slicers have a similar DC magnitude. The proposed adaptive equalizer can compensate up to 25dB and operate in various environments, which are 15m shield-twisted pair (STP) cable for DisplayPort and FR-4 traces for backplane. This work is implemented in $0.18-{\mu}m$ 1-poly 4-metal CMOS technology and occupies $200{\times}300{\mu}m^2$. Measurement results show only 6mW small power consumption and 2Gbps operating range with fabricated chip. The equalizer is expected to satisfy up to 5Gbps operating range if stable varactor(RF) is supported by foundry process.

Design of Reconfigurable Frequency Selective Surface Using Patch Array and Grid Structure (패치 배열과 그리드 구조를 이용한 재구성 주파수 선택 구조 설계)

  • Lee, In-Gon;Hong, Ic-Pyo;Seo, Yun-Seok;Chun, Heoung-Jae;Park, Yong-Bae;Cho, Chang-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.25 no.1
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    • pp.92-98
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    • 2014
  • In this paper, the reconfigurable frequency selective surface for C-band was designed using patch array and grid structure. Frequency reconfigurability was obtained by varying the capacitance from varactor diode. From the optimized design parameters, we fabricated the reconfigurable frequency selective surface using the FPCB(Flexible Printed Circuit Board) and commercial varactor diode and measured the frequency reconfigurability for different bias voltage. From the measurement results, proposed structure has the wideband operating frequency of 6.6~7.6 GHz. We can applied this proposed structure to the smooth curved surface like as radome of aircraft or warship.

A Design of 1.42 - 3.97GHz Digitally Controlled LC Oscillator (1.42 - 3.97GHz 디지털 제어 방식 LC 발진기의 설계)

  • Lee, Jong-Suk;Moon, Yong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.49 no.7
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    • pp.23-29
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    • 2012
  • The LC-based digitally controlled oscillator (LC-DCO), a key component of the all digital phase locked loop (ADPLL), is designed using $0.18{\mu}m$ RFCMOS process with 1.8 V supply. The NMOS core with double cross-coupled pair is chosen to realize wide tuning range, and the PMOS varactor pair that has small capacitance of a few aF and the capacitive degeneration technique to shrink the capacitive element are adopted to obtain the high frequency resolution. Also, the noise filtering technique is used to improve phase noise performance. Measurement results show the center frequency of 2.7 GHz, the tuning range of 2.5 GHz and the high frequency resolution of 2.9 kHz ~7.1 kHz. Also the fine tuning range and the current consumption of the core could be controlled by using the array of PMOS transistors using current biasing. The current consumption is between 17 mA and 26 mA at 1.8V supply voltage. The proposed DCO could be used widely in various communication system.

Voltage Controlled Injection-Locked Oscillator Design at 2.4 GHz Band for Wideband Applications (광대역 응용을 위한 2.4 GHz 대역 전압 제어 주입 동기 발진기 설계)

  • Yoon, Won-Sang;Lee, Hun-Sung;Lee, Hee-Jong;Pyo, Seong-Min;Kim, Young-Sik;Han, Sang-Min
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.3
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    • pp.292-298
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    • 2011
  • In this paper, a voltage controlled injection-locked oscillator(VC-ILO) is proposed for wideband applications. From the control of the free-running frequency by a varactor diode, the wide frequency locking range can be obtained for low-level injected signals. The proposed VC-ILO is implemented on an FR-4 substrate with a thickness of 0.8 mm. The free-running frequencies of the oscillator is 2.39~2.52 GHz at the control voltage of 0~5 V. While the frequency locking range of over 50 MHz is presented for -10 dBm injected signal level at a fixed frequency, the locking range of over 90 MHz can be achieved for -30 dBm by controlling the free-running frequency.

Development of the VCXO with the PECL

  • Hong, Seung-Jin;Lee, Jae-Kyung;Yoon, Dal-Hwan;Min, Seung-Gi
    • 제어로봇시스템학회:학술대회논문집
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    • 2003.10a
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    • pp.1885-1890
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    • 2003
  • In this paper, we have developed the voltage controlled crystal oscillator (VCXO) with positive emitter coupled logic(PECL). The VCXO is a crystal oscillator which includes a varactor diode and associated circuitry allowing the frequency to be changed by application of a voltage across that diode. The characteristics of the PECL has the delay time less than 2 ns and the faster logic gate, and the high level output greater than 2.3 V and the low level output smaller than 1.68 V.

