• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.125-132
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• 2010

For typical governing dimensionless parameters of Ar = 5, Pr = 1.16, Le = 0.14, Pe = 3.57, Cv = 1.02, $Gr_s=2.65{\times}10^6$, the effects of thermo physical properties such as a molecular weight, a binary diffusivity coefficient, a partial pressure of component B on solutally buoyancy-driven convection (solutal Grashof number $Gr_s=2.65{\times}10^6$) are theoretically investigated for further understanding and insight into an essence of solutal convection occurring in the vapor phase during the physical vapor transport of a $Hg_2Cl_2-N_2$ system. The solutally buoyancy-driven convection is significantly affected by any significant disparity in the molecular weight of the crystal components and the impurity gas of nitrogen. The solutal convection in a vertical orientation is found to be more suppressed than a tenth reduction of gravitational accelerations in a horizontal orientation. For crystal growth parameters under consideration, the greater uniformity in the growth rate is obtained for either solutal convection mode in a vertical orientation or thermal convection mode in horizontal geometry. The growth rate is also found to be first order exponentially decayed for $10{\leq}P_B{\leq}200$ Torr.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.560-566
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• 1997

Dislocation behavior in the ZnSe crystal grown by seeded vapor transport was investigated. Etch pit shape with the ZnSe plane and dislocation arrangement were shown. Also the variation of the dislocation density in the crystal was disclosed. The dislocation density along the lateral growth direction was not changed but the dislocation density along the vertical growth direction was reduced as the crystal grew. The average dislocation density of the grown crystal was $4{\times}10^4 /\textrm{cm}^2$.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.5
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• pp.239-244
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• 2021

Following Silicon Carbide, single crystal diamond continues to attract attention as a next-generation semiconductor substrate material. In addition to excellent physical properties, large area and productivity are very important for semiconductor substrate materials. Research on the increase in area and productivity of single crystal diamonds has been carried out using various devices such as HPHT (High Pressure High Temperature) and MPECVD (Microwave Plasma Enhanced Chemical Vapor Deposition). We hit the limits of growth rate and internal defects. However, HFCVD (Hot Filament Chemical Vapor Deposition) can be replaced due to the previous problem. In this study, HFCVD confirmed the distance between the substrate and the filament, the accompanying growth rate, the surface shape, and the Raman shift of the substrate after vapor deposition according to the vapor deposition temperature change. As a result, it was confirmed that the difference in the growth rate of the single crystal substrate due to the change in the vapor deposition temperature was gained up to 5 times, and that as the vapor deposition temperature increased, a large amount of polycrystalline diamond tended to be generated on the surface.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.3
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• pp.116-124
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• 2009

Our computational studies for the physical vapor transport crystal growth of $Hg_2Cl_2-Cl_2$ system evidence suggests that the PVT growth process exhibits the diffusion-dominated behaviors for aspect ratios more than and equal to 10, which would provide purely diffusive transport conditions adequate to microgravity environments less than $10^{-3}g_0$. Also, the regimes of high temperature difference based on the fixed source temperature of $380^{\circ}C$, where ${\Delta}T$ is relatively large enough for the crystal growth of mercurous chloride, the transport rates do not keep increasing with ${\Delta}T$ but tend to some constant value of $2.12\;mole\;cm^{-2}s^{-1}$. For the aspect ratios of 5, 10, and 20, the transport rate is directly proportional to the total pressure of the system under consideration. For Ar = 5, the rate is increased by a factor of 2.3 with increasing the total pressure from 403 Torr to 935 Torr, i.e., by a factor of 2.3. For both Ar = 10 and 20, the rate is increased by a factor of 1.25 with increasing the total pressure from 403 Torr to 935 Torr.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.2
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• pp.54-58
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• 2014

AlN (Aluminum Nitride) crystals were grown by a PVT (Physical Vapor Transport) method and were characterized to phases on the growth temperature. The crystals phase and morphology were analyzed using an optical stereo-microscope and the optimum temperature for the growing was determined. In this report, the characteristics of the AlN crystals grown at various temperatures were reported.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.107-114
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• 2019