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A 1.8 GHz SiGe HBT VCO using 0.5μm BiCMOS Process

  • Lee, Ja-Yol;Lee, Sang-Heung;Kang, Jin-Young;Shim, Kyu-Hwan;Cho, Kyoung-Ik;Oh, Seung-Hyeub
    • Journal of electromagnetic engineering and science
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    • v.3 no.1
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    • pp.29-34
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    • 2003
  • In this paper, we fabricated an 1.8 ㎓ differential VCO using a commercial 0.5 ${\mu}{\textrm}{m}$ SiGe BiCMOS process technology, The fabricated VCO consumes 16 ㎃ at 3 V supply voltage and has a 1.2 $\times$ 1.6 $mm^2$TEX>chip area. A phase noise measured at 100 KHz offset carrier is -110 ㏈c/Hz and a tuning range is 1795 MHz~1910 MHz when two varactor diodes are biased from 0 V to 3 V.

Design of the Broad Band Phase Shifter for DTV Receiver (DTV(Digital TV) 수신 모듈용 광대역 가변 위상기의 설계)

  • 한기진;김종필;나형기
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.3
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    • pp.296-303
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    • 2003
  • In this paper, a design method is proposed for the reflection type phase shifter applied to the DTV(Digital TV) receiver, and a phase shifter is designed by using the design equations to satisfy the phase shifting range over 180 degrees for frequency range from 470 MHz to 860 MHz, the receiving band of DTV. From the proposed method, it is possible that the systematic design of the reflection type phase shifter with desired phase shifting range and insertion loss. In addition, it is found that the realized phase shifter satisfies the given specifications.

SIP based Tunable BPF for UHF TV Tuner Applications (UHF대역 TV 튜너에 적용을 위한 가변형 대역통과필터)

  • Lee, Tae-C.;Park, Jae-Y.
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.11
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    • pp.2127-2130
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    • 2008
  • In this paper, a tunable bandpass filter with mutual inductive coupling circuits is newly designed and demonstrated for UHF TV tuner ranged from Ch.14(473MHz) to Ch.69(803MHz) applications. Conventional HF tuning circuit with an electromagnetic bandpass filter has several problems such as large size, high volume and high cost, since the electromagnetic filter is comprised of several passive components and air core inductors to be assembled and controlled manually. To address these obstacles, peaking chip inductor was newly applied for constructing the mutual inductive coupling circuit. The proposed circuit was newly and optimally designed, since the chip inductor showed lower components Q-value than the air core inductor. A varactor diode has been also used to fabricate the proposed tunable bandpass filter for RF tuning circuit. The fabricated tunable filter exhibited low insertion loss of approximately -3dB, high return loss of below -10dB, and large tuning bandwidth of 330MHz.

Fabrication of the Capacitance Controlled Active Integrated Phased Array Antenna and It's Scanning Characteristics (용량 조정형 능동 집적 배열 안테나의 제작과 방사 방향 주사 특성)

  • Choi, Young-Kyu;Nam, Beong-Geun;Shin, Sang-Yeol
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.10
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    • pp.1807-1813
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    • 2007
  • This paper deals with extending the variable natural oscillation frequency range of an active integrated FET oscillator. In this paper, we conform experimentally that the variable range of the natural oscillation frequency is expanded about three times in the oscillator controlled by the varactor diode. When the frequency difference is given to the oscillators in the two element antenna system, phase difference appeared between the oscillators. The 2-, 3-, 4-, 5-element patch antenna arrays are composed for the beam scanning experiments. All the above patch antennas show good phased array characteristics. The range of the scanning angle is about $30^{\circ}$, and the radiation power is gradually increased from $50{\mu}W\;to\;200{\mu}W$. The radiation patterns we sharpened as the number of elements is increased.