A computational analysis has been carried out to get a thorough and full understanding on the effects of convective process parameters on double-diffusive convection during the growth of mercurous bromide ($Hg_2Br_2$) crystals on earth and under ${\mu}g$ conditions. The dimensional maximum magnitude of velocity vector, ${\mid}U{\mid}_{max}$ decreases much drasticlly near Ar = 1, and, then since Ar = 2, decreases. The ${\mu}g$ conditions less than $10^{-2}g$ make the effect of double-diffusion convection much reduced so that adequate advective-diffusion mass transfer could be obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.2
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• pp.63-68
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• 2018

Natural convection of a two dimensional laminar steady-state incompressible fluid flow in a rectangular enclosure has been investigated numerically for low aspect ratios with the physical vapor transport crystal growth. Results show that for aspect ratio (Ar = L/H) range of $0.1{\leq}Ar{\leq}1.5$, with the increase in Grashof number by one order of magnitude, the total mass flux is much augmented, and is exponentially decayed with the aspect ratio. Velocity and temperature profiles are presented at the mid-width of the rectangular enclosure. It is found that the effect of Grashof number on mass transfer is less significant when the enclosure is shallow (Ar = 0.1) and the influence of aspect ratio is stranger when the enclosure is tall and the Grashof number is high. Therefore, the convective phenomena are greatly affected by the variation of aspect ratios.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.309-317
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• 1996

Al2O3 thin films were deposited on Si-wafer (100) using organo-aluminum compounds at low pressure by chemical vapor deposition (CVD) method. The vapor of the organo-metallic precursor was carried by pure N2 gas. The deposition rate increased and then saturated as Tsub increased with increasing the AIP flow rate. The main contamination didn't found in deposited films except carbon. The H-O(H2O) IR absorption band decreased in intensity as the deposition temperature increased, and completely disappeared through annealing.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.1
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• pp.16-24
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• 2022

A computational study of combined thermal and solutal convection (double diffusive convection) in a sealed crystal growth reactor is presented, based on a two-dimensional numerical analysis of the nonlinear and strongly coupled partial differential equations and their associated boundary conditions. The average Nusselt numbers for the source regions are greater than those at the crystal regions for 9.73 × 10³ ≤ Gr_t ≤ 6.22 × 10⁵. The average Nusselt numbers for the source regions varies linearly and increases directly with the thermal Grashof number form 9.73 × 10³ ≤ Gr_t ≤ 6.22 × 10⁵ for aspect ratio, Ar (transport length-to-width) = 1 and 2. Additionally, the average Nusselt numbers for the crystal regions at Ar = 1 are much greater than those at Ar = 2. Also, the occurrence of one unicellular flow structure is caused by both the thermal and solutal convection, which is inherent during the physical vapor transport of Hg₂Br₂. When the aspect ratio of the enclosure increases, the fluid movement is hindered and results in the decrease of thermal buoyancy force.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.4
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• pp.160-168
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• 2004

We investigate the effects of solutal convection on the crystal growth rate in a horizontal configuration for diffusive-convection conditions and purely diffusion conditions achievable in a low gravity environment for a nonlinear thermal gradient. It is concluded that the solutally-driven convection due to the disparity in the molecular weights of the component A $(Hg_2Br_2)$ and B (CO) is stronger than thermally-driven convection for both the nonlinear and the linear thermal profiles, corresponding to $Gr_t= 8.5{\times}10^3,\; Gr_s = 1.05{\times}10^5$. For both solutal and thermal convection processes, the growth rates for the linear thermal profile (conducting walls) are greater than for the nonlinear case. With the temperature humps, there are found to be observed in undersaturation for diffusive-convection processes ranging from $D_{AB}$ = 0.087 to 0.87. For the vertical configurations, the diffusion mode is so much dominated that the growth rate and interfacial distribution is nearly regardless of the gravitational accelerations. Also, the diffusion mode is predominant over the convection for the gravity levels less than 0.1 $g_0$ for the horizontally oriented configuration.